NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS (Units in mm) • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP (Bottom View) Gate 1.2 MAX. Drain 1.0 MAX. 4.4 MAX. Drain 0.8±0.15 9Z001 • CLASS AB OPERATION 0.6±0.15 5.7 MAX. Gate • SINGLE SUPPLY: 2.8 to 6.0 V Source A • HIGH POWER ADDED EFFICIENCY: 65% TYP @ VDS = 3.2 V, f = 915 MHz 1.5±0.2 Source 3 • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz 4.2 MAX. • SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX 0.4±0.15 DESCRIPTION • DIGITAL CELLULAR PHONES: 3.2 V GSM900/DCS 1800 Dual Band Handsets • OTHERS: Two-Way Pagers Retail Business Radio Special Mobile Radio Short Range Wireless PART NUMBER NE5520379A PACKAGE OUTLINE Functional Characteristics POUT MIN TYP dBm 35.5 Linear Gain (at PIN = +10 dBm) dB 16.0 ηD Drain Efficiency % 68 ηADD Power Added Efficiency % 65 ID Operating Drain Current A 1.0 Output Power dBm 31.0 Linear Gain (at PIN = +10 dBm) dB 8.5 ID Operating Drain Current mA 750 TEST CONDITIONS f = 915 MHz, VDS = 3.2 V, VGS = 2.5 V(RF OFF) (NOTE 1) f = 1785 MHz, VDS = 3.2 V, VGS = 2.5 V (NOTE 1) Drain Efficiency % ηADD Power Added Efficiency % IGSS Gate-to-Source Leakage Current nA 100 IDSS Drain-to-Source Leakage Current nA 100 VDS = 8.5 V VTH Gate Threshold Voltage V 2.0 VDS = 3.5 V, IDS = 1 mA gm BVDSS RTH Transconductance S Drain-to-Source Breakdown Voltage V Thermal Resistance °C/W 29 MAX 33.0 GL ηD Electrical DC Characteristics 79A UNITS GL POUT Output Power 0.2±0.1 APPLICATIONS ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS 3.6±0.2 0.9±0.2 NEC's NE5520379A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.2 V GSM900 handsets. Die are manufactured using NEC's NEWMOS technology (NEC's 0.6 μm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 35.5 dBm output power at 915 MHz and 3.2 V, or 34.6 dBm output power at 2.8 V by varying the gate voltage as a power control function. SYMBOLS 0.8 MAX. 5.7 MAX. 38 35 1.0 15 1.35 VGS = 6.0 V 2.5 VDS = 3.5 V, IDS1 = 0.8 A, IDS2 = 1.0 A 20 IDSS = 10 µA 5 Channel-to-Case Note: 1. DC performance is tested 100%. Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1 reject for several samples. California Eastern Laboratories NE5520379A ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C) RECOMMENDED OPERATING LIMITS SYMBOLS SYMBOLS PARAMETERS UNITS RATINGS PARAMETERS UNITS TYP MAX VDS Drain to Source Voltage V 15.0 VDS Drain to Source Voltage V 3.2 6.0 VGS Gate to Source Voltage V 5.0 VGS Gate to Source Voltage V 2.5 3.5 A 1.5 IDS Drain Current (Pulse Test) A 1.75 2.0 PIN Input Power dBm 25 26 ID Drain Current ID Drain Current (Pulse Test) A 3.0 PT Total Power Dissipation W 20 TCH Channel Temperature °C 125 TSTG Storage Temperature °C -65 to +125 2 