NSC NM93C66LM8 256-/1024-/2048-/4096-bit serial eeprom with extended voltage (2.7v to 5.5v) (microwire bus interface) Datasheet

NM93C06L/C46L/C56L/C66L
256-/1024-/2048-/4096-Bit Serial EEPROM
with Extended Voltage (2.7V to 5.5V)
(MICROWIRE TM Bus Interface)
General Description
Features
The
NM93C06L/C46L/C56L/C66L
devices
are
256/1024/2048/4096 bits, respectively, of non-volatile
electrically erasable memory divided into 16/64/128/256 x
16-bit registers (addresses). The NM93CxxL Family functions in an extended voltage operating range, requires only
a single power supply and is fabricated using National Semiconductor’s floating gate CMOS technology for high reliability, high endurance and low power consumption. These devices are available in both SO and TSSOP packages for
small space considerations.
The EEPROM Interfacing is MICROWIRE compatible for
simple interface to standard microcontrollers and microprocessors. There are 7 instructions that control these devices: Read, Erase/Write Enable, Erase, Erase All, Write,
Write All, and Erase/Write Disable. The ready/busy status
is available on the DO pin during programming.
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
2.7V to 5.5V operation in all modes
Typical active current of 100 mA; Typical standby
current of 1 mA
No erase required before write
Reliable CMOS floating gate technology
MICROWIRE compatible serial I/O
Self-timed programming cycle
Device status during programming mode
40 years data retention
Endurance: 106 data changes
Packages available: 8-pin SO, 8-pin DIP, and 8-pin
TSSOP
Block Diagram
TL/D/10045 – 1
TRI-STATEÉ is a registered trademark of National Semiconductor Corporation.
MICROWIRETM is a trademark of National Semiconductor Corporation.
C1996 National Semiconductor Corporation
TL/D/10045
RRD-B30M126/Printed in U. S. A.
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NM93C06L/C46L/C56L/C66L 256-/1024-/2048-/4096-Bit
Serial EEPROM with Extended Voltage (2.7V to 5.5V) (MICROWIRE Bus Interface)
November 1996
Connection Diagrams
Dual-In-Line Package (N)
8-Pin SO (M8) and 8-Pin TSSOP (MT8)
Pin Names
TL/D/10045–2
CS
Chip Select
SK
Serial Data Clock
DI
Serial Data Input
DO
Serial Data Output
GND
Ground
VCC
Power Supply
Top View
NS Package Number N08E, M08A or MTC08
Ordering Information
Commercial Temp. Range (0§ C to a 70§ C)
Order Number
NM93C06LN/NM93C46LN
NM93C56LN/NM93C66LN
NM93C06LM8/NM93C46LM8
NM93C56LM8/NM93C66LM8
NM93C06LMT8/NM93C46LMT8
NM93C56LMT8/NM93C66LMT8
Extended Temp. Range (b40§ C to a 85§ C)
Order Number
NM93C06LEN/NM93C46LEN
NM93C56LEN/NM93C66LEN
NM93C06LEM8/NM93C46LEM8
NM93C56LEM8/NM93C66LEM8
NM93C06LEMT8/NM93C46LEMT8
NM93C56LEMT8/NM93C66LEMT8
Automotive Temp. Range (b40§ C to a 125§ C)
Order Number
NM93C06LVN/NM93C46LVN
NM93C56LVN/NM93C66TLVN
NM93C06LVM8/NM93C46LVM8
NM93C56LVM8/NM93C66LVM8
NM93C06LVMT8/NM93C46LVMT8
NM93C56LVMT8/NM93C66LVMT8
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2
Absolute Maximum Ratings (Note 1)
Operating Conditions
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Ambient Operating Temperature
NM93C06L – NM93C66L
NM93C06LE – NM93C66LE
NM93C06LV – NM93C66LV
Ambient Storage Temperature
All Input or Output Voltages
with Respect to Ground
Lead Temp. (Soldering, 10 sec.)
