ON NST857BF3T5G Pnp general purpose transistor Datasheet

NST857BF3T5G
PNP General Purpose
Transistor
The NST857BF3T5G device is a spin−off of our popular
SOT−23/SOT−323/SOT−563/SOT−963 three−leaded device. It is
designed for general purpose amplifier applications and is housed in
the SOT−1123 surface mount package. This device is ideal for
low−power surface mount applications where board space is at a
premium.
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COLLECTOR
3
Features
•
•
•
•
hFE, 220−475
Low VCE(sat), ≤ −0.3 V
Reduces Board Space
This is a Pb−Free Device
1
BASE
2
EMITTER
NST857BF3T5G
MAXIMUM RATINGS
Symbol
Value
Unit
Collector −Emitter Voltage
Rating
VCEO
−45
Vdc
Collector −Base Voltage
VCBO
−50
Vdc
Emitter −Base Voltage
VEBO
−5.0
Vdc
IC
−100
mAdc
Symbol
Max
Unit
Total Device Dissipation, TA = 25°C
Derate above 25°C
PD
(Note 1)
290
2.3
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
(Note 1)
432
°C/W
Total Device Dissipation, TA = 25°C
Derate above 25°C
PD
(Note 2)
347
2.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
(Note 2)
360
°C/W
Thermal Resistance,
Junction−to−Lead 3
RYJL
(Note 2)
143
°C/W
TJ, Tstg
−55 to
+150
°C
Collector Current − Continuous
3
1
SOT−1123
CASE 524AA
STYLE 1
THERMAL CHARACTERISTICS
Characteristic
Junction and Storage Temperature Range
© Semiconductor Components Industries, LLC, 2012
July, 2012 − Rev. 1
MARKING DIAGRAM
5M
5
M
1
= Device Code
= Date Code
ORDERING INFORMATION
Device
NST857BF3T5G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. 100 mm2 1 oz, copper traces.
2. 500 mm2 1 oz, copper traces.
2
Package
Shipping†
SOT−1123 8000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NST857BF3/D
NST857BF3T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector −Emitter Breakdown Voltage (IC = −10 mA)
V(BR)CEO
−45
−
−
V
Collector −Emitter Breakdown Voltage (IC = −10 mA, VEB = 0)
V(BR)CES
−50
−
−
V
Collector −Base Breakdown Voltage (IC = −10 mA)
V(BR)CBO
−50
−
−
V
Emitter −Base Breakdown Voltage (IE = −1.0 mA)
V(BR)EBO
−5.0
−
−
V
ICBO
−
−
−
−
−15
−4.0
nA
mA
−
220
150
290
−
475
−
−
−
−
−0.3
−0.7
−
−
−0.7
−0.9
−
−
−0.6
−
−
−
−0.75
−0.82
fT
100
−
−
MHz
Output Capacitance
(VCB = −10 V, f = 1.0 MHz)
Cobo
−
−
4.5
pF
Input Capacitance
(VEB = −0.5 V, IC = 0 mA, f = 1.0 MHz)
Cibo
−
−
10
pF
Noise Figure
(IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
NF
−
−
10
dB
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current (VCB = −30 V)
Collector Cutoff Current (VCB = −30 V, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mA, VCE = −5.0 V)
(IC = −2.0 mA, VCE = −5.0 V)
hFE
Collector −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
VBE(sat)
Base −Emitter On Voltage
(IC = −2.0 mA, VCE = −5.0 V)
(IC = −10 mA, VCE = −5.0 V)
VBE(on)
−
V
V
V
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
0.16
800
IC/IB = 10
0.14
hFE, DC CURRENT GAIN (V)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.18
VCE(sat) = 150°C
0.12
0.10
0.08
25°C
0.06
0.04
0.02
0.0001
−55°C
0.001
0.01
IC, COLLECTOR CURRENT (A)
0.1
Figure 1. Collector Emitter Saturation Voltage vs.
Collector Current
700
600
150°C (5.0 V)
150°C (1.0 V)
500
25°C (5.0 V)
400
300
200
100
25°C (1.0 V)
−55°C (5.0 V)
−55°C (1.0 V)
0
0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
0.1
Figure 2. DC Current Gain vs. Collector Current
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2
NST857BF3T5G
1.0
0.8
VBE(on), BASE−EMITTER TURN−ON
VOLTAGE (V)
0.9
IC/IB = 10
−55°C
0.7
0.6
25°C
0.5
0.4 150°C
0.3
0.0001
0.001
0.01
VCE = 2.0 V
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
0.4
150°C
0.3
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Turn−On Voltage vs.
Collector Current
1.0
10
IC =
100 mA
0.9
0.8
0.7
50 mA
0.6
0.5
30 mA
0.4
0.3
0.2
0.1
0
0.00001
10 mA
0.0001
0.001
0.01
9
8
7
6
Cib
5
4
3
0
1.0
2.0
3.0
4.0
Ib, BASE CURRENT (A)
Veb, EMITTER BASE VOLTAGE (V)
Figure 5. Saturation Region
Figure 6. Input Capacitance
4.5
Cobo, OUTPUT CAPACITANCE (pF)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.1
Cibo, INPUT CAPACITANCE (pF)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
1.0
4.0
3.5
3.0
2.5
2.0
1.5
Cob
1.0
0.5
0
5
10
15
20
25
Vcb, COLLECTOR BASE VOLTAGE (V)
Figure 7. Output Capacitance
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3
30
5.0
NST857BF3T5G
PACKAGE DIMENSIONS
SOT−1123
CASE 524AA
ISSUE C
−X−
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
MILLIMETERS
DIM MIN
MAX
A
0.34
0.40
b
0.15
0.28
b1 0.10
0.20
c
0.07
0.17
D
0.75
0.85
E
0.55
0.65
0.35
0.40
e
HE
0.95
1.05
L
0.185 REF
L2 0.05
0.15
−Y−
1
3
E
2
TOP VIEW
A
c
HE
SIDE VIEW
3X
b
L2
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.08 X Y
e
2X
3X
b1
L
BOTTOM VIEW
SOLDERING FOOTPRINT*
1.20
3X
0.34
0.26
1
0.38
2X
0.20
PACKAGE
OUTLINE
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
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4
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Sales Representative
NST857BF3/D
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