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Duty Cycle ≤ 50%, Ton ≤ 1 s. ORDERING INFORMATION PART NUMBER QTY NE5520379A-T1A-A TYPICAL PERFORMANCE CURVES (TA = 25°C) QUIESCENT DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 10 000 4.0 3.4 V 3.2 V Quiescent Drain Current, ID (A) 3.6 V Drain Current, ID (A) 3.5 3.0 V 3.0 2.5 2.8 V 2.0 2.6 V 1.5 2.4 V 1.0 2.2 V 0.5 VDS = 3.2 V 1 000 100 10 2.0 V 0 1 2 3 4 5 6 7 8 9 Drain to Source Voltage, VDS (V) 10 1 1.0 1.5 2.0 2.5 Gate to Source Voltage, VGS (V) 3.0 NE5520379A TYPICAL PERFORMANCE CURVES (TA = 25°C) DRAIN EFFICIENCY, POWER ADDED EFFICIENCY vs. INPUT POWER OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER (460 MHz) 2000 1500 30 ID 25 1000 20 500 40 5 10 15 0 25 ηadd 50 0 0 2 500 Pout 2 000 25 1 000 20 500 10 15 20 25 30 100 0 35 f = 915 MHz ηd η add 50 0 5 10 1 500 20 1 000 ID 500 15 15 20 25 Input Power, Pin (dBm) 30 0 35 Drain Efficiency ,ηd (%) Powwer Added Efficiency, ηadd (%) 2 000 Drain Current, ID (mA) Output Power, Pout (dBm) 100 Pout 25 10 15 20 25 30 35 Input Power, Pin (dBm) 2 500 VDS = 3.2 V IDSQ = 600 mA f = 1 785 MHz 5 25 IDSQ = 600 mA OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER 10 20 VDS = 3.2 V Input Power, Pin (dBm) 30 15 DRAIN EFFICIENCY, POWER ADDED EFFICIENCY vs. INPUT POWER ID 35 10 5 OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER 1 500 5 ηd Input Power, Pin (dBm) 30 15 VDS = 3.6 V IDset = 150 mA f = 460 MHz Input Power, Pin (dBm) VDS = 3.2 V IDSQ = 600 mA f = 915 MHz 35 20 Drain Efficiency ,ηd (%) Powwer Added Efficiency, ηadd (%) 0 Drain Efficiency ,ηd (%) Powwer Added Efficiency, ηadd (%) Pout 100 Drain Current, ID (mA) 35 15 Output Power, Pout (dBm) 2500 VDS = 3.6 V IDset = 150 mA f = 460 MHz Drain Current, ID (mA) Output Power, Pout (dBm) 40 DRAIN EFFICIENCY, POWER ADDED EFFICIENCY vs. INPUT POWER VDS = 3.2 V IDSQ = 600 mA f = 1 785 MHz 50 ηd η add 0 5 10 15 20 25 Input Power, Pin (dBm) 30 35 NE5520379A TYPICAL PERFORMANCE CURVES (TA = 25°C) OUTPUT POWER, DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 35 2 500 2 000 1 500 ID 33 1 000 32 500 1.0 2.0 3.0 Gate to Source Voltage, VGS (V) 0 4.0 31 2 500 VDS = 3.2 V f = 1 785 MHz Pin = 25 dBm 34 31 0.0 33 Pout Pin = 25 dBm Pout 2 000 29 1 500 27 1 000 ID 25 23 0.0 1.0 500 2.0 3.0 Gate to Source Voltage, VGS (V) 0 4.0 Drain Current, ID (mA) Output Power, Pout (dBm) f = 915 MHz Output Power, Pout (dBm) VDS = 3.2 V Drain Current, ID (mA) 36 OUTPUT POWER, DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE NE5520379A TYPICAL SCATTERING PARAMETERS (TA = 25°C) Note: This file and many other s-parameter files can be downloaded from www.cel.com j50 60˚ 150˚ j10 0 90˚ 120˚ j100 j25 10 50 25 100 180˚ 0 -j10 Coordinates in Ohms Frequency in GHz VD = 