ON NID5003NT4G Self-protected fet with temperature and current limit Datasheet

NID5003N
Preferred Device
Self-Protected FET
with Temperature and
Current Limit
42 V, 20 A, Single N−Channel, DPAK
HDPlust devices are an advanced series of power MOSFETs
which utilize ON Semiconductors latest MOSFET technology process
to achieve the lowest possible on−resistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated Drain−to−Gate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate−to−Source Clamp.
Features
•
•
•
•
•
•
Short Circuit Protection/Current Limit
Thermal Shutdown with Automatic Restart
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Slew Rate Control for Low Noise Switching
Overvoltage Clamped Protection
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VDSS
(Clamped)
RDS(on) TYP
ID MAX
(Limited)
42 V
42 m @ 10 V
20 A*
Drain
Gate
Input
RG
Overvoltage
Protection
MPWR
ESD Protection
Temperature
Limit
Current
Limit
Current
Sense
Source
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage Internally Clamped
VDSS
42
Vdc
Gate−to−Source Voltage
VGS
"14
Vdc
Drain Current
Continuous
Total Power Dissipation
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
Thermal Resistance
Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
Single Pulse Drain−to−Source Avalanche
Energy
(VDD = 25 Vdc, VGS = 5.0 Vdc,
IL = 2.6 Apk, L = 120 mH, RG = 25 )
Operating and Storage Temperature Range
(Note 3)
ID
PD
Internally Limited
W
1.3
2.3
RJC
RJA
RJA
3.0
95
54
EAS
400
°C/W
mJ
MARKING
DIAGRAM
D5003N
Y
WW
G
−55 to
150
°C
3
YWW
D
5003NG
1 = Gate
2 = Drain
3 = Source
ORDERING INFORMATION
NID5003NT4
NID5003NT4G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted onto minimum pad size (0.412″ square) FR4 PCB, 1 oz cu.
2. Mounted onto 1″ square pad size (1.127″ square) FR4 PCB, 1 oz cu.
3. Normal pre−fault operating range. See thermal limit range conditions.
2
= Device Code
= Year
= Work Week
= Pb−Free Device
Device
TJ, Tstg
1
DPAK
CASE 369C
STYLE 2
Package
Shipping†
DPAK
2500/Tape & Reel
DPAK
(Pb−Free)
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
*Max current may be limited below this value
depending on input conditions.
© Semiconductor Components Industries, LLC, 2008
September, 2008− Rev. 6
1
Publication Order Number:
NID5003N/D
NID5003N
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
42
40
46
45
51
51
Vdc
−
−
0.6
2.5
5.0
−
−
50
125
Adc
1.0
−
1.7
5.0
2.2
−
Vdc
−mV/°C
−
−
42
76
51
104
−
−
50
88
58
125
VSD
−
0.95
1.1
V
s
OFF CHARACTERISTICS
Drain−to−Source Clamped Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
(VGS = 0 Vdc, ID = 250 Adc, TJ = −40°C to 150°C)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 32 Vdc, VGS = 0 Vdc)
(VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
Gate Input Current
(VGS = 5.0 Vdc, VDS = 0 Vdc)
IGSSF
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 1.2 mAdc)
Threshold Temperature Coefficient
VGS(th)
Static Drain−to−Source On−Resistance (Note 4)
(VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 25°C)
(VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 150°C)
RDS(on)
Static Drain−to−Source On−Resistance (Note 4)
(VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 25°C)
(VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 150°C)
RDS(on)
Source−Drain Forward On Voltage
(IS = 7.0 A, VGS = 0 V)
m
m
SWITCHING CHARACTERISTICS
Turn−on Time
(Vin to 90% ID)
RL = 4.7 Vin = 0 to 10 V, VDD = 12 V
T(on)
−
16
20
Turn−off Time
(Vin to 10% ID)
RL = 4.7 Vin = 0 to 10 V, VDD = 12 V
T(off)
−
80
100
Slew Rate On
RL = 4.7 , Vin = 0 to 10 V, VDD = 12 V
−dVDS/dton
−
1.4
−
Vs
Slew Rate Off
RL = 4.7 , Vin = 10 to 0 V, VDD = 12 V
dVDS/dtoff
−
0.5
−
Vs
Adc
SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5)
Current Limit
(VGS = 5.0 Vdc)
VDS = 10 V (VGS = 5.0 Vdc, TJ = 150°C)
ILIM
12
7
18
13
24
18
Current Limit
(VGS = 10 Vdc)
VDS = 10 V (VGS = 10 Vdc, TJ = 150°C)
ILIM
18
13
22
18
30
25
Temperature Limit (Turn−off)
VGS = 5.0 Vdc
TLIM(off)
150
175
200
°C
Thermal Hysteresis
VGS = 5.0 Vdc
TLIM(on)
−
15
−
°C
Temperature Limit (Turn−off)
VGS = 10 Vdc
TLIM(off)
150
165
185
°C
Thermal Hysteresis
VGS = 10 Vdc
TLIM(on)
−
15
−
°C
4000
400
−
−
−
−
ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Electro−Static Discharge Capability
Human Body Model (HBM)
Machine Model (MM)
ESD
4. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
5. Fault conditions are viewed as beyond the normal operating range of the part.
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2
V
NID5003N
TYPICAL PERFORMANCE CURVES
VGS = 7 V
25
VGS = 10 V
VGS = 6 V
VGS = 8 V
20
15
VGS = 5 V
10
VGS = 4 V
5
VGS = 3 V
TJ = 25°C
0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
ID, DRAIN CURRENT (AMPS)
30
25
Current Limit
Inception Region
VGS = 9 V
0.5
1
1.5
2
3
2.5
3.5
4
4.5
15
25°C
10
100°C
5
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
ID = 5 A
TJ = 25°C
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
3
5
7
8
9
4
6
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
10
1
0.06
VGS = 5 V
0.05
0.045
VGS = 10 V
0.04
0.035
0.03
2
3
4
6
5
7
8
9
10
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100000
ID = 5 A
VGS = 10 V
VGS = 0 V
1.4
TJ = 150°C
10000
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.6
4
TJ = 25°C
0.055
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.8
TJ = −55°C
20
1.5
3.5
3
2
2.5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
1.0
2
VDS ≥ 10 V
0
5
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
ID, DRAIN CURRENT (AMPS)
35
1.2
1.0
0.8
0.6
0.4
1000
TJ = 100°C
100
0.2
0
−50 −30 −10
10
30
50
70
90
110 130 150
10
0
5
10
15
20
25
30
35
40
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
45
NID5003N
TYPICAL PERFORMANCE CURVES
IS, SOURCE CURRENT (AMPS)
10
VGS = 0 V
TJ = 25°C
1
0.1
0.4
0.5
0.6
0.7
0.8
0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 7. Diode Forward Voltage vs. Current
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4
1
NID5003N
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE O
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
−T−
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
3
U
K
F
J
L
H
D
G
2 PL
0.13 (0.005)
M
T
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.63
1.01
0.51
−−−
0.89
1.27
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT
6.20
0.244
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.025 0.040
0.020
−−−
0.035 0.050
0.155
−−−
3.0
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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NID5003N/D
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