NEC NP86N04MHE Mos field effect transistor switching n-channel power mos fet Datasheet

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP86N04EHE, NP86N04KHE
NP86N04CHE, NP86N04DHE, NP86N04MHE, NP86N04NHE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
<R>
ORDERING INFORMATION
PART NUMBER
NP86N04EHE-E1-AY
Note1, 2
NP86N04EHE-E2-AY
Note1, 2
NP86N04KHE-E1-AY
Note1
NP86N04KHE-E2-AY
Note1
NP86N04CHE-S12-AZ
Note1, 2
NP86N04DHE-S12-AY
Note1, 2
NP86N04MHE-S18-AY
Note1
NP86N04NHE-S18-AY
Note1
LEAD PLATING
PACKING
Pure Sn (Tin)
Tape 800 p/reel
PACKAGE
TO-263 (MP-25ZJ) typ. 1.4 g
TO-263 (MP-25ZK) typ. 1.5 g
Sn-Ag-Cu
Pure Sn (Tin)
TO-220 (MP-25) typ. 1.9 g
Tube 50 p/tube
Notes 1. Pb-free (This product does not contain Pb in the external electrode.)
2. Not for new design
TO-262 (MP-25 Fin Cut) typ. 1.8 g
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
(TO-220)
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on) = 4.4 mΩ MAX. (VGS = 10 V, ID = 43 A)
• Low input capacitance
(TO-262)
Ciss = 5900 pF TYP.
• Built-in gate protection diode
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14235EJ4V0DS00 (4th edition)
Date Published October 2007 NS
Printed in Japan
1999, 2000, 2007
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
NP86N04EHE, NP86N04KHE, NP86N04CHE, NP86N04DHE, NP86N04MHE, NP86N04NHE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
ID(DC)
±86
A
ID(pulse)
±344
A
Total Power Dissipation (TC = 25°C)
PT
230
W
Total Power Dissipation (TA = 25°C)
PT
1.8
W
Channel Temperature
Tch
175
°C
Drain Current (DC) (TC = 25°C)
Drain Current (Pulse)
Note1
Note2
Tstg
−55 to +175
°C
Single Avalanche Current
Note3
IAS
86/67/24
A
Single Avalanche Energy
Note3
EAS
74/450/580
mJ
Storage Temperature
Notes 1. Calculated constant current according to MAX. allowable channel temperature.
2. PW ≤ 10 μs, Duty cycle ≤ 1%
3. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V (see Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
0.65
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
83.3
°C/W
2
Data Sheet D14235EJ4V0DS
NP86N04EHE, NP86N04KHE, NP86N04CHE, NP86N04DHE, NP86N04MHE, NP86N04NHE
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 40 V, VGS = 0 V
10
μA
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
μA
Gate to Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
2.0
3.0
4.0
V
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 43 A
29
57
Drain to Source On-state Resistance
RDS(on)
VGS = 10 V, ID = 43 A
Input Capacitance
Ciss
Output Capacitance
S
3.5
4.4
mΩ
VDS = 25 V,
5900
8900
pF
Coss
VGS = 0 V,
1200
1800
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
530
960
pF
Turn-on Delay Time
td(on)
VDD = 20 V, ID = 43 A,
32
71
ns
Rise Time
tr
VGS = 10 V,
24
59
ns
Turn-off Delay Time
td(off)
RG = 1 Ω
110
220
ns
Fall Time
tf
33
82
ns
Total Gate Charge
QG
VDD = 32 V,
110
170
nC
Gate to Source Charge
QGS
VGS = 10 V,
22
nC
Gate to Drain Charge
QGD
ID = 86 A
36
nC
Body Diode Forward Voltage
VF(S-D)
IF = 86 A, VGS = 0 V
0.93
V
Reverse Recovery Time
trr
IF = 86 A, VGS = 0 V,
70
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/μs
125
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
PG.
VGS = 20 → 0 V
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
50 Ω
VGS
RL
Wave Form
RG
PG.
VDD
VGS
0
VGS
10%
90%
VDD
VDS
90%
IAS
90%
VDS
VGS
0
BVDSS
VDS
10%
0
10%
Wave Form
VDS
ID
τ
VDD
Starting Tch
τ = 1 μs
Duty Cycle ≤ 1%
td(on)
tr
ton
td(off)
tf
toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG.
