NSC NM93CS56MN (microwiretm bus interface) 256-/1024-/2048-/4096-bit serial eeprom with data protect and sequential read Datasheet

NM93CS06/CS46/CS56/CS66
(MICROWIRE TM Bus Interface) 256-/1024-/2048-/4096-Bit
Serial EEPROM with Data Protect and Sequential Read
General Description
The NM93CS06/CS46/CS56/CS66 devices are 256/
1024/2048/4096 bits, respectively, of CMOS non-volatile
electrically erasable memory divided into 16/64/128/
256 16-bit registers. Selected registers can be protected
against data modification by programming the Protect Register with the address of the first register to be protected
against data modification (all registers greater than, or equal
to, the selected address are then protected from further
change). Additionally, this address can be ‘‘locked’’ into the
device, making all future attempts to change data impossible. These devices are fabricated using National Semiconductor floating-gate CMOS process for high reliability, high
endurance and low power consumption. The NM93CSXX
Family is offered in an SO package for small space considerations.
The EEPROM interfacing is MICROWIRE compatible providing simple interfacing to standard microcontrollers and
microprocessors. There are a total of 10 instructions, 5
which operate on the EEPROM memory, and 5 which operate on the Protect Register. The memory instructions are
READ, WRITE, WRITE ALL, WRITE ENABLE, and WRITE
DISABLE. The Protect register instructions are PRREAD,
PRWRITE, PRENABLE, PRCLEAR, and PRDISABLE.
Features
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Write protection in a user defined section of memory
Sequential register read
Typical active current of 400 mA and standby current of
25 mA
No erase required before write
Reliable CMOS floating gate technology
MICROWIRE compatible serial I/O
Self timed write cycle
Device status during programming mode
40 year data retention
Endurance: 106 data changes
4.5V to 5.5V operation in all modes of operation
Packages available: 8-pin SO, 8-pin DIP
Block Diagram
TL/D/10750 – 1
TRI-STATEÉ is a registered trademark of National Semiconductor Corporation.
MICROWIRETM is a trademark of National Semiconductor Corporation.
C1995 National Semiconductor Corporation
TL/D/10750
RRD-B30M75/Printed in U. S. A.
NM93CS06/CS46/CS56/CS66 (MICROWIRE Bus Interface)
256-/1024-/2048-/4096-Bit Serial EEPROM with Data Protect and Sequential Read
August 1994
Connection Diagram
Pin Names
Dual-In-Line Package (N)
and 8-Pin SO (M8)
CS
Chip Select
SK
Serial Data Clock
DI
Serial Data Input
DO
Serial Data Output
GND
TL/D/10750–2
PE
Top View
NS Package Number
N08E and M08A
Ground
Program Enable
PRE
Protect Register Enable
VCC
Power Supply
Ordering Information
Commercial Temp. Range (0§ C to a 70§ C)
Order Number*
NM93CS06N/NM93CS46N/NM93CS56N/NM93CS66N
NM93CS06M8/NM93CS46M8/NM93CS56M8/NM93CS66M8
Extended Temp. Range (b40§ C to a 85§ C)
Order Number*
NM93CS06EN/NM93CS46EN/NM93CS56EN/NM93CS66EN
NM93CS06EM8/NM93CS46EM8/NM93CS56EM8/NM93CS66EM8
Military Temp. Range (b55§ C to a 125§ C)
Order Number*
NM93CS06MN/NM93CS46MN/NM93CS56MN/NM93CS66MN
NM93CS06MM8/NM93CS46MM8/NM93CS56MM8/NM93CS66MM8
2
Absolute Maximum Ratings
Operating Conditions
(Note 1)
Ambient Operating Temperature
NM93CSxx
NM93CSxxE
NM93CSxxM
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Ambient Storage Temperature
b 65§ C to a 150§ C
All Input or Output Voltages
with Respect to Ground
Lead Temperature (Soldering, 10 sec.)
ESD rating
0§ C to a 70§ C
b 40§ C to a 85§ C
b 55§ C to a 125§ C
Power Supply (VCC)
a 6.5V to b 0.3V
4.5V to 5.5V
a 300§ C
2000V
DC and AC Electrical Characteristics VCC e 4.5V to 5.5V unless otherwise specified
Throughout this table, ‘‘M’’ refers to temperature range ( b55§ C to a 125§ C), not package.
