NJRC NJG1151MD7 2-way active splitter gaas mmic Datasheet

NJG1151MD7
2-way Active Splitter GaAs MMIC
I GENERAL DESCRIPTION
The NJG1151MD7 is 2-way active splitter with normally loop
through switch GaAs MMIC for STB/Recorder/TV applications.
In order to simplify the tuner structure, the NJG1151MD7 does
not only offer a 2-way active splitter, but also supply loop
through switch for optimize the complicate circuit.
The NJG1151MD7 achieve better characteristics and high
ESD tolerance with less external components.
A small and ultra-thin package of EQFN14-D7 is adopted.
I FEATURES
G Operating frequency
G Package
I PACKAGE OUTLINE
NJG1151MD7
40 to 1000MHz
EQFN14-D7 (Package size: 1.6x1.6x0.397mm typ.)
[ Active mode: Operating voltage
G Operating current
G Gain
G Noise figure
G CSO
G CTB
G Output to output isolation
5.0V ]
100mA typ.
6.0dB typ. (Zs=Zl=50 ohm, Zs=Zl=75 ohm)
2.5dB typ. (Zs=Zl=50 ohm)
60dBc typ. (Zs=Zl=75 ohm, 132ch, +15dBmV)
65dBc typ. (Zs=Zl=75 ohm, 132ch, +15dBmV)
20dB typ. (Zs=Zl=50 ohm, Zs=Zl=75 ohm)
[ Through mode: Operating voltage 0V ]
G Insertion loss
0.4dB typ. (Zs=Zl=50 ohm)
I PIN CONFIGURATION
(Top View)
1pin INDEX
LNAIN
GND
LNAOUT
14
13
12
1
11
GND
GND
2
10
SPLIN
SWOUT1
3
9
splitter
splitter
SWIN1
SPLOUT1
4
GND
8
5
6
7
SWOUT2
SWIN2
SPLOUT2
Pin Connection
1. GND
2. SWOUT1
3. SWIN1
4. GND
5. SWOUT2
6. SWIN2
7. SPLOUT2
Exposed Pad:
8. GND
9. SPLOUT1
10. SPIN1
11. GND
12. LNAOUT
13. GND
14. LNAIN
GND
GND
Note: Specifications and description listed in this datasheet are subject to change without notice.
Ver.2012-06-29
-1-
NJG1151MD7
I ABSOLUTE MAXIMUM RATINGS
T a=+25°C, Zs=Zl=50 ohm / 75 ohm
PARAMETER
SYMBOL
CONDITIONS
RATINGS
UNITS
6.0
V
Drain voltage
VDD
Input power
PIN
VDD=5.0V
+10
dBm
Power dissipation
PD
4-layer FR4 PCB with through-hole
(76.2x114.3mm), Tj=150°C
1300
mW
Operating temperature
Topr
-40~+85
°C
Storage temperature
Tstg
-55~+150
°C
I ELECTRICAL CHARACTERISTICS (DC CHARACTERISTICS)
VDD=5.0V, T a=+25°C, with application circuit1
PARAMETERS
SYMBOL
Operating voltage
VDD
Operating current
IDD
-2-
CONDITIONS
RF OFF
MIN
TYP
MAX
UNITS
2.4
5.0
5.5
V
-
100
140
mA
NJG1151MD7
I ELECTRICAL CHARACTERISTICS2 (RF CHARACTERISTICS: Active mode, 50 ohm)
VDD=5.0V, freq=40 to 1000MHz, T a=+25°C, ZS=Zl=50ohm, with application circuit1
PARAMETERS
SYMBOL
Small signal gain1_1
Gain1_1
Small signal gain1_2
Gain1_2
Gain Flatness1_1
Gflat1_1
Gain Flatness1_2
Gflat1_2
Noise figure1
NF1
Input power 1dB
compression1
P-1dB(IN)1
Input 3rd order
intercept point1
IIP3_1
2nd order
intermodulation
distortion1
IM2_1
3rd order
intermodulation
distortion1
IM3_1
Reverse Isolation1
Output to Output
Isolation1
ISL1
OISL1
CONDITIONS
MIN
TYP
MAX
UNITS
4.0
6.0
8.0
dB
4.0
6.0
9.0
dB
-
1.0
2.0
dB
-
1.0
3.0
dB
-
2.5
3.7
dB
+1.0
+7.0
-
dBm
+10.0
+20.0
-
dBm
37.0
52.0
-
dB
49.0
60.0
-
dB
20.0
28.0
-
dB
RF OUT1 to RF OUT2
18.0
20.0
-
dB
Exclude PCB
& connector losses (Note1)
freq=40 to 900MHz
Exclude PCB
& connector losses (Note1)
freq=40 to 1000MHz
Exclude PCB
& connector losses (Note1)
freq=40 to 900MHz
Exclude PCB
& connector losses (Note1)
freq=40 to 1000MHz
Exclude PCB
& connector losses (Note2)
f1=freq, f2=freq+100kHz,
PIN=-12dBm
f1=40.75MHz,
f2=813.25MHz,
fmeas=854MHz,
PIN1=P IN2=-8dBm
f1=893.25MHz,
f2=873.25MHz,
fmeas=853.25MHz,
PIN1=P IN2=-8dBm
RF OUT1 to RF IN
RF OUT2 to RF IN
RF IN Return loss1
RLi1
RF IN port
8.0
15.0
-
dB
RF OUT Return loss1
RLo1
RF OUT1, RF OUT2 port
13.0
20.0
-
dB
