PHILIPS NE5209D

INTEGRATED CIRCUITS
NE/SA5209
Wideband variable gain amplifier
Product specification
RF Communications Handbook
Philips Semiconductors
1990 Aug 20
Philips Semiconductors
Product specification
Wideband variable gain amplifier
NE/SA5209
DESCRIPTION
PIN CONFIGURATION
The NE5209 represents a breakthrough in monolithic amplifier
design featuring several innovations. This unique design has
combined the advantages of a high speed bipolar process with the
proven Gilbert architecture.
N, D PACKAGES
VCC1
1
16
VCC2
The NE5209 is a linear broadband RF amplifier whose gain is
controlled by a single DC voltage. The amplifier runs off a single 5
volt supply and consumes only 40mA. The amplifier has high
impedance (1kΩ) differential inputs. The output is 50Ω differential.
Therefore, the 5209 can simultaneously perform AGC, impedance
transformation, and the balun functions.
GND1
2
15
GND2
INA
3
14
OUTA
GND1
4
13
GND2
INB
5
12
OUTB
GND1
6
11
GND2
The dynamic range is excellent over a wide range of gain setting.
Furthermore, the noise performance degrades at a comparatively
slow rate as the gain is reduced. This is an important feature when
building linear AGC systems.
VBG
7
10
GND2
VAGC
8
9
GND2
SR00237
Figure 1. Pin Configuration
FEATURES
• Gain to 1.5GHz
• 850MHz bandwidth
• High impedance differential input
• 50Ω differential output
• Single 5V power supply
• 0 - 1V gain control pin
• >60dB gain control range at 200MHz
• 26dB maximum gain differential
• Exceptional VCONTROL / VGAIN linearity
• 7dB noise figure minimum
• Full ESD protection
• Easily cascadable
APPLICATIONS
• Linear AGC systems
• Very linear AM modulator
• RF balun
• Cable TV multi-purpose amplifier
• Fiber optic AGC
• RADAR
• User programmable fixed gain block
• Video
• Satellite receivers
• Cellular communications
ORDERING INFORMATION
DESCRIPTION
TEMPERATURE RANGE
ORDER CODE
DWG #
16-Pin Plastic Small Outline (SO) package
0 to +70°C
NE5209D
SOT109-1
16-Pin Plastic Dual In-Line Package (DIP)
0 to +70°C
NE5209N
SOT28-4
16-Pin Plastic Small Outline (SO) package
-40 to +85°C
SA5209D
SOT109-1
16-Pin Plastic Dual In-Line Package (DIP)
-40 to +85°C
SA5209N
SOT28-4
1990 Aug 20
2
853-1453 00223
Philips Semiconductors
Product specification
Wideband variable gain amplifier
NE/SA5209
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
UNITS
VCC
Supply voltage
-0.5 to +8.0
V
PD
Power dissipation, TA = 25oC (still air)1
16-Pin Plastic DIP
16-Pin Plastic SO
1450
1100
mW
mW
TJMAX
Maximum operating junction temperature
150
°C
TSTG
Storage temperature range
-65 to +150
°C
NOTES:
1. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance, θJA:
16-Pin DIP: θJA = 85°C/W
16-Pin SO: θJA = 110°C/W
RECOMMENDED OPERATING CONDITIONS
SYMBOL
VCC
PARAMETER
Supply voltage
RATING
UNITS
VCC1 = VCC2 = 4.5 to 7.0V
V
TA
Operating ambient temperature range
NE Grade
SA Grade
0 to +70
-40 to +85
°C
°C
TJ
Operating junction temperature range
NE Grade
SA Grade
0 to +90
-40 to +105
°C
°C
DC ELECTRICAL CHARACTERISTICS
TA = 25oC, VCC1 = VCC2 = +5V, VAGC = 1.0V, unless otherwise specified.
