DATA SHEET MOS FIELD EFFECT TRANSISTOR NP34N055HHE, NP34N055IHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES PART NUMBER PACKAGE NP34N055HHE TO-251 NP34N055IHE TO-252 • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 19 mΩ MAX. (VGS = 10 V, I D = 17 A) • Low Ciss : Ciss = 1600 pF TYP. • Built-in gate protection diode (TO-251) ABSOLUTE MAXIMUM RATINGS (T A = 25 °C) Drain to Source Voltage VDSS 55 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±34 A ID(pulse) ±136 A Total Power Dissipation (TA = 25 °C) PT 1.2 W Total Power Dissipation (TC = 25 °C) PT 88 W IAS 34 / 27 / 10 A EAS 11 / 72 / 100 mJ Channel Temperature Tch 175 °C Storage Temperature Tstg –55 to + 175 °C Drain Current (Pulse) Note1 Single Avalanche Current Note2 Single Avalanche Energy Note2 (TO-252) Notes 1. PW ≤ 10 µ s, Duty cycle ≤ 1 % 2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V (see Figure 4.) THERMAL RESISTANCE Channel to Case Rth(ch-C) 1.70 °C/W Channel to Ambient Rth(ch-A) 125 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14153EJ3V0DS00 (3rd edition) Date Published March 2001 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 1999,2000 NP34N055HHE, NP34N055IHE ELECTRICAL CHARACTERISTICS (T A = 25 °C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT 15 19 mΩ 2.0 3.0 4.0 V 6 12 Drain to Source On-state Resistance RDS(on) VGS = 10 V, ID = 17 A Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µ A Forward Transfer Admittance | yfs | VDS = 10 V, ID = 17 A Drain Leakage Current IDSS VDS = 55 V, VGS = 0 V 10 µA Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA Input Capacitance Ciss VDS = 25 V 1600 2400 pF Output Capacitance Coss VGS = 0 V 250 380 pF Reverse Transfer Capacitance Crss f = 1 MHz 120 220 pF Turn-on Delay Time td(on) ID = 17 A 21 47 ns VGS(on) = 10 V 15 38 ns VDD = 28 V 35 70 ns tf RG = 1 Ω 12 29 ns Total Gate Charge QG ID = 34 A 30 45 nC Gate to Source Charge QGS VDD = 44 V 9 nC Gate to Drain Charge QGD VGS = 10 V 12 nC VF(S-D) IF = 34 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 34 A, VGS = 0 V 40 ns Reverse Recovery Charge Qrr di/dt = 100 A/µ s 58 nC Rise Time tr Turn-off Delay Time td(off) Fall Time Body Diode Forward Voltage TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω S VGS RL Wave Form RG PG. VDD VGS 0 VGS(on) 10 % 90 % VDD VDS 90 % BVDSS IAS VDS VDS ID Starting Tch τ τ = 1 µs Duty Cycle ≤ 1 % TEST CIRCUIT 3 GATE CHARGE PG. 2 50 Ω 10 % 10 % 0 Wave Form VDD D.U.T. IG = 2 mA 90 % VDS VGS 0 RL VDD Data Sheet D14153EJ3V0DS td(on) tr ton td(off) tf toff NP34N055HHE, NP34N055IHE TYPICAL CHARACTERISTICS (T A = 25°C) Figure2. TOTAL POWER DISSIPATION vs. CASE TEMPERATURE Figure1. DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 140 100 80 60 40 20 0 0 25 50 75 120 100 80 60 40 20 0 100 125 150 175 200 25 0 50 TC - Case Temperature - ˚C ★ Figure3. FORWARD BIAS SAFE OPERATING AREA 120 DC 1m s PW 10 0µ s EAS- Single Avalanche Energy - mJ ID(DC) =1 0µ s Po Lim we ite r Di d ss ipa tio n 10 1 0.1 0.1 TC = 25˚C Single Pulse 1 10 100 mJ 100 72 mJ 80 IAS = 10 A 27 A 34 A 60 40 20 11 mJ 0 25 100 VDS - Drain to Source Voltage - V 50 75 100 125 150 175 Starting Tch - Starting Channel Temperature - ˚C Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W ID - Drain Current - A ID(pulse) d ite im 0 V) )L (on =1 DS S R VG (at 100 