ON NP2300SBMCT3G 80a, ultra low capacitance tspd Datasheet

NP-SBMC Series
80A, Ultra Low Capacitance
TSPD
The NP−SBMC series of Low Capacitance Thyristor Surge
Protection Devices (TSPD) protect sensitive electronic equipment
from transient overvoltage conditions. Due to their ultra low off−state
capacitance (Co), they offer minimal signal distortion for high speed
equipment such as ADSL2+, VDSL and T1/E1 circuits. The low
nominal offstate capacitance translates into the extremely low
differential capacitance offering superb linearity with applied voltage
or frequency. These reliable silicon devices are also a suitable
alternative to GDT protectors.
The NP−SBMC Series helps designers to comply with the various
regulatory standards and recommendations including:
GR−1089−CORE, IEC 61000−4−5, ITU K.20/K.21/K.45, IEC 60950,
TIA−968−A, FCC Part 68, EN 60950, UL 1950.
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ULTRA LOW CAPACITANCE
BIDIRECTIONAL SURFACE
MOUNT THYRISTOR
80A, 10x1000ms SURGE
Features
•
•
•
•
•
•
T
Ultra Low − Micro Capacitance
Low Leakage (Transparent)
High Surge Current Capabilities
Precise Turn on Voltages
Low Voltage Overshoot
These are Pb−Free Devices
R
SMB
JEDEC DO−214AA
CASE 403C
Typical Applications
• xDSL Central Office and Customer Premise
• T1/E1
• Other Broadband High Speed Data Transmission Equipment
MARKING DIAGRAM
ELECTRICAL CHARACTERISTICS
VDRM
V(BO)
CO, 2 V,
1 MHz
CO, 50 V,
1 MHz
V
V
pF (Max)
pF (Max)
NP0640SBMCT3G
$58
$77
21
10
NP0720SBMCT3G
$65
$88
21
10
NP0900SBMCT3G
$75
$98
21
10
NP1100SBMCT3G
$90
$130
21
10
NP1300SBMCT3G
$120
$160
21
10
NP1500SBMCT3G
$140
$180
21
10
NP1800SBMCT3G
$170
$220
21
10
NP2100SBMCT3G
$180
$240
21
10
NP2300SBMCT3G
$190
$260
21
10
NP2600SBMCT3G
$220
$300
21
10
NP3100SBMCT3G
$275
$350
21
10
NP3500SBMCT3G
$320
$400
21
10
Device
G in part number indicates RoHS compliance
Other protection voltages are available upon request
Symmetrical Protection − Values the same in both negative and positive
excursions
(See V−I Curve on page 3)
© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 1
1
AYWW
xxxBMG
G
A
Y
WW
xxx
= Assembly Location
= Year
= Work Week
= Specific Device Code
(NPxxx0SBMC)
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NPxxx0SBMCT3G
SMB
(Pb−Free)
2500 /Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NP3100SBMC/D
NP−SBMC Series
SURGE RATINGS
IPPS
A
ITSM
A
di/dt
Waveform (ms)
2x10
8x20
10x160
10x560
10x360
10x1000
5x310
0.1 s
60 Hz
A/ms
Value
250
250
150
100
125
80
100
30
500
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
VDRM
IPPS
ITSM
Rating
Repetitive peak off−state voltage: Rated maximum
(peak) continuous voltage that may be applied in the
off−state conditions including all dc and repetitive
alternating voltage components.
Nonrepetitive peak pulse current: Rated maximum
value of peak impulse pulse current that may be
applied.
Nonrepetitive peak on−state current: Rated
maximum (peak) value of ac power frequency
on−state surge current which may be applied for a
specified time or number of ac cycles.
Value
Unit
NP0640SBMCT3G
$58
V
NP0720SBMCT3G
$65
NP0900SBMCT3G
$75
NP1100SBMCT3G
$90
NP1300SBMCT3G
$120
NP1500SBMCT3G
$140
NP1800SBMCT3G
$170
NP2100SBMCT3G
$180
NP2300SBMCT3G
$190
NP2600SBMCT3G
$220
NP3100SBMCT3G
$275
NP3500SBMCT3G
$320
2x10 ms, GR−1089−CORE
250
8x20 ms, IEC−61000−4−5
250
10x160 ms, TIA−968−A
150
10x560 ms, TIA−968−A
100
10x360 ms, GR−1089−CORE
125
10x1000 ms, GR−1089−CORE
80
5x310 ms, ITU−K.20/K.21/K.45
100
0.1s, 50/60 Hz, full sine wave
30
A
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
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2
NP−SBMC Series
ELECTRICAL CHARACTERISTICS TABLE (TA = 25°C unless otherwise noted)
Symbol
V(BO)
I(BO)
IH
IDRM
VT
Rating
Min
Breakover voltage: The maximum voltage across the device in or at the
breakdown region.
