NEC NP88N055DLE-S12-AY Mos field effect transistor switching n-channel power mos fet Datasheet

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP88N055ELE, NP88N055KLE
NP88N055CLE, NP88N055DLE, NP88N055MLE, NP88N055NLE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
<R>
ORDERING INFORMATION
PART NUMBER
NP88N055ELE-E1-AY
Note1, 2
NP88N055ELE-E2-AY
Note1, 2
NP88N055KLE-E1-AY
Note1
NP88N055KLE-E2-AY
Note1
NP88N055CLE-S12-AZ
Note1, 2
NP88N055DLE-S12-AY
Note1, 2
NP88N055MLE-S18-AY
Note1
NP88N055NLE-S18-AY
Note1
LEAD PLATING
PACKING
PACKAGE
TO-263 (MP-25ZJ) typ. 1.4 g
Pure Sn (Tin)
Tape 800 p/reel
TO-263 (MP-25ZK) typ. 1.5 g
Sn-Ag-Cu
Pure Sn (Tin)
TO-220 (MP-25) typ. 1.9 g
Tube 50 p/tube
Notes 1. Pb-free (This product does not contain Pb in the external electrode.)
2. Not for new design
TO-262 (MP-25 Fin Cut) typ. 1.8 g
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
(TO-220)
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on)1 = 5.2 mΩ MAX. (VGS = 10 V, ID = 44 A)
RDS(on)2 = 6.3 mΩ MAX. (VGS = 5.0 V, ID = 44 A)
(TO-262)
RDS(on)3 = 6.8 mΩ MAX. (VGS = 4.5 V, ID = 44 A)
• Low input capacitance
Ciss = 9700 pF TYP.
• Built-in gate protection diode
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D13933EJ7V0DS00 (7th edition)
Date Published October 2007 NS
Printed in Japan
1999, 2000, 2007
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
NP88N055ELE, NP88N055KLE, NP88N055CLE, NP88N055DLE, NP88N055MLE, NP88N055NLE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
55
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
ID(DC)
±88
A
ID(pulse)
±352
A
Drain Current (DC) (TC = 25°C)
Drain Current (pulse)
Note1
Note2
Total Power Dissipation (TA = 25°C)
PT
1.8
W
Total Power Dissipation (TC = 25°C)
PT
288
W
Channel Temperature
Tch
175
°C
Tstg
−55 to +175
°C
Note3
IAS
75/88
A
Note3
EAS
562/232
mJ
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1. Calculated constant current according to MAX. allowable channel temperature.
2. PW ≤ 10 μs, Duty cycle ≤ 1%
3. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V (see Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
0.52
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
83.3
°C/W
2
Data Sheet D13933EJ7V0DS
NP88N055ELE, NP88N055KLE, NP88N055CLE, NP88N055DLE, NP88N055MLE, NP88N055NLE
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 55 V, VGS = 0 V
10
μA
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
μA
Gate to Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
1.5
2.0
2.5
V
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 44 A
38
75
Drain to Source On-state Resistance
RDS(on)1
VGS = 10 V, ID = 44 A
4.1
5.2
mΩ
RDS(on)2
VGS = 5.0 V, ID = 44 A
4.8
6.3
mΩ
RDS(on)3
VGS = 4.5 V, ID = 44 A
5.1
6.8
mΩ
Input Capacitance
Ciss
VDS = 25 V,
9700
14600
pF
Output Capacitance
Coss
VGS = 0 V,
1100
1700
pF
490
890
pF
f = 1 MHz
S
Reverse Transfer Capacitance
Crss
Turn-on Delay Time
td(on)
VDD = 28 V, ID = 44 A,
37
82
ns
tr
VGS = 10 V,
22
56
ns
180
360
ns
35
88
ns
VDD = 44 V, VGS = 10 V, ID = 88 A
160
240
nC
QG2
VDD = 44 V,
88
140
nC
QGS
VGS = 5.0 V,
27
nC
48
nC
IF = 88 A, VGS = 0 V
1.0
V
Rise Time
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG1
Gate to Source Charge
RG = 1 Ω
ID = 88 A
Gate to Drain Charge
QGD
Body Diode Forward Voltage
VF(S-D)
Reverse Recovery Time
trr
IF = 88 A, VGS = 0 V,
62
ns
Qrr
di/dt = 100 A/μs
120
nC
Reverse Recovery Charge
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
PG.
VGS = 20 → 0 V
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
50 Ω
VGS
RL
Wave Form
RG
PG.
VDD
VGS
0
VGS
10%
90%
VDD
VDS
90%
BVDSS
IAS
90%
VDS
VGS
0
VDS
10%
0
10%
Wave Form
VDS
ID
τ
VDD
Starting Tch
τ = 1 μs
Duty Cycle ≤ 1%
td(on)
tr
ton
td(off)
tf
toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG.