2.4 V, ID = 300 mA -j100 -j25 30˚ -j50 0˚ -150˚ -30˚ -120˚ -90˚ -60˚ NE5520379A VD = 2.4 V, ID = 300 mA FREQUENCY GHz 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 4.00 S11 MAG 0.91 0.91 0.91 0.91 0.92 0.92 0.92 0.92 0.92 0.92 0.92 0.93 0.93 0.93 0.93 0.93 0.93 0.94 0.94 0.94 0.95 0.95 0.95 0.95 0.95 0.96 0.96 0.96 0.96 0.96 0.96 0.96 0.97 0.97 0.97 0.97 0.97 0.97 0.97 0.98 0.98 0.98 0.98 0.99 S21 ANG -166.00 -171.34 -174.19 -176.05 -177.47 -178.62 -179.56 179.62 178.83 178.12 177.42 176.76 176.09 175.48 174.86 174.22 173.60 173.03 172.43 170.05 168.90 167.71 166.62 165.46 164.33 163.28 162.22 161.21 160.17 159.17 158.29 157.41 156.53 155.72 154.92 154.17 153.44 152.77 152.20 151.52 150.94 150.36 149.78 148.45 MAG 4.96 3.32 2.48 1.98 1.63 1.39 1.20 1.06 0.94 0.85 0.77 0.70 0.64 0.59 0.54 0.50 0.47 0.44 0.41 0.32 0.28 0.25 0.23 0.21 0.19 0.17 0.16 0.14 0.13 0.12 0.11 0.11 0.10 0.09 0.09 0.08 0.08 0.07 0.07 0.06 0.06 0.06 0.05 0.04 S12 ANG 91.46 86.63 82.34 78.94 75.61 72.51 69.74 66.85 64.15 61.50 58.92 56.40 53.87 51.57 49.32 46.99 44.90 42.72 40.69 33.12 29.64 26.30 23.15 20.23 17.61 15.02 12.55 10.37 8.42 6.46 4.59 3.14 1.92 0.69 -0.82 -2.13 -3.31 -4.03 -4.64 -5.69 -5.93 -6.52 -6.88 -5.44 MAG 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.01 0.01 0.01 S22 ANG 2.83 -3.69 -4.78 -7.98 -9.01 -11.04 -14.40 -16.23 -18.73 -20.26 -19.69 -22.40 -24.70 -26.30 -27.01 -28.40 -29.48 -31.03 -31.65 -35.32 -38.66 -40.07 -40.31 -42.08 -41.45 -41.35 -40.16 -35.50 -30.05 -21.25 -15.26 -1.99 9.51 17.40 49.62 54.56 75.69 84.78 91.22 89.31 94.43 93.75 93.93 93.64 MAG 0.87 0.87 0.87 0.87 0.87 0.87 0.88 0.88 0.88 0.88 0.88 0.89 0.89 0.89 0.89 0.89 0.90 0.90 0.90 0.91 0.91 0.91 0.92 0.92 0.92 0.92 0.93 0.93 0.93 0.93 0.94 0.94 0.95 0.95 0.95 0.95 0.96 0.96 0.97 0.97 0.98 0.98 0.98 0.99 ANG -177.51 -178.85 -179.72 179.68 179.13 178.64 178.26 177.80 177.43 176.97 176.61 176.14 175.63 175.27 174.81 174.31 173.93 173.42 172.99 171.08 170.17 169.12 168.10 167.21 166.35 165.39 164.37 163.55 162.80 161.93 160.98 160.15 159.57 158.86 158.02 157.17 156.56 155.94 155.48 154.37 153.79 153.16 152.45 150.04 K MAG1 0.12 0.16 0.24 0.29 0.37 0.44 0.50 0.56 0.63 0.71 0.87 0.86 0.93 1.05 1.12 1.27 1.33 1.44 1.61 2.08 2.43 2.88 3.31 4.05 4.91 5.68 7.09 8.29 11.07 14.89 16.85 18.02 16.22 18.87 17.17 17.91 11.30 12.00 7.64 6.03 4.52 3.50 3.08 1.13 (dB) 24.77 22.87 21.67 20.65 19.83 19.13 18.71 18.21 17.79 17.43 17.25 16.77 16.44 14.89 13.95 12.74 12.17 11.53 10.79 8.96 8.10 7.18 6.55 5.86 5.12 4.38 3.84 3.46 2.90 2.19 1.67 1.65 1.49 0.98 0.60 0.80 0.89 0.68 0.86 0.83 1.47 1.69 1.43 4.11 Note: 1. Gain Calculation: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE5520379A TYPICAL SCATTERING PARAMETERS (TA = 25°C) Note: This