LIMITS
SYMBOL
PARAMETER
ICC
Supply current
AV
Voltage gain (single-ended in/single-ended out)
AV
Voltage gain (single-ended in/differential out)
RIN
Input resistance (single-ended)
ROUT
Output resistance (single-ended)
VOS
Output offset voltage (output referred)
VIN
DC level on inputs
TEST CONDITIONS
MIN
TYP
MAX
43
48
DC tested
38
Over temperature1
30
DC tested, RL = 10kΩ
17
Over temperature1
16
DC tested, RL = 10kΩ
23
Over temperature1
22
DC tested at ±50µA
0.9
Over temperature1
0.8
DC tested at ±1mA
40
Over
temperature1
35
Over
temperature1
Over
temperature1
55
19
22
25
1.2
1.7
60
1.4
1.9
PSRR
VBG
1990 Aug 20
Over temperature1
(output referred)
Bandgap
g p reference voltage
g
Over temperature1
15
4.5V<VCC<7V
RBG = 10kΩ
1.2
Over temperature1
1.1
3
±100
2.4
dB
dB
kΩ
Ω
mV
2.4
2.6
1.7
20
Output offset supply rejection ratio
75
90
2.0
mA
1.5
±250
1.6
DC level on outputs
27
28
+20
VOUT
21
UNIT
V
2.9
3.1
V
45
dB
1.32
1.45
1.55
V
Philips Semiconductors
Product specification
Wideband variable gain amplifier
NE/SA5209
DC ELECTRICAL CHARACTERISTICS
TA = 25oC, VCC1 = VCC2 = +5.0V, VAGC = 1.0V, unless otherwise specified.
LIMITS
SYMBOL
RBG
VAGC
IBAGC
PARAMETER
Bandgap loading
AGC DC control voltage range
AGC pin DC bias current
TEST CONDITIONS
Over temperature1
Over
MIN
TYP
2
10
temperature1
MAX
kΩ
0-1.3
0V<VAGC<1.3V
-0.7
Over temperature1
UNIT
V
-6
-10
µA
NOTES:
1. “Over Temperature Range” testing is as follows:
NE is 0 to +70°C
SA is -40 to +85°C
At the time of this data sheet release, the D package over-temperature data sheet limits are guaranteed via guardbanded room temperature
testing only.
AC ELECTRICAL CHARACTERISTICS
TA = 25oC, VCC1 = VCC2 = +5.0V, VAGC = 1.0V, unless otherwise specified.
LIMITS
SYMBOL
PARAMETER
BW
-3dB bandwidth
GF
Gain flatness
VIMAX
VOMAX
NF
VIN-EQ
S12
∆G/∆VCC
∆G/∆T
CIN
TEST CONDITIONS
Over temperature1
MIN
TYP
600
850
UNIT
MHz
500
DC - 500MHz
+0.4
Over temperature1
+0.6
Maximum input voltage swing (single-ended) for
linear operation2
MAX
dB
200
mVP-P
Maximum output voltage swing (single-ended)
RL = 50Ω
400
mVP-P
for linear operation2
RL = 1kΩ
1.9
VP-P
RS = 50Ω, f = 50MHz
9.3
dB
Equivalent input noise voltage spectral density
f = 100MHz
2.5
nV/√Hz
Reverse isolation
f = 100MHz
-60
dB
0.3
dB/V
0.013
dB/°C
Noise figure (unmatched configuration)
Gain supply sensitivity (single-ended)
Gain temperature sensitivity
RL = 50Ω
Input capacitance (single-ended)
2
pF
BWAGC
-3dB bandwidth of gain control function
20
MHz
PO-1dB
1dB gain compression point at output
f = 100MHz
-3
dBm
PI-1dB
1dB gain compression point at input
f = 100MHz, VAGC
=0.1V
-10
dBm
IP3OUT
Third-order intercept point at output
f = 100MHz, VAGC
>0.5V
+13
dBm
IP3IN
Third-order intercept point at input
f = 100MHz, VAGC
<0.5V
+5
dBm
∆GAB
Gain match output A to output B
f = 100MHz, VAGC = 1V
0.1
dB
NOTE:
1. “Over Temperature Range” testing is as follows:
NE is 0 to +70°C
SA is -40 to +85°C
At the time of this data sheet release, the D package over-temperature data sheet limits are guaranteed via guardbanded room temperature
testing only.
