Renesas NE5550979A-T1-A Silicon power ldmos fet Datasheet

Data Sheet
NE5550979A
R09DS0031EJ0300
Rev.3.00
Mar 12, 2013
Silicon Power LDMOS FET
FEATURES
•
•
•
•
•
High Output Power
: Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
High Linear gain
: GL = 22 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm)
High ESD tolerance
: ESD tolerance > 8 kV (IEC61000-4-2, Contact discharge)
Suitable for VHF to UHF-BAND Class-AB power amplifier.
APPLICATIONS
• 150 MHz Band Radio System
• 460 MHz Band Radio System
• 900 MHz Band Radio System
ORDERING INFORMATION
Part Number
NE5550979A
Order Number
NE5550979A-A
NE5550979A-T1
NE5550979A-T1-A
Package
79A
(Pb Free)
Marking
W6
Supplying Form
• 12 mm wide embossed taping
• Gate pin faces the perforation side of the tape
•
•
•
•
•
•
12 mm wide embossed taping
Gate pin faces the perforation side of the tape
Qty 1 kpcs/reel
NE5550979A-T1A NE5550979A-T1A-A
12 mm wide embossed taping
Gate pin faces the perforation side of the tape
Qty 5 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE5550979A
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Total Power Dissipation Note
Channel Temperature
Storage Temperature
Note:
Symbol
VDS
VGS
IDS
Ptot
Ratings
30
6.0
3.0
25
Unit
V
V
A
W
Tch
Tstg
150
−55 to +150
°C
°C
Value at TC = 25°C
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0031EJ0300 Rev.3.00
Mar 12, 2013
Page 1 of 11
NE5550979A
RECOMMENDED OPERATING RANGE (TA = 25°C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Input Power
Symbol
VDS
VGS
IDS
Pin
Test Conditions
f = 460 MHz, VDS = 7.5 V
MIN.
−
1.65
−
−
TYP.
7.5
2.20
1.7
25
MAX.
9.0
2.85
−
30
Unit
V
V
A
dBm
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
Parameter
DC Characteristics
Gate to Source Leakage Current
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
Gate Threshold Voltage
Drain to Source Breakdown Voltage
Transconductance
Thermal Resistance
RF Characteristics
Output Power
Drain Current
Power Drain Efficiency
Power Added Efficiency
Linear Gain
Output Power
Drain Current
Power Drain Efficiency
Power Added Efficiency
Linear Gain
Output Power
Drain Current
Power Drain Efficiency
Power Added Efficiency
Linear Gain
Symbol
IGSS
IDSS
Vth
BVDSS
Gm
Rth
Pout
IDS
ηd
ηadd
GL Note 1
Pout
IDS
ηd
ηadd
GL Note 2
Pout
IDS
ηd
ηadd
GL Note 1
Test Conditions
MIN.
TYP.
MAX.
Unit
−
−
−
−
100
10
nA
μA
VDS = 7.5 V, IDS = 1.0 mA
IDS = 10 μA
VDS = 7.5 V, IDS = 700±100 mA
Channel to Case
1.15
25
1.8
−
1.65
37
2.2
5.0
2.25
−
2.9
−
V
V
S
°C/W
f = 460 MHz, VDS = 7.5 V,
Pin = 25 dBm,
IDset = 200 mA (RF OFF)
38.5
−
−
−
−
−
−
−
−
−
−
−
−
−
−
39.5
1.70
68
66
22.0
39.6
1.60
75
73
25.0
38.6
1.76
55
52
16.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
dBm
A
%
%
dB
dBm
A
%
%