file and many other s-parameter files can be downloaded from www.cel.com j50 120˚ j100 j25 25 10 50 100 -j50 NE5520379A VD = 3.0 V, ID = 600 mA FREQUENCY S11 MAG 0.93 0.93 0.93 0.93 0.93 0.93 0.93 0.93 0.93 0.94 0.94 0.94 0.94 0.94 0.94 0.94 0.94 0.94 0.94 0.94 0.95 0.95 0.95 0.95 0.95 0.95 0.95 0.96 0.96 0.96 0.96 0.96 0.96 0.96 0.96 0.97 0.97 0.97 0.97 0.97 0.97 0.98 0.98 0.98 0.99 Coordinates in Ohms Frequency in GHz VD = 3.0 V, ID = 600 mA -j100 -j25 S21 ANG -166.51 -171.79 -174.68 -176.58 -178.04 -179.24 179.79 178.92 178.11 177.36 176.64 175.96 175.28 174.66 174.05 173.41 172.80 172.21 171.63 170.41 169.32 168.20 167.05 166.00 164.89 163.80 162.78 161.76 160.78 159.78 158.80 157.95 157.10 156.24 155.45 154.66 153.93 153.22 152.55 152.00 151.33 150.77 150.20 149.63 148.33 MAG 5.08 3.41 2.54 2.03 1.69 1.44 1.25 1.11 0.99 0.89 0.81 0.75 0.69 0.63 0.59 0.55 0.51 0.48 0.45 0.40 0.36 0.32 0.29 0.27 0.24 0.22 0.20 0.19 0.18 0.16 0.15 0.14 0.13 0.12 0.12 0.11 0.10 0.10 0.09 0.09 0.08 0.08 0.07 0.07 0.05 30˚ 180˚ 0 -j10 GHz 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 4.00 60˚ 150˚ j10 0 90˚ 0˚ -150˚ -30˚ -120˚ S12 ANG 92.43 88.12 84.33 81.48 78.54 75.97 73.62 71.09 68.88 66.51 64.31 62.14 59.81 57.87 55.81 53.68 51.88 49.77 47.95 44.15 40.82 37.55 34.19 30.96 28.24 25.67 22.92 20.12 17.88 16.09 14.12 12.01 10.33 9.11 7.63 5.72 3.94 2.73 1.96 1.15 -0.21 -0.76 -1.47 -2.27 -2.98 MAG 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.01 0.01 0.01 0.01 -90˚ S22 ANG 4.88 -2.92 -2.57 -2.60 -5.09 -7.10 -9.56 -11.04 -12.64 -12.76 -13.34 -14.37 -16.01 -17.13 -16.95 -18.56 -19.71 -19.61 -19.95 -24.20 -23.13 -24.29 -25.78 -25.39 -25.03 -22.37 -20.35 -18.82 -12.65 -5.72 2.28 9.59 16.52 24.13 38.01 48.37 55.62 64.87 69.74 81.95 80.85 86.32 86.22 87.98 88.38 MAG 0.89 0.89 0.89 0.89 0.89 0.89 0.89 0.89 0.89 0.90 0.89 0.90 0.90 0.90 0.90 0.90 0.90 0.90 0.90 0.91 0.91 0.91 0.91 0.92 0.92 0.92 0.92 0.92 0.93 0.93 0.93 0.93 0.94 0.95 0.94 0.94 0.95 0.96 0.96 0.96 0.97 0.97 0.98 0.97 0.98 ANG -178.46 -179.65 179.54 178.98 178.33 177.89 177.44 176.93 176.63 176.06 175.72 175.29 174.68 174.42 173.89 173.39 173.13 172.51 172.16 171.11 170.30 169.48 168.40 167.30 166.57 165.86 164.91 163.74 162.96 162.54 161.73 160.62 159.68 159.46 158.99 158.00 156.90 156.45 156.03 155.48 154.23 153.57 153.08 152.19 149.87 -60˚ K MAG1 0.14 0.15 0.25 0.33 0.39 0.47 0.52 0.59 0.68 0.75 0.93 0.91 1.02 1.14 1.18 1.39 1.40 1.52 1.71 1.93 2.13 2.56 3.14 3.52 4.07 4.72 6.13 7.13 7.85 9.04 11.69 12.90 11.53 10.27 11.45 10.95 10.04 7.62 7.17 6.39 5.03 3.62 3.20 3.09 1.37 (dB) 26.14 24.16 23.01 21.95 21.14 20.48 20.03 19.51 19.16 18.72 18.57 18.08 17.03 15.30 14.78 13.45 13.11 12.48 11.68 10.81 10.08 9.13 8.10 7.56 7.05 6.28 5.28 4.85 4.65 