ON NSR0340HT1G Schottky barrier diode Datasheet

NSR0340HT1G
Schottky Barrier Diode
Schottky barrier diodes are optimized for very low forward voltage
drop and low leakage current and are used in a wide range of dc−dc
converter, clamping and protection applications in portable devices.
NSR0340H in a SOD−323 miniature package enables designers to
meet the challenging task of achieving higher efficiency and meeting
reduced space requirements.
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Features
•
•
•
•
•
•
•
•
Very Low Forward Voltage Drop −415 mV @ 100 mA
Low Reverse Current − 0.4 mA @ 25 V VR
250 mA of Continuous Forward Current
Power Dissipation of 160 mW with Minimum Trace
Very High Switching Speed
Low Capacitance − CT = 6 pF
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
•
•
•
•
•
LCD and Keypad Backlighting
Camera Photo Flash
Buck and Boost dc−dc Converters
Reverse Voltage and Current Protection
Clamping & Protection
1
CATHODE
2
ANODE
2
MARKING
DIAGRAM
1
AD MG
G
SOD−323
CASE 477
STYLE 1
AD = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Markets
•
•
•
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40 VOLT SCHOTTKY
BARRIER DIODE
Mobile Handsets
MP3 Players
Digital Camera and Camcorders
Notebook PCs and PDAs
GPS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
40
Vdc
Forward Continuous Current (DC)
IF
250
mA
IFSM
1.0
A
Non−Repetitive Peak Forward Surge
Current
ESD Rating: Human Body Model
Machine Model
ESD
Device
Package
Shipping†
NSR0340HT1G
SOD−323
(Pb−Free)
3000 / Tape & Reel
NSVR0340HT1G
SOD−323
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Class 2
Class A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 3
1
Publication Order Number:
NSR0340H/D
NSR0340HT1G
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Characteristic
RqJA
PD
740
160
°C/W
mW
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
RqJA
PD
460
270
°C/W
mW
TJ, Tstg
−55 to +150
°C
Junction and Storage Temperature Range
1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse Leakage
(VR = 10 V)
(VR = 25 V)
(VR = 40 V)
IR
Forward Voltage
(IF = 10 mA)
(IF = 100 mA)
(IF = 200 mA)
VF
Total Capacitance
(VR = 10 V, f = 1 MHz)
CT
Reverse Recovery Time
(IF = IR = 10 mA, IR = 1.0 mA)
trr
Min
Typ
Max
0.2
0.4
1.3
1.0
3.0
6.0
320
415
470
350
490
590
Unit
mA
mV
pF
6.0
ns
5.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
DC Current
− Source +
tr
0.1 mF
tp
0V
10%
750 mH
50 W Output
Pulse
Generator
IF
90%
VR
Pulse Generator
Output
0.1 mF
IF
DUT
Adjust for IRM
trr
RL = 50 W
Output Pulse
(IF = IRM = 10 mA; measured
at iR(REC) = 1 mA)
50 W Input
Oscilloscope
1.
2.
3.
4.
5.
iR(REC) = 1 mA
IRM
Current
Transformer
DC Current Source is adjusted for a Forward Current (IF) of 10 mA.
Pulse Generator Output is adjusted for a Peak Reverse Recovery Current IRM of 10 mA.
Pulse Generator transition time << trr.
IR(REC) is measured at 1 mA. Typically 0.1 X IRM or 0.25 X IRM.
tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
NSR0340HT1G
TYPICAL CHARACTERISTICS
10000
100
IR, REVERSE CURRENT (mA)
IF, FORWARD CURRENT (mA)
1000
125°C
10
150°C
1
85°C
0.1
25°C
−40°C
0.01
100
125°C
10
85°C
1
0.1
25°C
0.01
0.001
−40°C
0.0001
0.00001
0
0.1
0.2
0.3
0.4
0.5
0.6
0
5
10
15
20
25
30
VF, FORWARD VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 2. Forward Voltage
Figure 3. Leakage Current
35
40
100
IFSM, NON−REPETITIVE SURGE
CURRENT (A)
30
CT, TOTAL CAPACITANCE (pF)
150°C
1000
TA = 25°C
25
20
15
10
5
5
10
15
20
25
30
35
10
1
0.01
0
0
Based on square wave currents
TJ = 25°C prior to surge
40
0.1
1
VR, REVERSE VOLTAGE (V)
tP, SQUARE WAVE PULSE DURATION (ms)
Figure 4. Total Capacitance
Figure 5. Non−Repetitive Surge Current
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3
10
NSR0340HT1G
PACKAGE DIMENSIONS
SOD−323
CASE 477−02
ISSUE H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF RADIUS.
HE
D
b
1
2
E
MILLIMETERS
DIM MIN
NOM MAX
A
0.80
0.90
1.00
A1 0.00
0.05
0.10
A3
0.15 REF
b
0.25
0.32
0.4
C 0.089
0.12 0.177
D
1.60
1.70
1.80
E
1.15
1.25
1.35
L
0.08
HE
2.30
2.50
2.70
A3
A
C
NOTE 3
L
NOTE 5
INCHES
NOM MAX
0.035 0.040
0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
MIN
0.031
0.000
STYLE 1:
PIN 1. CATHODE
2. ANODE
A1
SOLDERING FOOTPRINT*
0.63
0.025
0.83
0.033
1.60
0.063
2.85
0.112
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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NSR0340H/D
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