Renesas NP82N055NUG-S18-AY Mos field effect transistor Datasheet

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP82N055MUG, NP82N055NUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP82N055MUG and NP82N055NUG are N-channel MOS Field Effect Transistors designed for high current
switching applications.
ORDERING INFORMATION
PART NUMBER
NP82N055MUG-S18-AY
NP82N055NUG-S18-AY
LEAD PLATING
PACKING
PACKAGE
Tube
TO-220 (MP-25K) typ. 1.9 g
Note
Note
Pure Sn (Tin)
50 p/tube
TO-262 (MP-25SK) typ. 1.8 g
Note Pb-free (This product does not contain Pb in the external electrode.)
FEATURES
(TO-220)
• Non logic level
• Super low on-state resistance
RDS(on) = 6.0 mΩ MAX. (VGS = 10 V, ID = 41 A)
• High current rating
ID(DC) = ±82 A
• Low input capacitance
Ciss = 6400 pF TYP.
• Designed for automotive application and AEC-Q101 qualified
(TO-262)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Note1
Drain Current (pulse)
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Note2
Repetitive Avalanche Current
Note2
Repetitive Avalanche Energy
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAR
EAR
55
±20
±82
±328
143
1.8
175
−55 to +175
38
144
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, RG = 25 Ω
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.05
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19804EJ1V0DS00 (1st edition)
Date Published May 2009 NS
Printed in Japan
2009
NP82N055MUG, NP82N055NUG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
Zero Gate Voltage Drain Current
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
IDSS
VDS = 55 V, VGS = 0 V
1
μA
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±100
nA
Gate to Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
2.0
| yfs |
VDS = 5 V, ID = 41 A
19
RDS(on)
VGS = 10 V, ID = 41 A
Forward Transfer Admittance
Note
Drain to Source On-state Resistance
Note
4.0
V
54
S
4.8
6.0
mΩ
6400
9600
pF
Input Capacitance
Ciss
VDS = 25 V,
Output Capacitance
Coss
VGS = 0 V,
465
700
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
275
500
pF
Turn-on Delay Time
td(on)
VDD = 28 V, ID = 41 A,
40
90
ns
Rise Time
tr
VGS = 10 V,
93
240
ns
Turn-off Delay Time
td(off)
RG = 0 Ω
72
150
ns
Fall Time
tf
10
30
ns
Total Gate Charge
QG
VDD = 44 V,
106
160
nC
Gate to Source Charge
QGS
VGS = 10 V,
29
nC
nC
Gate to Drain Charge
QGD
ID = 82 A
35
VF(S-D)
IF = 82 A, VGS = 0 V
0.9
Reverse Recovery Time
trr
IF = 82 A, VGS = 0 V,
42
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/μs
57
nC
Body Diode Forward Voltage
Note
1.5
V
Note Pulsed test
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
D.U.T.
L
50 Ω
PG.
VGS = 20 → 0 V
TEST CIRCUIT 2 SWITCHING TIME
RL
RG
PG.
VDD
VGS
VGS
Wave Form
0
VGS
10%
90%
VDD
VDS
90%
IAS
VDS
ID
VDS
τ
τ = 1 μs
Duty Cycle ≤ 1%
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG.
