ON NSS1C201LT1G 100 v, 3.0 a, low vce(sat) npn transistor Datasheet

NSS1C201LT1G
100 V, 3.0 A, Low VCE(sat)
NPN Transistor
ON Semiconductor’s e 2 PowerEdge family of low V CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
• This is a Pb−Free Device
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100 VOLTS, 3.0 AMPS
NPN LOW VCE(sat) TRANSISTOR
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS (TA = 25°C)
Symbol
Max
Unit
Collector-Emitter Voltage
VCEO
100
Vdc
Collector-Base Voltage
VCBO
140
Vdc
Emitter-Base Voltage
VEBO
7.0
Vdc
IC
2.0
A
ICM
3.0
A
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
490
mW
3.7
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 1)
255
°C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
710
mW
4.3
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2)
176
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
Rating
Collector Current − Continuous
Collector Current − Peak
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
THERMAL CHARACTERISTICS
Characteristic
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ 100 mm2, 1 oz. copper traces.
2. FR−4 @ 500 mm2, 1 oz. copper traces.
DEVICE MARKING
VT MG
G
1
VT = Specific Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
NSS1C201LT1G
SOT−23
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 0
1
Publication Order Number:
NSS1C201L/D
NSS1C201LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = −140 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = −6.0 Vdc)
IEBO
Vdc
100
Vdc
140
Vdc
7.0
nAdc
100
nAdc
50
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = −10 mA, VCE = −2.0 V)
(IC = −500 mA, VCE = −2.0 V)
(IC = −1.0 A, VCE = −2.0 V)
(IC = −2.0 A, VCE = −2.0 V)
hFE
Collector −Emitter Saturation Voltage (Note 3)
(IC = −0.1 A, IB = −0.01 A)
(IC = −0.5 A, IB = −0.05 A)
(IC = −1.0 A, IB = −0.100 A)
(IC = −2.0 A, IB = −0.200 A)
VCE(sat)
Base −Emitter Saturation Voltage (Note 3)
(IC = −1.0 A, IB = −0.100 A)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 3)
(IC = −1.0 A, VCE = −2.0 V)
VBE(on)
150
120
80
40
240
360
V
0.030
0.060
0.090
0.150
V
0.950
V
0.850
Cutoff Frequency
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
fT
MHz
Input Capacitance (VEB = 2.0 V, f = 1.0 MHz)
Cibo
230
pF
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Cobo
14
pF
110
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
TYPICAL CHARACTERISTICS
PD, POWER DERATING (W)
0.8
0.7
Note 2
0.6
0.5
0.4
Note 1
0.3
0.2
0.1
0
0
20
40
60
80
100
TJ, TEMPERATURE (°C)
Figure 1. Power Derating
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2
120
140
NSS1C201LT1G
TYPICAL CHARACTERISTICS
400
300
25°C
250
200
150
−55°C
100
0.01
0.1
1
25°C
250
200
150
−55°C
100
0
10
0.1
−55°C
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC/IB = 20
150°C
25°C
0.1
−55°C
0.01
0.001
VBE(sat), BASE−EMITTER SATURATION (V)
VBE(sat), BASE−EMITTER SATURATION (V)
IC/IB = 10
−55°C
0.8
25°C
0.6
150°C
0.4
0.01
0.1
1
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 5. Collector−Emitter Saturation Voltage
1.2
1.0
10
1
Figure 4. Collector−Emitter Saturation Voltage
0.001
1
Figure 3. DC Current Gain
25°C
0.2
0.1
Figure 2. DC Current Gain
150°C
0.001
0.01
IC, COLLECTOR CURRENT (A)
IC/IB = 10
0.01
0.001
IC, COLLECTOR CURRENT (A)
VCE(sat), COLLECTOR−EMITTER SATURATION (V)
0.001
1
VCE(sat), COLLECTOR−EMITTER
SATURATION (V)
300
50
50
0
VCE = 4 V
150°C
350
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
350
400
VCE = 2 V
150°C
10
1.2
IC/IB = 50
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 6. Base−Emitter Saturation Voltage
Figure 7. Base−Emitter Saturation Voltage
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3
10
NSS1C201LT1G
1.2
1
VCE = 2 V
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE (V)
TYPICAL CHARACTERISTICS
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
0.001
0.01
0.1
1
COB, OUTPUT CAPACITANCE (pF)
150
100
50
0
1
2
3
4
5
6
7
8
0.1
1
TJ = 25°C
fTEST = 1 MHz
40
35
30
25
20
15
10
5
0
0
10
20
30
40
50
60
70
80
VCB, COLLECTOR BASE VOLTAGE (V)
Figure 10. Input Capacitance
Figure 11. Output Capacitance
80
60
40
20
0.01
90 100
10
TJ = 25°C
fTEST = 1 MHz
VCE = 2 V
0.001
45
VEB, EMITTER BASE VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
CIB, INPUT CAPACITANCE (pF)
fTau, CURRENT GAIN BANDWIDTH (MHz)
0.01
50
TJ = 25°C
fTEST = 1 MHz
200
0
0.001
Figure 9. Collector Saturation Region
250
100
0.0001
Figure 8. Base Emitter Voltage
300
120
IC = 0.1 A
IB, BASE CURRENT (A)
350
140
0.5 A
0.1
IC, COLLECTOR CURRENT (A)
400
0
1A
0.01
10
3A
2A
0.1
10 mS
1
Thermal Limit
0.1
0.01
1
1 mS
100 mS
0.1
1
10
IC, COLLECTOR CURRENT (A)
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 12. Current−Gain Bandwidth Product
Figure 13. Safe Operating Area
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4
100
NSS1C201LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
DIM
A
A1
b
c
D
E
e
L
L1
HE
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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