dB
dBm
A
%
%
dB
VGS = 6.0 V
VDS = 25 V
f = 157 MHz, VDS = 7.5 V,
Pin = 23 dBm,
IDset = 200 mA (RF OFF)
f = 900 MHz, VDS = 7.5 V,
Pin = 27 dBm,
IDset = 200 mA (RF OFF)
Note 1 : Pin = 10 dBm
Note 2 : Pin = 5 dBm
Remark DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
R09DS0031EJ0300 Rev.3.00
Mar 12, 2013
Page 2 of 11
NE5550979A
TEST CIRCUIT SCHEMATIC FOR 460 MHz
VGS
VDS
R1
C1
L1
C1
IN
50 Ω
OUT
C10
C22
C11
C12
C20
FET
NE5550979A (WS)
50 Ω
C21
COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS
<R>
Symbol
C1
C10
C11
Value
1μF
100 pF
24 pF
Type
GRM31CR72A105KA01B
GRM1882C1H101JA01
ATC100A240JW
Maker
Murata
Murata
C12
2.4 pF
ATC100A2R4BW
American Technical
Ceramics
C20
27 pF
ATC100A270JW
American Technical
Ceramics
C21
1.8 pF
ATC100A1R8BW
American Technical
Ceramics
C22
100 pF
ATC100A101JW
R1
4.7 kΩ
L1
PCB
SMA Connecter
123 nH
−
−
1/10 W Chip Resistor
SSM_RG1608PB472
φ 0.5 mm, φ D = 3 mm, 10 Turns
R1766, t = 0.4 mm, εr = 4.5, size = 30 × 48 mm
WAKA 01K0790-20
American Technical
Ceramics
SSM
American Technical
Ceramics
Ohesangyou
Panasonic
WAKA
COMPONENT LAYOUT OF TEST CIRCUIT FOR 460 MHz
V GS
GND
V DS
C1
C1
L1
C12
C20 C21
R1
C11
C22
C10
R09DS0031EJ0300 Rev.3.00
Mar 12, 2013
Page 3 of 11
NE5550979A
TYPICAL CHARACTERISTICS 1 (TA = 25°C)
R: f = 460MHz, VDS = 3.6/4.5/6/7.5/8.4/9 V, IDset = 200 mA, Pin = 0 to 32 dBm
IM: f1 = 460MHz, f2 = 461 MHz, VDS = 3.6/4.5/6/7.5/8.4/9 V, IDset = 200mA, Pout (2 tone) = 12 to 38 dBm
POWER GAIN, POWER ADDED
EFFICIENCY vs. INPUT POWER
40
Output Power Pout (dBm)
35
4.5
30
3.5
3.0
25
2.5
20
2.0
15
1.5
10
1.0
5
0.5
0
5
35
4.0
30
0
–5
40
10
15
20
25
30
Power Gain GP (dB)
45
5.0
Pout - 3.6 V
Pout - 4.5 V
Pout - 6.0 V
Pout - 7.5 V
Pout - 9 V
IDS - 3.6 V
IDS - 4.5 V
IDS - 6.0 V
IDS - 7.5 V
IDS - 9 V
Drain Current IDS (A)
50
0.0
35
25
15
30
10
20
5
10
0
5
2f0 - 3.6 V
2f0 - 4.5 V
2f0 - 6.0 V
2f0 - 7.5 V
3f0 - 3.6 V
3f0 - 4.5 V
3f0 - 6.0 V
3f0 - 7.5 V
2f0 - 9 V
3f0 - 9 V
–40
–50
–60
15
20
25
30
35
10
15
20
25
30
0
35
IM3/IM5 vs. 2 TONES OUTPUT POWER
0
–30
–70
10
50
Input Power Pin (dBm)
3rd/5th Order Intermodulation Distortion IM3/IM5 (dBc)
2nd Harmonics 2f0 (dBc)
3rd Harmonics 3f0 (dBc)
–20
60
40
0
–5
2f0, 3f0 vs. OUTPUT POWER
–10
70
20
Input Power Pin (dBm)
0
80
Gp - 3.6 V
Gp - 4.5 V
Gp - 6 V
Gp - 7.5 V
Gp - 9 V
η add - 3.6 V
η add - 4.5 V
η add - 6.0 V
η add - 7.5 V
η add - 9 V
Power Added Efficiency η add (%)
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
40
45
Output Power Pout (dBm)
–10
–20
IM3 - 3.6 V
IM3 - 4.5 V
IM3 - 6 V
IM3 - 7.5 V
IM5 - 3.6 V
IM5 - 4.5 V
IM5 - 6.0 V
IM5 - 7.5 V
IM3 - 9 V
IM5 - 9 V
–30
–40
–50
–60
–70
10
15
20
25
30
35
40
2 Tones Output Power Pout (2 tone) (dBm)
Remark The graphs indicate nominal characteristics.