2
50 Ω
0
10%
10%
tr
td(off)
Wave Form
VDD
Starting Tch
90%
VDS
VGS
0
BVDSS
RL
VDD
Data Sheet D19804EJ1V0DS
td(on)
ton
tf
toff
NP82N055MUG, NP82N055NUG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
160
140
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
120
100
80
60
40
20
120
100
80
60
40
20
0
0
0
25
50
75
100
125
150
175
0
25
TC - Case Temperature - °C
50
75
100
125
150
175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
o
S(
100
n)
RD GS
(V
ID(Pulse)
d
it e
Lim V )
0
i
=1
PW
ID(DC)
1i 0
0
μs
i
1i m
1i 0
i
m
s
ary
nd
Br
wn
d
it e
Lim
d
it e
im
nL
o
ed
ak
t io
ip a
i ss
1
s
co
Se
D
er
10
=
DC
w
Po
TC = 25°C
Single Pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
rth(t) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
1000
Rth(ch-A) = 83.3°C/W
10
1
Rth(ch-C) = 1.05°C/W
0.1
Single Pulse
0.01
100 μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D19804EJ1V0DS
3
NP82N055MUG, NP82N055NUG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
1000
350
250
200
150
100
10
TA = 175°C
150°C
125°C
75°C
1
0.1
0
0.001
0
1
2
3
4
5
0
6
1
2
4
5
6
7
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
4
3.5
3
2.5
2
1.5
1
VDS = VGS
ID = 250 μA
0.5
0
-75
-25
25
75
125
175
| yfs | - Forward Transfer Admittance - S
VGS - Gate to Source Voltage - V
100
TA = −55°C
−25°C
25°C
75°C
125°C
10
1
0.1
1
12
8
4
0
1
10
100
100
1000
1000
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - mΩ
VGS = 10 V
Pulsed
0.1
10
ID - Drain Current - A
20
16
150°C
175°C
VDS = 5 V
Pulsed
225
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
RDS(on) - Drain to Source On-state Resistance - mΩ
3
VDS - Drain to Source Voltage - V
Tch - Channel Temperature - °C
ID - Drain Current - A
4
−55°C
−25°C
25°C
0.01
VGS = 10 V
Pulsed
50
VGS(th) - Gate to Source Threshold Voltage - V
VDS = 10 V
Pulsed
100
ID - Drain Current - A
ID - Drain Current - A
300
30
Pulsed
ID = 82 A
41 A
16.4 A
20
10
0
0
4
8
12
16
VGS - Gate to Source Voltage - V
Data Sheet D19804EJ1V0DS
20
NP82N055MUG, NP82N055NUG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
20
10000
16
12
8
VGS = 10 V
ID = 41 A
Pulsed
4
Ciss, Coss, Crss - Capacitance - pF
0
Ciss
1000
Coss
100
-75
-25
25
75
125
175
225
0.1
SWITCHING CHARACTERISTICS
10
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50
tr
td(off)
100
VDS - Drain to Source Voltage - V
1000
td(on), tr, td(off), tf - Switching Time - ns
1
VDS - Drain to Source Voltage - V
Tch - Channel Temperature - °C
td(on)
10
tf
VDD = 28 V
VGS = 10 V
RG = 0 Ω
10
VDD = 44 V
28 V
11 V
40
8
30
6
VGS
20
10
1
4
2
VDS
ID = 82 A
0
0.1
1
10
100
0
ID - Drain Current - A
20
40
60
80
100
0
120
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
trr - Reverse Recovery Time - ns
1000
IF - Diode Forward Current - A
Crss
VGS = 0 V
f = 1 MHz
100
10 V
VGS = 0 V
10
1
0.1
di/dt = 100 A/μs
VGS = 0 V
Pulsed
0.01
10
0
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
Data Sheet D19804EJ1V0DS
1
10
100
IF - Diode Forward Current - A
5
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
NP82N055MUG, NP82N055NUG
PACKAGE DRAWINGS (Unit: mm)
1.27±0.2
0.8±0.1
0.5±0.2
2.54 TYP.
2.5±0.2
2.54 TYP.
3
10.1±0.3
2
0.8±0.1
2.54 TYP.
2.54 TYP.
1.27±0.2
3.1±0.3
1
4.45±0.2
1.3±0.2
13.7±0.3
3
10.0±0.2
4
3.1±0.2
2
13.7±0.3
1
6.3±0.3
4
4.45±0.2
1.3±0.2
15.9 MAX.
φ 3.8±0.2
2.8±0.3
10.0±0.2
1.2±0.3
TO-262 (MP-25SK)
8.9±0.2
TO-220 (MP-25K)
0.5±0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
2.5±0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
6
Data Sheet D19804EJ1V0DS
NP82N055MUG, NP82N055NUG
MARKING INFORMATION
NEC
82N055
UG
Pb-free plating marking
Abbreviation of part number
Lot code
RECOMMENDED SOLDERING CONDITIONS
These products should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method
Soldering Conditions
Wave soldering
Maximum temperature (Solder temperature): 260°C or below
NP82N055MUG,
Time: 10 seconds or less
NP82N055NUG
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Partial heating
Maximum temperature (Pin temperature): 350°C or below
NP82N055MUG,
Time (per side of the device): 3 seconds or less
NP82N055NUG
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Recommended
Condition Symbol
THDWS
P350
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet D19804EJ1V0DS
7
NP82N055MUG, NP82N055NUG
• The information in this document is current as of May, 2009. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets,
etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or
types are available in every country. Please check with an NEC Electronics sales representative for
availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
• While NEC Electronics endeavors to enhance the quality and safety of NEC Electronics products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. In addition, NEC
Electronics products are not taken measures to prevent radioactive rays in the product design. When customers
use NEC Electronics products with their products, customers shall, on their own responsibility, incorporate
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persons, as the result of defects of NEC Electronics products.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E0904E
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