ON NSS12200LT1G 12 v, 4.0 a, low vce(sat) pnp transistor Datasheet

NSS12200LT1G
12 V, 4.0 A, Low VCE(sat)
PNP Transistor
ON Semiconductor’s e2 PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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−12 VOLTS
4.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 65 mW
COLLECTOR
3
1
BASE
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
VCEO
−12
Vdc
Collector-Base Voltage
VCBO
−12
Vdc
Emitter-Base Voltage
VEBO
−7.0
Vdc
IC
−2.0
A
Collector Current − Peak
ICM
−4.0
A
Electrostatic Discharge
ESD
HBM Class 3B
MM Class C
Collector Current − Continuous
2
EMITTER
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
THERMAL CHARACTERISTICS
MARKING DIAGRAM
Characteristic
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
460
mW
3.7
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 1)
270
°C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
540
mW
4.3
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2)
230
°C/W
Total Device Dissipation
(Single Pulse < 10 sec.)
PDsingle
(Note 3)
710
mW
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ 100 mm2, 1 oz. copper traces.
2. FR−4 @ 500 mm2, 1 oz. copper traces.
3. Thermal response.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 3
1
VE M G
G
1
VE = Specific Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
NSS12200LT1G
SOT−23
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSS12200L/D
NSS12200LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
−12
−
−
−12
−
−
−7.0
−
−
−
−
−0.1
−
−
−0.1
250
250
200
150
−
300
−
−
−
−
−
−
−
−
−
−
−0.008
−0.065
−0.100
−0.130
−0.011
−0.090
−0.120
−0.180
−
−
−0.900
−
−
−0.900
100
−
−
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
V(BR)CBO
Emitter−Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = −12 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = −7.0 Vdc)
IEBO
Vdc
Vdc
Vdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 4)
(IC = −10 mA, VCE = −2.0 V)
(IC = −500 mA, VCE = −2.0 V)
(IC = −1.0 A, VCE = −2.0 V)
(IC = −2.0 A, VCE = −2.0 V)
hFE
Collector −Emitter Saturation Voltage (Note 4)
(IC = −0.1 A, IB = −0.010 A) (Note 5)
(IC = −1.0 A, IB = −0.100 A)
(IC = −1.0 A, IB = −0.010 A)
(IC = −2.0 A, IB = −0.200 A)
VCE(sat)
Base −Emitter Saturation Voltage (Note 4)
(IC = −1.0 A, IB = −0.01 A)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 4)
(IC = −1.0 A, VCE = −2.0 V)
VBE(on)
V
V
V
Cutoff Frequency
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
fT
MHz
Input Capacitance (VEB = −0.5 V, f = 1.0 MHz)
Cibo
−
−
350
pF
Output Capacitance (VCB = −3.0 V, f = 1.0 MHz)
Cobo
−
−
120
pF
Delay (VCC = −10 V, IC = 750 mA, IB1 = 15 mA)
td
−
−
60
ns
Rise (VCC = −10 V, IC = 750 mA, IB1 = 15 mA)
tr
−
−
120
ns
Storage (VCC = −10 V, IC = 750 mA, IB1 = 15 mA)
ts
−
−
250
ns
Fall (VCC = −10 V, IC = 750 mA, IB1 = 15 mA)
tf
−
−
130
ns
SWITCHING CHARACTERISTICS
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
5. Guaranteed by design but not tested.
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2
NSS12200LT1G
0.35
VCE(sat) = 150°C
IC/IB = 10
VCE(sat), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
0.25
0.2
0.15
25°C
0.1
−55°C
0.05
0
0.001
0.01
0.1
1.0
0.25
−55°C
0.15
0.1
0.05
10
0
0.001
VBE(sat), BASE EMITTER
SATURATION VOLTAGE (V)
25°C (2.0 V)
−55°C (5.0 V)
−55°C (2.0 V)
0.9
1.0
10
0.9
−55°C
0.8
25°C
0.7
0.6
0.5
150°C
0.4
0.001
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs. Collector
Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1.0
VCE = −2.0 V
−55°C
0.8
0.7
25°C
0.6
0.5
150°C
0.4
0.3
0.2
0.1
1.0
IC/IB = 10
1.0
0.3
10
VCE, COLLECTOR−EMITTER
VOLTAGE (V)
hFE, DC CURRENT GAIN
25°C (5.0 V)
1.0
VBE(on), BASE EMITTER TURN−ON
VOLTAGE (V)
1.1
150°C (2.0 V)
0.1
0.1
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
150°C (5.0 V)
0.01
0.01
IC, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
0.001
25°C
0.2
IC, COLLECTOR CURRENT (A)
800
750
700
650
600
550
500
450
400
350
300
250
200
150
100
VCE(sat) = 150°C
IC/IB = 100
0.3
0.001
0.01
0.1
1.0
10
10 mA
0.8
VCE (V) IC = 500 mA
100 mA
300 mA
0.6
0.4
0.2
0
0.01
IC, COLLECTOR CURRENT (A)
0.1
1.0
10
IB, BASE CURRENT (mA)
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current
Figure 6. Saturation Region
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3
100
NSS12200LT1G
Cobo, OUTPUT CAPACITANCE (pF)
200
Cibo (pF)
350
325
300
275
250
225
200
175
150
125
0
1.0
2.0
3.0
4.0
5.0
6.0
Cobo (pF)
175
150
125
100
75
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
VEB, EMITTER BASE VOLTAGE (V)
VCB, COLLECTOR BASE VOLTAGE (V)
Figure 7. Input Capacitance
Figure 8. Output Capacitance
10
1 ms
1.0
10 ms
IC (A)
Cibo, INPUT CAPACITANCE (pF)
375
100 ms
1s
0.1
Thermal Limit
0.01
0.01
0.1
1.0
10
VCE (Vdc)
Figure 9. Safe Operating Area
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4
100
9.0
10
NSS12200LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
DIM
A
A1
b
c
D
E
e
L
L1
HE
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NSS12200L/D
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