ON NSS1C200T1G 100 v, 2.0 a, low vce(sat) pnp transistor Datasheet

NSS1C200MZ4
100 V, 2.0 A, Low VCE(sat)
PNP Transistor
ON Semiconductor’s e2 PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
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−100 VOLTS, 2.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
COLLECTOR
2,4
1
BASE
Features
3
EMITTER
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MARKING
DIAGRAM
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Max
Unit
VCEO
−100
Vdc
Collector-Base Voltage
VCB
−140
Vdc
Emitter-Base Voltage
VEB
−7.0
Vdc
Base Current − Continuous
IB
1.0
Adc
Collector Current − Continuous
Collector Current − Peak
IC
2.0
3.0
Adc
Total Power Dissipation
Total PD @ TA = 25°C (Note 1)
Total PD @ TA = 25°C (Note 2)
PD
Operating and Storage Junction
Temperature Range
TJ, Tstg
−55 to
+150
Max
Rating
Collector-Emitter Voltage
W
SOT−223
CASE 318E
STYLE 1
A
Y
W
1C200
G
2.0
0.8
AYW
1C200G
1
= Assembly Location
= Year
= Work Week
= Specific Device Code
= Pb−Free Package
PIN ASSIGNMENT
4
°C
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance,
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
RqJA
Maximum Lead Temperature for
Soldering Purposes, 1/8″ from
case for 5 seconds
TL
64
155
Unit
B
C
E
°C/W
1
2
3
Top View Pinout
260
°C
September, 2010 − Rev. 2
Package
Shipping†
NSS1C200T1G
SOT−223
(Pb−Free)
1000/
Tape & Reel
NSS1C200T3G
SOT−223
(Pb−Free)
4000/
Tape & Reel
Device
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. mounted on 1″ sq. (645 sq. mm) Collector pad on FR−4 bd material
2. mounted on 0.012″ sq. (7.6 sq. mm) Collector pad on FR−4 bd material
© Semiconductor Components Industries, LLC, 2010
ORDERING INFORMATION
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSS1C200MZ4/D
NSS1C200MZ4
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0)
V(BR)CEO
−100
Vdc
Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0)
V(BR)CBO
−140
Vdc
Emitter −Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0)
V(BR)EBO
−7.0
Vdc
OFF CHARACTERISTICS
Collector Cutoff Current (VCB = −140 Vdc, IE = 0)
ICBO
−100
nAdc
Emitter Cutoff Current (VEB = −6.0 Vdc)
IEBO
−50
nAdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = −10 mA, VCE = −2.0 V)
(IC = −500 mA, VCE = −2.0 V)
(IC = −1.0 A, VCE = −2.0 V)
(IC = −2.0 A, VCE = −2.0 V)
hFE
Collector −Emitter Saturation Voltage (Note 3)
(IC = −0.1 A, IB = −0.010 A)
(IC = −0.5 A, IB = −0.050 A)
(IC = −1.0 A, IB = −0.100 A)
(IC = −2.0 A, IB = −0.200 A)
VCE(sat)
Base −Emitter Saturation Voltage (Note 3)
(IC = −1.0 A, IB = −0.100 A)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 3)
(IC = −1.0 A, VCE = −2.0 V)
VBE(on)
150
120
80
50
360
V
−0.040
−0.080
−0.125
−0.220
V
−0.950
V
−0.850
Cutoff Frequency
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
fT
MHz
Input Capacitance (VEB = 3.0 V, f = 1.0 MHz)
Cibo
200
pF
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Cobo
22
pF
120
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
TYPICAL CHARACTERISTICS
PD, POWER DISSIPATION (W)
2.5
2.0
TC
1.5
1.0
TA
0.5
0
25
50
75
100
T, TEMPERATURE (°C)
Figure 1. Power Derating
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2
125
150
NSS1C200MZ4
TYPICAL CHARACTERISTICS
500
VCE = 2 V
150°C
400
300
25°C
200
−55°C
100
0
0.001
0.01
0.1
1
400
300
−55°C
100
0
10
0.001
0.01
Figure 2. DC Current Gain
Figure 3. DC Current Gain
150°C
25°C
−55°C
0.001
0.01
0.1
1
IC/IB = 20
150°C
0.1
−55°C
0.01
10
25°C
0.001
0.01
IC, COLLECTOR CURRENT (A)
1
10
Figure 5. Collector−Emitter Saturation Voltage
1.2
1.2
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
0.1
IC, COLLECTOR CURRENT (A)
Figure 4. Collector−Emitter Saturation Voltage
1.0
0.8 −55°C
0.2
10
1
0.1
0.4
1
IC, COLLECTOR CURRENT (A)
IC/IB = 10
0.6
0.1
IC, COLLECTOR CURRENT (A)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
25°C
200
1
0.01
VCE = 4 V
150°C
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
500
25°C
150°C
0.001
0.01
0.1
1
10
IC/IB = 50
1.0
0.8 −55°C
25°C
0.6
0.4
0.2
150°C
0.001
IC, COLLECTOR CURRENT (A)
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 6. Base−Emitter Saturation Voltage
Figure 7. Base−Emitter Saturation Voltage
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3
10
NSS1C200MZ4
1.2
1
VCE = 2 V
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE (V)
TYPICAL CHARACTERISTICS
1.0
0.8 −55°C
25°C
0.6
0.4
150°C
0.2
0.001
0.01
0.1
1
10
IC = 0.1 A
TJ = 25°C
0.0001
0.001
0.01
0.1
1
IB, BASE CURRENT (A)
Figure 8. Base−Emitter Voltage
Figure 9. Collector Saturation Region
120
Cob, OUTPUT CAPACITANCE (pF)
Cib, INPUT CAPACITANCE (pF)
0.5 A
0.1
IC, COLLECTOR CURRENT (A)
TJ = 25°C
ftest = 1 MHz
300
200
100
0
1
2
3
4
5
6
7
80
60
40
20
0
10
20
30
40
50
60
70
80
VCB, COLLECTOR BASE VOLTAGE (V)
Figure 10. Input Capacitance
Figure 11. Output Capacitance
90 100
10
TJ = 25°C
ftest = 1 MHz
VCE = 10 V
60
40
20
0
80
VBE, EMITTER BASE VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
100
TJ = 25°C
ftest = 1 MHz
100
0
8
120
fTau, CURRENT−GAIN BANDWIDTH
PRODUCT (MHz)
1.0 A
0.01
400
0
3.0 A
2.0 A
0.001
0.01
0.1
0.5 mS
1
1 mS
10 mS
0.1
TJ = 25°C
0.01
1
100 mS
1
10
IC, COLLECTOR CURRENT (A)
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 12. Current−Gain Bandwidth Product
Figure 13. Safe Operating Area
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4
100
NSS1C200MZ4
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
4
HE
1
2
3
b
e1
e
A1
C
q
A
0.08 (0003)
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
HE
E
q
L
STYLE 1:
PIN 1.
2.
3.
4.
L1
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0°
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
−−−
−−−
1.75
2.00
7.00
7.30
10°
−
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0°
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
0.069
0.276
−
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
0.078
0.287
10°
BASE
COLLECTOR
EMITTER
COLLECTOR
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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