Symbol
ICCA
ICCS
Parameter
Operating Current
Standby Current
Part Number
Conditions
NM93CS06–NM93CS66
NM93CS06E–NM93CS66E
NM93CS06M–NM93CS66M
CS e VIH, SK e 1.0 MHz
SK e 1.0 MHz
SK e 0.5 MHz
NM93CS06–NM93CS66
NM93CS06E–NM93CS06E
NM93CS06M–NM93CS06M
CS e VIL
Min
IIL
IOL
Input Leakage
Output Leakage
VIL
VIH
Input Low Voltage
Input High Voltage
VOL1
VOH1
Output Low Voltage
Output High Voltage
IOL e 2.1 mA
IOH e b400 mA
2.4
VOL2
VOH2
Output Low Voltage
Output High Voltage
IOL e 10 mA
IOH e b10 mA
VCC b 0.2
fSK
SK Clock Frequency
tSKH
SK High Time
tSKL
SK Low Time
tSKS
SK Setup Time
tCS
Minimum CS
Low Time
tCSS
CS Setup Time
tPRES
PRE Setup Time
tDH
DO Hold Time
tPES
PE Setup Time
tDIS
tCSH
DI Setup Time
VIN e 0V to VCC
(Note 4)
b 0.1
2
NM93CS06–NM93CS66
NM93CS06E–NM93CS66E
NM93CS06M–NM93CS66M
(Note 5)
NM93CS06–NM93CS66
NM93CS06E–NM93CS66E
NM93CS06M–NM93CS66M
NM93CS06–NM93CS66
NM93CS06E–NM93CS66E
NM93CS06M–NM93CS66M
NM93CS06-NM93CS66
NM93CS06E-NM93CS66E
NM93CS06M–NM93CS66M
Max
Units
1
1
1
mA
50
50
100
mA
g b1
mA
0.8
VCC a 1
V
0.4
0.2
0
0
0
1
1
0.5
V
V
MHz
250
300
500
ns
250
ns
SK Must Be at VIL
for tSKS before CS
goes high
50
50
100
ns
(Note 2)
250
250
500
ns
100
ns
50
50
100
ns
70
ns
NM93CS06–NM93CS66
NM93CS06E–NM93CS66E
NM93CS06M–NM93CS66M
50
50
100
ns
NM93CS06–NM93CS66
NM93CS06E–NM93CS66E
NM93CS06M–NM93CS66M
100
100
200
ns
0
ns
CS Hold Time
3
DC and AC Electrical Characteristics VCC e 4.5V to 5.5V unless otherwise specified (Continued)
Symbol
tPEH
Parameter
Part Number
PE Hold Time
NM93CS06–NM93CS66
NM93CS06E–NM93CS66E
NM93CS06M–NM93CS66M
tPREH
PRE Hold Time
tDIH
DI Hold Time
tPD1
Output Delay to ‘‘1’’
tPD0
CS to Status Valid
tDF
CS to DO in
TRI-STATEÉ
tWP
Min
Max
Units
250
250
500
ns
50
ns
20
Output Delay to ‘‘0’’
tSV
Conditions
ns
NM93CS06–NM93CS66
NM93CS06E–NM93CS66E
NM93CS06M–NM93CS66M
500
500
1000
ns
NM93CS06–NM93CS66
NM93CS06E–NM93CS66E
NM93CS06M–NM93CS66M
500
500
1000
ns
NM93CS06–NM93CS66
NM93CS06E–NM93CS66E
NM93CS06M–NM93CS66M
500
500
1000
ns
100
100
200
ns
10
ms
NM93CS06–NM93CS66
NM93CS06E–NM93CS66E
NM93CS06M–NM93CS66M
CS e VIL
Write Cycle Time
Capacitance (Note 3)
TA e 25§ C, f e 1 MHz
Max
Units
COUT
Symbol
Output Capacitance
Test
Typ
5
pF
CIN
Input Capacitance
5
pF
Note 1: Stress ratings above those listed under ‘‘Absolute Maximum Ratings’’ may cause permanent damage to the device. This is a stress rating only and
operation of the device at these or any other conditions above those indicated in the operational sections of the specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note 2: CS (Chip Select) must be brought low (to VIL) for an interval of tCS in order to reset all internal device registers (device reset) prior to beginning another
opcode cycle (this is shown in the opcode diagrams in the following pages).