(Note1) Input and output PCB, connector losses (RFIN-RFOUT1): 0.02dB(40MHz), 0.16dB(1000MHz)
Input and output PCB, connector losses (RFIN-RFOUT2): 0.02dB(40MHz), 0.15dB(1000MHz)
(Note2) Input PCB and connector losses: 0.01dB(40MHz), 0.06dB(1000MHz)
-3-
NJG1151MD7
I ELECTRICAL CHARACTERISTICS3 (RF CHARACTERISTICS: Through mode, 50 ohm)
VDD=0V, freq=40 to 1000MHz, T a=+25°C, ZS=Zl=50ohm, with application circuit1
PARAMETERS
Insertion Loss2
Input power 1dB
Compression2
2nd order
intermodulation
distortion2
3rd order
intermodulation
distortion2
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Loss2
Exclude PCB
& connector losses (Note1)
-
0.4
2.0
dB
+1.0
+10.0
-
dBm
50.0
65.0
-
dB
53.0
70.0
-
dB
P-1dB(IN)2
IM2_2
IM3_2
f1=90MHz, f2=100MHz,
fmeas=190MHz,
PIN1=P IN2=-5dBm
f1=200MHz, f2=210MHz,
fmeas=220MHz,
PIN1=P IN2=-5dBm
RF IN Return loss2
RLi2
RF IN port
8.0
15.0
-
dB
RF OUT Return loss2
RLo2
RF OUT2 port
8.0
15.0
-
dB
(Note1) Input and output PCB, connector losses (RFIN-RFOUT2): 0.02dB(40MHz), 0.15dB(1000MHz)
-4-
NJG1151MD7
I ELECTRICAL CHARACTERISTICS4 (RF CHARACTERISTICS: Active mode, 75 ohm)
VDD=5.0V, freq=40 to 1000MHz, T a=+25°C, ZS=Zl=75 ohm, with application circuit1
PARAMETERS
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Small signal gain3
(75 ohm)
Gain3
Exclude PCB
& connector losses
-
6.0
-
dB
Composite Second
Order3
CSO3
132channels, CW,
PIN=+15dBmV
-
60.0
-
dBc
Composite Triple
Beat 3
CTB3
132channels, CW,
PIN=+15dBmV
-
65.0
-
dBc
Reverse Isolation3
ISL3
RF OUT1 to RF IN
RF OUT2 to RF IN
28.0
dB
RF OUT1 to RF OUT2
20.0
dB
Output to Output
Isolation3
OISL3
RF IN Return loss3
(75 ohm)
RLi3
RF IN port
-
15.0
-
dB
RF OUT Return loss3
(75 ohm)
RLo3
RF OUT1, RF OUT2 port
-
25.0
-
dB
I ELECTRICAL CHARACTERISTICS5 (RF CHARACTERISTICS: Through mode, 75 ohm)
VDD=0V, freq=40 to 1000MHz, T a=+25°C, ZS=Zl=75 ohm, with application circuit1
PARAMETERS
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Insertion Loss4
(75 ohm)
Loss4
Exclude PCB
& connector losses
-
1.0
-
dB
Composite Second
Order4
CSO4
132channels, CW,
PIN=+15dBmV
-
55.0
-
dBc
Composite Triple
Beat4
CTB4
132channels, CW,
PIN=+15dBmV
-
60.0
-
dBc
RF IN Return loss4
(75 ohm)
RLi4
RF IN port
-
15.0
-
dB
RF OUT Return loss4
(75 ohm)
RLo4
RF OUT1, RF OUT2 port
-
15.0
-
dB
-5-
NJG1151MD7
I TERMINAL DESCRIPTION
Pin No.
SYMBOL
DESCRIPTION
1
GND
Ground terminal.
This terminal should be connected to the ground plane as close as possible
for excellent RF performance.
2
RF signal output terminal of the switch.
SWOUT1 RF signal is output through the external circuit.
Please connect the DC blocking capacitor of the application circuit.
3
SWIN1
4
GND
5
6
7
8
9
Ground terminal.
This terminal should be connected to the ground plane as close as possible
for excellent RF performance.
RF signal output terminal of the switch.
SWOUT2 RF signal is output through the external circuit.
Please connect the DC blocking capacitor of the application circuit.
SWIN2
RF signal input terminal of the switch.
RF signal is input through the external circuit.
Please connect the DC blocking capacitor of the application circuit.
SPLOUT2 RF signal output terminal of the splitter.
GND
Ground terminal.
This terminal should be connected to the ground plane as close as possible
for excellent RF performance.
SPLOUT1 RF signal output terminal of the splitter.
10
SPLIN
11
GND
12
LNAOUT
13
GND
14
LNAIN
Exposed
Pad
GND
-6-
RF signal input terminal of the switch.