2. With RL > 1kΩ, overload occurs at input for single-ended gain < 13dB and at output for single-ended gain > 13dB. With RL = 50Ω, overload
occurs at input for single-ended gain < 6dB and at output for single-ended gain > 6dB.
1990 Aug 20
4
Philips Semiconductors
Product specification
Wideband variable gain amplifier
NE/SA5209
gain. The 5209 has about a 1.2dB noise figure degradation for
each 2dB gain reduction. With the input matched for optimum gain,
the 8dB noise figure at 23dB gain will degrade to about a 20dB
noise figure at 0dB gain.
NE5209 APPLICATIONS
The NE5209 is a wideband variable gain amplifier (VGA) circuit
which finds many applications in the RF, IF and video signal
processing areas. This application note describes the operation of
the circuit and several applications of the VGA. The simplified
equivalent schematic of the VGA is shown in Figure 2. Transistors
Q1-Q6 form the wideband Gilbert multiplier input stage which is
biased by current source I1. The top differential pairs are biased
from a buffered and level-shifted signal derived from the VAGC input
and the RF input appears at the lower differential pair. The circuit
topology and layout offer low input noise and wide bandwidth. The
second stage is a differential transimpedance stage with current
feedback which maintains the wide bandwidth of the input stage.
The output stage is a pair of emitter followers with 50Ω output
impedance. There is also an on-chip bandgap reference with
buffered output at 1.3V, which can be used to derive the gain control
voltage.
The NE5209 also displays excellent linearity between voltage gain
and control voltage. Indeed, the relationship is of sufficient linearity
that high fidelity AM modulation is possible using the NE5209. A
maximum control voltage frequency of about 20MHz permits video
baseband sources for AM.
A stabilized bandgap reference voltage is made available on the
NE5209 (Pin 7). For fixed gain applications this voltage can be
resistor divided, and then fed to the gain control terminal (Pin 8).
Using the bandgap voltage reference for gain control produces very
stable gain characteristics over wide temperature ranges. The gain
setting resistors are not part of the RF signal path, and thus stray
capacitance here is not important.
The wide bandwidth and excellent gain control linearity make the
NE5209 VGA ideally suited for the automatic gain control (AGC)
function in RF and IF processing in cellular radio base stations,
Direct Broadcast Satellite (DBS) decoders, cable TV systems, fiber
optic receivers for wideband data and video, and other radio
communication applications. A typical AGC configuration using the
NE5209 is shown in Figure 3. Three NE5209s are cascaded with
appropriate AC coupling capacitors. The output of the final stage
drives the full-wave rectifier composed of two UHF Schottky diodes
BAT17 as shown. The diodes are biased by R1 and R2 to VCC such
that a quiescent current of about 2mA in each leg is achieved. An
NE5230 low voltage op amp is used as an integrator which drives
the VAGC pin on all three NE5209s. R3 and C3 filter the high
frequency ripple from the full-wave rectified signal. A voltage
divider is used to generate the reference for the non-inverting input
of the op amp at about 1.7V. Keeping D3 the same type as D1 and
D2 will provide a first order compensation for the change in Schottky
voltage over the operating temperature range and improve the AGC
performance. R6 is a variable resistor for adjustments to the op
amp reference voltage. In low cost and large volume applications
this could be replaced with a fixed resistor, which would result in a
slight loss of the AGC dynamic range. Cascading three NE5209s
will give a dynamic range in excess of 60dB.
