Renesas NP160N04TUK Mos field effect transistor Datasheet

Preliminary Data Sheet
NP160N04TUK
R07DS0543EJ0100
Rev.1.00
Sep 23, 2011
MOS FIELD EFFECT TRANSISTOR
Description
The NP160N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Super low on-state resistance
RDS(on) = 1.5 mΩ MAX. ( VGS = 10 V, ID = 80 A )
• Low Ciss: Ciss = 7200 pF TYP. ( VDS = 25 V )
• Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP160N04TUK-E1-AY ∗1
NP160N04TUK-E2-AY ∗1
Lead Plating
Pure Sn (Tin)
Tape 800 p/reel
Packing
Taping (E1 type)
Taping (E2 type)
Package
TO-263-7pin (MP-25ZT)
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ∗1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Repetitive Avalanche Current ∗2
Repetitive Avalanche Energy ∗2
Symbol
Ratings
40
±20
±160
±640
250
1.8
175
−55 to +175
56
313
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAR
EAR
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.60
83.3
°C/W
°C/W
Notes: ∗1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1%
∗
2. RG = 25 Ω, VGS = 20 Æ 0 V
R07DS0543EJ0100 Rev.1.00
Sep 23, 2011
Page 1 of 6
NP160N04TUK
Chapter Title
Electrical Characteristics (TA = 25°C)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance ∗1
Symbol
IDSS
IGSS
VGS(th)
| yfs |
MIN.
TYP.
2.0
60
RDS(on)
3.0
120
1.25
Drain to Source On-state
Resistance ∗1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage ∗1
Reverse Recovery Time
Reverse Recovery Charge
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
7200
1040
390
30
16
100
13
126
32
31
0.9
62
110
MAX.
1
±100
4.0
1.50
Unit
μA
nA
V
S
mΩ
Test Conditions
VDS = 40 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 μ A
VDS = 5 V, ID = 80 A
VGS = 10 V, ID = 80 A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
VDD = 20 V, ID = 80 A,
VGS = 10 V,
RG = 0 Ω
10800
1560
710
70
40
200
40
189
1.5
VDD = 32 V,
VGS = 10 V,
ID = 160 A
IF = 160 A, VGS = 0 V
IF = 160 A, VGS = 0 V,
di/dt = 100 A/μ s
Note: ∗1. Pulsed test
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
PG.
VGS = 20 → 0 V
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
50 Ω
VGS
RL
Wave Form
RG
PG.
VDD
VGS
0
VGS
10%
90%
VDD
VDS
90%
BVDSS
IAS
90%
VDS
VGS
0
VDS
10%
0
10%
Wave Form
VDS
ID
τ
VDD
Starting Tch
τ = 1 μs
Duty Cycle ≤ 1%
td(on)
tr
ton
td(off)
tf
toff
TEST CIRCUIT 3 GATE CHARGE
PG.
D.U.T.
IG = 2 mA
RL
50 Ω
VDD
R07DS0543EJ0100 Rev.1.00
Sep 23, 2011
Page 2 of 6
NP160N04TUK
Chapter Title
Typical Characteristics (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
TOTAL POWER DISSIPATION vs.
