ON NSR0240V2T1G Schottky barrier diode Datasheet

NSR0240V2T1G,
NSVR0240V2T1G
Schottky Barrier Diode
Schottky barrier diodes are optimized for very low forward voltage
drop and low leakage current and are used in a wide range of dc−dc
converter, clamping and protection applications in portable devices.
NSR0240V2 in a SOD−523 miniature package enables designers to
meet the challenging task of achieving higher efficiency and meeting
reduced space requirements.
Features









Very Low Forward Voltage Drop − 480 mV @ 100 mA
Low Reverse Current − 0.2 mA @ 25 V VR
250 mA of Continuous Forward Current
Power Dissipation of 200 mW with Minimum Trace
Very High Switching Speed
Low Capacitance − CT = 4 pF
AEC Qualified and PPAP Capable
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
This is a Pb−Free Device*
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40 VOLT SCHOTTKY
BARRIER DIODE
SOD−523
CASE 502
PLASTIC
1
CATHODE
2
ANODE
MARKING DIAGRAM
Typical Applications





LCD and Keypad Backlighting
Camera Photo Flash
Buck and Boost dc−dc Converters
Reverse Voltage and Current Protection
Clamping & Protection
1
2
AC = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
Markets





AC M G
G
*Date Code orientation position may vary depending
upon manufacturing location.
Mobile Handsets
MP3 Players
Digital Camera and Camcorders
Notebook PCs & PDAs
GPS
ORDERING INFORMATION
MAXIMUM RATINGS
Rating
Package
Shipping†
NSR0240V2T1G
SOD−523*
(Pb−Free)
3,000 /
Tape & Reel
NSVR0240V2T1G
SOD−523*
(Pb−Free)
3,000 /
Tape & Reel
Device
Symbol
Value
Unit
Reverse Voltage
VR
40
Vdc
*This package is inherently Pb−Free.
Forward Continuous Current (DC)
IF
250
mA
Non−Repetitive Peak Forward Surge Current
IFSM
2.0
A
ESD Rating: Human Body Model
Machine Model
ESD
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Class 2
Class A
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 2
1
Publication Order Number:
NSR0240V2T1/D
NSR0240V2T1G, NSVR0240V2T1G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25C
RqJA
PD
600
200
C/W
mW
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25C
RqJA
PD
300
400
C/W
mW
TJ, Tstg
−55 to +150
C
Junction and Storage Temperature Range
1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state.
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Symbol
Characteristic
Reverse Leakage
(VR = 10 V)
(VR = 25 V)
(VR = 40 V)
IR
Forward Voltage
(IF = 10 mA)
(IF = 100 mA)
(IF = 200 mA)
VF
Total Capacitance
(VR = 5.0 V, f = 1 MHz)
CT
Reverse Recovery Time
(IF = IR = 10 mA, IR = 1.0 mA)
trr
DC Current
Source
+
−
750 mH
50 W Output
Pulse
Generator
0.1 mF
0V
IF
Min
Typ
Max
−
−
−
−
0.2
0.5
0.55
2.0
10
−
−
−
345
485
580
390
550
700
−
4.0
−
−
3.0
−
tr
10%
90%
VR
0.1 mF
tp
Pulse Generator
Output
IF
DUT
Adjust for IRM
trr
RL = 50 W
IRM
Current
Transformer
50 W Input
Oscilloscope
1.
2.
3.
4.
5.
iR(REC) = 1 mA
Output Pulse
(IF = IRM = 10 mA; measured
at iR(REC) = 1 mA)
DC Current Source is adjusted for a Forward Current (IF) of 10 mA.
Pulse Generator Output is adjusted for a Peak Reverse Recovery Current IRM of 10 mA.
Pulse Generator transition time << trr.
IR(REC) is measured at 1 mA. Typically 0.1 X IRM or 0.25 X IRM.
tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
Unit
mA
mV
pF
ns
NSR0240V2T1G, NSVR0240V2T1G
IF, FORWARD CURRENT (mA)
1000
100
125C
10
150C
1
0.1
0.01
0.001
85C
0
25C
−40C
0.2
0.1
0.3
0.4
0.5
0.6
VF, FORWARD VOLTAGE (V)
Figure 2. Forward Voltage
Ir, REVERSE CURRENT (mA)
1000
150C
100 125C
85C
10
1
25C
0.1
0.01
0.001
0.0001 −40C
0.00001
0
5
10
15
20
25
30
35
VR, REVERSE VOLTAGE (V)
Figure 3. Leakage Current
CT, TOTAL CAPACITANCE (pF)
14
12
TA = 25C
10
8
6
4
2
0
0
5
10
15
20
25
30
35
VR, REVERSE VOLTAGE (V)
Figure 4. Total Capacitance
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3
40
45
NSR0240V2T1G, NSVR0240V2T1G
PACKAGE DIMENSIONS
SOD−523
CASE 502−01
ISSUE E
−X−
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.
−Y−
E
2X
b
0.08
1
M
2
X Y
DIM
A
b
c
D
E
HE
L
L2
TOP VIEW
A
c
MILLIMETERS
MIN
NOM
MAX
0.50
0.60
0.70
0.25
0.30
0.35
0.07
0.14
0.20
1.10
1.20
1.30
0.70
0.80
0.90
1.50
1.60
1.70
0.30 REF
0.15
0.20
0.25
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
HE
SIDE VIEW
2X
L
RECOMMENDED
SOLDERING FOOTPRINT*
2X
2X
1.80
0.48
L2
2X
0.40
BOTTOM VIEW
PACKAGE
OUTLINE
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
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NSR0240V2T1/D
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