RF signal is input through the external circuit.
Please connect the DC blocking capacitor of the application circuit.
RF signal input terminal of the splitter.
Ground terminal.
This terminal should be connected to the ground plane as close as possible
for excellent RF performance.
RF signal output terminal of the LNA.
RF signal is output through the external circuit.
This terminal is also a voltage supply terminal of the switch and LNA,
Please supply the voltage through an inductor of the application circuit.
Ground terminal.
This terminal should be connected to the ground plane as close as possible
for excellent RF performance.
RF signal input terminal of the LNA.
RF signal is input through the external circuit.
This terminal is also a current adjustment terminal of the LNA,
Please connect to ground via a resistor of the application circuit.
Ground terminal.
NJG1151MD7
I ELECTRICAL CHARACTERISTICS (Active mode, 50 ohm)
Conditions: VDD=5.0V, Ta=25°C, Zs=Zl=50 ohm, with application circuit1
Gain, NF vs. frequency
Gain, NF vs. frequency
(freq=20~1500MHz, RF IN to RF OUT1)
(freq=20~1500MHz, RF IN to RF OUT2)
7
8
6
6
6
6
4
5
4
5
2
4
2
4
3
0
7
Gain
3
0
NF
NF
2
-2
2
-2
(Exclude PCB, Connector Losses)
0
500
(Exclude PCB, Connector Losses)
1
1500
-4
1000
0
500
Pout vs. Pin
Pout vs. Pin
(freq=620MHz, RF IN to RF OUT1)
(freq=620MHz, RF IN to RF OUT2)
20
10
10
Pout (dBm)
Pout (dBm)
1000
frequency (MHz)
20
0
-10
0
-10
Pout
Pout
-20
-20
P-1dB(IN)=+8.4dBm
-30
-20
-10
0
P-1dB(IN)=+8.6dBm
10
-30
-20
0
Gain, IDD vs. Pin
(freq=620MHz, RF IN to RF OUT1)
Gain, IDD vs. Pin
(freq=620MHz, RF IN to RF OUT2)
160
8
140
6
120
IDD
2
100
0
80
Gain (dB)
Gain
4
Gain
140
120
4
IDD
2
100
0
80
P-1dB(IN)=+8.6dBm
60
-30
-20
-10
Pin (dBm)
0
10
160
P-1dB(IN)=+8.4dBm
-2
-40
-10
Pin (dBm)
IDD (mA)
Gain (dB)
-30
-40
Pin (dBm)
8
6
1
1500
-4
frequency (MHz)
-30
-40
NF (dB)
Gain
8
IDD (mA)
Gain (dB)
8
Gain (dB)
10
NF (dB)
8
10
10
-2
-40
60
-30
-20
-10
0
10
Pin (dBm)
-7-
NJG1151MD7
I ELECTRICAL CHARACTERISTICS (Active mode, 50 ohm)
Conditions: VDD=5.0V, Ta=25°C, Zs=Zl=50 ohm, with application circuit1
P-1dB(IN) vs. frequency
(freq=40~1000MHz, RF IN to RF OUT2)
15
10
P-1dB(IN) (dBm)
P-1dB(IN) (dBm)
15
P-1dB(IN) vs. frequency
(freq=40~1000MHz, RF IN to RF OUT1)
5
0
-5
10
5
0
-5
0
200
400
600
800
1000
0
200
400
frequency (MHz)
800
Pout, IM3 vs. Pin
Pout, IM3 vs. Pin
(f1=620MHz, f2=f1+100kHz, RF IN to RF OUT1)
(f1=620MHz, f2=f1+100kHz, RF IN to RF OUT2)
40
1000
40
OIP3=+26.1dBm
OIP3=+26.0dBm
20
20
0
-20
IM3
-40
Pout
Pout, IM3 (dBm)
Pout
Pout, IM3 (dBm)
600
frequency (MHz)
0
-20
IM3
-40
-60
-60
IIP3=+20.4dBm
-80
-30
-20
-10
0
10
20
IIP3=+20.7dBm
-80
-30
30
-20
Pin (dBm)
-10
0
10
20
30
Pin (dBm)
IIP3, OIP3 vs. frequency
IIP3, OIP3 vs. frequency
(f1=40~1000MHz, f2=f1+100kHz, Pin=-12dBm, RF IN to RF OUT1)
30
(f1=40~1000MHz, f2=f1+100kHz, Pin=-12dBm, RF IN to RF OUT2)
30
OIP3
20
IIP3
15
10
20
IIP3
15
10
5
5
0
200
400
600
frequency (MHz)
-8-
OIP3
25
IIP3, OIP3 (dBm)
IIP3, OIP3 (dBm)
25
800
1000
0
200
400
600
frequency (MHz)
800
1000
NJG1151MD7
I ELECTRICAL CHARACTERISTICS (Active mode, 50 ohm)
Conditions: VDD=5.0V, Ta=25°C, Zs=Zl=50 ohm, with application circuit1
RF IN Return Loss vs. frequency
0
(freq=20~1500MHz)
0
5
5
10
10
15
15
RLo (dB)
RLi (dB)