Both the inputs and outputs should be capacitor coupled or DC
isolated from the signal sources and loads. Furthermore, the two
inputs should be DC isolated from each other and the two outputs
should likewise be DC isolated from each other. The NE5209 was
designed to provide optimum performance from a 5V power source.
However, there is some range around this value (4.5 - 7V) that can
be used.
The input impedance is about 1kΩ. The main advantage to a
differential input configuration is to provide the balun function.
Otherwise, there is an advantage to common mode rejection, a
specification that is not normally important to RF designs. The
source impedance can be chosen for two different performance
characteristics: Gain, or noise performance. Gain optimization will
be realized if the input impedance is matched to about 1kΩ. A 4:1
balun will provide such a broadband match from a 50Ω source.
Noise performance will be optimized if the input impedance is
matched to about 200Ω. A 2:1 balun will provide such a broadband
match from a 50Ω source. The minimum noise figure can then be
expected to be about 7dB. Maximum gain will be about 23dB for a
single-ended output. If the differential output is used and properly
matched, nearly 30dB can be realized. With gain optimization, the
noise figure will degrade to about 8dB. With no matching unit at the
input, a 9dB noise figure can be expected from a 50Ω source. If the
source is terminated, the noise figure will increase to about 15dB.
All these noise figures will occur at maximum gain.
The NE5209 is a very user-friendly part and will not oscillate in most
applications. However, in an application such as with gains in
excess of 60dB and bandwidth beyond 100MHz, good PC board
layout with proper supply decoupling is strongly recommended.
The NE5209 has an excellent noise figure vs gain relationship. With
any VGA circuit, the noise performance will degrade with decreasing
VCC
R3
R1
R2
Q7
A1
Q8
Q1
Q2
Q3
Q4
OUTB
50Ω
R4
I3
I2
VAGC
0–1V
OUTA
50Ω
+
–
INB
Q5
Q6
BANDGAP
REFERENCE
INA
VBG
I1
SR00238
Figure 2. Equivalent Schematic of the VGA
1990 Aug 20
5
Philips Semiconductors
Product specification
Wideband variable gain amplifier
RF/IF
INPUT
5209
NE/SA5209
AGC
OUTPUT
5209
5209
VCC
R1
R1
= R2
R3
R4
R5
R6
2πfL1
L1
=
=
=
=
=
=
=
R4
3.9k
360Ω
62k
100Ω
1k pot
R2
L1
L2
D1
D2
C4
BAT 17
–
5230
+
10k
L2
C3
R3
D3
R6
VCC
R5
BAT 17
SR00239
Figure 3. AGC Configuration Using Cascaded NE5209s
10µF
0.1µF
0.1µF
+
V
VIN
50Ω
1
VCC1
VCC2
16
2
GND1
GND2
15
3
INA
OUTA
14
VCC
5VDC
OUTA
0.1µF
0.1µF
0.1µF
4
GND1
GND2
13
5
INB
OUTB
12
OUTB
0.1µF
6
GND1
GND2
11
7
VBG
GND2
10
8
VAGC
GND2
9
(16-Pin SO, 150-mil wide)
SR00240
Figure 4. VGA AC Evaluation Board
+5V
50Ω
MINI CIRCUITS
2:1 BALUN
OR SIMILAR
50Ω
SOURCE
OUTPUT
5209
50Ω
1:2
VAGC
+1V
This circuit will exhibit about a 7dB
noise figure with approximately
22dB gain.
SR00241
Figure 5. Broadband Noise Optimization
1990 Aug 20
6
Philips Semiconductors
Product specification
Wideband variable gain amplifier
NE/SA5209
+5V
2:1 TURNS RATIO
LC TUNED
TRANSFORMER
50Ω
OUTPUT
50Ω
This circuit will exhibit about a 7dB
noise figure with approximately
22dB gain. Narrowband circuits
have the advantage of greater stability, particularly when multiple devices are cascaded.
