MBRS2040LT3G, NRVBS2040LT3G Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package http://onsemi.com . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES 40 VOLTS Features Compact Package with J−Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guardring for Over−Voltage Protection Low Forward Voltage Drop ESD Ratings: Human Body Model = 3B (> 16000 V) Machine Model = C (> 400 V) AEC−Q101 Qualified and PPAP Capable NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements All Packages are Pb−Free* SMB CASE 403A MARKING DIAGRAM AYWW BKJLG G Mechanical Characteristics Case: Molded Epoxy Epoxy Meets UL94, VO at 1/8 Weight: 95 mg (approximately) Maximum Temperature of 260C / 10 Seconds for Soldering Cathode Polarity Band Available in 12 mm Tape, 2500 Units per 13 inch Reel, Add “T3” Suffix to Part Number Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Marking: BKJL BKJL A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† MBRS2040LT3G SMB (Pb−Free) 2,500 / Tape & Reel NRVBS2040LT3G SMB (Pb−Free) 2,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2012 January, 2012 − Rev. 4 1 Publication Order Number: MBRS2040LT3/D MBRS2040LT3G, NRVBS2040LT3G MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 103C) Symbol Value Unit VRRM VRWM VR 40 V IO Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 104C) IFRM Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Storage Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25C) 2.0 4.0 70 A A A Tstg, TC −55 to +150 C TJ −55 to +125 C dv/dt 10,000 V/ms Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Thermal Resistance — Junction−to−Lead (Note 1) Thermal Resistance — Junction−to−Ambient (Note 2) Symbol Value Unit RJL RJA 22.5 78 C/W TJ = 25C TJ = 125C Volts 0.43 0.50 0.34 0.45 TJ = 25C TJ = 100C 0.8 0.1 20 6.0 1. Minimum pad size (0.108 X 0.085 inch) for each lead on FR4 board. 2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. ELECTRICAL CHARACTERISTICS Symbol Characteristic Maximum Instantaneous Forward Voltage (Note 3) see Figure 2 (IF = 2.0 A) (IF = 4.0 A) VF Maximum Instantaneous Reverse Current (Note 3) see Figure 4 (VR = 40 V) (VR = 20 V) IR 3. Pulse Test: Pulse Width 250 s, Duty Cycle 2.0%. http://onsemi.com 2 Value Unit mA 100 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) MBRS2040LT3G, NRVBS2040LT3G 100 10 TJ = 100C 1.0 TJ = 25C TJ = 125C TJ = -40C 0.1 0.2 0 0.4 0.6 0.8 TJ = 25C TJ = 100C 0.1 0.2 0 0.4 0.6 0.8 Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 100E-3 I R, MAXIMUM REVERSE CURRENT (AMPS) I R, REVERSE CURRENT (AMPS) TJ = 125C 1.0 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 10E-3 TJ = 125C TJ = 100C 1.0E-3 100E-6 TJ = 125C 10E-3 TJ = 100C 1.0E-3 100E-6 TJ = 25C 10E-6 1.0E-6 10 3.5 20 30 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current SQUARE WAVE Ipk/Io = p 1.5 Ipk/Io = 5 1.0 Ipk/Io = 10 0.5 Ipk/Io = 20 0 20 0 VR, REVERSE VOLTAGE (VOLTS) 3.0 2.0 1.0E-6 40 dc 2.5 TJ = 25C 10E-6 PFO , AVERAGE POWER DISSIPATION (WATTS) 0 I O , AVERAGE FORWARD CURRENT (AMPS) 10 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 100E-3 0 100 40 60 80 100 120 1.2 SQUARE WAVE 1.0 Ipk/Io = p Ipk/Io = 5 0.6 Ipk/Io = 10 0.4 Ipk/Io = 20 0.2 0 0 140 dc 0.8 0.5 1.0 1.5 2.0 2.5 TL, LEAD TEMPERATURE (C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Figure 6. Forward Power Dissipation http://onsemi.com 3 3.0 MBRS2040LT3G, NRVBS2040LT3G TJ , DERATED OPERATING TEMPERATURE ( C) C, CAPACITANCE (pF) 1000 TJ = 25C 100 10 R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0 5.0 10 15 20 25 30 35 125 Rtja = 22.5C/W 115 105 40 95 42C/W 61C/W 85 78C/W 75 92C/W 65 5.0 0 10 15 20 30 25 35 40 VR, REVERSE VOLTAGE (VOLTS) VR, DC REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating* * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ = TJmax − r(t)(Pf + Pr) where TJ may be calculated from the equation: r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. 1.0 50% 20% 10% 0.1 5.0% 2.0% 0.01 1.0% Rtjl(t) = Rtjl*r(t) 0.001 0.00001 0.0001 0.001 0.01 1.0 0.1 10 100 R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) T, TIME (s) Figure 9. Thermal Response Junction to Lead 1.0 50% 20% 0.1 10% 5.0% 2.0% 0.01 1.0% Rtjl(t) = Rtjl*r(t) 0.001 0.00001 0.0001 0.001 0.01 0.1 1.0 T, TIME (s) Figure 10. Thermal Response Junction to Ambient http://onsemi.com 4 10 100 1,000 MBRS2040LT3G, NRVBS2040LT3G PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE H HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. E b DIM A A1 b c D E HE L L1 D POLARITY INDICATOR OPTIONAL AS NEEDED MIN 1.90 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.20 2.28 0.10 0.19 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.075 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.087 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.090 0.007 0.087 0.012 0.156 0.181 0.220 0.063 A L L1 A1 c SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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