Renesas NP60N04MUK Mos field effect transistor Datasheet

Preliminary Data Sheet
NP60N04MUK, NP60N04NUK
MOS FIELD EFFECT TRANSISTOR
R07DS0597EJ0100
Rev.1.00
Jan 11, 2012
Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
 Super low on-state resistance
RDS(on) = 4.3 m MAX. (VGS = 10 V, ID = 30 A)
 Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V)
 Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP60N04MUK-S18-AY *1
Lead Plating
Pure Sn (Tin)
Packing
Tube 50 p/tube
NP60N04NUK-S18-AY *1
Note:
Package
TO-220 (MP-25K)
TO-262 (MP-25SK)
*1 Pb-free (This product does not contain Pb in the external electrode)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) *1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Repetitive Avalanche Current *2
Repetitive Avalanche Energy *2
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAR
EAR
Ratings
40
20
60
240
105
1.8
175
–55 to 175
28
78
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Notes: *1 TC = 25°C, PW  10 s, Duty Cycle  1%
*2 RG = 25 , VGS = 20  0 V
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R07DS0597EJ0100 Rev.1.00
Jan 11, 2012
Rth(ch-C)
Rth(ch-A)
1.43
83.3
°C/W
°C/W
Page 1 of 6
NP60N04MUK, NP60N04NUK
Electrical Characteristics (TA = 25°C)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance *1
Drain to Source On-state Resistance *1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage *1
Reverse Recovery Time
Reverse Recovery Charge
Note:
Symbol
IDSS
IGSS
VGS(th)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
MIN.
—
—
2.0
22
—
—
—
—
—
—
—
—
—
—
—
—
—
—
TYP.
—
—
3.0
44
3.6
2450
340
140
19
9
45
7
42
11
11
0.9
44
40
MAX.
1
100
4.0
—
4.3
3680
510
260
50
30
90
20
63
—
—
1.5
—
—
Unit
A
nA
V
S
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Conditions
VDS = 40 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VDS = VGS, ID = 250 A
VDS = 5 V, ID = 30 A
VGS = 10 V, ID = 30 A
VDS = 25 V
VGS = 0 V
f = 1 MHz
VDD = 20 V, ID = 30 A
VGS = 10 V
RG = 0 
VDD = 32 V
VGS = 10 V
ID = 60 A
IF = 60 A, VGS = 0 V
IF = 60 A, VGS = 0 V
di/dt = 100 A/s
*1 Pulsed test
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
PG.
VGS = 20 → 0 V
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
50 Ω
RL
Wave Form
RG
PG.
VDD
VGS
VGS
VDD
0
VGS
10%
90%
VDS
90%
ID
IAS
90%
VDS
VGS
0
BVDSS
VDS
10%
0
10%
Wave Form
VDS
VDD
Starting Tch
τ
τ = 1 μs
Duty Cycle ≤ 1%
td(on)
tr
ton
td(off)
tf
toff
TEST CIRCUIT 3 GATE CHARGE
PG.
D.U.T.