VDC = 1000 V, dv/dt = 100 V/ms
Max
Unit
NP0640SBMCT3G
Typ
$77
V
NP0720SBMCT3G
$88
NP0900SBMCT3G
$98
NP1100SBMCT3G
$130
NP1300SBMCT3G
$160
NP1500SBMCT3G
$180
NP1800SBMCT3G
$220
NP2100SBMCT3G
$240
NP2300SBMCT3G
$260
NP2600SBMCT3G
$300
NP3100SBMCT3G
$350
NP3500SBMCT3G
$400
Breakover Current: The instantaneous current flowing at the breakover voltage.
Holding Current: The minimum current required to maintain the device in the on−state.
Off−state Current: The dc value of current that results from the application of the off−state voltage
800
150
mA
VD = 50 V
2
VD = VDRM
5
On−state Voltage: The voltage across the device in the on−state condition.
IT = 2.2 A (pk), PW = 300 ms, DC = 2%
dv/dt
Critical rate of rise of off−state voltage: The maximum rate of rise of voltage (below VDRM) that
will not cause switching from the off−state to the on−state.
Linear Ramp between 0.1 VDRM and 0.9 VDRM
di/dt
Critical rate of rise of on−state current: rated value of the rate of rise of current which the device
can withstand without damage.
CO
Off−state Capacitance
f = 1.0 MHz, Vd = 1.0 VRMS, VD = −2 Vdc
mA
4
±5
mA
V
kV/ms
±500
A/ms
NP0640SBMCT3G
21
pF
NP0720SBMCT3G
21
NP0900SBMCT3G
21
NP1100SBMCT3G
21
NP1300SBMCT3G
21
NP1500SBMCT3G
21
NP1800SBMCT3G
21
NP2100SBMCT3G
21
NP2300SBMCT3G
21
NP3100SBMCT3G
21
NP3500SBMCT3G
21
THERMAL CHARACTERISTICS
Symbol
TSTG
TJ
R0JA
Rating
Value
Unit
Storage Temperature Range
−65 to +150
°C
Junction Temperature
−40 to +150
°C
90
°C/W
Thermal Resistance: Junction−to−Ambient Per EIA/JESD51−3, PCB = FR4 3”x4.5”x0.06”
Fan out in a 3x3 inch pattern, 2 oz copper track.
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3
ELECTRICAL PARAMETER/RATINGS DEFINITIONS
+I
Symbol
Parameter
IPPS
VDRM
Repetitive Peak Off−state Voltage
ITSM
V(BO)
Breakover Voltage
IT
IDRM
Off−state Current
IH
I(BO)
Breakover Current
IH
Holding Current
VT
On−state Voltage
IT
On−state Current
ITSM
Nonrepetitive Peak On−state Current
IPPS
Nonrepetitive Peak Impulse Current
VD
Off−state Voltage
ID
Off−state Current
−Voltage
On−State Region
NP−SBMC Series
VT
Off−State Region
I(BO)
ID
IDRM
+Voltage
VD
V(BO)
VDRM
−I
Figure 1. Voltage Current Characteristics of TSPD
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4
NP−SBMC Series
Ipp − PEAK PULSE CURRENT − %Ipp
PEAK ON−STATE CURRENT
100
10
1
0.1
1
10
100
CURRENT DURATION (s)
1000
tr = rise time to peak value
tf = decay time to half value
Peak
Value
100
Half Value
50
0
0 tr
tf
TIME (ms)
Figure 2. Nonrepetitive On−State Current vs. Time
(ITSM)
Figure 3. Nonrepetitive On−State Impulse vs.
Waveform (IPPS)
Detailed Operating Description
The TSPD or Thyristor Surge Protection Device are
specialized silicon based overvoltage protectors, used to
protect sensitive electronic circuits from damaging
overvoltage transient surges caused by induced lightning
and powercross conditions.
The TSPD protects by switching to a low on state voltage
when the specified protection voltage is exceeded. This is
known as a “crowbar” effect. When an overvoltage occurs,
the crowbar device changes from a high−impedance to a
low−impedance state. This low−impedance state then offers
a path to ground, shunting unwanted surges away from the
sensitive circuits.