125 150 175 200 Figure4. SINGLE AVALANCHE ENERGY DERATING FACTOR 1000 100 75 TC - Case Temperature - ˚C 1000 Rth(ch-A) = 125 ˚C/W 100 10 Rth(ch-C) = 1.70 ˚C/W 1 0.1 0.01 10 µ Single Pulse TC = 25˚C 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D14153EJ3V0DS 3 NP34N055HHE, NP34N055IHE Figure6. FORWARD TRANSFER CHARACTERISTICS 100 Figure7. DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed Pulsed ID - Drain Current - A 200 ID - Drain Current - A 10 TA = 175˚C 150˚C 75˚C 25˚C −55˚C 1 0.1 160 120 VGS =10 V 80 40 0.01 1 2 3 5 4 0 6 0.1 0.1 10 1 100 RDS(on) - Drain to Source On-state Resistance - mΩ ID - Drain Current - A 4 Figure10. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed 30 20 VGS = 10 V 10 0 1 10 100 1000 RDS(on) - Drain to Source On-state Resistance - mΩ TA = 175˚C 75˚C 25˚C −55˚C Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 40 Pulsed 35 30 25 ID = 17 A 20 15 10 5 0 0 5 10 15 20 VGS - Gate to Source Voltage - V Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE VGS(th) - Gate to Source Threshold Voltage - V | yfs | - Forward Transfer Admittance - S 10 0.01 0.01 8 6 VDS - Drain to Source Voltage - V Figure8. FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 VDS=10V Pulsed 1 4 2 0 VGS - Gate to Source Voltage - V VDS = VGS ID = 250 µ A 4.0 3.0 2.0 1.0 0 −50 ID - Drain Current - A 0 50 100 150 Tch - Channel Temperature - ˚C Data Sheet D14153EJ3V0DS Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 45 Pulsed 40 35 30 25 VGS = 10 V 20 15 10 5 Figure13. SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 Pulsed ISD - Diode Forward Current - A VGS = 10 V 10 VGS = 0 V 1 ID = 17 A 0 −50 50 0 100 0.1 0 150 Figure15. SWITCHING CHARACTERISTICS VGS = 0 V f = 1 MHz Ciss 1000 Coss 100 Crss 10 0.1 1 10 td(on), tr, td(off), tf - Switching Time - ns 10000 1000 tf 100 td(off) td(on) tr 10 1 0.1 100 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns di/dt = 100 A/µs VGS = 0 V 100 10 80 16 70 14 10 100 12 60 VDD = 44 V 28 V 11 V 50 10 VGS 40 8 6 30 4 20 VDS 2 10 ID = 34 A 0 1 100 Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS Figure16. REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 0.1 10 1 ID - Drain Current - A VDS - Drain to Source Voltage - V 1000 1.5 1.0 0.5 VSD - Source to Drain Voltage - V Tch - Channel Temperature - ˚C Figure14. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss, Coss, Crss - Capacitance - pF 100 0 4 8 12 16 20 24 28 32 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ NP34N055HHE, NP34N055IHE 0 QG - Gate Charge - nC IF - Drain Current - A Data Sheet D14153EJ3V0DS 5 NP34N055HHE, NP34N055IHE PACKAGE DRAWINGS (Unit : mm) 1)TO-251 (MP-3) 2)TO-252 (MP-3Z) 2.3±0.2 2.3 TYP. 10.0 MAX. 0.9 MAX. 2.3 TYP. 0.8 MAX. 0.7 TYP. 1.1±0.2 0.8 TYP. 2.3 TYP. 0.75 TYP. 2.3 TYP. 0.5+0.2 −0.1 0.5±0.1 2.0 MIN. 0.8 TYP. 0.5+0.2 −0.1 5.5±0.2 4.3 MAX. 5.5±0.2 7.0 MIN. 13.7 MIN. 1.6±0.2 5.0±0.2 1.1±0.2 2.3±0.2 6.5±0.2 1.0 MIN. 1.8 TYP. 0.5±0.1 1.5+0.2 −0.1 5.0±0.2 1.5+0.2 −0.1 6.5±0.2 EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 6 Data Sheet D14153EJ3V0DS NP34N055HHE, NP34N055IHE [MEMO] Data Sheet D14153EJ3V0DS 7 NP34N055HHE, NP34N055IHE • The information in this document is current as of March, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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