50 Ω
RL
VDD
Data Sheet D14235EJ4V0DS
3
NP86N04EHE, NP86N04KHE, NP86N04CHE, NP86N04DHE, NP86N04MHE, NP86N04NHE
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
280
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0
25
50
75
240
200
160
120
80
40
0
100 125 150 175 200
25
0
TC - Case Temperature - °C
Figure3. FORWARD BIAS SAFE OPERATING AREA
100 125 150 175 200
800
)
(on
DS S
G
RV
(
PW
ID(pulse)
d
ite )
Lim0 V
=1
s
DC
P
Limower
D
ite is
d
sip
a
=1
0μ
10
1m
ID(DC)
EAS - Single Avalanche Energy - mJ
ID - Drain Current - A
75
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
1000
100
50
TC - Case Temperature - °C
s
0μ
s
tio
10
n
1
TC = 25°C
0.1 Single Pulse
0.1
1
10
700
600
580 mJ
450 mJ
500
400
IAS = 24 A
67 A
84 A
300
200
100 74 mJ
100
0
25
50
75
100
125
150
175
Starting Tch - Starting Channel Temperature - °C
VDS - Drain to Source Voltage - V
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - °C/W
1000
100
Rth(ch-A) = 83.3°C/W
10
1
Rth(ch-C) = 0.65°C/W
0.1
0.01
10 μ
Single Pulse
TC = 25°C
100 μ
1m
10 m
100 m
1
PW - Pulse Width - s
4
Data Sheet D14235EJ4V0DS
10
100
1000
NP86N04EHE, NP86N04KHE, NP86N04CHE, NP86N04DHE, NP86N04MHE, NP86N04NHE
Figure6. FORWARD TRANSFER CHARACTERISTICS
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
1000 Pulsed
ID - Drain Current - A
400
ID - Drain Current - A
100
TA = −55°C
25°C
75°C
150°C
175°C
10
1
Pulsed
320
VGS = 10 V
240
160
80
0.1
1
2
4
3
5
0
6
0.4
0
10
TA = 175°C
75°C
25°C
−55°C
0.1
0.01
0.01
0.1
10
1
100
RDS(on) - Drain to Source On-state Resistance - mΩ
ID - Drain Current - A
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
Pulsed
15
10
VGS = 10 V
5
0
1
10
100
1000
RDS(on) - Drain to Source On-state Resistance - mΩ
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = 10 V
Pulsed
1
1.2
0.8
1.6
2
VDS - Drain to Source Voltage - V
VGS(th) - Gate to Source Threshold Voltage - V
| yfs | - Forward Transfer Admittance - S
VGS - Gate to Source Voltage - V
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
Pulsed
10
ID = 43 A
0
0
5
10
15
20
VGS - Gate to Source Voltage - V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = VGS
ID = 250 μA
4.0
3.0
2.0
1.0
0
ID - Drain Current - A
Data Sheet D14235EJ4V0DS
−50
0
50
100
150
Tch - Channel Temperature - °C
5
NP86N04EHE, NP86N04KHE, NP86N04CHE, NP86N04DHE, NP86N04MHE, NP86N04NHE
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
8
7
6
5
VGS = 10 V
3
2
VGS = 10 V
100
0V
10
1
1
ID = 43 A
0
−50
50
0
100
0.1
0
150
Tch - Channel Temperature - °C
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
1000
VGS = 0 V
f = 1 MHz
10000
Ciss
1000
Coss
Crss
100
0.1
1
10
100
tf
td(off)
100
td(on)
tr
10
VDD = 20 V
VGS = 10 V
RG = 1 Ω
1
0.1
Figure16. REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Time - ns
10
9
8
VGS
7
6
30
5
4
20
3
10
100
2
VDS
1
ID = 86 A
0
20
40
60
80
QG - Gate Charge - nC
IF - Diode Forward Current - A
6
VDD = 32 V
20 V
8V
40
0
10
10
50
di/dt = 100 A/μs
VGS = 0 V
1.0
100
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100
1
0.1
10
1
ID - Drain Current - A
VDS - Drain to Source Voltage - V
1000
1.5
Figure15. SWITCHING CHARACTERISTICS
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
100000
Pulsed
1.0
0.5
VF(S-D) - Source to Drain Voltage - V
Data Sheet D14235EJ4V0DS
100
0
120
VGS - Gate to Source Voltage - V
4
1000
IF - Diode Forward Current - A
RDS(on) - Drain to Source On-state Resistance - mΩ
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
9
NP86N04EHE, NP86N04KHE, NP86N04CHE, NP86N04DHE, NP86N04MHE, NP86N04NHE
PACKAGE DRAWINGS (Unit: mm)
Note
1.3 ± 0.2
10.0 ± 0.3
No plating
7.88 MIN.
4
2
3
1.4 ± 0.2
0.7 ± 0.2
2.54 TYP.
9.15 ± 0.3
8.0 TYP.
8.5 ± 0.2
1
5.7 ± 0.4
1.0 ± 0.5
4
4.45 ± 0.2
0.025 to
0.25
P.