IG = 2 mA
RL
50 Ω
VDD
R07DS0597EJ0100 Rev.1.00
Jan 11, 2012
Page 2 of 6
NP60N04MUK, NP60N04NUK
Typical Characteristics (TA = 25°C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
120
PT - Total Power Disslpation - W
dT - Percentage of Rated Power - %
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
100
80
60
40
20
0
0
25
50
75
100
125
150
100
80
60
40
20
0
175
0
25
50
75
100
125
150
175
TC - Case Temperature - °C
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
PW
=1
ID(DC) = 60 A
Power Dissipation Limited
PW
s
0m
=1
Secondary Breakdown Limited
ms
1
μs
=1
10
00
PW
ID - Drain Current - A
ID(Pulse) = 240 A
RDS(ON) Limited
100 (VGS=10 V)
0.1
0.1
DC
TC = 25°C
Single Pulse
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(t) - Transient Thermal Resistance - °C/W
1000
Rth(ch-A) = 83.3°C/W
100
10
Rth(ch-C) = 1.43°C/W
1
0.1
Single pulse
0.01
0.1 m
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
R07DS0597EJ0100 Rev.1.00
Jan 11, 2012
Page 3 of 6
NP60N04MUK, NP60N04NUK
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
100
300
ID - Drain Curent - A
10
200
150
100
50
RDS(on) - Drain to Source On-State Resistance - mΩ
0
0.2
0.4
0.6
0.8
1
0.1
0.001
1.0
VDS = 10 V
Pulsed
0
1
2
3
4
5
6
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
4
|yfs| - Forward Transfer Admittance - S
VGS(th) - Gate to Source Threshold Voltage - V
0
TA = –55°C
25°C
85°C
150°C
175°C
0.01
VGS = 10 V
Pulsed
3
2
1
VDS = VGS
ID = 250 μA
0
–100
–50
0
50
100
150
200
100
TA = –55°C
25°C
85°C
150°C
175°C
10
VDS = 5 V
Pulsed
1
0.1
1
10
100
Tch - Channel Temperature - °C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
8
7
6
5
4
3
2
VGS = 10 V
Pulsed
1
0
1
10
100
ID - Drain Current - A
R07DS0597EJ0100 Rev.1.00
Jan 11, 2012
1000
RDS(on) - Drain to Source On-State Resistance - mΩ
ID - Drain Current - A
250
8
7
6
5
4
3
2
ID = 30 A
Pulsed
1
0
0
5
10
15
20
VGS - Gate to Source Voltage - V
Page 4 of 6
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
8
7
6
5
4
3
2
VGS = 10 V
ID = 30 A
Pulsed
1
0
–100
–50
0
50
100
150
1000
Coss
VGS = 0 V
f = 1 MHz
100
0.1
200
Crss
1
10
100
Tch - Channel Temperature - °C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
35
1000
100
td(off)
td(on)
tr
10
tf
VDD = 20 V
VGS = 10 V
RG = 0 Ω
1
0.1
1
10
14
30
12
VDD = 32 V
20 V
8V
25
10
8
20
6
15
VGS
4
10
VDS
5
0
100
0
5
10
15
20
ID = 60 A
25
30
35
40
ID - Drain Current - A
QG- Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
VGS = 0 V
10
1
Pulsed
0
0.2
0.4
0.6
0.8
1.0
VF(S-D) - Source to Drain Voltage - V
R07DS0597EJ0100 Rev.1.00
Jan 11, 2012
1.2
trr - Reverse Recovery Time - ns
VGS = 10 V
0.1
2
0
45
100
1000
IF - Diode Forward Current - A
Ciss
VGS - Gate to Source Voltage - V
Ciss, Coss, Crss - Capacitance -pF
10000
VDS - Drain to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
RDS(on) - Drain to Source On-State Resistance - mΩ
NP60N04MUK, NP60N04NUK
10
di/dt = 100 A/μs
VGS = 0 V
1
0.1
1
10
100
IF - Drain Current - A
Page 5 of 6
NP60N04MUK, NP60N04NUK
Package Drawing (Unit: mm)
TO-220 (MP-25K) (Mass: 1.9 g TYP.)
3
0.8±0.1
2.54 TYP.
2.54 TYP.
1.27±0.2
3.1±0.2
2
13.7±0.3
1
6.3±0.3
4
4.45±0.2
1.3±0.2
15.9 MAX.
3.8±0.2
2.8±0.3
10.0±0.2
0.5±0.2
2.5±0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
3
10.1±0.3
2
13.7±0.3
1
4.45±0.2
1.3±0.2
0.8±0.1
2.54 TYP.
2.54 TYP.
1.27±0.2
3.1±0.3
4
8.9±0.2
10.0±0.2
1.2±0.3
TO-262 (MP-25SK) (Mass: 1.8 g TYP.)
0.5±0.2
2.5±0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Equivalent Circuit
Drain
Body
Diode
Gate
Source
Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred.
R07DS0597EJ0100 Rev.1.00
Jan 11, 2012
Page 6 of 6
Revision History
Rev.
1.00
Date
Jan 11, 2012
NP60N04MUK, NP60N04NUK Data Sheet
Description
Summary
Page
—
First Edition Issued
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