PHILIPS NE5205A Wide-band high-frequency amplifier Datasheet

INTEGRATED CIRCUITS
NE/SA/SE5205A
Wide-band high-frequency amplifier
Product specification
RF Communications Handbook
Philips Semiconductors
1992 Feb 24
Philips Semiconductors
Product specification
Wide-band high-frequency amplifier
NE/SA/SE5205A
DESCRIPTION
PIN CONFIGURATIONS
The NE/SA/SE5205A family of wideband amplifiers replace the
NE/SA/SE5205 family. The ‘A’ parts are fabricated on a rugged 2µm
bipolar process featuring excellent statistical process control.
Electrical performance is nominally identical to the original parts.
N, D Packages
The NE/SA/SE5205A is a high-frequency amplifier with a fixed
insertion gain of 20dB. The gain is flat to ±0.5dB from DC to
450MHz, and the -3dB bandwidth is greater than 600MHz in the EC
package. This performance makes the amplifier ideal for cable TV
applications. For lower frequency applications, the part is also
available in industrial standard dual in-line and small outline
packages. The NE/SA/SE5205A operates with a single supply of 6V,
and only draws 24mA of supply current, which is much less than
comparable hybrid parts. The noise figure is 4.8dB in a 75Ω system
and 6dB in a 50Ω system.
VCC
1
8
VCC
20dB
VIN
2
7
VOUT
GND
3
6
GND
GND
4
5
GND
TOP VIEW
SR00215
Figure 1. Pin Configuration
FEATURES
• 600MHz bandwidth
• 20dB insertion gain
• 4.8dB (6dB) noise figure ZO=75Ω (ZO=50Ω)
• No external components required
• Input and output impedances matched to 50/75Ω systems
• Surface mount package available
• MIL-STD processing available
• 2000V ESD protection
Until now, most RF or high-frequency designers had to settle for
discrete or hybrid solutions to their amplification problems. Most of
these solutions required trade-offs that the designer had to accept in
order to use high-frequency gain stages. These include high-power
consumption, large component count, transformers, large packages
with heat sinks, and high part cost. The NE/SA/SE5205A solves
these problems by incorporating a wide-band amplifier on a single
monolithic chip.
The part is well matched to 50 or 75Ω input and output impedances.
The Standing Wave Ratios in 50 and 75Ω systems do not exceed
1.5 on either the input or output from DC to the -3dB bandwidth limit.
Since the part is a small monolithic IC die, problems such as stray
capacitance are minimized. The die size is small enough to fit into a
very cost-effective 8-pin small-outline (SO) package to further
reduce parasitic effects.
APPLICATIONS
• 75Ω cable TV decoder boxes
• Antenna amplifiers
• Amplified splitters
• Signal generators
• Frequency counters
• Oscilloscopes
• Signal analyzers
• Broad-band LANs
• Fiber-optics
• Modems
• Mobile radio
• Security systems
• Telecommunications
No external components are needed other than AC coupling
capacitors because the NE/SA/SE5205A is internally compensated
and matched to 50 and 75Ω. The amplifier has very good distortion
specifications, with second and third-order intermodulation
intercepts of +24dBm and +17dBm respectively at 100MHz.
The device is ideally suited for 75Ω cable television applications
such as decoder boxes, satellite receiver/decoders, and front-end
amplifiers for TV receivers. It is also useful for amplified splitters and
antenna amplifiers.
The part is matched well for 50Ω test equipment such as signal
generators, oscilloscopes, frequency counters and all kinds of signal
analyzers. Other applications at 50Ω include mobile radio, CB radio
and data/video transmission in fiber optics, as well as broad-band
LANs and telecom systems. A gain greater than 20dB can be
achieved by cascading additional NE/SA/SE5205As in series as
required, without any degradation in amplifier stability.
