NEC NESG220033 Npn sige rf transistor for uhf-band, low noise, low distortion amplification 3-pin minimold (33 pkg) Datasheet

DATA SHEET
NPN SILICON GERMANIUM RF TRANSISTOR
NESG220033
NPN SiGe RF TRANSISTOR FOR
UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION
3-PIN MINIMOLD (33 PKG)
FEATURES
• The device is an ideal choice for low noise, low distortion amplification.
NF = 0.75 dB TYP. @ VCE = 5 V, IC = 10 mA, f = 1 GHz
• PO (1 dB) = 21.5 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz
• OIP3 = 35 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz
• Maximum stable power gain: MSG =14.0 dB TYP. @ VCE = 5 V, IC = 40 mA, f = 1 GHz
• SiGe HBT technology (UHS2) : fT = 12.5 GHz
• This product is improvement of ESD of NESG2xxx series.
• 3-pin minimold (33 PKG)
ORDERING INFORMATION
Part Number
NESG220033
Order Number
Package
NESG220033-A
NESG220033-T1B
Quantity
Supplying Form
3-pin minimold
50 pcs
• 8 mm wide embossed taping
(33 PKG) (Pb-Free)
(Non reel)
• Pin 3 (Collector) face the perforation side
NESG220033-T1B-A
3 kpcs/reel
of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
5.5
V
Collector to Emitter Voltage
VCES
13
V
Collector to Emitter Voltage
VCEO
5.5
V
Note 1
IB
36
mA
Collector Current
IC
200
mA
480
mW
Base Current
Total Power Dissipation
Ptot
Note 2
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Notes 1. Depend on the ESD protect device.
2. Mounted on 3.8 cm × 9.0 cm × 0.8 mm (t) glass epoxy PWB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PU10766EJ03V0DS (3rd edition)
Date Published November 2009 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2009
NESG220033
THERMAL RESISTANCE (TA = +25°C)
Parameter
Termal Resistance from Junction to
Note
Ambient
Symbol
Ratings
Unit
Rthj-a
260
°C/W
Note Mounted on 3.8 cm × 9.0 cm × 0.8 mm (t) glass epoxy PWB
RECOMMENDED OPERATING RANGE (TA = +25°C)
Parameter
<R>
Collector Current
Symbol
MIN.
TYP.
MAX.
Unit
IC
−
40
−
mA
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
−
−
100
nA
Emitter Cut-off Current
IEBO
VEB = 0.4 V, IC = 0 mA
−
−
100
nA
VCE = 5 V, IC = 10 mA
140
180
260
−
VCE = 5 V, IC = 40 mA, f = 1 GHz
−
12.5
−
GHz
⏐S21e⏐
VCE = 5 V, IC = 40 mA, f = 1 GHz
11.0
13.0
−
dB
Noise Figure (1)
NF1
VCE = 5 V, IC = 10 mA, f = 1 GHz,
ZS = ZSopt, ZL = 50 Ω
−
0.75
1.15
dB
Noise Figure (2)
NF2
VCE = 5 V, IC = 40 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
−
0.9
−
dB
Associated Gain (1)
Ga1
VCE = 5 V, IC = 10 mA, f = 1 GHz,
ZS = ZSopt, ZL = 50 Ω
10.0
12.0
−
dB
Associated Gain (2)
Ga2
VCE = 5 V, IC = 40 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
−
13.5
−
dB
VCB = 5 V, IE = 0 mA, f = 1 MHz
−
0.7
0.9
pF
VCE = 5 V, IC = 40 mA, f = 1 GHz
12.0
14.0
−
dB
VCE = 5 V, IC (set) = 40 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
−
21.5
−
dBm
VCE = 5 V, IC (set) = 40 mA, f = 1 GHz,
−
35
−
dBm
DC Current Gain
hFE
Note 1
RF Characteristics
Gain Bandwidth Product
fT
2
Insertion Power Gain
Reverse Transfer Capacitance
Maximum Stable Power Gain
Cre
Note 2
MSG
Note 3
Gain 1 dB Compression Output
Power
PO (1 dB)
Output 3rd Order Intercept Point
OIP3
Δf = 1 MHz, ZS = ZSopt, ZL = ZLopt
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded.