5209
SOURCE
50Ω
+1V
VAGC
SR00242
Figure 6. Narrowband Noise Optimization
+5V
50Ω
MINI CIRCUITS
4:1 BALUN OR
EQUIVALENT
50Ω
SOURCE
OUTPUT
This circuit will exhibit about an 8dB
noise figure with 24dB gain.
5209
1:4
50Ω
VAGC
+1V
SR00243
Figure 7. Broadband Gain Optimization
+5V
4:1 TURNS RATIO
LC TUNED
TRANSFORMER
50Ω
OUTPUT
50Ω
This circuit will exhibit approximately an 8dB noise figure and 25dB gain.
5209
SOURCE
50Ω
VAGC
+1V
SR00244
Figure 8. Narrowband Gain Optimization
+5V
50Ω
50Ω
SOURCE
OUTPUT
50Ω
The noise figure of this configuration
will be approximately 15dB.
5209
50Ω
VAGC
+1V
SR00245
Figure 9. Simple Amplifier Configuration
+5V
50Ω
50Ω
SOURCE
OUTPUT
With the 50Ω source left unterminated, the noise figure is 9dB.
5209
50Ω
VAGC
+1V
SR00246
Figure 10. Unterminated Configuration
1990 Aug 20
7
Philips Semiconductors
Product specification
Wideband variable gain amplifier
NE/SA5209
+5V
50Ω
50Ω
SOURCE
OUTPUT
5209
Gain = 19dB + 20log10 VAGC
50Ω
VAGC
where VAGC =
VBG
R1
R2
V
R 1 R 2 BG
and is in units of Volts, for VAGC ≤ 1V
R2
SR00247
Figure 11. User-Programmable Fixed Gain Block
+5V
FULL CARRIER
AM (DSB)
50Ω
RF INPUT
50Ω
OUTPUT
5209
SOURCE
50Ω
All harmonic distortion products will be
at least -50dBc over the audio spectrum.
VAGC
.5V
R
9R
+5V
MODULATING
SIGNAL
SR00248
Figure 12. AM Modulator
50Ω
CRYSTAL
FILTER
OUTPUT
5209
5209
5209
50Ω
VAGC
VAGC
VAGC
The high input impedance to the NE5209 makes matching
to crystal filters relatively easy. The total delta gain of this
system will approach 80dB. IF frequencies well into the UHF
region can be configured with this type of architecture.
GAIN CONTROL
SIGNAL
SR00249
Figure 13. Receiver AGC IF Gain
VCC (+5V, unless otherwise noted)
RS
VS
±
RT
RL
5209
±
RT
VAGC
RL
SR00250
Figure 14. Test Set-up 1 (Used for all Graphs)
1990 Aug 20
8
Philips Semiconductors
Product specification
Wideband variable gain amplifier
NE/SA5209
10
20
VCC = 5.5V
VCC = 5.0V
VCC = 4.5V
9
5.5V
19
Differential Voltage Gain (dB)
8
19.5
7
S21 Magnitude
6
5
T = 25°C
RS = RL = 50Ω
Rt = ∞
f = 10MHz
4
3
2
5.0V
4.5V
18.5
18
17.5
RS = 0Ω
RL = ∞
Rt = ∞
VAGC = 1.1V
17
16.5
See Test Setup 1
16
DC Tested
See test-setup 1
1
15.5
0
15
0
0.2
0.4
0.6
0.8
VAGC (V)
1.2
1
–100
–50
0
50
Temperature (°C)
100
150
SR00251
SR00252
Figure 15. Gain vs VAGC and VCC
Figure 17. Voltage Gain vs Temperature and VCC
-55°C
10
55
+25°C
9
50
8
+125°C
Supply Current (mA)
6
S 21 Magnitude
VCC = 7.0V
45
7
5
4
RS = RL = 50Ω
Rt = ∞
See test-setup 1
3
2
VCC = 6.0V
40
VCC = 5.0V
VCC = 4.5V
35
30
25
See test-setup 1
1
20
–100
0
0
0.2
0.4
0.6
VAGC (V)
0.8
1
SR00253
0
50
100
150
SR00254
Figure 16. Insertion Gain vs VAGC and Temperature
1990 Aug 20
–50
Temperature (°C)
1.2
Figure 18. Supply Current vs Temperature and VCC
9
Philips Semiconductors