ORDERING INFORMATION
TEMPERATURE RANGE
ORDER CODE
DWG #
8-Pin Plastic Small Outline (SO) package
DESCRIPTION
0 to +70°C
NE5205AD
SOT96-1
8-Pin Plastic Dual In-Line Package (DIP)
0 to +70°C
NE5205AN
SOT97-1
8-Pin Plastic Small Outline (SO) package
-40 to +85°C
SA5205AD
SOT96-1
8-Pin Plastic Dual In-Line Package (DIP)
-40 to +85°C
SA5205AN
SOT97-1
8-Pin Plastic Dual In-Line Package (DIP)
-55 to +125°C
SE5205AN
SOT97-1
1992 Feb 24
2
853-1598 05759
Philips Semiconductors
Product specification
Wide-band high-frequency amplifier
NE/SA/SE5205A
EQUIVALENT SCHEMATIC
VCC
R1
R2
Q3
VOUT
Q6
Q2
R3
VIN
Q1
Q4
RE2
RF1
RE1
Q5
RF2
SR00216
Figure 2. Equivalent Schematic
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
UNIT
VCC
Supply voltage
9
V
VAC
AC input voltage
5
VP-P
TA
Operating ambient temperature range
NE grade
0 to +70
°C
SA grade
-40 to +85
°C
SE grade
-55 to +125
°C
1160
780
mW
mW
PDMAX
Maximum power dissipation,
TA=25°C (still-air)1, 2
N package
D package
NOTES:
1. Derate above 25°C, at the following rates:
N package at 9.3mW/°C
D package at 6.2mW/°C
2. See “Power Dissipation Considerations” section.
1992 Feb 24
3
Philips Semiconductors
Product specification
Wide-band high-frequency amplifier
NE/SA/SE5205A
DC ELECTRICAL CHARACTERISTICS
VCC=6V, ZS=ZL=ZO=50Ω and TA=25°C in all packages, unless otherwise specified.
SYMBOL
PARAMETER
VCC
Operating supply voltage range
ICC
Supply current
S21
Insertion gain
S11
Input return loss
S22
Output return loss
S12
Isolation
TEST CONDITIONS
SE5205A
Min
Typ
NE/SA5205A
Max
Min
6.5
6.5
5
5
Over temperature
5
5
Over temperature
20
19
25
25
32
33
20
19
f=100MHz
Over temperature
17
16.5
19
21
21.5
17
16.5
f=100MHz D, N
DC - fMAX D, N
25
12
f=100MHz D, N
DC - fMAX
DC - fMAX
25
25
32
33
mA
mA
19
21
21.5
dB
27
12
-25
-18
UNIT
V
V
25
27
Max
8
8
12
12
f=100MHz
Typ
-25
-18
dB
dB
dB
tR
Rise time
tP
Propagation delay
BW
Bandwidth
±0.5dB D, N
fMAX
Bandwidth
-3dB D, N
Noise figure (75Ω)
f=100MHz
4.8
4.8
dB
Noise figure (50Ω)
f=100MHz
6.0
6.0
dB
Saturated output power
f=100MHz
+7.0
+7.0
dBm
1dB gain compression
f=100MHz
+4.0
+4.0
dBm
Third-order intermodulation
intercept (output)
f=100MHz
+17
+17
dBm
Second-order intermodulation
intercept (output)
f=100MHz
+24
+24
dBm
1992 Feb 24
4
500
500
500
500
ps
300
450
MHz
550
ps
MHz
Philips Semiconductors
Product specification
NE/SA/SE5205A
11
10
9
8
7
6
5
4
3
2
1
0
–1
–2
–3
–4
–5
–6
35
34
32
30
OUTPUT LEVEL—dBm
SUPPLY CURRENT—mA
Wide-band high-frequency amplifier
TA = 25oC
28
26
24
22
20
18
16
5
5.5
6
6.5
7
7.5
8
VCC = 7V
VCC = 6V
ZO = 50Ω
TA = 25oC
101
SUPPLY VOLTAGE—V
2
4
SR00217