50 Ω
RL
VDD
Data Sheet D13933EJ7V0DS
3
NP88N055ELE, NP88N055KLE, NP88N055CLE, NP88N055DLE, NP88N055MLE, NP88N055NLE
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
350
100
80
60
40
20
0
0
25
50
75
300
250
200
150
100
50
0
100 125 150 175 200
25
0
Figure3. FORWARD BIAS SAFE OPERATING AREA
100
PW
ID(pulse)
10
10
Po
Lim wer DC
ite Dis
d
sip
0μ
=
10
s
1m
μs
s
ms
ati
on
10
1
Single pulse
TC = 25°C
0.1
0.1
1
75
100 125 150 175 200
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
Single Pulse Avalanche Energy - mJ
ID - Drain Current - A
1000
d
ite
im V)
) L 10
n
o
S(
=
ID(DC)
RDVGS
(
50
TC - Case Temperature - °C
TC - Case Temperature - °C
10
800
700
600 562 mJ
500
IAS = 75 A
88 A
400
300
232 mJ
200
100
0
25
100
50
75
100
125
150
175
Starting Tch - Starting Channel Temperature - °C
VDS - Drain to Source Voltage - V
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - °C/W
1000
100
Rth(ch-A) = 83.3°C/W
10
1
Rth(ch-C) = 0.52°C/W
0.1
0.01
10 μ
Single pulse
TC = 25°C
100 μ
1m
10 m
100 m
1
PW - Pulse Width - s
4
Data Sheet D13933EJ7V0DS
10
100
1000
NP88N055ELE, NP88N055KLE, NP88N055CLE, NP88N055DLE, NP88N055MLE, NP88N055NLE
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Figure6. FORWARD TRANSFER CHARACTERISTICS
100 Pulsed
10
ID - Drain Current - A
ID - Drain Current - A
500
TA = −25°C
25°C
75°C
150°C
175°C
1
0.1
400
VGS = 10 V
5.0 V
300
4.5 V
200
100
1
2
3
VDS = 10 V
5
6
4
Pulsed
0
1.0
2.0
3.0
4.0
VDS - Drain to Source Voltage - V
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
Pulsed
100
VDS = 10 V
Pulsed
10
TA = 175°C
75°C
25°C
−50°C
1
0.1
0.01
0.01
0.1
10
1
100
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
Pulsed
15
10
5.0 V
VGS = 4.5 V
5
10 V
0
1
10
100
1000
RDS(on) - Drain to Source On-state Resistance - mΩ
VGS - Gate to Source Voltage - V
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - mΩ
0
VGS(th) - Gate to Source Threshold Voltage - V
| yfs | - Forward Transfer Admittance - S
0.01
5
0
ID = 44 A
0
5
15
10
20
VGS - Gate to Source Voltage - V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
3.0
VDS = VGS
ID = 250 μA
2.5
2.0
1.5
1.0
0.5
0
−50
0
50
100
150
Tch - Channel Temperature - °C
ID - Drain Current - A
Data Sheet D13933EJ7V0DS
5
8
7
6
VGS = 10 V
5
4
3
2
1
1000
VGS = 10 V
100
0V
10
1
50
0
100
0.1
0
150
Tch - Channel Temperature - °C
1000
Ciss
Coss
1000
Crss
1
10
100
tf
td(off)
100
td(on)
tr
10
VDD = 28 V
VGS = 10 V
RG = 1 Ω
1
0.1
VDS - Drain to Source Voltage - V
10
1.0
10
100
10
VGS
80
8
60
6
VDD = 44 V
4
40
20
100
IF - Diode Forward Current - A
6
100
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Time - ns
di/dt = 100 A/μs
VGS = 0 V
100
1
0.1
10
1
ID - Drain Current - A
Figure16. REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
1.5
Figure15. SWITCHING CHARACTERISTICS
td(on), tr, td(off), tf - Switching Time - ns
10000
1.0
0.5
VF(S-D) - Source to Drain Voltage - V
2
VDS
0
20
40
60
80
ID = 88 A 0
100 120 140 160
QG - Gate Charge - nC
Data Sheet D13933EJ7V0DS
VGS - Gate to Source Voltage - V
−50
100
0.1
Pulsed
ID = 44 A
0
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
100000
VGS = 0 V
f = 1 MHz
Ciss, Coss, Crss - Capacitance - pF
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
9
IF - Diode Forward Current - A
RDS(on) - Drain to Source On-state Resistance - mΩ
NP88N055ELE, NP88N055KLE, NP88N055CLE, NP88N055DLE, NP88N055MLE, NP88N055NLE
NP88N055ELE, NP88N055KLE, NP88N055CLE, NP88N055DLE, NP88N055MLE, NP88N055NLE
PACKAGE DRAWINGS (Unit: mm)
Note
1.3 ± 0.2
10.0 ± 0.3
No plating
7.88 MIN.
4
2
3
1.4 ± 0.2
0.7 ± 0.2
2.54 TYP.
9.15 ± 0.3
8.0 TYP.
8.5 ± 0.2
1
5.7 ± 0.4
1.0 ± 0.5
4
4.45 ± 0.2
0.025 to
0.25
P.