Product specification
Wideband variable gain amplifier
NE/SA5209
1.5
5
1.45
4.5
1.4
4
VCC = 7.0V
VCC = 7.0V
3.5
1.3
VCC = 4.5V
3
Output DC Voltage
Input Resistance (k Ω )
VCC = 6.0V
1.35
1.25
1.2
1.15
VCC = 5.0V
2.5
VCC = 4.5V
2
1.5
1.1
DC Tested
See test-setup 1
1
DC Tested
See test-setup 1
1.05
0.5
1
0
–100
–50
0
50
Temperature (°C)
100
–100
150
–50
0
50
100
150
Temperature (°C)
SR00255
SR00256
Figure 19. Input Resistance vs Temperature
Figure 21. Output Bias Voltage vs Temperature and VCC
2.5
2.5
2
VCC = 7.0V
VCC = 6.0V
VCC = 5.0V
VCC = 4.5V
1.5
DC OUTPUT SWING (V)
Input Bias Voltage (V)
2
1
1.5
VAGC = 1.1V
RL = 10kΩ
DC Tested
See test-setup 1
1
0.5
0.5
DC Tested
See test-setup 1
0
0
–100
–100
–50
0
50
Temperature (°C)
100
150
–50
0
50
100
SR00257
SR00258
Figure 20. Input Bias Voltage vs Temperature
1990 Aug 20
150
Temperature (°C)
Figure 22. DC Output Swing vs Temperature
10
Philips Semiconductors
Product specification
Wideband variable gain amplifier
NE/SA5209
16
20
1.1V
14
0.8V
10
12
VCC = 7.0V
VCC = 6.0V
VCC = 5.0V
VCC = 4.5V
S21 Magnitude (dB)
S21 Magnitude (dB)
0.4V
200mV
0
100mV
50mV
–10
25mV
–30
10
100
8
T = 25°C
VAGC = 1.1V
Rt = 50Ω
f = 10MHz
See Test Setup 1
6
4
T = 25°C
RS = RL =
50Ω
Rt = 50Ω
See Test
Setup 1
1000 1500
–20
10
2
0
–100
–50
0
50
100
150
Temperature (°C)
Frequency (MHz)
SR00259
SR00260
Figure 23. Insertion Gain vs Frequency and VAGC
Figure 25. Insertion Gain vs Temperature and VCC
15
0
5.5V
4.5V
–5
S22 (dB)
S21 Magnitude (dB)
10
5
–10
125°C
–15
T = 25°C
VAGC = 1.1V
RS = RL = 50Ω
Rt = 50Ω
See Test Setup 1
0
25°C
-55°C
–20
RS = RL = 50Ω
Rt = 50Ω
See Test Setup 1
–5
–25
10
100
10
1000 1500
Frequency (MHz)
100
1000 1500
Frequency (MHz)
SR00261
SR00262
Figure 24. Insertion Gain vs Frequency and VCC
1990 Aug 20
Figure 26. Output Return Loss vs Frequency
11
Philips Semiconductors
Product specification
Wideband variable gain amplifier
NE/SA5209
0
15
OUTPUT
–10
T = 25°C
RS = RL = 50Ω
Rt = 50Ω
f = 100MHz
See test-setup 1
10
–30
IM 3 Intercept (dBm)
S
Magnitude (dB)
12
–20
–40
–50
–60
T = 25°C
RS = RL = 50Ω
Rt = 50Ω
See test-setup 1
–70
5
INPUT
0
–80
–90
Frequency (MHz)
1500
10
100
1000
–5
0
0.2
0.4
0.6
0.8
1
VAGC (V)
SR00263
SR00264
Figure 27. Reverse Isolation vs Frequency
Figure 29. Third-Order Intermodulation Intercept vs VAGC
0
20
OUTPUT
18
–5
16
14
–10
–15
NF (dB)
P (dBm)
–1
12
INPUT
T = 25°C
RS = RL = 50Ω
Rt = 50Ω
f = 100MHz
See test-setup 1
–20
10
8
T = 25°C
RS = RL = 50Ω
Rt = ∞
f = 50MHz
See test-setup 1
6
4
–25
2
0
–30
0
0.2
0.4
0.6
0.8
1
0
VAGC (V)
0.2
0.4
0.6
VAGC (V)
0.8
SR00265
SR00266
Figure 28. 1dB Gain Compression vs VAGC
1990 Aug 20
1
Figure 30. Noise Figure vs VAGC
12
Philips Semiconductors
Product specification
Wideband variable gain amplifier
NE/SA5209
12
16
14
10
12
S21 Magnitude (dB)