OUTPUT LEVEL—dBm
NOISE FIGURE—dBm
ZO = 50Ω
TA = 25oC
vcc = 7v
vcc = 6v
7
vcc = 5v
6
5
101
2
4
6 8 102
2
FREQUENCY—MHz
4
6
6
8 103
SR00218
VCC = 7V
VCC = 5V
ZO = 50Ω
TA = 25oC
2
4
6 8 102
2
FREQUENCY—MHz
4
6
8 103
SR00220
Figure 8. 1dB Gain Compression vs Frequency
SECOND–ORDER INTERCEPT—dBM
vcc = 8v
INSERTION GAIN—dB
4
VCC = 6V
101
vcc = 7v
20
vcc = 6v
vcc = 5v
ZO = 50Ω
TA = 25oC
10
40
35
30
25
ZO = 50Ω
TA = 25oC
20
15
10
101
2
4
6
8 102
2
4
6
8 103
FREQUENCY—MHz
4
6
7
8
POWER SUPPLY VOLTAGE—V
9
10
SR00222
Figure 9. Second-Order Output Intercept vs Supply Voltage
30
THIRD–ORDER INTERCEPT—dBm
25
TA = 55oC
TA = 25oC
20
TA = 85oC
TA = 125oC
15
VCC = 8V
ZO = 50Ω
10
5
SR00221
Figure 5. Insertion Gain vs Frequency (S21)
INSERTION GAIN—dB
2
VCC = 8V
SR00219
Figure 4. Noise Figure vs Frequency
101
2
4
6
8 102
2
FREQUENCY—MHz
4
6
25
20
SR00223
ZO = 50Ω
TA = 25oC
15
10
5
8 103
Figure 6. Insertion Gain vs Frequency (S21)
1992 Feb 24
10
9
8
7
6
5
4
3
2
1
0
–1
–2
–3
–4
–5
–6
8 103
25
15
8 102
Figure 7. Saturated Output Power vs Frequency
9
vcc = 8v
6
FREQUENCY—MHz
Figure 3. Supply Current vs Supply Voltage
8
VCC = 8V
VCC = 5V
4
5
6
7
8
9
POWER SUPPLY VOLTAGE—V
10
SR00224
Figure 10. Third-Order Intercept vs Supply Voltage
5
Philips Semiconductors
Product specification
Wide-band high-frequency amplifier
NE/SA/SE5205A
2.0
10
1.9
TA = 25oC
VCC = 6V
INPUT VSWR
1.7
–15
ISOLATION—dB
1.8
.
1.6
1.5
1.4
ZO = 75Ω
1.3
VCC = 6V
ZO = 50Ω
TA = 25oC
–20
–25
1.2
ZO = 50Ω
1.1
1.0
101
–30
2
4
6
8 102
2
4
6
8 103
101
2
4
6
8 102
2
4
6
8 103
FREQUENCY—MHz
FREQUENCY—MHz
SR00225
SR00226
Figure 11. Input VSWR vs Frequency
Figure 14. Isolation vs Frequency (S12)
2.0
25
1.9
INPUT VSWR
1.7
vcc = 8v
Tamb = 25oC
VCC = 6V
ISOLATION GAIN—dB
1.8
1.6
1.5
1.4
1.3
ZO = 75Ω
1.2
1.1
1.0
101
vcc = 6v
vcc = 5v
15
ZO = 75Ω
TA = 25oC
10
2
4
6
8 102
2
4
6
8 103
101
2
4
6 8 102
2
FREQUENCY—MHz
6
8 103
SR00228
Figure 15. Insertion Gain vs Frequency (S21)
40
25
TA = –55oC
TA = 25oC
INSERTION GAIN—dB
35
30
OUTPUT
25
VCC = 6V
ZO = 50Ω
TA = 25oC
20
INPUT
20
TA = 85oC
TA = 125oC
15
ZO = 75Ω
VCC = 6V
15
10
4
SR00227
Figure 12. Output VSWR vs Frequency
INPUT RETURN LOSS—dB
20
ZO = 50Ω
FREQUENCY—MHz
OUTPUT RETURN LOSS—dB
vcc = 7v
101
2
4
6
8 102
2
4
10
6 8 103
FREQUENCY—MHz
101
2
4
6
8 102
2
4
6
8 103
FREQUENCY—MHz
SR00229
SR00230
Figure 13. Input (S11) and Output (S22) Return Loss vs
Frequency
1992 Feb 24
Figure 16. Insertion Gain vs Frequency (S21)
6
Philips Semiconductors
Product specification
Wide-band high-frequency amplifier
NE/SA/SE5205A
where RE1=12Ω, VBE=0.8V, IC1=5mA and IC3=7mA (currents rated
at VCC=6V).