4.16 3.15 2.58 2.95 2.98 2.19 1.62 2.00 2.62 2.29 2.11 2.21 3.03 3.00 2.26 3.81 Note: 1. Gain Calculation: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE5520379A APPLICATION CIRCUIT (900 MHz) VG 1.7 C4 U1 Drain C14 Gate 0.5 C7 RFOUT J2 C1 1.0 R1 C6 4.0 1.2 C5 A 3 J1 C2 C8 C10 C12 C13 RFIN 79A PACKAGE J4 5.9 GND J3 C3 C9 C11 P1 P.C.B. LAYOUT (Units in mm) VD NE55XXX79A-EV 100637 Source LEAD ON DRAIN IS LARGER SOURCE Note: Use rosin or other material to prevent solder from penetrating through-holes. DRAIN VGG(+2.0 V) VDD (+3.1 V) + 4.7uF 0.1uF 1000pF 100pF 100pF NE5520379A 5KΩ 10pF RF Input 8.2pF 18pF TF-100637 MA101J MCR03J512 MCH185A180JK MCH185A4R7CK MCH185A100DK MCH185A8R2DK TAJB475K010R GRM40X7R104K025BL GRM40C0G102J050BD NE5520379A 703401 1250-003 2052-5636-02 FD-100637 C2, C3 R1 C4, C7 C14 C1, C5 C6 C12, C13 C10, C11 C8, C9 U1 P1 J3, J4 J1, J2 PCB + 1000pF 0.1uF 4.7uF 10pF 4.7pF 18pF NE5520379A PARTS LIST 1 4 2 1 2 1 2 1 2 2 2 1 1 1 2 1 0.5 6.1 A 3 GATE Through hole φ 0.2 × 33 0.5 TEST CIRCUIT BLK 2-56 X 3/16 PHILLIPS PAN HEAD CASE 1100 pF CAP MURATA 0603 5.1K OHMS RESISTOR ROHM 0603 18 pF CAP ROHM 0603 4.7 pF CAP ROHM 0603 10 pF CAP ROHM 0603 8.2 pF CAP ROHM CASE B 4.7 uF CAP ATC 0805 .1 uF CAP MURATA 0805 1000 pF CAP MURATA6 IC NEC, LD-MOS FET GROUND LUG CONCORD FEEDTHRU MURATA FLANGE MOUNT JACK RECEPTACLE NE5520379A-EVAL FAB. DRAWING 16 15 14 13 12 11 10 9 8 7 5 4 3 2 1 RF Output NE5520379A RECOMMENDED SOLDERING CONDITIONS This prod� those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow VPS Wave Soldering Soldering Conditions Condition Symbol Peak temperature (package surface temperature) : 260°C or below Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120±30 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (package surface temperature) : 215°C or below Time at temperature of 200°C or higher : 25 to 40 seconds Preheating time at 120 to 150°C : 30 to 60 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (molten solder temperature) : 260°C or below Time at peak temperature : 10 seconds or less IR260 VP215 WS260 Preheating temperature (package surface temperature) : 120°C or below Partial Heating Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (pin temperature) : 350°C or below Soldering time (per pin of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below HS350-P3 Caution Do not use different soldering methods together (except for partial heating). Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 03/08/2005 A Business Partner of NEC Compound Semiconductor Devices, Ltd. 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A Not Detected Lead (Pb) < 1000 PPM Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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