RF OUT Return Loss vs. frequency
(freq=20~1500MHz)
20
25
RF OUT2
20
25
RF OUT1
30
30
35
35
40
40
0
1000
1500
0
Output to Output Isolation vs. frequency
(freq=20~1500MHz)
0
10
OISL (dB)
10
15
20
RF OUT1 to RF IN
30
15
RF OUT1 to RF OUT2
20
25
30
RF OUT2 to RF OUT1
35
RF OUT2 to RF IN
40
40
0
500
1000
1500
0
1000
1500
frequency (MHz)
Reverse Isolation vs. frequency
Output to Output Isolation vs. frequency
(freq=20~1500MHz)
0
5
5
10
10
OISL (dB)
15
20
25
500
frequency (MHz)
(freq=20~1500MHz)
0
ISL (dB)
1500
Reverse Isolation vs. frequency
5
35
1000
frequency (MHz)
5
25
500
frequency (MHz)
(freq=20~1500MHz)
0
ISL (dB)
500
RF OUT1 to RF IN
15
RF OUT1 to RF OUT2
20
25
30
30
35
35
RF OUT2 to RF IN
40
RF OUT2 to RF OUT1
40
0
500
1000
frequency (MHz)
1500
0
500
1000
1500
frequency (MHz)
-9-
NJG1151MD7
I ELECTRICAL CHARACTERISTICS (Active mode, 50 ohm)
Conditions: VDD=5.0V, Ta=25°C, Zs=Zl=50 ohm, with application circuit1
- 10 -
S11, S22 (RF OUT1)
S11, S22 (RF OUT2)
S21, S12 (RF OUT1)
S21, S12 (RF OUT2)
Zin, Zout (RF OUT1)
Zin, Zout (RF OUT2)
NJG1151MD7
I ELECTRICAL CHARACTERISTICS (Active mode, 50 ohm)
Conditions: VDD=5.0V, Ta=25°C, Zs=Zl=50 ohm, with application circuit1
VSWRi, VSWRo (RF OUT1)
VSWRi, VSWRo (RF OUT2)
S11, S22 (50MHz~20GHz, RF OUT1)
S11, S22 (50MHz~20GHz, RF OUT2)
S21, S12 (50MHz~20GHz, RF OUT1)
S21, S12 (50MHz~20GHz, RF OUT2)
- 11 -
NJG1151MD7
I ELECTRICAL CHARACTERISTICS (Active mode, 50 ohm)
Conditions: Ta=25°C, Zs=Zl=50 ohm, with application circuit1
Gain vs. VDD
NF vs. VDD
(freq=620MHz)
10
(freq=620MHz)
6
8
5
RF IN to RF OUT1
RF IN to RF OUT2
4
NF (dB)
Gain (dB)
6
2
4
3
RF IN to RF OUT1
0
2
RF IN to RF OUT2
-2
(Exclude PCB, connector Losses)
-4
2.0
2.5
3.0
4.5
5.0
5.5
6.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
VDD (V)
P-1dB(IN) vs. VDD
IIP3 vs. VDD
(f1=620MHz, f2=620.1MHz, Pin=-12dBm)
(freq=620MHz)
30
RF IN to RF OUT2
6.0
25
6
RF IN to RF OUT1
RF IN to RF OUT1
IIP3 (dBm)
P-1dB(IN) (dBm)
4.0
VDD (V)
10
8
3.5
(Exclude PCB, connector Losses)
1
2.0
4
2
20
RF IN to RF OUT2
15
0
10
-2
-4
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
5
2.0
6.0
2.5
3.0
3.5
4.0
IM2 vs. VDD
(f1=40.75MHz, f2=813.25MHz, fmeas=854MHz, Pin=-8dBm)
60
5.0
5.5
6.0
IM3 vs. VDD
(f1=893.25MHz, f2=873.25MHz, fmeas=853.25MHz, Pin=-8dBm)
70
RF IN to RF OUT2
55
4.5
VDD (V)
VDD (V)
RF IN to RF OUT2
60
RF IN to RF OUT1
45
RF IN to RF OUT1
IM3 (dB)
IM2 (dB)
50
40
35
50
40
30
30
25
20
2.0
2.5
3.0
3.5
4.0
VDD (V)
- 12 -
4.5
5.0
5.5
6.0
20
2.0
2.5
3.0
3.5
4.0
VDD (V)
4.5
5.0
5.5
6.0
NJG1151MD7
I ELECTRICAL CHARACTERISTICS (Active mode, 50 ohm)
Conditions: Ta=25°C, Zs=Zl=50 ohm, with application circuit1
RF IN Return Loss vs. VDD
RF OUT Return Loss vs. VDD
(freq=620MHz)
0
10
RLo (dB)
RLi (dB)
10
20
30
40
50
2.0
20
RF OUT1
RF OUT2
30
40
2.5
3.0
3.5
4.0
4.5
5.0
5.5
50
2.0
6.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
VDD (V)
VDD (V)
Reverse Isolation vs. VDD
Output to Output Isolation vs. VDD
(freq=620MHz)
0
6.0
(freq=620MHz)
0
10
OISL (dB)
10
ISL (dB)
(freq=620MHz)
0
20
RF OUT1 to RF IN
30
RF OUT1 to RF OUT2
20
30
RF OUT2 to RF OUT1
RF OUT2 to RF IN
40
40
50
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
50
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
VDD (V)
VDD (V)
IDD vs. VDD
(RF OFF)
200
IDD (mA)
150