THEORY OF OPERATION
The design is based on the use of multiple feedback loops to
provide wide-band gain together with good noise figure and terminal
impedance matches. Referring to the circuit schematic in Figure 17,
the gain is set primarily by the equation:
V OUT
V IN
RF1
R E1
Under the above conditions, VIN is approximately equal to 1V.
Level shifting is achieved by emitter-follower Q3 and diode Q4 which
provide shunt feedback to the emitter of Q1 via RF1. The use of an
emitter-follower buffer in this feedback loop essentially eliminates
problems of shunt feedback loading on the output. The value of
RF1=140Ω is chosen to give the desired nominal gain. The DC
output voltage VOUT can be determined by:
(1)
R E1
which is series-shunt feedback. There is also shunt-series feedback
due to RF2 and RE2 which aids in producing wideband terminal
impedances without the need for low value input shunting resistors
that would degrade the noise figure. For optimum noise
performance, RE1 and the base resistance of Q1 are kept as low as
possible while RF2 is maximized.
VOUT=VCC-(IC2+IC6)R2,(4)
where VCC=6V, R2=225Ω, IC2=8mA and IC6=5mA.
The noise figure is given by the following equation:
From here it can be seen that the output voltage is approximately
3.1V to give relatively equal positive and negative output swings.
Diode Q5 is included for bias purposes to allow direct coupling of
RF2 to the base of Q1. The dual feedback loops stabilize the DC
operating point of the amplifier.
NF =
10 log 1 r b R E1 RO
KT
2qlC1
dB
(2)
The output stage is a Darlington pair (Q6 and Q2) which increases
the DC bias voltage on the input stage (Q1) to a more desirable
value, and also increases the feedback loop gain. Resistor R0
optimizes the output VSWR (Voltage Standing Wave Ratio).
Inductors L1 and L2 are bondwire and lead inductances which are
roughly 3nH. These improve the high-frequency impedance
matches at input and output by partially resonating with 0.5pF of pad
and package capacitance.
where IC1=5.5mA, RE1=12Ω, rb=130Ω, KT/q=26mV at 25°C and
R0=50 for a 50Ω system and 75 for a 75Ω system.
The DC input voltage level VIN can be determined by the equation:
VIN=VBE1+(IC1+IC3) RE1
VCC
R2
225
R1
650
R0
L2
10
3nH
Q3
VOUT
Q6
VIN
Q2
L2
Q4
Q1
R3
140
3nH
RF1
140
RE2
12
RE1
12
Q5
RF2
200
SR00231
Figure 17. Schematic Diagram
1992 Feb 24
7
Philips Semiconductors
Product specification
Wide-band high-frequency amplifier
NE/SA/SE5205A
output pins of the device. This circuit is shown in Figure 18. Follow
these recommendations to get the best frequency response and
noise immunity. The board design is as important as the integrated
circuit design itself.
POWER DISSIPATION CONSIDERATIONS
When using the part at elevated temperature, the engineer should consider the power dissipation capabilities of each package.
At the nominal supply voltage of 6V, the typical supply current is
25mA (32mA Max). For operation at supply voltages other than 6V,
see Figure 3 for ICC versus VCC curves. The supply current is
inversely proportional to temperature and varies no more than 1mA
between 25°C and either temperature extreme. The change is 0.1%
per over the range.
SCATTERING PARAMETERS
The primary specifications for the NE/SA/SE5205A are listed as
S-parameters. S-parameters are measurements of incident and
reflected currents and voltages between the source, amplifier and
load as well as transmission losses. The parameters for a two-port
network are defined in Figure 19.