0Ω Termination
on INB
NF (dB)
10
50Ω Termination
on INB
8
6
T = 25°C
VAGC = 1.1V
RS = RL = 50Ω
Rt = ∞ on INA
See test-setup 1
4
2
8
6
4
RS = RL = 50Ω
Rt = 50Ω
R1 = R2 = 10k
f = 100MHz
See Figure 10
2
0
10
100
Frequency (MHz)
0
1000
–60
–10
40
Temperature (°C)
90
SR00267
140
SR00268
Figure 31. Noise Figure vs Frequency
Figure 33. Fixed Gain vs Temperature
1.4
VCC = 7.0V
VCC = 6.0V
VCC = 5.0V
VCC = 4.5V
1.35
INA
OUTA
1.25
1.2
1.15
INB
1.1
GND
AGC
VBG
Bandgap Voltage (V)
1.3
+VCC GND
NE5209 OUTB
Bandgap Load = 2kΩ
TOP VIEW - COMPONENT SIDE
1.05
1
–100
–50
50
0
Temperature (°C)
100
150
SR00269
Figure 32. Bandgap Voltage vs Temperature and VCC
TOP VIEW - SOLDER SIDE
Figure 34. VGA AC Evaluation Board Layout
1990 Aug 20
13
SR00270
Philips Semiconductors
Product specification
Wideband variable gain amplifier
+VCC
NE/SA5209
GND
OUTA
INA
NE5209
INB
OUTB
TOP VIEW - COMPONENT SIDE
TOP VIEW - SOLDER SIDE
SR00271
Figure 35. AGC Configuration Using Cascaded NE5209s - Layout
AMP10101 / NE5219SO/DN8.90
TOP VIEW - COMPONENT SIDE
TOP VIEW - SOLDER SIDE
SR00272
Figure 36. VGA AC Evaluation Board Layout (DIP Package)
1990 Aug 20
14
Philips Semiconductors
Product specification
Wideband variable gain amplifier
NE/SA5209
DEFINITIONS
Data Sheet Identification
Product Status
Definition
Objective Specification
Formative or in Design
This data sheet contains the design target or goal specifications for product development. Specifications
may change in any manner without notice.
Preliminary Specification
Preproduction Product
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design
and supply the best possible product.
Product Specification
Full Production
This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes
at any time without notice, in order to improve design and supply the best possible product.
Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products,
including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright,
or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes
only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing
or modification.
LIFE SUPPORT APPLICATIONS
Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices,
or systems where malfunction of a Philips Semiconductors and Philips Electronics North America Corporation Product can reasonably be expected
to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips
Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully
indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 94088–3409
Telephone 800-234-7381
1990 Aug 20
Philips Semiconductors and Philips Electronics North America Corporation
register eligible circuits under the Semiconductor Chip Protection Act.
 Copyright Philips Electronics North America Corporation 1993
All rights reserved. Printed in U.S.A.
15