100
50
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
VDD (V)
- 13 -
NJG1151MD7
I ELECTRICAL CHARACTERISTICS (Active mode, 50 ohm)
Conditions: Ta=25°C, Zs=Zl=50 ohm, with application circuit1
K factor vs. frequency
K factor vs. frequency
20
(freq=50MHz~20GHz, RF IN to RF OUT1)
20
15
K factor
15
K factor
(freq=50MHz~20GHz, RF IN to RF OUT2)
10
10
VDD=2.5V
VDD=2.5V
5
5
VDD=5.0V
VDD=5.0V
VDD=6.0V
VDD=6.0V
0
0.0
5.0
10
frequency (GHz)
- 14 -
15
20
0
0.0
5.0
10
frequency (GHz)
15
20
NJG1151MD7
I ELECTRICAL CHARACTERISTICS (Active mode, 50 ohm)
Conditions: VDD=5.0V, Zs=Zl=50 ohm, with application circuit1
Gain vs. Temperature
NF vs. Temperature
(freq=620MHz)
10
(freq=620MHz)
6
8
5
RF IN to RF OUT1
RF IN to RF OUT2
4
NF (dB)
Gain (dB)
6
2
4
RF IN to RF OUT2
3
RF IN to RF OUT1
0
2
-2
(Exclude PCB, connector Losses)
-4
-40
-20
0
20
40
60
80
(Exclude PCB, connector Losses)
1
-40
100
-20
0
Temperature ( oC)
20
40
60
80
P-1dB(IN) vs. Temperature
IIP3 vs. Temperature
(freq=620MHz)
(f1=620MHz, f2=620.1MHz, Pin=-12dBm)
10
100
Temperature ( oC)
30
RF IN to RF OUT2
25
RF IN to RF OUT1
RF IN to RF OUT2
IIP3 (dBm)
P-1dB(IN) (dBm)
8
6
4
2
0
-40
20
RF IN to RF OUT1
15
10
-20
0
20
40
60
80
5
-40
100
-20
0
Temperature ( oC)
20
IM2 vs. Temperature
60
80
100
IM3 vs. Temperature
(f1=40.75MHz, f2=813.25MHz, fmeas=854MHz, Pin=-8dBm)
60
(f1=893.25MHz, f2=873.25MHz, fmeas=853.25MHz, Pin=-8dBm)
70
55
65
RF IN to RF OUT1
50
RF IN to RF OUT2
60
RF IN to RF OUT2
RF IN to RF OUT1
45
IM3 (dB)
IM2 (dB)
40
Temperature ( oC)
40
35
55
50
45
30
40
25
35
20
-40
-20
0
20
40
60
o
Temperature ( C)
80
100
30
-40
-20
0
20
40
60
80
100
o
Temperature ( C)
- 15 -
NJG1151MD7
I ELECTRICAL CHARACTERISTICS (Active mode, 50 ohm)
Conditions: VDD=5.0V, Zs=Zl=50 ohm, with application circuit1
RF IN Return Loss vs. Temperature
RF OUT Return Loss vs. Temperature
(freq=620MHz)
0
10
RLo (dB)
10
RLi (dB)
(freq=620MHz)
0
20
30
20
RF OUT2
30
RF OUT1
40
50
-40
40
-20
0
20
40
60
80
50
-40
100
0
20
40
60
80
100
Temperature ( oC)
Reverse Isolation vs. Temperature
Output to Output Isolation vs. Temperature
(freq=620MHz)
0
(freq=620MHz)
0
10
10
OISL (dB)
ISL (dB)
-20
Temperature ( oC)
20
RF OUT1 to RF IN
30
RF OUT1 to RF OUT2
20
30
RF OUT2 to RF OUT1
RF OUT2 to RF IN
40
50
-40
40
-20
0
20
40
60
80
100
Temperature ( oC)
(RF OFF)
IDD (mA)
150
100
50
0
-40
-20
0
20
40
60
Temperature ( oC)
- 16 -
-20
0
20
40
60
Temperature ( oC)
IDD vs. Temperature
200
50
-40
80
100
80
100
NJG1151MD7
I ELECTRICAL CHARACTERISTICS (Active mode, 50 ohm)
Conditions: VDD=5.0V, Zs=Zl=50 ohm, with application circuit1
20
K factor vs. frequency
K factor vs. frequency
(freq=50MHz~20GHz, RF IN to RF OUT1)
(freq=50MHz~20GHz, RF IN to RF OUT2)
20
15
K factor
K factor
15
10
o
-40 C
5
10
o
-40 C
5
o
o
+25 C
+25 C
o
o
+85 C
+85 C
0
0.0
5.0
10
frequency (GHz)
15
20
0
0.0
5.0
10
15
20
frequency (GHz)
- 17 -
NJG1151MD7
I ELECTRICAL CHARACTERISTICS (Through mode, 50 ohm)
Conditions: VDD=0V, Ta=25°C, Zs=Zl=50 ohm, with application circuit1
0
Insertion Loss vs. frequency
Pout vs. Pin
(freq=20~1500MHz,RF IN to RF OUT2)
(freq=620MHz, RF IN to RF OUT2)
20
10
Pout (dBm)
Loss (dB)
1
2
3
4
0
-10
Pout
-20
(Exclude PCB, connector Losses)
5
0
500
1000
1500
P-1dB(IN)=+10.0dBm
-30
-30
-20
-10
frequency (MHz)
0
10
20