The recommended operating temperature ranges are air-mount
specifications. Better heat sinking benefits can be realized by
mounting the D package body against the PC board plane.
Actual S-parameter measurements using an HP network analyzer
(model 8505A) and an HP S-parameter tester (models 8503A/B) are
shown in Figure 20.
PC BOARD MOUNTING
Values for the figures below are measured and specified in the data
sheet to ease adaptation and comparison of the NE/SA/SE5205A to
other high-frequency amplifiers.
In order to realize satisfactory mounting of the NE5205A to a PC
board, certain techniques need to be utilized. The board must be
double-sided with copper and all pins must be soldered to their
respective areas (i.e., all GND and VCC pins on the SO package).
The power supply should be decoupled with a capacitor as close to
the VCC pins as possible and an RF choke should be inserted
between the supply and the device. Caution should be exercised in
the connection of input and output pins. Standard microstrip should
be observed wherever possible. There should be no solder bumps
or burrs or any obstructions in the signal path to cause launching
problems. The path should be as straight as possible and lead
lengths as short as possible from the part to the cable connection.
Another important consideration is that the input and output should
be AC coupled. This is because at VCC=6V, the input is
approximately at 1V while the output is at 3.1V. The output must be
decoupled into a low impedance system or the DC bias on the
output of the amplifier will be loaded down causing loss of output
power. The easiest way to decouple the entire amplifier is by
soldering a high frequency chip capacitor directly to the input and
VCC
RF CHOKE
DECOUPLING
CAPACITOR
NE5205A
VIN
AC
COUPLING
CAPACITOR
VOUT
AC
COUPLING
CAPACITOR
SR00232
Figure 18. Circuit Schematic for Coupling and Power Supply
Decoupling
POWER REFLECTED
FROM INPUT PORT
S11 — INPUT RETURN LOSS
S11 =
S12 — REVERSE TRANSMISSION LOSS
OSOLATION
S12 =
REVERSE TRANSDUCER
POWER GAIN
S21 — FORWARD TRANSMISSION LOSS
OR INSERTION GAIN
S21 =
TRANSDUCER POWER GAIN
S22 — OUTPUT RETURN LOSS
S22 =
S21
S11
POWER AVAILABLE FROM
GENERATOR AT INPUT PORT
S22
S12
a. Two-Port Network Defined
b.
Figure 19.
1992 Feb 24
8
POWER REFLECTED
FROM OUTPUT PORT
POWER AVAILABLE FROM
GENERATOR AT OUTPUT PORT
SR00233
Philips Semiconductors
Product specification
Wide-band high-frequency amplifier
NE/SA/SE5205A
50Ω System
75Ω System
25
25
vcc = 8v
ISOLATION GAIN—dB
INSERTION GAIN—dB
vcc = 8v
vcc = 7v
20
vcc = 6v
15
vcc = 5v
vcc = 7v
20
vcc = 6v
vcc = 5v
15
ZO = 75Ω
TA = 25oC
ZO = 50Ω
TA = 25oC
10
101
10
101
2
4
6
8 102
2
4
6
8 103
2
4
8 102
2
4
6
8 103
b. Insertion Gain vs Frequency (S21)
10
10
–15
–15
ISOLATION—dB
ISOLATION—dB
a. Insertion Gain vs Frequency (S21)
VCC = 6V
ZO = 50Ω
TA = 25oC
–20
6
FREQUENCY—MHz
FREQUENCY—MHz
ZO = 75Ω
TA = 25oC
VCC = 6V
–20
–25
–25
–30
–30
101
2
4
6 8 102
2
4
6
101
8 103
2
4
FREQUENCY—MHz
c. Isolation vs Frequency (S12)
INPUT RETURN LOSS—dB
OUTPUT RETURN LOSS—dB
INPUT RETURN LOSS—dB
OUTPUT RETURN LOSS—dB
4
6 8 103
40
35
30
OUTPUT
25
VCC = 6V
ZO = 50Ω
TA = 25oC
20
INPUT
15
35
30
2
4
6
8 102
2
4
6 8 103
OUTPUT
25
20
INPUT
VCC = 6V
ZO = 75Ω
TA = 25oC
15
10
101
FREQUENCY—MHz
101
2
4
6
8 102
2
4
6 8 103
FREQUENCY—MHz
e. Input (S11) and Output (S22) Return Loss
vs Frequency
f. Input (S11) and Output (S22) Return Loss
vs Frequency
Figure 20.
