Nell NKT90A Thyristor/diode and thyristor/thyristor, 90a(add-a-pak power modules) Datasheet

RoHS
RoHS
NKT90A/NKH90A Series
SEMICONDUCTOR
Nell High Power Products
Thyristor/Diode and Thyristor/Thyristor, 90A
(ADD-A-PAK Power Modules)
80
3
21
5.6
5
4
ADD-A-PAK
13.6
7
2
6
1
2-Ø6.4
15
20
20
15
92
FEATURES
• High voltage
68
3-M5 SCREWS
• Electrically isolated by DBC ceramic (AI 2O3)
4-2.8x0.8
18
31
• Industrial standard package
5
6
• High surge capability
29.5
• 3000 V RMS isolating voltage
• Glass passivated chips
• Modules uses high voltage power thyristor/diodes in two
basic configurations
• Simple mounting
All dimensions in millimeters
• UL approved file E320098
• Compliant to RoHS
• Designed and qualified for multiple level
APPLICATIONS
(6)
(7)
NKT
• DC motor control and drives
(5)
(4)
• Battery charges
• Welders
• Power converters
NKH
• Lighting control
(5)
(4)
• Heat and temperature control
PRODUCT SUMMARY
90 A
IT(AV)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
VALUE
CHARACTERISTICS
IT(AV)
85 °C
IT(RMS)
85 °C
141
50 Hz
2000
60 Hz
2100
50 Hz
20
60 Hz
18.3
ITSM /IFSM
I2t
90
I2√t
200
UNITS
A
A
kA2s
kA2√s
VDRM / VRRM
Range
400 to 1600
V
TJ
Range
-40 to 125
°C
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Page 1 of 4
NKT90A/NKH90A Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VRRM /V DRM , MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM /V DSM , MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
04
400
500
08
800
900
12
1200
1300
14
1400
1500
16
1600
1700
NKT90..A
NKH90..A
IRRM /I DRM
AT 125 °C
mA
10
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average on-state current
at case temperature
IT(AV)
180° conduction, half sine wave ,50Hz
Maximum RMS on-state current
lT(RMS)
180° conduction, half sine wave ,50Hz ,TC = 85°C
Maximum peak, one-cycle, on-state
non-repetitive surge current
ITSM
t = 10 ms
I 2t
UNITS
90
A
85
°C
141
2000
t = 8.3 ms
No voltage
reapplied
t = 10 ms
Maximum I 2t for fusing
VALUE
t = 8.3 ms
2100
Sine half wave,
initial TJ =
TJ maximum
100%V RRM
reapplied
t = 10 ms
t = 8.3 ms
A
20
18.3
kA2s
14
12.8
Maximum I 2√t for fusing
2√
I t
t = 0.1 ms to 10 ms, no voltage reapplied
200
Maximum on-state voltage drop
VTM
ITM = 270A , TJ = 25 °C, 180° conduction
1.6
Maximum forward voltage drop
VFM
IFM = 270A , TJ = 25 °C, 180° conduction
1.3
kA2√s
V
Maximum holding current
IH
Anode supply = 6 V,resistive load, TJ = 25 °C
150
Maximum latching current
IL
Anode supply = 6 V resistive load, TJ = 25 °C
400
SYMBOL
TEST CONDITIONS
VALUES
UNITS
10
mA
mA
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
IRRM
IDRM
TJ = 125 °C
RMS isolation Voltage
VISO
50 Hz, circuit to base,
all terminals shorted
Critical rate of rise of
off-state voltage
dV/dt
TJ = TJ maximum,
exponential to 67 % rated V DRM
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2500 (1min)
3000 (1s)
500
V
V/μs
NKT90A/NKH90A Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
Maximum average gate power
TEST CONDITIONS
VALUES
PGM
t p ≤ 5 ms, TJ = TJ maximum
10
PG(AV)
f = 50 Hz, TJ = TJ maximum
3
IGM
Maximum peak gate current
Maximum peak negative
gate voltage
- VGT
3
t p ≤ 5 ms, TJ = TJ maximum
UNITS
W
A
10
V
Maximum required DC
gate voltage to trigger
VGT
0.7~1.6
Anode supply = 6 V,
resistive load; Ra = 1 Ω
TJ = 25 °C
Maximum required DC
I GT
gate current to trigger
Maximum gate voltage
that will not trigger
VGD
Maximum gate current
that will not trigger
I GD
Maximum rate of rise of
turned-on current
dI/dt
20~100
mA
0.25
V
10
mA
150
A/μs
TJ = TJ maximum, 66.7% V DRM applied
TJ = 25ºC ,IGM = 1.5A ,tr ≤ 0.5 µs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating
temperature range
TEST CONDITIONS
VALUES
TJ
- 40 to 125
Maximum storage
temperature range
TStg
- 40 to 150
Maximum thermal resistance,
junction to ca se per junction
RthJC
DC operation
0.28
Maximum thermal resistance,
case to heatsink per module
RthCS
Mounting surface, smooth , flat and greased
0.077
°C
°C/W
AAP to heatsink, M6
Mounting
torque ± 10 % busbar to AAP, M5
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
Lubricated threads.
Approximate weight
4
N.m
120
g
4.23
oz.
ADD-A-PAK
Case style
ORDERING INFORMATION TABLE
Device code
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UNITS
NK
T
90
1
2
3
/
16
A
4
5
1
-
Module type
2
-
Circuit configuration
3
-
Current rating: IT(AV)
4
-
Voltage code x 100 = V RRM
5
-
Assembly type,”A” for soldering type
Page 3 of 4
NKT90A/NKH90A Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.1 Peak On-state Voltage vs. Peak On-state Current
Fig.2 Max. Thermal Impedance (Junction To case) Vs. Time
0.3
3.8
Thermal impedance (°C/W)
Peak On-state voltage (V)
3.4
3
2.6
2.2
1.8
1.4
1
0.25
0.2
0.15
0.1
0.05
0
0.6
10
100
1000
0.001
0.01
0.1
Peak On-state Current (A)
Time (s)
Fig.3 Power Dissipation Vs. Average On-state Current
Fig.4 Case Temperature Vs. Average O n-state Current
140
180°
200
90°
120°
60°
150
30°
100
Case Temperature (°C)
250
Power Dissipation (W)
10
1
120
100
80
60
40
50
0
30
0
60
0
120
90
60°
30°
20
30
0
60
90°
120
90
120° 180°
150
180
2
5
Average On-state current (A)
Fig.5 Surge On-state Current Vs. Cycles
Fig.6 Gate characteristics
2
2
1.8
10¹
Gate voltage (V)
Surge On-state current (KA)
2.2
1.6
1.4
1.2
1
0.8
2
10º
5
2
0.6
0.4
5
1
10
100
2
5
10²
2
5
10³
Gate current (mA)
Time(cycles)
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10¯¹
10¹
Page 4 of 4
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