Pin (dBm)
Loss vs. Pin
P-1dB(IN) vs. frequency
(freq=620MHz, RF IN to RF OUT2)
(freq=40~1000MHz, RF IN to RF OUT2)
20
0
Loss
P-1dB(IN) (dBm)
Loss (dB)
2
4
6
15
10
5
8
P-1dB(IN)=+10.0dBm
10
-30
0
-20
-10
0
10
0
20
Pin (dBm)
800
1000
(freq=20~1500MHz)
0
5
10
10
15
15
RLo (dB)
RLi (dB)
600
RF OUT2 Return Loss vs. frequency
(freq=20~1500MHz)
5
20
25
20
25
30
30
35
35
40
40
0
500
1000
frequency (MHz)
- 18 -
400
frequency (MHz)
RF IN Return Loss vs. frequency
0
200
1500
0
500
1000
frequency (MHz)
1500
NJG1151MD7
I ELECTRICAL CHARACTERISTICS (Through mode, 50 ohm)
Conditions: VDD=0V, Ta=25°C, Zs=Zl=50 ohm, with application circuit1
S11, S22
S21, S12
Zin, Zout
VSWRi, VSWRo
S11, S22 (50MHz~20GHz)
S21, S21 (50MHz~20GHz)
- 19 -
NJG1151MD7
I ELECTRICAL CHARACTERISTICS (Through mode, 50 ohm)
Conditions: VDD=0V, Zs=Zl=50 ohm, with application circuit1
P-1dB(IN) vs. Temperature
Insertion Loss vs. Temperature
(freq=620MHz)
0
P-1dB(IN) (dBm)
1
Loss (dB)
(freq=620MHz)
20
2
3
15
10
5
4
5
-40
-20
0
20
40
60
80
0
-40
100
-20
0
Temperature ( C)
80
20
40
60
80
100
Temperature ( oC)
o
IM2 vs. Temperature
IM3 vs. Temperature
(f1=90MHz, f2=100MHz, fmeas=190MHz, Pin=-5dBm)
(f1=200MHz, f2=210MHz, fmeas=220MHz, Pin=-5dBm)
100
75
90
70
IM3 (dB)
IM2 (dB)
80
65
60
55
70
60
50
50
45
40
-40
-20
0
20
40
60
80
40
-40
100
40
60
80
100
RF OUT Return Loss vs. Temperature
(freq=620MHz)
(freq=620MHz)
0
10
RLo (dB)
RLi (dB)
20
RF IN Return Loss vs. Temperature
10
20
30
40
20
30
40
-20
0
20
40
60
Temperature ( oC)
- 20 -
0
Temperature ( oC)
0
50
-40
-20
Temperature ( oC)
80
100
50
-40
-20
0
20
40
60
Temperature ( oC)
80
100
NJG1151MD7
I ELECTRICAL CHARACTERISTICS (Active mode, 75 ohm)
Conditions: VDD=5.0V, Ta=25°C, Zs=Zl=75 ohm, with application circuit1
Gain vs. frequency
(freq=20~1500MHz, RF IN to RF OUT2, Zs=Zl=75ohm)
10
8
8
6
6
Gain (dB)
Gain (dB)
10
Gain vs. frequency
(freq=20~1500MHz, RF IN to RF OUT1, Zs=Zl=75ohm)
4
2
4
2
0
0
-2
-2
(Exclude PCB, connector Losses)
(Exclude PCB, connector Losses)
-4
-4
0
500
1000
0
1500
1000
1500
frequency (MHz)
RF IN Return Loss vs. frequency
RF OUT Return Loss vs. frequency
(freq=20~1500MHz, Zs=Zl=75ohm)
0
500
frequency (MHz)
(freq=20~1500MHz, Zs=Zl=75ohm)
0
5
5
10
10
15
15
RLo (dB)
RLi (dB)
RF OUT1
20
25
RF OUT2
25
30
30
35
35
40
40
0
500
1000
1500
0
1000
1500
frequency (MHz)
Reverse Isolation vs. frequency
Output to Output Isolation vs. frequency
(freq=20~1500MHz, Zs=Zl=75ohm)
0
5
10
10
OISL (dB)
5
15
20
25
500
frequency (MHz)
(freq=20~1500MHz, Zs=Zl=75ohm)
0
ISL (dB)
20
RF OUT1 to RF IN
15
RF OUT1 to RF OUT2
20
25
30
30
35
35
RF OUT2 to RF IN
40
RF OUT2 to RF OUT1
40
0
500
1000
frequency (MHz)
1500
0
500
1000
1500
frequency (MHz)
- 21 -
NJG1151MD7
I ELECTRICAL CHARACTERISTICS (Active mode, 75 ohm)
Conditions: Ta=25°C, Zs=Zl=75 ohm, with application circuit1
Gain vs. VDD
(freq=620MHz, Zs=Zl=75ohm)
10
8
RF IN to RF OUT1
Gain (dB)
6
4
RF IN to RF OUT2
2
0
-2
(Exclude PCB, connector Losses)
-4
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
VDD (V)
RF IN Return Loss vs. VDD
RF OUT Return Loss vs. VDD
(freq=620MHz, Zs=Zl=75ohm)
0
(freq=620MHz, Zs=Zl=75ohm)
0
10
10
RLo (dB)
RLi (dB)
RF OUT2
20
30
40
50
2.0
RF OUT1
30
40
2.5
3.0
3.5
4.0
4.5
5.0
5.5
50
2.0
6.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