1992 Feb 24
2
d. S12 Isolation vs Frequency
40
10
6 8 102
FREQUENCY—MHz
9
SR00234
Philips Semiconductors
Product specification
Wide-band high-frequency amplifier
NE/SA/SE5205A
The most important parameter is S21. It is defined as the square root
of the power gain, and, in decibels, is equal to voltage gain as
shown below:
1dB from its low power value. The decrease is due to nonlinearities
in the amplifier, an indication of the point of transition between
small-signal operation and the large signal mode.
ZD=ZIN=ZOUT for the NE/SA/SE5205A
The saturated output power is a measure of the amplifier’s ability to
deliver power into an external load. It is the value of the amplifier’s
output power when the input is heavily overdriven. This includes the
sum of the power in all harmonics.
NE/SA/
SE5205A
2
P IN V IN
ZD
P OUT
P IN
P OUT V OUT
ZD
V OUT
ZD
2
ZD
2
2
V IN
ZD
V OUT
V IN
INTERMODULATION INTERCEPT TESTS
2
2
PI
The intermodulation intercept is an expression of the low level
linearity of the amplifier. The intermodulation ratio is the difference in
dB between the fundamental output signal level and the generated
distortion product level. The relationship between intercept and
intermodulation ratio is illustrated in Figure 22, which shows product
output levels plotted versus the level of the fundamental output for
two equal strength output signals at different frequencies. The upper
line shows the fundamental output plotted against itself with a 1dB to
1dB slope. The second and third order products lie below the
fundamentals and exhibit a 2:1 and 3:1 slope, respectively.
PI=VI 2
PI=Insertion Power Gain
VI=Insertion Voltage Gain
Measured value for the
NE/SA/SE5205A = |S21 | 2 = 100
P I The intercept point for either product is the intersection of the
extensions of the product curve with the fundamental output.
P OUT
| S 21 | 2 100
P IN
V OUT
P I S 21 10
and V I V IN
The intercept point is determined by measuring the intermodulation
ratio at a single output level and projecting along the appropriate
product slope to the point of intersection with the fundamental.
When the intercept point is known, the intermodulation ratio can be
determined by the reverse process. The second order IMR is equal
to the difference between the second order intercept and the
fundamental output level. The third order IMR is equal to twice the
difference between the third order intercept and the fundamental
output level. These are expressed as:
In decibels:
PI(dB) =10 Log | S21 | 2 = 20dB
VI(dB) = 20 Log S21 = 20dB
∴ PI(dB) = VI(dB) = S21(dB) = 20dB
IP2=POUT+IMR2
Also measured on the same system are the respective voltage
standing wave ratios. These are shown in Figure 21. The VSWR
can be seen to be below 1.5 across the entire operational frequency
range.
IP3=POUT+IMR3/2
where POUT is the power level in dBm of each of a pair of equal
level fundamental output signals, IP2 and IP3 are the second and
third order output intercepts in dBm, and IMR2 and IMR3 are the
second and third order intermodulation ratios in dB. The
intermodulation intercept is an indicator of intermodulation
performance only in the small signal operating range of the amplifier.
Above some output level which is below the 1dB compression point,
the active device moves into large-signal operation. At this point the
intermodulation products no longer follow the straight line output
slopes, and the intercept description is no longer valid. It is therefore
important to measure IP2 and IP3 at output levels well below 1dB
compression. One must be careful, however, not to select too low
levels because the test equipment may not be able to recover the
signal from the noise. For the NE/SA/SE5205A we have chosen an
output level of -10.5dBm with fundamental frequencies of 100.000
and 100.01MHz, respectively.