Note 3: This parameter is periodically sampled and not 100% tested.
Note 4: Typical leakage values are in the 20 nA range.
Note 5: The shortest allowable SK clock period e 1/fSK (as shown under the fSK parameter). Maximum SK clock speed (minimum SK period) is determined by the
interaction of several AC parameters stated in the datasheet. Within this SK period, both tSKH and tSKL limits must be observed. Therefore, it is not allowable to set
1/fSK e tSKH (minimum) a tSKL (minimum) for shorter SK cycle time operation.
AC Test Conditions
VCC Range
VIL/VIH
Input Levels
VIL/VIH
Timing Level
VOL/VOH
Timing Level
4.5V s VCC
s 5.5V
(TTL Levels)
0.4V/2.4V
1.0V/2.0V
0.4V/2.4V
Output Load: 1 TTL Gate (CL e 100 pF)
4
IOL/IOH
b 2.1 mA/
0.4 mA
Functional Description
The NM93CSxx EEPROM Family has 10 instructions as described below. All Data-In signals are clocked into the device on the low-to-high SK transition.
Note: For all Protect Register Operations: If the PRE pin is
not held at VIH, all instructions will be applied to the
EEPROM array, rather than the Protect Register.
Read and Sequential Register Read (READ):
The READ instruction outputs serial data on the D0 pin.
After a READ instruction is received, the instruction and address are decoded, followed by data transfer from the selected memory register into a 16-bit serial-out shift register.
A dummy bit (logical 0) precedes the 16-bit data output
string. Output data changes are initiated by a low to high
transition of the SK clock. In the sequential register read
mode of operation, the memory automatically cycles to the
next register after each 16 data bits are clocked out. The
dummy-bit is suppressed in this mode and a continuous
string of data is obtained.
Protect Register Read (PRREAD):
The PRREAD instruction outputs the address stored in the
Protect Register on the DO pin. The PRE pin MUST be held
high while loading the instruction sequence. Following the
PRREAD instruction the 6- or 8-bit address stored in the
memory protect register is transferred to the serial out shift
register. As in the READ mode, a dummy bit (logical 0) precedes the 6- or 8-bit address string.
Protect Register Enable (PREN):
The PREN instruction is used to enable the PRCLEAR,
PRWRITE, and PRDS modes. Before the PREN mode can
be entered, the part must be in the Write Enable (WEN)
mode. Both the PRE and PE pins MUST be held high while
loading the instruction sequence.
Note that a PREN instruction must immediately precede a
PRCLEAR, PRWRITE, or PRDS instruction.
Write Enable (WEN):
When VCC is applied to the part, it ‘‘powers up’’ in the Write
Disable (WDS) state. Therefore, all programming modes
must be preceded by a Write Enable (WEN) instruction.
Once a Write Enable instruction is executed, programming
remains enabled until a Write Disable (WDS) instruction is
executed or VCC is completely removed from the part.
Protect Register Clear (PRCLEAR):
The PRCLEAR instruction clears the address stored in the
Protect Register and, therefore, enables all registers for the
WRITE and WRALL instruction. The PRE and PE pins must
be held high while loading the instruction sequence, however, after loading the PRCLEAR instruction the PRE and PE
pins become ‘‘don’t care’’. Note that a PREN instruction
must immediately precede a PRCLEAR instruction.
Please note that the PRCLEAR instruction and the
PRWRITE instruction will both program the Protect Register
with all 1s. However, the PRCLEAR instruction will allow the
LAST register to be programmed, whereas the PRWRITE
instruction e all 1s will PREVENT the last register from
being programmed. In addition, the PRCLEAR instruction
will allow the use of the WRALL command, where the
PRWRITE e all 1s will lock out the Bulk programming opcode.
Write (WRITE):
The WRITE instruction is followed by 16 bits of data to be
written into the specified address. After the last bit of data is
put on the data-in (DI) pin, CS must be brought low before
the next rising edge of the SK clock. This falling edge of the
CS initiates the self-timed programming cycle. The PE pin
MUST be held high while loading the WRITE instruction,
however, after loading the WRITE instruction the PE pin becomes a ‘‘don’t care’’. The D0 pin indicates the READY/
BUSY status of the chip if CS is brought high after the tCS
interval. D0 e logical 0 indicates that programming is still in
progress. D0 e logical 1 indicates that the register at the
address specified in the instruction has been written with
the data pattern specified in the instruction and the part is
ready for another instruction.