VDD (V)
VDD (V)
Reverse Isolation vs. VDD
Output to Output Isolation vs. VDD
(freq=620MHz, Zs=Zl=75ohm)
0
6.0
(freq=620MHz, Zs=Zl=75ohm)
0
10
10
OISL (dB)
ISL (dB)
20
20
RF OUT1 to RF IN
30
RF OUT1 to RF OUT2
20
30
RF OUT2 to RF OUT1
RF OUT2 to RF IN
40
50
2.0
40
2.5
3.0
3.5
4.0
VDD (V)
- 22 -
4.5
5.0
5.5
6.0
50
2.0
2.5
3.0
3.5
4.0
VDD (V)
4.5
5.0
5.5
6.0
NJG1151MD7
I ELECTRICAL CHARACTERISTICS (Active mode, 75 ohm)
Conditions: VDD=5.0V, Zs=Zl=75 ohm, with application circuit1
Gain vs. Temperature
(freq=620MHz, Zs=Zl=75ohm)
10
8
RF IN to RF OUT1
Gain (dB)
6
4
RF IN to RF OUT2
2
0
-2
(Exclude PCB, connector Losses)
-4
-40
-20
0
20
40
60
80
100
Temperature ( oC)
RF OUT Return Loss vs. Temperature
RF IN Return Loss vs. Temperature
(freq=620MHz, Zs=Zl=75ohm)
0
10
RLo (dB)
RLi (dB)
10
20
30
-20
RF OUT1
30
0
20
40
60
80
50
-40
100
-20
0
20
40
60
80
100
Temperature ( oC)
Temperature ( oC)
Reverse Isolation vs. Temperature
Output to Output Isolation vs. Temperature
(freq=620MHz, Zs=Zl=75ohm)
0
(freq=620MHz, Zs=Zl=75ohm)
0
10
OISL (dB)
10
ISL (dB)
20
RF OUT2
40
40
50
-40
(freq=620MHz, Zs=Zl=75ohm)
0
20
RF OUT1 to RF IN
30
RF OUT1 to RF OUT2
20
30
RF OUT2 to RF OUT1
RF OUT2 to RF IN
40
50
-40
40
-20
0
20
40
60
Temperature ( oC)
80
100
50
-40
-20
0
20
40
60
80
100
Temperature ( oC)
- 23 -
NJG1151MD7
I ELECTRICAL CHARACTERISTICS (Through mode, 75 ohm)
Conditions: VDD=0V, Ta=25°C, Zs=Zl=75 ohm, with application circuit1
Insertion Loss vs. frequency
RF IN Return Loss vs. frequency
(freq=20~1500MHz,RF IN to RF OUT2, Zs=Zl=75ohm)
0
(freq=20~1500MHz, Zs=Zl=75ohm)
0
5
1
2
RLi (dB)
Loss (dB)
10
3
15
20
25
30
4
35
(Exclude PCB, connector Losses)
5
40
0
500
1000
1500
0
500
1000
1500
frequency (MHz)
frequency (MHz)
RF OUT2 Return Loss vs. frequency
Insertion Loss vs. Temperature
(freq=20~1500MHz, Zs=Zl=75ohm)
0
(freq=620MHz, Zs=Zl=75ohm)
0
5
1
Loss (dB)
RLo (dB)
10
15
20
25
2
3
30
4
35
40
0
500
1000
5
-40
1500
-20
0
RF IN Return Loss vs. Temperature
RLo (dB)
RLi (dB)
80
100
10
20
30
40
20
30
40
-20
0
20
40
60
o
Temperature ( C)
- 24 -
60
(freq=620MHz, Zs=Zl=75ohm)
0
10
50
-40
40
RF OUT Return Loss vs. Temperature
(freq=620MHz, Zs=Zl=75ohm)
0
20
Temperature ( oC)
frequency (MHz)
80
100
50
-40
-20
0
20
40
60
o
Temperature ( C)
80
100
NJG1151MD7
I APPLICATION CIRCUIT1: with through SW
V DD
(Top View)
L2
10n
C2
0.01u
C8
1.5p
L4
27n
R1
470
R4
56k
14
LNAIN
L1
470n
R3
1k
C3
0.01u
1
1Pin INDEX
C5
0.01u
C4
0.01u
L3
2.2n
13
12
GND
LNAOUT
GND
2
10
SW OUT1
RF IN
SPLIN
3
C1
0.01u
RF OUT1
9
splitter
SW IN1
SPLOUT1
4
GND
11
GND
8
5
SW OUT2
C7
0.01u
6
7
SW IN2
SPLOUT2
GND
C6
0.01u
RF OUT2
Parts List
Parts ID
Manufacture
L1
TAIYO-YUDEN HK1608 Series
L2~L4
TAIYO-YUDEN HK1005 Series
C1~C8
MURATA GRM15 Series
R1, R3, R4
KOA RK73 Series
I FUNCTION STATE TABLE1
Application circuit1: with through SW
VDD
LNA
Loop through SW
0V
OFF
ON
5.0V
ON
OFF
RF IN to RF OUT1
RF IN to RF OUT2
Isolate mode
(-28dB)
Active mode
(6dB)
Through mode
(-0.4dB)
Active mode
(5.6dB)
- 25 -
NJG1151MD7
I TEST PCB LAYOUT
(Top View)
RF OUT1
VDD
C3
R1
R4
C8
RF IN
L2
C5
R3
L1
L4
L3
C4
C2
C1
C7
C6
1Pin INDEX
PCB: FR-4, t=0.2mm
Microstrip line width: 0.4mm
PCB size: 16.7mm x 19.1mm
RF OUT2
PRECAUTIONS
- C1~C4, C6 and C7 are DC-Blocking capacitors, and C5 is a bypass capacitor.