ESD Rating
b 65§ C to a 150§ C
0§ C to a 70§ C
b 40§ C to a 85§ C
b 40§ C to a 125§ C
Power Supply (VCC) Range
a 6.5V to b 0.3V
2.7V to 5.5V
a 300§ C
2000V
DC and AC Electrical Characteristics: 2.7 V k VCC k 4.5V
Symbol
Max
Units
Operating Current
CS e VIH, SK e 250 kHz
1
mA
ICCS
Standby Current
CS e VIL
10
mA
IIL
IOL
Input Leakage
Output Leakage
VIN e 0V to VCC
g1
mA
VIL
VIH
Input Low Voltage
Input High Voltage
0.15 VCC
VCC a 1
V
VOL
VOH
Output Low Voltage
Output High Voltage
fSK
SK Clock Frequency
0
tSKH
SK High Time
1
ms
tSKL
SK Low Time
1
ms
tSKS
SK Setup Time
SK Must Be at VIL for
tSKS before CS goes high
0.2
ms
tCS
Minimum CS
Low Time
(Note 2)
1
ms
tCSS
CS Setup Time
0.2
ms
tDH
DO Hold Time
70
ns
tDIS
DI Setup Time
0.4
ms
tCSH
CS Hold Time
0
ms
tDIH
DI Hold Time
0.4
ms
tPD1
Output Delay to ‘‘1’’
2
ms
tPD0
Output Delay to ‘‘0’’
2
ms
tSV
CS to Status Valid
1
ms
tDF
CS to DO in
TRI-STATEÉ
0.4
ms
tWP
Write Cycle Time
15
ms
ICCA
Parameter
Part Number
Conditions
Min
b 0.1
0.8 VCC
IOL e 10 mA
IOH e b10 mA
CS e VIL
3
0.1 VCC
V
250
kHz
0.9 VCC
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DC and AC Electrical Characteristics: 4.5V k VCC k 5.5V
Max
Units
ICCA
Symbol
Operating Current
CS e VIH, SK e 1 MHz
1
mA
ICCS
Standby Current
CS e VIL
50
mA
IIL
IOL
Input Leakage
Output Leakage
VIN e 0V to VCC
(Note 4)
g1
mA
VIL
VIH
Input Low Voltage
Input High Voltage
0.8
VCC a 1
V
VOL1
VOH1
Output Low Voltage
Output High Voltage
IOL e 2.1 mA
IOH e b400 mA
VOL2
VOH2
Output Low Voltage
Output High Voltage
IOL e 10 mA
IOL e b10mA
fSK
SK Clock Frequency
tSKH
SK High Time
tSKL
SK Low Time
tSKS
SK Setup TIme
SK Must Be at VIL for
tSKS before CS goes high
tCS
Minimum CS
Low Time
(Note 2)
tCSS
tDH
tDIS
DI Setup Time
tCSH
tDIH
tPD1
Output Delay to ‘‘1’’
500
ns
tPD0
Output Delay to ‘‘0’’
500
ns
tSV
CS to Status Valid
500
ns
tDF
CS to DO in
TRI-STATE
100
ns
10
ms
tWP
Parameter
Part Number
Conditions
Min
b 0.1
2
(Note 5)
NM93C06L-NM93C66L
NM93C06LE-NM93C66LE
0.4
2.4
0.2
VCC b 0.2
0
1
V
V
MHz
250
300
ns
250
ns
50
ns
250
ns
CS Setup Time
50
ns
DO Hold Time
70
ns
100
200
ns
CS Hold Time
0
ns
DI Hold Time
20
NM93C06L-NM93C66L
NM93C06LE-NM93C66LE
CS e VIL
Write Cycle Time
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4
ns
Capacitance (Note 3)
TA e 25§ C, f e 1 MHz
Max
Units
COUT
Symbol
Output Capacitance
Test
Typ
5
pF
CIN
Input Capacitance
5
pF
Note 1: Stress above those listed under ‘‘Absolute Maximum Ratings’’ may cause permanent damage to the device. This is a stress rating only and operation of the
device at these or any other conditions above those indicated in the operational sections of the specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Note 2: CS (Chip Select) must be brought low (to VIL) for an interval of tCS in order to reset all internal device registers (device reset) prior to beginning another
opcode cycle (this is shown in the opcode diagrams in the following pages).
Note 3: This parameter is periodically sampled and not 100% tested.
Note 4: Typical leakage values are in the 20 nA range.
Note 5: The shortest allowable SK clock period e 1/fSK (as shown under the fSK parameter). Maximum SK clock speed (minimum SK period) is determined by the
interaction of several AC parameters stated in the datasheet. Within this SK period, both tSKH and tSKL limits must be observed. Therefore, it is not allowable to set
1/tSK e tSKH (minimum) a tSKL (minimum) for shorter SK cycle time operation.
AC Test Conditions
VIL/VIH
Input Levels
VIL/VIH
Timing Levels
VOL/VOH
Timing Levels
IOL/IOH
2.7V s VCC k 4.5V
(Extended Voltage Levels)
0.3V/1.8V
1.0V
0.8V/1.5V
g 10 mA
4.5V s VCC s 5.5V
(TTL Levels)
0.4V/2.4V
1.0V/2.0V
0.4V/2.4V
b 2.1 mA/0.4 mA
VCC Range
Output Load: 1 TTL Gate (CL e 100 pF)
Functional Description
instruction. Once an Erase/Write Enable instruction is executed, programming remains enabled until an Erase/Write
Disable (WDS) instruction is executed or VCC is completely
removed from the part.
The NM93C06L/C46L/C56L/C66L device have 7 instructions as described below. Note that the MSB of any instruction is a ‘‘1’’ and is viewed as a start bit in the interface
sequence. For the C06 and C46 the next 8 bits carry the op
code and the 6-bit address for register selection. For the
C56 and C66 the next 10-bits carry the op code and the 8bit address for register selection.
Erase (ERASE):
The ERASE instruction will program all bits in the selected
register to the logical ‘‘1’’ state. CS is brought low following
the loading of the last address bit. This falling edge of the
CS pin initiates the self-timed programming cycle.