Protect Register Write (PRWRITE):
The PRWRITE instruction is used to write into the Protect
Register the address of the first register to be protected.
After the PRWRITE instruction is executed, all memory registers whose addresses are greater than or equal to the
address specified in the Protect Register are protected from
the WRITE operation. Note that before executing a
PRWRITE instruction the Protect Register must first be
cleared by executing a PRCLEAR operation and that the
PRE and PE pins must be held high while loading the instruction, however, after loading the PRWRITE instruction
the PRE and PE pins become ‘don’t care’. Note that a
PREN instruction must immediately precede a PRWRITE
instruction.
Write All (WRALL):
The WRALL instruction is valid only when the Protect Register has been cleared by executing a PRCLEAR instruction.
The WRALL instruction will simultaneously program all registers with the data pattern specified in the instruction. Like
the WRITE instruction, the PE pin MUST be held high while
loading the WRALL instruction, however, after loading the
instruction the PE pin becomes a ‘‘don’t care’’. As in the
WRITE mode, the DO pin indicates the READY/BUSY
status of the chip if CS is brought high after the tCS interval.
This function is DISABLED if the Protect Register is in use
to lock out a section of memory.
Write Disable (WDS):
To protect against accidental data disturb, the Write Disable
(WDS) instruction disables all programming modes and
should follow all programming operations. Execution of a
READ instruction is independent of both the WEN and WDS
instructions.
Protect Register Disable (PRDS):
The PRDS instruction is a ONE TIME ONLY instruction
which renders the Protect Register unalterable in the future.
Therefore, the specified registers become PERMANENTLY
protected against data changes. As in the PRWRITE instruction the PRE and PE pins must be held high while
loading the instruction, and after loading the PRDS instruction the PRE and PE pins become ‘‘don’t care’’.
Note that a PREN instruction must immediately precede a
PRDS instruction.
5
Instruction Set for the NM93CS06 and NM93CS46
SB
Op Code
Address
READ
Instruction
1
10
A5–A0
Data
PRE
PE
Comments
0
X
Reads data stored in memory, starting at specified address.
WEN
1
00
11XXXX
WRITE
1
01
A5–A0
D15–D0
0
1
Enable all programming modes.
0
1
WRALL
1
00
01XXXX
D15–D0
Writes address if unprotected.
0
1
Writes all registers. Valid only when Protect Register is
cleared.
WDS
1
00
PRREAD
1
10
00XXXX
0
X
Disables all programming modes.
XXXXXX
1
X
PREN
1
00
Reads address stored in Protect Register.
11XXXX
1
1
Must immediately precede PRCLEAR, PRWRITE, and
PRDS instructions.
PRCLEAR
1
11
111111
1
1
Clears the Protect Register so that no registers are
protected from WRITE.
PRWRITE
1
01
A5–A0
1
1
Programs address into Protect Register. Thereafter,
memory addresses t the address in Protect Register are
protected from WRITE.
PRDS
1
00
000000
1
1
ONE TIME ONLY instruction after which the address in the
Protect Register cannot be altered.
Note: Address bits A5 and A4 become ‘‘Don’t Care’’ for the NM93CS06.
Instruction Set for the NM93CS56 and NM93CS66
SB
Op Code
Address
PRE
PE
Comments
READ
Instruction
1
10
A7–A0
Data
0
X
Reads data stored in memory, starting at specified address.
WEN
1
00
11XXXXXX
0
1
Enable all programming modes.
WRITE
1
01
A7–A0
D15–D0
0
1
Writes address if unprotected.
WRALL
1
00
01XXXXXX
D15–D0
0
1
Writes all registers. Valid only when Protect Register is
cleared.
WDS
1
00
00XXXXXX
0
X
Disables all programming modes.
PRREAD
1
10
XXXXXXXX
1
X
Reads address stored in Protect Register.
PREN
1
00
11XXXXXX
1
1
Must immediately precede PRCLEAR, PRWRITE, and
PRDS instructions.