This crowbar action defines the TSPD’s two states of
functionality: Open Circuit and Short Circuit.
Open Circuit – The TSPD must remain transparent during
normal circuit operation. The device looks like an open
across the two wire line.
Short Circuit – When a transient surge fault exceeds the
TSPD protection voltage threshold, the devices switches on,
and shorts the transient to ground, safely protecting the
circuit.
+
I(OP)
+
Protected
Equipment
−
V(OP) TSPD
−
The electrical characteristics of the TSPD help the user to
define the protection threshold for the circuit. During the
open circuit condition the device must remain transparent;
this is defined by the IDRM. The IDRM should be as low as
possible. The typical value is less than 5 mA.
The circuit operating voltage and protection voltage must
be understood and considered during circuit design. The
V(BO) is the guaranteed maximum voltage that the protected
circuit will see, this is also known as the protection voltage.
The VDRM is the guaranteed maximum voltage that will
keep the TSPD in its normal open circuit state. The TSPD
V(BO) is typically a 20−30% higher than the VDRM. Based
on these characteristics it is critical to choose devices which
have a VDRM higher than the normal circuit operating
voltage, and a V(BO) which is less than the failure threshold
of the protected equipment circuit. A low on−state voltage
Vt allows the TSPD to conduct large amounts of surge
current (500 A) in a small package size.
Once a transient surge has passed and the operating
voltage and currents have dropped to their normal level the
TSPD changes back to its open circuit state.
•TSPD looks like an open
•Circuit operates normally
Normal Circuit Operation
I
+ (Fault)
V(Fault) TSPD
−
+
I(Fault) Protected
Equipment
−
Operation during a Fault
•Fault voltage greater than Vbo occurs
•TSPD shorts fault to ground
•After short duration events the O/V
switches back to an open condition
•Worst case (Fail/Safe)
•O/V permanent short
•Equipment protected
Figure 4. Normal and Fault Conditions
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5
NP−SBMC Series
Transient Surge
DEVICE SELECTION
Equipment Failure Threshold
Off−State Voltage VDRM
When selecting a TSPD use the following key selection
parameters.
Choose a TSPD that has an Off−State Voltage greater than
the normal system operating voltage. The protector should
not operate under these conditions:
Example:
Volts
TSPD Protection Voltage
Upper Limit
Normal System
Operating Voltage
TSPD Transparent
TSPD Protection
TSPD Transparent
(open)
(short)
(open)
Vbat = 48 Vmax
Vring = 150 Vrms = 150*1.414 = 212 V peak
VDRM should be greater than the peak value of these two
components:
Time
VDRM > 212 + 48 = 260 VDRM
Figure 5. Protection During a Transient Surge
Breakover Voltage V(BO)
TSPD’s are useful in helping designers meet safety and
regulatory standards in Telecom equipment including
GR−1089−CORE, ITU−K.20, ITU−K.21, ITU−K.45, FCC
Part 68, UL1950, and EN 60950.
ON Semiconductor offers a full range of these products in
the NP series product line.
Verify that the TSPD Breakover Voltage is a value less
than the peak voltage rating of the circuit it is protecting.
Example: Relay breakdown voltage, SLIC maximum
voltage, or coupling capacitor maximum rated voltage.
Peak Pulse Current Ipps
Choose a Peak Pulse current value which will exceed the
anticipated surge currents in testing. In some cases the 100 A
“C” series device may be needed when little or no series
resistance is used. When a series current limiter is used in the
circuit a lower current level of “A” or “B” may be used. To
determine the peak current divide the maximum surge
current by the series resistance.
Hold Current (IH)
The Hold Current must be greater than the maximum
system generated current. If it is not then the TSPD will
remain in a shorted condition, even after a transient event
has passed.
TYPICAL APPLICATION
Tip
NP3100SBMC
Voice
NP3100SBMC
Ring
DSL
Figure 6. ADSL
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6
NP−SBMC Series
PACKAGE DIMENSIONS
SMB
CASE 403C−01
ISSUE A
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
A
D
INCHES
DIM MIN
MAX
A
0.160
0.180
B
0.130
0.150
C
0.075
0.095
D
0.077
0.083
H 0.0020 0.0060
J
0.006
0.012
K
0.030
0.050
P
0.020 REF
S
0.205
0.220
B
C
K
J
P
MILLIMETERS
MIN
MAX
4.06
4.57
3.30
3.81
1.90
2.41
1.96
2.11
0.051
0.152
0.15
0.30
0.76
1.27
0.51 REF
5.21
5.59
H
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NP3100SBMC/D
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