NEC NNCD3.3B Electrostatic discharge noise clipping diodes 500 mw type Datasheet

DATA SHEET
E.S.D NOISE CLIPPING DIODES
NNCD3.3B to NNCD12B
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES
(500 mW TYPE)
This product series is a diode developed for E.S.D (Electrostatic
PACKAGE DIMENSIONS
Discharge) noise protection. Based on the IEC1000-4-2 test on
(in millimeters)
electromagnetic interference (EMI), the diode assures an endurance of no less than 30 kV.
φ 0.5
DHD (Double Heatsink Diode) construction having allowable
power dissipation of 500 mW.
Cathode
indication
FEATURES
• Based on the electrostatic discharge immunity test (IEC1000-4-
φ 2.0 MAX.
25 MIN.
2), the product assures the minimum endurance of 30 kV.
4.2 MAX.
25 MIN.
Type NNCD2.0B to NNCD12B Series is into DO-35 Package with
• Based on the reference supply of the set, the product achieves
a series over a wide range (15 product name lined up).
• DHD (Double Heatsink Diode) construction.
APPLICATIONS
• Circuit E.S.D protection.
• Circuits for Waveform clipper, Surge absorber.
MAXIMUM RATINGS (TA = 25 °C)
Power Dissipation
P
500 mW
Surge Reverse Power
PRSM
100 W (tT = 10 µs 1 pulse)
Junction Temperature
Tj
175 °C
Storage Temperature
Tstg
–65 °C to +175 °C
Document No. D11770EJ2V0DS00 (2nd edition)
Date Published December 1996 N
Printed in Japan
Fig. 7
©
1996
NNCD3.3B to NNCD12B
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
Breakdown VoltageNote 1
VBR (V)
Type Number
Dynamic
ImpedanceNote 2
Zz (Ω)
Capacitance
Ct (pF)
TEST
CONDITION
E.S.D Voltage
(kV)
MIN.
MAX.
IT (mA)
MAX.
IT (mA)
MAX.
VR (V)
TYP.
NNCD3.3B
3.16
3.53
20
70
20
20
1.0
240
30
NNCD3.6B
3.47
3.83
20
60
20
10
1.0
230
30
NNCD3.9B
3.77
4.14
20
50
20
5
1.0
220
30
NNCD4.3B
4.05
4.53
20
40
20
5
1.0
210
30
NNCD4.7B
4.47
4.91
20
25
20
5
1.0
190
30
NNCD5.1B
4.85
5.35
20
20
20
5
1.5
160
30
NNCD5.6B
5.29
5.88
20
13
20
5
2.5
140
VR = 0 V
f = 1 MHz
MIN.
C = 150 pF
R = 330 Ω
30
(IEC1000
-4-2)
5.81
6.40
20
10
20
5
3.0
120
NNCD6.8B
6.32
6.97
20
8
20
2
3.5
110
30
NNCD7.5B
6.88
7.64
20
8
20
0.5
4.0
90
30
NNCD8.2B
7.56
8.41
20
8
20
0.5
5.0
90
30
NNCD9.1B
8.33
9.29
20
8
20
0.5
6.0
90
30
NNCD10B
9.19
10.3
20
8
20
0.2
7.0
80
30
NNCD11B
10.18
11.26
10
10
10
0.2
8.0
70
30
NNCD12B
11.13
12.30
10
10
10
0.2
9.0
70
30
2. Zz is measured at IT give a small A.C. signal.
TEST
CONDITION
30
NNCD6.2B
Notes 1. Tested with pulse (40 ms)
2
Reverse Leakage
IR (µA)
NNCD3.3B to NNCD12B
TYPICAL CHARACTERISTICS (TA = 25 °C)
Fig. 1 POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Fig. 2 THERMAL RESISTANCE vs.
SIZE OF P.C BOARD
600
Rth - Thermal Resistance - °C/W
500
= 5 mm
= 10 mm
400
300
10 mm
200
P.C Board
7 mm
t = 0.035 mm
P.C Board φ 3 mm
t = 0.035 mm
100
0
0
20
40
60
500
400
S
300
= 10 mm
200
= 5 mm
100
0
80 100 120 140 160 180 200
Junction to
anbient
0
20
Fig. 3 IT - VBR CHARACTERISTICS
NNCD5.6B
NNCD5.1B
100 m
40
60
80
S - Size of P.C Board - mm
TA - Ambient Temperature - °C
100
2
Fig. 4 IT - VBR CHARACTERISTICS
TA = 25 °C NNCD6.8B
TYP.
NNCD6.2B
NNCD7.5B
NNCD8.2B
NNCD3.3B
NNCD3.6B
10 m NNCD3.9B
NNCD4.3B
NNCD4.7B
1m
TA = 25 °C
TYP.
100 m
NNCD11B
NNCD12B
NNCD10B
NNCD9.1B
10 m
1m
IT - On State Current - A
IT - On State Current - A
P - Power Dissipation - mW
600
100 µ
10 µ
1µ
100 µ
10 µ
1µ
100 n
100 n
10 n
10 n
1n
1n
0
1
2
3
4
5
6
7
VBR - Breakdown Voltage - V
8
9
0
7
8
9
10 11 12 13 14 15
VBR - Breakdown Voltage - V
3
NNCD3.3B to NNCD12B
Fig. 5 Zz - IT CHARACTERISTICS
TA = 25 °C
TYP.
NNCD3.3B
100
NNCD3.9B
NNCD4.7B
NN
5B
7.
CD
1
0.01
0.1
6B
5.
CD
NN
10
NN
ZZ - Dynamic Impedance - Ω
1 000
CD
10
B
1
10
100
IT - On State Current - mA
Fig. 6 TRANSIENT THERMAL IMPEDANCE
Zth - Transient Thermal Impedance - °C/W
5 000
1 000
300 °C/W
NNCD [ ] B
100
10
5
1m
10 m
100 m
1
10
100
t - Time - s
Fig. 7 SURGE REVERSE POWER RATING
TA = 25 °C
Non-repetitive
PRSM
PRSM - Surge Reverse Power - W
1 000
tT
100
NNCD [ ] B
10
1
1µ
10 µ
100 µ
1m
tT - Pulse Width - s
4
10 m
100 m
NNCD3.3B to NNCD12B
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system
C11745E
NEC semiconductor device reliability/quality control system
MEI-1201
Quality grade on NEC semiconductor device
C11531E
Semiconductor device mounting technology manual
C10535E
Guide to quality assurance for semiconductor device
MEI-1202
5
NNCD3.3B to NNCD12B
[MEMO]
6
NNCD3.3B to NNCD12B
[MEMO]
7
NNCD3.3B to NNCD12B
[MEMO]
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this document.
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customer designated "quality assurance program" for a specific application. The recommended applications of
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before using it in a particular application.
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audio and visual equipment, home electronic appliances, machine tools, personal electronic
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systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
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Anti-radioactive design is not implemented in this product.
M4 96.5
8
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