.5R
0
TY
R
0.8
2.54 TYP.
P.
TY
0.5 ± 0.2
0.75 ± 0.2
0.5 ±
2.8 ± 0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
1.Gate
2.Drain
2.5
3.Source
15.5 MAX.
5.9 MIN.
4
1
0.75 ± 0.1
2.54 TYP.
1.3 ± 0.2
12.7 MIN.
6.0 MAX.
1 2 3
0.5 ± 0.2
2.8 ± 0.2
0.75 ± 0.3
2.54 TYP.
2
3
1.0 ± 0.5
10 TYP.
Note
4.8 MAX.
1.3 ± 0.2
8.5 ± 0.2
1.3 ± 0.2
4.Fin (Drain)
12.7 MIN.
4.8 MAX.
φ 3.6 ± 0.2
10.0 TYP.
1.3 ± 0.2
3
4)TO-262 (MP-25 Fin Cut)
4
8ο
0.25
Note
10.6 MAX.
0.2
0 to
2.54
3)TO-220 (MP-25)
1.3 ± 0.2
2.54 ± 0.25
4.8 MAX.
10 TYP.
1.35 ± 0.3
2)TO-263 (MP-25ZK)
15.25 ± 0.5
1)TO-263 (MP-25ZJ)
3.0 ± 0.3
<R>
0.5 ± 0.2
2.8 ± 0.2
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
Note Not for new design
Data Sheet D14235EJ4V0DS
7
NP86N04EHE, NP86N04KHE, NP86N04CHE, NP86N04DHE, NP86N04MHE, NP86N04NHE
6)TO-262 (MP-25SK)
1 2 3
0.8 ± 0.1
0.5 ± 0.2
2.5 ± 0.2
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1.3 ± 0.2
1.27 ± 0.2
3.1 ± 0.3
4
4.45 ± 0.2
10.1 ± 0.3
15.9 MAX.
1.27 ± 0.2
2.54 TYP.
10.0 ± 0.2
13.7 ± 0.3
3
13.7 ± 0.3
1 2
4.45 ± 0.2
1.3 ± 0.2
3.1 ± 0.2
4
φ 3.8 ± 0.2
6.3 ± 0.3
2.8 ± 0.3
10.0 ± 0.2
8.9 ± 0.2 1.2 ± 0.3
5)TO-220 (MP-25K)
0.8 ± 0.1
0.5 ± 0.2
2.54 TYP.
2.54 TYP.
2.5 ± 0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Gate
Protection
Diode
Remark
Body
Diode
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
8
Data Sheet D14235EJ4V0DS
NP86N04EHE, NP86N04KHE, NP86N04CHE, NP86N04DHE, NP86N04MHE, NP86N04NHE
<R>
TAPE INFORMATION
There are two types (-E1, -E2) of taping depending on the direction of the device.
Draw-out side
<R>
Reel side
MARKING INFORMATION
NEC
86N04
HE
<R>
Pb-free plating marking
Abbreviation of part number
Lot code
RECOMMENDED SOLDERING CONDITIONS
These products should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method
Soldering Conditions
Infrared reflow
Maximum temperature (Package's surface temperature): 260°C or below
MP-25ZJ, MP-25ZK
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220°C: 60 seconds or less
Preheating time at 160 to 180°C: 60 to 120 seconds
Recommended
Condition Symbol
IR60-00-3
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
Wave soldering
Maximum temperature (Solder temperature): 260°C or below
MP-25, MP-25K, MP-25SK,
Time: 10 seconds or less
MP-25 Fin Cut
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Partial heating
Maximum temperature (Pin temperature): 350°C or below
MP-25ZJ, MP-25ZK,
Time (per side of the device): 3 seconds or less
MP-25K, MP-25SK
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Partial heating
Maximum temperature (Pin temperature): 300°C or below
MP-25, MP-25 Fin Cut
Time (per side of the device): 3 seconds or less
THDWS
P350
P300
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet D14235EJ4V0DS
9
NP86N04EHE, NP86N04KHE, NP86N04CHE, NP86N04DHE, NP86N04MHE, NP86N04NHE
• The information in this document is current as of October, 2007. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
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M8E 02. 11-1
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