PRCLEAR
1
11
11111111
1
1
Clears the ‘‘protect register’’ so that no registers are
protected from WRITE.
PRWRITE
1
01
A7–A0
1
1
Programs address into Protect Register. Thereafter,
memory addresses t the address in Protect Register are
protected from WRITE.
PRDS
1
00
00000000
1
1
ONE TIME ONLY instruction after which the address in the
Protect Register cannot be altered.
Note: Address bit A7 becomes ‘‘Don’t Care’’ for the NM93CS56.
6
Timing Diagrams
Synchronous Data Timing
TL/D/10750 – 15
READ:
PRE e 0, PE e X
² The
memory automatically cycles to the next register with continued clocking of SK.
7
TL/D/10750 – 4
Timing Diagrams (Continued)
WEN:
PRE e 0, D0 e TRI-STATE
TL/D/10750 – 5
WDS:
PRE e 0, PE e X, DO e TRI-STATE
TL/D/10750 – 6
WRITE:
PRE e 0
TL/D/10750 – 7
8
Timing Diagrams (Continued)
WRALL:
PRE e 0
(PROTECT REGISTER MUST BE CLEARED)
TL/D/10750 – 8
PRREAD:
PE e X
TL/D/10750 – 9
9
Timing Diagrams (Continued)
PREN:
D0 e TRI-STATE
(A WEN CYCLE MUST PRECEDE A PREN CYCLE)
TL/D/10750 – 10
PRCLEAR:
(A PREN CYCLE MUST IMMEDIATELY PRECEDE A PRCLEAR CYCLE)
TL/D/10750 – 11
10
Timing Diagrams (Continued)
PRWRITE:
(PREN CYCLES MUST IMMEDIATELY PRECEDE A PRWRITE CYCLE.)
TL/D/10750 – 12
PRDS:
(*ONE TIME ONLY INSTRUCTION. A PREN CYCLE MUST IMMEDIATELY PRECEDE A PRDS CYCLE.)
TL/D/10750 – 13
11
12
Physical Dimensions inches (millimeters)
Molded Package, Small Outline, 0.15 Wide, 8-Lead (M8)
Order Number NM93CS06M8, NM93CS46M8 or NM93CS56M8
NS Package Number M08A
13
NM93CS06/CS46/CS56/CS66 (MICROWIRE Bus Interface)
256-/1024-/2048-/4096-Bit Serial EEPROM with Data Protect and Sequential Read
Physical Dimensions inches (millimeters) (Continued)
Molded Dual-In-Line Package (N)
Order Number NM93CS06N, NM93CS46N,
NM93CS56 or NM93CS66N
NS Package Number N08E
LIFE SUPPORT POLICY
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and whose
failure to perform, when properly used in accordance
with instructions for use provided in the labeling, can
be reasonably expected to result in a significant injury
to the user.
National Semiconductor
Corporation
2900 Semiconductor Drive
P.O. Box 58090
Santa Clara, CA 95052-8090
Tel: 1(800) 272-9959
TWX: (910) 339-9240
National Semiconductor
GmbH
Livry-Gargan-Str. 10
D-82256 F4urstenfeldbruck
Germany
Tel: (81-41) 35-0
Telex: 527649
Fax: (81-41) 35-1
National Semiconductor
Japan Ltd.
Sumitomo Chemical
Engineering Center
Bldg. 7F
1-7-1, Nakase, Mihama-Ku
Chiba-City,
Ciba Prefecture 261
Tel: (043) 299-2300
Fax: (043) 299-2500
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
National Semiconductor
Hong Kong Ltd.
13th Floor, Straight Block,
Ocean Centre, 5 Canton Rd.
Tsimshatsui, Kowloon
Hong Kong
Tel: (852) 2737-1600
Fax: (852) 2736-9960
National Semiconductores
Do Brazil Ltda.
Rue Deputado Lacorda Franco
120-3A
Sao Paulo-SP
Brazil 05418-000
Tel: (55-11) 212-5066
Telex: 391-1131931 NSBR BR
Fax: (55-11) 212-1181
National Semiconductor
(Australia) Pty, Ltd.
Building 16
Business Park Drive
Monash Business Park
Nottinghill, Melbourne
Victoria 3168 Australia
Tel: (3) 558-9999
Fax: (3) 558-9998
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
Similar pages