R09DS0031EJ0300 Rev.3.00
Mar 12, 2013
Page 4 of 11
NE5550979A
<R>
TEST CIRCUIT SCHEMATIC FOR 157 MHz
VGS
VDS
R1
C1
L1
C1
IN
50 Ω
OUT
C10
L11
C11
<R>
C12
C24
L20
FET
NE5550979A
C20
C21
C22
50 Ω
C23
COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS
Symbol
C1
C10
C11
Value
1μF
100 pF
4.7 pF
Type
GRM31CR72A105KA01B
GRM1882C1H101JA01
ATC100A4R7CT
C12
39 pF
ATC100A390JT
American Technical
Ceramics
C20
2.0 pF
ATC100A2R0CT
American Technical
Ceramics
C21
22 pF
ATC100A220JT
American Technical
Ceramics
C22
68 pF
ATC100A680JT
American Technical
Ceramics
C23
12 pF
ATC100A120JT
American Technical
Ceramics
C24
100 pF
ATC100A101JT
R1
4.7 kΩ
L1
L11
L20
PCB
SMA Connecter
123 nH
27 nH
35 nH
−
−
1/10 W Chip Resistor
SSM_RG1608PB472
φ 0.5 mm, φ D = 3 mm, 10 Turns
LLQ2012-F27N
φ 0.5 mm, φ D = 2.4 mm, 5 Turns
R1766, t = 0.4 mm, εr = 4.5, size = 30 × 48 mm
WAKA 01K0790-20
American Technical
Ceramics
SSM
R09DS0031EJ0300 Rev.3.00
Mar 12, 2013
Maker
Murata
Murata
American Technical
Ceramics
Ohesangyou
TOKO
Ohesangyou
Panasonic
WAKA
Page 5 of 11
NE5550979A
COMPONENT LAYOUT OF TEST CIRCUIT FOR 157 MHz
GND
VGS
VDS
C1
C1
L1
L11
C12
C11
C10
C20
C21
C22
R1
L20
C23 C24
TYPICAL CHARACTERISTICS 2 (TA = 25°C)
f = 157 MHz, VDS = 3.6/4.5/6/7.5/9 V, IDset = 200 mA, Pin = 0 to 27 dBm
POWER GAIN, POWER ADDED
EFFICIENCY vs. INPUT POWER
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
4.5
40
4.0
35
35
3.5
30
3.0
25
20
15
2.5
2.0
IDS - 3.6 V
IDS - 4.5 V
IDS - 6 V
IDS - 7.5 V
IDS - 9 V
1.0
5
0.5
0
5
80
Gp - 3.6 V
Gp - 4.5 V
Gp - 6 V
Gp - 7.5 V
Gp - 9 V
η add - 3.6 V
η add - 4.5 V
η add - 6 V
η add - 7.5 V
η add - 9 V
70
60
25
50
20
40
15
30
10
20
5
10
1.5
10
0
–5
30
Power Gain GP (dB)
Output Power Pout (dBm)
40
Pout - 3.6 V
Pout - 4.5 V
Pout - 6.0 V
Pout - 7.5 V
Pout - 9 V
Drain Current IDS (A)
45
10
15
20
Input Power Pin (dBm)
R09DS0031EJ0300 Rev.3.00
Mar 12, 2013
25
0.0
30
0
–5
0
5
10
15
20
25
Power Added Efficiency η add (%)
R:
0
30
Input Power Pin (dBm)
Page 6 of 11
NE5550979A
TEST CIRCUIT SCHEMATIC FOR 900 MHz
VGS
VDS
R1
C1
L1
C1
IN
50 Ω
OUT
C10
C23
C11
<R>
FET
NE5550979A
C20
C21
50 Ω
C22
COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS
Symbol
C1
C10
C11
Value
1μF
100 pF
15 pF
Type
GRM31CR72A105KA01B
GRM1882C1H101JA01
ATC100A150JW
C20
3.3 pF
ATC100A3R3BW
American Technical
Ceramics
C21
3.3 pF
ATC100A3R3BW
American Technical
Ceramics
C22
12 pF
ATC100A120JT
American Technical
Ceramics
C23
100 pF
ATC100A101JT
R1
4.7 kΩ
L1
PCB
SMA Connecter
123 nH
−
−
1/10 W Chip Resistor
SSM_RG1608PB472
φ 0.5 mm, φ D = 3 mm, 10 Turns
R1766, t = 0.4 mm, εr = 4.5, size = 30 × 48 mm
WAKA 01K0790-20
American Technical
Ceramics
SSM
R09DS0031EJ0300 Rev.3.00
Mar 12, 2013
Maker
Murata
Murata
American Technical
Ceramics
Ohesangyou
Panasonic
WAKA
Page 7 of 11
NE5550979A
COMPONENT LAYOUT OF TEST CIRCUIT FOR 900 MHz
VGS
VDS
C1
C1
L1
R1
C22
C11
C10
C23
C20
C21
TYPICAL CHARACTERISTICS 3 (TA = 25°C)
RF: f = 900 MHz VDS = 3.6/4.5/6/7.5/9 V, IDset = 200 mA, Pin = 0 to 32 dBm
POWER GAIN, POWER ADDED
EFFICIENCY vs. INPUT POWER
Output Power Pout (dBm)
40
35
4.5
4.0
30
3.5
30
3.0
25
2.5
20
2.0
15
1.5
10
1.0
5
0.5
0
–5
0
5
35
10
15
20
25
30
0.0
35
Input Power Pin (dBm)
Power Gain GP (dB)
45
40
5.0
Pout - 3.6 V
Pout - 4.5 V
Pout - 6.0 V
Pout - 7.5 V
Pout - 9 V
IDS - 3.6 V
IDS - 4.5 V
IDS - 6.0 V
IDS - 7.5 V
IDS - 9 V
Drain Current IDS (A)
50
25
80
Gp - 3.6 V
Gp - 4.5 V
Gp - 6 V
Gp - 7.5 V
Gp - 9 V
η add - 3.6 V
η add - 4.5 V
η add - 6.0 V
η add - 7.5 V
η add - 9 V
70
60
50
20
40
15
30
10
20
5
10
0
–5
0
5
10
15
20
25
30
Power Added Efficiency η add (%)
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
0
35
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
R09DS0031EJ0300 Rev.3.00
Mar 12, 2013
Page 8 of 11
NE5550979A
S-PARAMETERS
S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the
parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[Products] → [RF Devices] → [Device Parameters]
URL http://www.renesas.com/products/microwave/
R09DS0031EJ0300 Rev.3.00
Mar 12, 2013
Page 9 of 11
NE5550979A
PACKAGE DIMENSIONS
79A (UNIT: mm)