3. MSG =
S21
S12
hFE CLASSIFICATION
2
Rank
FB
Marking
R7B
hFE Value
140 to 260
Data Sheet PU10766EJ03V0DS
NESG220033
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance Cre (pF)
Total Power Dissipation Ptot (mW)
1 000
3.8 cm × 9.0 cm × 0.8 mm (t),
FR–4
500
480
0
25
50
75
100
125
1.1
f = 1 MHz
1.0
0.9
0.8
0.7
0.6
0.5
0
150
2
3
4
5
Ambient Temperature TA (°C)
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
100
VCE = 3 V
VCE = 5 V
10
Collector Current IC (mA)
Collector Current IC (mA)
1
1
0.1
0.01
0.001
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
10
1
0.1
0.01
0.001
0.0001
0.4
Base to Emitter Voltage VBE (V)
0.5
0.6
0.7
0.8
0.9
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Collector Current IC (mA)
200
1 700 μA
1 500 μ A
1 300 μ A
1 100 μ A
150
900 μ A
700 μ A
100
500 μA
300 μ A
50
IB = 100 μA
0
0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10766EJ03V0DS
3
NESG220033
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
1 000
100
10
1
0.1
VCE = 5 V
DC Current Gain hFE
DC Current Gain hFE
VCE = 3 V
1
10
100
10
100
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
1 000
20
VCE = 3 V,
f = 1 GHz
15
10
5
10
100
VCE = 5 V,
f = 1 GHz
15
10
5
0
1
Collector Current IC (mA)
10
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
4
1
Collector Current IC (mA)
Gain Bandwidth Product fT (GHz)
Gain Bandwidth Product fT (GHz)
10
1
0.1
1 000
20
0
1
100
Data Sheet PU10766EJ03V0DS
100
NESG220033
VCE = 3 V,
IC = 10 mA
30
25
MSG
20
MAG
MAG
15
|S21e|
MSG
2
10
5
0
0.1
1
10
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
35
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
VCE = 3 V,
IC = 40 mA
30
25
MSG
MAG
20
MAG
15
MSG
2
|S21e|
10
5
0
0.1
1
10
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
VCE = 5 V,
IC = 10 mA
30
25
MSG
20
MAG
MAG
15
|S21e|
MSG
2
10
5
0
0.1
1
10
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Frequency f (GHz)
35
VCE = 5 V,
IC = 40 mA
30
25
MSG
20
MAG
MAG
MSG
15
2
|S21e|
10
5
0
0.1
1
10
Frequency f (GHz)
Frequency f (GHz)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
VCE = 3 V,
f = 1 GHz
MSG
MAG
15
10
|S21e|2
5
0
1
10
100
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Collector Current IC (mA)
20
VCE = 5 V,
f = 1 GHz
MSG
MAG
15
10
|S21e|2
5
0
1
10
100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10766EJ03V0DS
5
NESG220033
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
3
14
Ga
12
10
8
2
6
1
4
NF
2
0
1
0
100
10
40
VCE = 5 V,
f1 = 1.000 GHz,
f2 = 1.001 GHz
30
20
10
0
1
10
100
Collector Current IC (mA)
OUTPUT POWER, LINEAR GAIN,
COLLECTOR CURRENT vs. INPUT POWER
EACH OUTPUT POWER, IM3
vs. EACH INPUT POWER
20
300
Pout
GL
10
200
0
100
IC
–10
–20
–10
0
0
20
10
Collector Current IC (mA)
400
VCE = 5 V,
IC (set) = 40 mA,
f = 1 GHz
Each Output Power Pout (each) (dBm)
3rd Order Intermodulation Distortion IM3 (dB)
Collector Current IC (mA)
30
Output Power Pout (dBm)
Linear Gain GL (dB)
Output 3rd Order Intercept Point OIP3 (dBm)
16
VCE = 5 V,
f = 1 GHz,
ZS = ZSopt, ZL = 50 Ω
Associated Gain Ga (dB)
Noise Figure NF (dB)
4
OUTPUT 3RD ORDER INTERCEPT POINT
vs. COLLECTOR CURRENT
40
30
20
10
Pout (each)
0
–10
–20
–30
–40
–50
–60
–70
–80
–20
IM3
–10
VCE = 5 V,
IC (set) = 40 mA,
f1 = 1.000 GHz,
f2 = 1.001 GHz
0
10
20
30
Each Input Power Pin (each) (dBm)
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import
of the parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.necel.com/microwave/en/
6
Data Sheet PU10766EJ03V0DS
NESG220033
PACKAGE DIMENSIONS
3-PIN MINIMOLD (33 PKG) (UNIT: mm)
0.65+0.1
–0.15
1
3
0.4+0.1
–0.05
0.95
2
0.95
1.5
R7B
Marking
0 to 0.1
1.1 to 1.4
0.16+0.1
–0.05
0.3
2.9±0.2
0.4+0.1
–0.05
2.8±0.2
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
Data Sheet PU10766EJ03V0DS
7
NESG220033
• The information in this document is current as of November, 2009. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products
and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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M8E0904E
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