Relationships exist between the input and output return losses and
the voltage standing wave ratios. These relationships are as follows:
INPUT RETURN LOSS=S11dB
S11dB=20 Log | S11 |
OUTPUT RETURN LOSS=S22dB
S22dB=20 Log | S22 |
INPUT VSWR=≤1.5
OUTPUT VSWR=≤1.5
1dB GAIN COMPRESSION AND SATURATED
OUTPUT POWER
The 1dB gain compression is a measurement of the output power
level where the small-signal insertion gain magnitude decreases
1992 Feb 24
10
Philips Semiconductors
Product specification
Wide-band high-frequency amplifier
NE/SA/SE5205A
2.0
2.0
1.9
INPUT VSWR
1.7
1.9
TA = 25oC
VCC = 6V
1.8
OUTPUT VSWR
1.8
.
1.6
1.5
1.4
1.3
ZO = 75Ω
1.2
1.1
1.0
101
Tamb = 25oC
VCC = 6V
1.7
1.6
1.5
1.4
1.3
ZO = 75Ω
1.2
ZO = 50Ω
2
ZO = 50Ω
1.1
4
6 8 102
2
FREQUENCY—MHz
4
1.0
101
6 8 103
2
a. Input VSWR vs Frequency
4
6 8 102
2
FREQUENCY—MHz
4
b. Output VSWR vs Frequency
6 8 103
SR00235
Figure 21. Input/Output VSWR vs Frequency
ADDITIONAL READING ON SCATTERING
PARAMETERS
“S-Parameter Techniques for Faster, More Accurate Network Design”,
HP App Note 95-1, Richard W. Anderson, 1967, HP Journal.
For more information regarding S-parameters, please refer to
High-Frequency Amplifiers by Ralph S. Carson of the University of
Missouri, Rolla, Copyright 1985; published by John Wiley & Sons,
Inc.
“S-Parameter Design”, HP App Note 154, 1972.
+30
THIRD ORDER
INTERCEPT POINT
+20
1dB
COMPRESSION POINT
+10
OUTPUT LEVEL
dBm
2ND ORDER
INTERCEPT
POINT
FUNDAMENTAL
RESPONSE
0
-10
2ND ORDER
RESPONSE
-20
3RD ORDER
RESPONSE
-30
-40
-60
-50
-40
-30
-20
-10
0
+10
+20
+30
+40
INPUT LEVEL dBm
SR00236
Figure 22.
1992 Feb 24
11
Philips Semiconductors
Product specification
Wide-band high-frequency amplifier
NE/SA/SE5205A
SO8: plastic small outline package; 8 leads; body width 3.9mm
1992 Feb 24
12
SOT96-1
Philips Semiconductors
Product specification
Wide-band high-frequency amplifier
NE/SA/SE5205A
DIP8: plastic dual in-line package; 8 leads (300 mil)
1992 Feb 24
SOT97-1
13
Philips Semiconductors
Product specification
Wide-band high-frequency amplifier
NE/SA/SE5205A
DEFINITIONS
Data Sheet Identification
Product Status
Definition
Objective Specification
Formative or in Design
This data sheet contains the design target or goal specifications for product development. Specifications
may change in any manner without notice.
Preliminary Specification
Preproduction Product
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design
and supply the best possible product.
Product Specification
Full Production
This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes
at any time without notice, in order to improve design and supply the best possible product.
Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products,
including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright,
or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes
only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing
or modification.
LIFE SUPPORT APPLICATIONS
Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices,
or systems where malfunction of a Philips Semiconductors and Philips Electronics North America Corporation Product can reasonably be expected
to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips
Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully
indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 94088–3409
Telephone 800-234-7381
1992 Feb 24
Philips Semiconductors and Philips Electronics North America Corporation
register eligible circuits under the Semiconductor Chip Protection Act.
 Copyright Philips Electronics North America Corporation 1993
All rights reserved. Printed in U.S.A.
14
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