.5R
0
TY
R
0.8
2.54 TYP.
P.
TY
0.5 ± 0.2
0.75 ± 0.2
0.5 ±
2.8 ± 0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
1.Gate
2.Drain
2.5
3.Source
15.5 MAX.
5.9 MIN.
4
1
0.75 ± 0.1
2.54 TYP.
1.3 ± 0.2
12.7 MIN.
6.0 MAX.
1 2 3
0.5 ± 0.2
2.8 ± 0.2
0.75 ± 0.3
2.54 TYP.
2
3
1.0 ± 0.5
10 TYP.
Note
4.8 MAX.
1.3 ± 0.2
8.5 ± 0.2
1.3 ± 0.2
4.Fin (Drain)
12.7 MIN.
4.8 MAX.
φ 3.6 ± 0.2
10.0 TYP.
1.3 ± 0.2
3
4)TO-262 (MP-25 Fin Cut)
4
8ο
0.25
Note
10.6 MAX.
0.2
0 to
2.54
3)TO-220 (MP-25)
1.3 ± 0.2
2.54 ± 0.25
4.8 MAX.
10 TYP.
1.35 ± 0.3
2)TO-263 (MP-25ZK)
15.25 ± 0.5
1)TO-263 (MP-25ZJ)
3.0 ± 0.3
<R>
0.5 ± 0.2
2.8 ± 0.2
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
Note Not for new design
Data Sheet D13933EJ7V0DS
7
NP88N055ELE, NP88N055KLE, NP88N055CLE, NP88N055DLE, NP88N055MLE, NP88N055NLE
1 2 3
0.8 ± 0.1
0.5 ± 0.2
2.54 TYP.
2.5 ± 0.2
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1.3 ± 0.2
1.27 ± 0.2
3.1 ± 0.3
15.9 MAX.
1.27 ± 0.2
4
4.45 ± 0.2
10.1 ± 0.3
3
10.0 ± 0.2
13.7 ± 0.3
13.7 ± 0.3
1 2
4.45 ± 0.2
1.3 ± 0.2
3.1 ± 0.2
4
φ 3.8 ± 0.2
6.3 ± 0.3
2.8 ± 0.3
10.0 ± 0.2
1.2 ± 0.3
6)TO-262 (MP-25SK)
8.9 ± 0.2
5)TO-220 (MP-25K)
0.8 ± 0.1
0.5 ± 0.2
2.54 TYP.
2.54 TYP.
2.5 ± 0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Gate
Protection
Diode
Remark
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
8
Data Sheet D13933EJ7V0DS
NP88N055ELE, NP88N055KLE, NP88N055CLE, NP88N055DLE, NP88N055MLE, NP88N055NLE
<R>
TAPE INFORMATION
There are two types (-E1, -E2) of taping depending on the direction of the device.
Draw-out side
<R>
Reel side
MARKING INFORMATION
NEC
88N055
LE
<R>
Pb-free plating marking
Abbreviation of part number
Lot code
RECOMMENDED SOLDERING CONDITIONS
These products should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method
Soldering Conditions
Infrared reflow
Maximum temperature (Package's surface temperature): 260°C or below
MP-25ZJ, MP-25ZK
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220°C: 60 seconds or less
Preheating time at 160 to 180°C: 60 to 120 seconds
Recommended
Condition Symbol
IR60-00-3
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
Wave soldering
Maximum temperature (Solder temperature): 260°C or below
MP-25, MP-25K, MP-25SK,
Time: 10 seconds or less
MP-25 Fin Cut
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Partial heating
Maximum temperature (Pin temperature): 350°C or below
MP-25ZJ, MP-25ZK,
Time (per side of the device): 3 seconds or less
MP-25K, MP-25SK
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Partial heating
Maximum temperature (Pin temperature): 300°C or below
MP-25, MP-25 Fin Cut
Time (per side of the device): 3 seconds or less
THDWS
P350
P300
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet D13933EJ7V0DS
9
NP88N055ELE, NP88N055KLE, NP88N055CLE, NP88N055DLE, NP88N055MLE, NP88N055NLE
• The information in this document is current as of October, 2007. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
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M8E 02. 11-1
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