NEC NE856M23 Npn silicon transistor Datasheet

PRELIMINARY DATA SHEET
NPN SILICON TRANSISTOR NE856M23
OUTLINE DIMENSIONS (Units in mm)
FEATURES
PACKAGE OUTLINE M23
NEW MINIATURE M23 PACKAGE:
– World's smallest transistor package footprint —
leads are completely underneath package body
– Low profile/0.55 mm package height
– Ceramic substrate for better RF performance
•
LOW NOISE FIGURE:
NF = 1.4 dB at 1 GHz
•
HIGH COLLECTOR CURRENT:
IC MAX = 100 mA
0.5
0.25
1
0.4
1.0
•
2
DESCRIPTION
0.15
0.6
0.2
0.15
BOTTOM VIEW
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
0.55
The NE856M23 transistor is designed for low cost amplifier
and oscillator applications. Low noise figure, high gain and high
current capability equate to wide dynamic range and excellent
linearity. NEC's new low profile/ceramic substrate style "M23"
package is ideal for today's portable wireless applications. The
NE856 is also available in chip, Micro-x, and eight different low
cost plastic surface mount package styles.
0.25
3
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
NE856M23
2SC5649
M23
UNITS
MIN
GHz
3
fT
Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz
NF
Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz
dB
Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz
dB
|S21E|2
hFE2
Forward Current Gain at VCE = 3 V, IC = 7 mA
ICBO
Collector Cutoff Current at VCB = 10 V, IE = 0
µA
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
µA
CRE3
Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz
pF
TYP
4.5
1.4
7
MAX
2.5
10.0
80
145
1
1
0.7
1.5
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
California Eastern Laboratories
NE856M23
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
PARAMETERS
UNITS
RATINGS
VCBO
Collector to Base Voltage
V
20
VCEO
Collector to Emitter Voltage
V
12
VEBO
Emitter to Base Voltage
V
3
IC
Collector Current
mA
100
PT
Total Power Dissipation
mW
TBD
TJ
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
120
VCE = 3 V
100
Collector Current, IC (mA)
SYMBOLS
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
80
60
40
20
0
0
TYPICAL PERFORMANCE CURVES (TA = 25°C)
0.4
0.6
0.8
1
Base to Emitter Voltage, VBE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
120
1000
IB = 40 µA step
VCE = 3 V
400 µA
100
80
60
200 µA
40
DC Current Gain, hFE
Collector Current, IC (mA)
0.2
100
20
IB = 40 µA
10
0
2
4
6
8
10
12
0.01
14
1
10
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
NOISE FIGURE/ASSOCIATED GAIN vs.
COLLECTOR CURRENT
20
10
VCE = 3 V
f = 1 GHz
VCE = 3 V
f = 2 GHz
7
100
Collector Current, IC (mA)
8
16
8
6
Noise Figure, NF (dB)
Gain Bandwidth Product, fT (GHz)
0.1
Collector to Emitter Voltage, VCE (V)
5
4
3
2
GA
6
12
4
8
2
4
Associated Gain, GA (dB)
0
1
NF
0
0
1
10
100
Collector Current, IC (mA)
EXCLUSIVE NORTH AMERICAN AGENT FOR
1
10
0
100
Collector Current, IC (mA)
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
02/10/2000
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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