- L1 is RF choke inductor. (DC feed inductor)
- R4 is the resistance to adjust the operating current.
- L2~L4, R1, R3 and C8 are negative feedback circuit and impedance matching.
- All external parts, please be placed as close to the IC.
- The backside exposed pad, because it is used to heat dissipation, please grounded via a through-hole near the IC.
- 26 -
NJG1151MD7
I RECOMMENDED FOOTPRINT PATTERN (EQFN14-D7 PACKAGE Reference)
: Land
: Mask (Open area)
*Metal mask thickness: 100um
PKG:
1.6mm x 1.6mm
Pin pitch: 0.4mm
: Resist (Open area)
Detail A
- 27 -
NJG1151MD7
I APPLICATION CIRCUIT2: without through SW
V DD
(Top View)
C8
1.5p
L3
2.2n
14
1
1Pin INDEX
C4
0.01u
L4
27n
R1
470
R4
56k
L1
470n
R3
1k
C3
0.01u
L2
10n
C2
0.01u
C5
0.01u
LNAIN
13
12
GND
LNAOUT
GND
2
10
SW OUT1
RF IN
SPLIN
3
C1
0.01u
SPLOUT1
4
8
5
SW OUT2
Don’t connect
(open)
RF OUT1
9
splitter
SW IN1
GND
11
GND
6
7
SW IN2
SPLOUT2
GND
RF OUT2
Parts List
Parts ID
Manufacture
L1
TAIYO-YUDEN HK1608 Series
L2~L4
TAIYO-YUDEN HK1005 Series
C1~C5, C8
MURATA GRM15 Series
R1, R3, R4
KOA RK73 Series
I FUNCTION STATE TABLE2
Application circuit2: without through SW
VDD
LNA
0V
OFF
5.0V
ON
- 28 -
RF IN to RF OUT1
RF IN to RF OUT2
Isolate mode
(-28dB)
Active mode
(6dB)
Isolate mode
(-28dB)
Active mode
(6dB)
NJG1151MD7
I MEASUREMENT BLOCK DIAGRAM
Measuring instruments
NF Analyzer
: Agilent 8973A
Noise Source
: Agilent 346A
Setting the NF analyzer
Measurement mode form
Device under test
: Amplifier
System downconverter : off
Mode setup form
Sideband
: LSB
Averages
:4
Average mode
: Point
Bandwidth
: 4MHz
Loss comp
: off
Tcold
: setting the temperature of noise source (303K)
NF Analyzer
(Agilent 8973A)
Noise Source
(Agilent 346A)
Preamplifier
NJG1145UA2
Gain=15dB,
NF=1.5dB
Input (50 ohm)
Noise Source
Drive Output
* Noise sauce,
the preamplifier,
and NF analyzer are
connected directly.
Calibration Setup
NF Analyzer
(Agilent 8973A)
Preamplifier
NJG1145UA2
Gain=15dB,
NF=1.5dB
Noise Source
(Agilent 346A)
* Noise sauce, DUT,
IN
DUT
OUT
Input (50 ohm)
Noise Source
Drive Output
the preamplifier,
and NF analyzer are
connected directly.
Measurement Setup
- 29 -
NJG1151MD7
I PACKAGE OUTLINE (EQFN14-D7)
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
• Do NOT eat or put into mouth.
• Do NOT dispose in fire or break up this product.
• Do NOT chemically make gas or powder with this product.
• To waste this product, please obey the relating law of your country.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please
handle with care to avoid these damages.
- 30 -
[CAUTION]
The specifications on this databook are only
given for information, without any guarantee
as regards either mistakes or omissions.
The application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right
including the industrial rights.
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