Source
1.0 MAX.
0.8±0.15
W
Drain
Gate
Drain
0.4±0.15
1.2 MAX.
Source
4.4 MAX.
1.5±0.2
21001
4.2 MAX.
6
Gate
0.6±0.15
5.7 MAX.
(Bottom View)
0.8 MAX.
5.7 MAX.
0.9±0.2
0.2±0.1
3.6±0.2
79A PACKAGE RECOMMENDED P.C.B. LAYOUT (UNIT: mm)
4.0
1.7
Source
Stop up the hole with a rosin or
something to avoid solder flow.
Drain
1.2
0.5
1.0
5.9
Gate
Through Hole: φ 0.2 × 33
0.5 0.5
6.1
R09DS0031EJ0300 Rev.3.00
Mar 12, 2013
Page 10 of 11
NE5550979A
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
Soldering Conditions
Peak temperature (package surface temperature)
Time at peak temperature
Time at temperature of 220°C or higher
Preheating time at 120 to 180°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 260°C or below
: 10 seconds or less
: 60 seconds or less
: 120±30 seconds
: 3 times
: 0.2% (Wt.) or below
Condition Symbol
IR260
Wave Soldering
Peak temperature (molten solder temperature)
: 260°C or below
Time at peak temperature
: 10 seconds or less
Preheating temperature (package surface temperature)
: 120°C or below
Maximum number of flow processes
: 1 time
Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below
WS260
Partial Heating
Peak temperature (terminal temperature)
: 350°C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below
HS350
CAUTION
Do not use different soldering methods together (except for partial heating).
R09DS0031EJ0300 Rev.3.00
Mar 12, 2013
Page 11 of 11
Revision History
Rev.
Date
NE5550979A Data Sheet
Description
Summary
Page
1.00
Nov 25, 2011
−
2.00
Jul 04, 2012
p.1
Modification of ORDERING INFORMATION
p.5
Addition of TEST CIRCUIT SCHEMATIC FOR 157 MHz
p.6
Addition of COMPONENT LAYOUT OF TEST CIRCUIT FOR 157 MHz
p.7
Addition of TEST CIRCUIT SCHEMATIC FOR 900 MHz
p.8
Addition of COMPONENT LAYOUT OF TEST CIRCUIT FOR 900 MHz
3.00
Mar 12, 2013
First edition issued
p.9
Modification of S-PARAMETERS
P3
Modification of COMPONENTS OF TEST CIRCUIT FOR MEASURING
ELECTRICAL CHARACTERISTICS
P5
Modification of TEST CIRCUIT SCHEMATIC FOR 157 MHz
P7
Modification of COMPONENTS OF TEST CIRCUIT FOR MEASURING
ELECTRICAL CHARACTERISTICS
Modification of COMPONENTS OF TEST CIRCUIT FOR MEASURING
ELECTRICAL CHARACTERISTICS
All trademarks and registered trademarks are the property of their respective owners.
C-1
Notice
1.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
use of these circuits, software, or information.
2.
Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics
3.
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or
assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or
others.
4.
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Renesas Electronics assumes no responsibility for any losses incurred by you or
5.
Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The recommended applications for each Renesas Electronics product depends on
third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product.
the product's quality grade, as indicated below.
"Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic
equipment; and industrial robots etc.
"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc.
Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical
implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it
in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. Renesas Electronics shall not be in any way liable for any damages or losses
incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by Renesas Electronics.
6.
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.
7.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,
please evaluate the safety of the final products or systems manufactured by you.
8.
Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
9.
Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or
regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the
development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and
regulations and follow the procedures required by such laws and regulations.
10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the
contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics
products.
11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1)
"Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2)
"Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
http://www.renesas.com
SALES OFFICES
Refer to "http://www.renesas.com/" for the latest and detailed information.
California Eastern Laboratories, Inc.
4590 Patrick Henry Drive, Santa Clara, California 95054, U.S.A.
Tel: +1-408-919-2500, Fax: +1-408-988-0279
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-651-700, Fax: +44-1628-651-804
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2013 Renesas Electronics Corporation. All rights reserved.
[Colophon 2.2]
Similar pages