The DO pin indicates the READY/BUSY status of the chip if
CS is brought high after the tCS interval. DO e logical ‘‘0’’
indicates that programming is still in progress. DO e logical
‘‘1’’ indicates that the register, at the address specified in
the instruction, has been erased, and the part is ready for
another instruction.
Read (READ):
The READ instruction outputs serial data on the DO pin.
After a READ instruction is received, the instruction and address are decoded, followed by data transfer from the selected memory register into a 16-bit serial-out shift register.
A dummy bit (logical 0) precedes the 16-bit data output
string. Output data changes are initiated by a low to high
transition of the SK clock.
Erase/Write Enable (WEN):
When VCC is applied to the part, it powers up in the Erase/
Write Disable (WDS) state. Therefore, all programming
modes must be preceded by an Erase/Write Enable WEN
5
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Functional Description (Continued)
state. The Erase All cycle is identical to the ERASE cycle
except for the different op-code. As in the ERASE mode,
the DO pin indicates the READY/BUSY status of the chip if
CS is brought high after the tCS interval.
Write (WRITE):
The WRITE instruction is followed by 16 bits of data to be
written into the specificed address. After the last bit of data
is put on the data-in (DI) pin, CS must be brought low before
the next rising edge of the SK clock. This falling edge of CS
initiates the self-timed programming cycle. The DO pin indicates the READY/BUSY status of the chip if CS is brought
high after the tCS interval. DO e logical 0 indicates that
programming is still in progress. DO e logical 1 indicates
that the register at the address specified in the instruction
has been written with the data pattern specified in the instruction and the part is ready for another instruction.
Write All (WRALL):
The WRALL instruction will simultaneously program all registers with the data pattern specified in the instruction. As in
the WRITE mode, the DO pin indicates the READY/BUSY
status of the chip if CS is brought high after the tCS interval.
Write Disable (WDS):
To protect against accidental data distrub, the WDS instruction disables all programming modes and should follow all
programming operations. Execution of a READ instruction is
independent of both the WEN and WDS instructions.
Erase All (ERAL):
The ERAL instruction will simultaneously program all registers in the memory array and set each bit to the logical ‘‘1’’
Note: NSC CMOS EEPROMs do not require an ‘‘ERASE’’ or ‘‘ERASE ALL’’ operation prior to the ‘‘WRITE’’ and ‘‘WRITE ALL’’ instructions. The ‘‘ERASE’’ and
‘‘ERASE ALL’’ instructions are included to maintain compatibility with earlier technology EEPROMs.
Instruction Set for the NM93C06L and NM93C46L
SB
Op Code
Address
READ
Instruction
1
10
A5–A0
Data
Reads data stored in memory at specified address.
Comments
WEN
1
00
11XXXX
Enable all programming modes.
ERASE
1
11
A5–A0
WRITE
1
01
A5–A0
ERAL
1
00
10XXXX
WRALL
1
00
01XXXX
WDS
1
00
00XXXX
Erase selected register.
D15 – D0
Writes selected register.
Erases all registers.
D15 – D0
Writes all registers.
Disables all programming modes.
Note: Address bits A5 and A4 become ‘‘Don’t Care’’ for the NM93C06L.
Instruction Set for the NM93C56L and NM93C66L
SB
Op Code
Address
READ
Instruction
1
10
A7–A0
WEN
1
00
11XXXXXX
ERASE
1
11
A7–A0
WRITE
1
01
A7–A0
ERAL
1
00
10XXXXXX
WRALL
1
00
01XXXXXX
WDS
1
00
00XXXXXX
Data
Enable all programming modes.
Erase selected register.
D15 – D0
Writes selected register.
Erases all registers.
D15 – D0
Writes all registers.
Disables all programming modes.
Note: Address bit A7 is ‘‘Don’t Care’’ for the NM93C56L.
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Comments
Reads data stored in memory at specified address.
6
Timing Diagrams
Synchronous Data Timing
TL/D/10045 – 13
READ
TL/D/10045 – 5
WEN
TL/D/10045 – 6
7
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Timing Diagrams (Continued)
WDS
TL/D/10045 – 7
WRITE
TL/D/10045 – 8
WRALL
TL/D/10045 – 9
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8
Timing Diagrams (Continued)
ERASE
TL/D/10045 – 10
ERAL
TL/D/10045 – 11
9
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Physical Dimensions inches (millimeters) unless otherwise noted
Molded Small Out-Line Package (M8)
NS Package Number M08A
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10
Physical Dimensions inches (millimeters) unless otherwise noted (Continued)
Notes: Unless otherwise specified.
1. Reference JEDEC Registration M0-153, Variation AA. Dated 7/93.
8-Pin Molded TSSOP, JEDEC (MT8)
NS Package Number MTC08
11
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NM93C06L/C46L/C56L/C66L 256-/1024-/2048-/4096-Bit
Serial EEPROM with Extended Voltage (2.7V to 5.5V) (MICROWIRE Bus Interface)
Physical Dimensions inches (millimeters) unless otherwise noted (Continued)
Molded Dual-In-Line Package (N)
NS Package Number N08E
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