RoHS NST200F120 / NST200F120-A RoHS SEMICONDUCTOR Nell High Power Products FRED Ultrafast Soft Recovery Diode, 100A × 2 Available RoHS* COMPLIANT FEATURES Fast recovery time characteristic Electrically isolated base plate Large creepage distance between terminal Simplified mechanical designs, rapid assembly Compliant to RoHS Designed and for industrial level DESCRIPTION CIRCUIT CONFIGURATION This SOT-227 modules with FRED rectifier are available in two basic configurations. They are the antiparallel and the parallel configurations. The antiparallel configuration NST200F120-A is used for simple series rectifier and high voltage application. The parallel configuration NST200F120 is used for simple parallel rectifier and high current application. The semiconductor in the SOT-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built. These modules are intended for general applications such as power supplies, battery chargers, electronic welders, motor control, DC chopper, and inverters. 3 4 3 4 2 1 2 1 Parallel NST200F120 Anti-Parallel NST200F120-A APPLICATIONS Switching power supplies Inverters Motor controllers Converters Snubber diodes Uninterruptible power supplies (UPS) Induction heating High speed rectifiers PRODUCT SUMMARY VR 1200 V VF(typical) at 125 ºC 1.8 V trr (typical) 47 ns IF(DC) at TC per diode 93A at 80 ºC ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VR Cathode to anode voltage per leg per module VALUES UNITS 1200 V 93 IF Tc = 80 ºC Single pulse forward current I FSM TJ = 25 ºC 900 RMS isolation voltage, any terminal to case V ISOL Maximum continuous forward current Maximum power dissipation Operating junction and storage temperature range PD 186 t = 1 minute 2500 Tc = 25 ºC 416 Tc = 100 ºC 166 TJ, TStg Page 1 of 5 - 55 to 150 A V W °C RoHS NST200F120 / NST200F120-A RoHS SEMICONDUCTOR Nell High Power Products ELECTRICAL SPECIFICATIONS PARAMETER (TJ = 25 ºC unless otherwise specified) SYMBOL TEST CONDITIONS MIN. TYP. MAX. 1200 - - Cathode to anode breakdown voltage VBR IR = 100 µA IF = 100 A - 2.0 2.5 Maximum forward voltage VFM IF = 200 A - 2.3 - IF = 100 A, TJ = 125 ºC - 1.8 - V R = V R rated - 2 T J = 125°C, V R = V R rated - 2 250 - Maximum reverse leakage current IRM Junction capacitance CT V R = 200V PARAMETER SYMBOL Reverse recovery time Reverse recovery time Reverse recovery time TEST CONDITIONS MIN. TYP. MAX. - 70 90 IF = 1.0 A, dIF/dt = -100 A/µs, VR =30 V, TJ = 25°C - 47 - trr1 TJ = 25 ºC - 420 - trr2 TJ = 125 ºC - 580 - IRRM1 - 7 - 19 - TJ = 25 ºC - 1250 - TJ = 125 ºC - 5350 - Qrr1 Qrr2 THERMAL - MECHANICAL SPECIFICATIONS UNITS ns - TJ = 125 ºC PARAMETER IF= 100A dIF/dt = -200 A/µs VR =800 V TJ = 25 ºC IRRM2 µA mA (TJ = 25 ºC unless otherwise specified) I F = 0.5A, I R = 1.0A, I RR = 250mA (RG#1 CKT) trr V pF 120 DYNAMIC RECOVERY CHARACTERISTICS PERLEG UNITS A nC (TJ = 25 ºC unless otherwise specified) SYMBOL MIN. TYP. - - 0.3 - - 0.15 - 0.05 - Weight - 30 - g Mounting torque - - 1.1 Nm Junction to case, single leg conducting Junction to case, both legs conducting Case to sink, flat, greased surface RthJC RthCS Page 2 of 5 MAX. UNITS ºC/W K/W RoHS NST200F120 / NST200F120-A RoHS SEMICONDUCTOR Nell High Power Products Fig.1 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration 0.9 0.40 0.35 0.7 0.30 0.25 0.5 Note: 0.20 PDM Thermal impedance(°C/W), Z θJC 0.45 0.3 0.15 t1 t2 0.10 Duty Factor D =t 1 /t 2 Peak T J = PDM xZ θ JC +T C 0.1 0.05 SINGLE PULSE 0.05 0 10-4 10-5 10-2 10-3 0.1 1 Rectangular pulse duration (seconds) Fig.2 Forward current vs. forward voltage Fig.3 Reverse recovery time vs. current rate of change 700 Reverse recovery time, t rr (ns) 300 200 (A) Forward current, I F 250 T J =150°C 150 100 T J =25°C T J =125°C 50 T J =125°C T R =800V 600 200A 500 100A 400 50A 300 200 100 T J =-55°C 0 0 0 0.5 1 1.5 2.5 2 3 0 Anode-to-cathode voltage (V), V F 600 800 1000 1200 Fig 5. Reverse recovery current vs. current rate of change 200A 100A 6000 50A 4000 2000 80 T J =125°C T R =800V 70 200A 60 50 (A) Reverse recovery current, I RRM T J =125°C T R =800V (nC) Reverse recovery charge, Q rr 12000 8000 400 Current rate of change(A/μs), -di F /dt Fig.4 Reverse recovery charge vs. current rate of change 10000 200 40 100A 30 20 50A 10 0 0 0 200 400 600 800 1000 1200 0 Current rate of change (A/μs), -di F /dt 200 400 600 800 1000 1200 Current rate of change (A/μs), -di F /dt Page 3 of 5 RoHS NST200F120 / NST200F120-A RoHS SEMICONDUCTOR Nell High Power Products Fig.7 Maximum average forward current vs. case temperature Fig6. Dynamic parameters vs. junction temperature 140 1.4 Duty cycle = 0.5 T J =175°C trr 100 1.0 IRRM 0.8 l F(AV) (A) (Normalized to 1000A/µs) Dynamic parameters, K f 120 Qrr 1.2 trr 0.6 80 60 50 0.4 40 Qrr 20 0.2 0.0 0 25 50 75 100 125 0 25 150 50 75 Junction temperature (°C),T J 100 Case temperature (°C) Fig.8 Junction capacitance vs. reverse voltage Fig.9 Reverse recovery parameter test circuit VR = 200 V 1000 800 (pF) Junction capacitance, C J 1200 0.01Ω L = 70 µH 600 D.U.T. 400 dIF /dt adjust D IRFP250 G 200 S 0 6 10 125 100 200 reverse voltage (V), V R Fig.10 Reverse recovery waveform and definitions (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M /dt (5) 0.75 I RRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. Page4 of 5 (4) Qrr - area under curve defined by trr and IRRM Qrr = t rrx l RRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr 150 RoHS NST200F120 / NST200F120-A RoHS SEMICONDUCTOR Nell High Power Products SOT-227 38.30 (1.508) 37.80 (1.488) Chamfer 2.00 (0.079) x 45 4 x M4 nuts ?4.40 (0.173) ?4.20 (0.165) -A3 4 25.70 (1.012) 25.20 (0.992) 6.25 (0.246) 12.50 (0.492) -B1 2 R full 7.50 (0.295) 15.00 (0.590) 2.10 (0.082) 1.90 (0.075) 30.20 (1.189) 29.80 (1.173) 8.10 (0.319) 4x 7.70 (0.303) 0.25 (0.010) M C A M B M 2.10 (0.082) 1.90 (0.075) 12.30 (0.484) 11.80 (0.464) -C0.12 (0.005) All dimensions in millimeters (inches) Notes • Dimensioning and toleranc ing per ANSI Y14.5M-1982 • Controlling dime nsion: millimeter ORDERING INFORMATION TABLE Device code N ST 200 F 120 1 2 3 4 5 1 - Nell High Power Products 2 - Package indicator (SOT-227) - 3 - Current rating (200 = 200A, 100A x 2) 4 - F = FRED 5 - Voltage rating (120 = 1200 V) 6 - Circuit type, A for Anti-Parallel type Blank for parallel type. Page 5 of 5 family A 6