NKT200A/NKH200A Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Thyristor/Diode and Thyristor/Thyristor, 200A (New INT-A-PAK Power Modules) New INT-A -PAK 23 23 2.8x0.8+0.1 12+1 - 34+2 - 24 2−Ø6.5 15+1 FEATURES 80+1 • High voltage 94+1 3-M6 SCREWS • Electrically isolated by DBC ceramic (AI 2O3) • High surge capability 29+1 - 36+2 - • Industrial standard package 9 7+0.5 • 3500 V RMS isolating voltage • Glass passivated chips 0.8 • Modules uses high voltage power thyristor/diodes in two basic configurations All dimensions in millimeters • Simple mounting • UL approved file E320098 • Compliant to RoHS • Designed and qualified for multiple level NKT NKH + + APPLICATIONS • DC motor control and drives • Battery charges - ~ • Welders - ~ • Power converters • Lighting control ~ + • Heat and temperature control - K2 G2 K1 G1 ~ + K1G1 PRODUCT SUMMARY IT(AV) 200 A MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS 200 A IT(AV) 85 ° C IT(RMS) 85 ° C 314 50 Hz 7200 60 Hz 7560 50 Hz 259 60 Hz 236 ITSM I2t I2√t 2592 A kA2s kA2√s VDRM / VRRM Range 400 to 1600 V TJ Range -40 to 125 ° C www.nellsemi.com Page 1 of 4 - NKT200A/NKH200A Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM /V DRM , MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM /V DSM , MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 04 400 500 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700 NKT200 NKH200 IRRM /I DRM AT 125 ° C mA 30 FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS Maximum average on-state current at case temperature IT(AV) 180° conduction, half sine wave ,50Hz Maximum RMS on-state current lT(RMS) 180° conduction, half sine wave ,50Hz ,TC = 85°C Maximum peak, one-cycle, on-state non-repetitive surge current ITSM I 2t UNITS 200 A 85 °C 314 t = 10 ms 7200 t = 8.3 ms 7560 No voltage reapplied t = 10 ms Maximum I 2t for fusing VALUES t = 8.3 ms Sine half wave, initial TJ = TJ maximum 100%V RRM reapplied t = 10 ms t = 8.3 ms 259 236 165 Maximum I 2√t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 2592 Maximum on-state voltage drop VTM ITM = 480A , TJ = 25 ° C, 180° conduction 1.7 Maximum forward voltage drop VFM IFM = 480A, TJ = 25 ° C, 180° conduction 1.4 Maximum latching current kA2s 181 2√ Maximum holding current A kA2√s V IH Anode supply = 12 V initial I T = 30 A, TJ = 25 ° C IL Anode supply = 12 V resistive load = 1 Ω Gate pulse: 10 V, 100 μs, TJ = 25 ° C 40~150 mA 400 BLOCKING PARAMETER SYMBOL TEST CONDITIONS Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = 125 ° C RMS isolation Voltage VISO 50 Hz, circuit to base, all terminals shorted Critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, exponential to 67 % rated V DRM www.nellsemi.com Page 2 of 4 VALUES UNITS 30 mA 2500 (1min) 3500 (1s) V 500 V/μs NKT200A/NKH200A Series SEMICONDUCTOR RoHS RoHS Nell High Power Products TRIGGERING PARAMETER SYMBOL Maximum peak gate power Maximum average gate power TEST CONDITIONS VALUES PGM t p ≤ 5 ms, TJ = TJ maximum 10 PG(AV) f = 50 Hz, TJ = TJ maximum 3 IGM Maximum peak gate current Maximum peak negative gate voltage - VGT 3 t p ≤ 5 ms, TJ = TJ maximum UNITS W A 10 V Maximum required DC gate voltage to trigger VGT 0.7~1.8 Anode supply = 12 V, resistive load; Ra = 1 Ω TJ = 25 ° C Maximum required DC I GT gate current to trigger Maximum gate voltage that will not trigger VGD Maximum gate current that will not trigger I GD Maximum rate of rise of turned-on current dI/dt 30~150 mA 0.25 V 10 mA 150 A/μs TJ = TJ maximum, 66.7% V DRM applied TJ = 25ºC ,IGM = 1.5A ,tr ≤ 0.5 µs THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating temperature range TEST CONDITIONS VALUES UNITS TJ - 40 to 125 Maximum storage temperature range TStg - 40 to 150 Maximum thermal resistance, junction to ca se per junction RthJC DC operation 0.14 Maximum thermal resistance, case to heatsink per module RthCS Mounting surface, smooth , flat and greased 0.025 A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. 4 to 6 N.m 220 g 7.05 oz. Mounting torque ± 10 % °C ° C/W IAP to heatsink , M6 busbar to IAP , M6 Approximate weight New INT-A-PAK Case style ORDERING INFORMATION TABLE Device code www.nellsemi.com NKT 200 1 2 / 16 A 3 4 1 - Module type: NKT for (Thyristor + Thyristor) module NKH for (Thyristor + Diode) module 2 - Current rating: IT(AV) 3 - Voltage code x 100 = V RRM 4 - Assembly type,”A” for soldering type Page 3 of 4 NKT200A/NKH200A Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.1 On-state current vs. voltage characteristic 0.15 Transient thermal impedance (° C/W) 4 3.5 T J = 125 ° C 3 2.5 2 1.5 1 0.5 100 1000 0.12 0.09 0.06 0.03 0 0.001 10000 0.01 0.1 On-state current (A) Time (s) Fig.4 Case temperature vs. on-state average current Fig.3 Power consumption vs. average current 140 180° 500 90° 180 0 120° ase temperature (° C) Maximum power consumption (W) 600 60° 400 Conduction Angle 30° 300 200 120 Conduction Angle 80 60 40 20 0 0 50 100 150 200 250 180 0 100 100 0 30° 0 300 100 On-state average current (A) 60° 120° 90° 200 180° 300 400 On-state average current (A) 2 Fig.5 On-state surge current vs cycles Fig.6 I t characteristics 8 2 7 10 1 6 5 2 1000A S On-state surge current (KA) 10 1 5 4 Peak Forward Gate Voltage (10V) Pe Po ak Av we Ga e r ( te Po ra 10 we ge w) r( G a 3w t e ) 2 Peak Gate Current (3A) On-state peak voltage (V) Fig.2 Transient thermal impedance(junction-case) 10 0 5 125 ° C 25 ° C 3 2 -30°C Maximum Gate Voltage that will not trigger any unit 2 10 1 2 5 10 2 2 1 1 www.nellsemi.com 10 Cycles @50Hz 100 Page 4 of 4 Time (ms) 5 10 3 2 5