OPERATING AREA
CASE TEMPERATURE
300
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
120
100
80
60
40
20
250
200
150
100
50
0
0
0
25
50
75
100
125
150
175
0
TC - Case Temperature - °C
25
50
75
100
125
150
175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
ID(Pulse) = 640 A
100
RDS(ON) Limited
(VGS = 10 V)
=1
00
µs
1m
s
ID(DC) = 160 A
10
m
10
s
ID - Drain Current - A
PW
Power Dissipation Limited
Secondary Brakedown Limited
1
DC
TC = 25°C
Single Pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - °C/W
1000
Rth(ch-A) = 83.3°C/W
100
10
1
Rth(ch-C) = 0.60°C/W
0.1
Single pulse
0.01
0.1 m
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
R07DS0543EJ0100 Rev.1.00
Sep 23, 2011
Page 3 of 6
NP160N04TUK
Chapter Title
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
700
1000
500
400
300
200
VGS = 10 V
Pulsed
100
0
0.0
TA = −55°C
25°C
80°C
150°C
175°C
100
ID - Drain Current - A
ID - Drain Current - A
600
10
1
0.1
VDS = 10 V
Pulsed
0.01
0.001
0.2
0.4
0.6
0.8
1.0
0
2
4
5
6
GATE TO SOURCE THRESHOLD VOLTAGE
FORWARD TRANSFER ADMITTANCE vs. DRAIN
vs. CHANNEL TEMPERATURE
CURRENT
4
VDS = VGS
ID = 250 μA
3
2
1
0
-100
-50
0
50
100
150
1000
TA = −55°C
25°C
85°C
150°C
175°C
100
10
VDS = 5 V
Pulsed
1
1
200
10
100
1000
ID - Drain Current - A
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
GATE TO SOURCE VOLTAGE
4
3
2
1
VGS = 10 V
Pulsed
0
1
10
100
ID - Drain Current - A
R07DS0543EJ0100 Rev.1.00
Sep 23, 2011
1000
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
3
VGS - Gate to Source Voltage - V
| yfs | - Forward Transfer Admittance - S
VGS(th) - Gate to Source Threshold Voltage - V
VDS - Drain to Source Voltage - V
1
4
ID = 80 A
Pulsed
3
2
1
0
0
5
10
15
20
VGS - Gate to Source Voltage - V
Page 4 of 6
NP160N04TUK
Chapter Title
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
4
VGS = 10 V
ID = 80 A
Pulsed
3
Ciss, Coss, Crss - Capacitance - pF
2
1
0
-100
Ciss
1000
Coss
0
50
100
150
0.1
200
1
Tch - Channel Temperature - °C
1000
35
VDS - Drain to Source Voltage - V
td(on)
tr
10
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
td(off)
100
10
VDS - Drain to Source Voltage - V
VDD = 20 V
VGS = 10 V
RG = 0 Ω
tf
14
VDD = 32 V
20 V
8V
30
25
12
10
20
8
VGS
15
6
10
4
VDS
5
1
10
100
0
1000
2
ID = 160 A
0
1
0.1
20
40
60
80
100
120
0
140
QG - Gate Charge - nC
ID - Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
0V
VGS = 10 V
100
trr - Reverse Recovery Time - ns
IF - Diode Forward Current - A
Crss
VGS = 0 V
f = 1 MHz
100
-50
SWITCHING CHARACTERISTICS
td(on), tr, td(off), tf - Switching Time - ns
10000
10
1
Pulsed
0.1
10
di/dt = 100A/µs
VGS = 0 V
1
0
0.2
0.4
0.6
0.8
1
1.2
VF(S-D) - Source to Drain Voltage - V
R07DS0543EJ0100 Rev.1.00
Sep 23, 2011
1.4
0.1
1
10
100
1000
IF - Drain Current - A
Page 5 of 6
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
CHANNEL TEMPERATURE
NP160N04TUK
Chapter Title
Package Drawing (Unit: mm)
10.0 ± 0.2
4.45 ± 0.2
1.3 ± 0.2
1.27 TYP.
0.025 to 0.25
0.5 ± 0
.2
0 to 8°
1 2 34 56 7
2.54 ± 0.25
0.6 ± 0.15
14.85 ± 0.5
8
9.15 ± 0.2
7.6 TYP.
8.4 TYP.
1.2 ± 0.3
TO-263-7pin (MP-25ZT) (Mass: 1.5 g TYP.)
2.5
0.25
1. Gate
2, 3, 5, 6, 7. Source
4, 8. Fin (Drain)
10.0 ± 0.2
Equivalent Circuit
Drain
Body
Diode
Gate
Source
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static
electricity as much as possible, and quickly dissipate it once, when it has occurred.
R07DS0543EJ0100 Rev.1.00
Sep 23, 2011
Page 6 of 6
Revision History
NP160N04TUK Data Sheet
Rev.
Date
Page
1.00
Sep 23, 2011
−
Description
Summary
First Edition Issued
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