ON NSVT489AMT1G High current surface mount npn silicon low vce(sat) switching transistor for load management in portable application Datasheet

NST489AMT1,
NSVT489AMT1G
High Current Surface Mount
NPN Silicon Low VCE(sat)
Switching Transistor for
Load Management in
Portable Applications
Features
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30 VOLTS, 3.0 AMPS
NPN TRANSISTOR
 AEC−Q101 Qualified and PPAP Capable
 NSV Prefix for Automotive and Other Applications Requiring

TSOP−6
CASE 318G
STYLE 6
Unique Site and Control Change Requirements
Pb−Free Packages are Available*
COLLECTOR
1, 2, 5, 6
MAXIMUM RATINGS (TA = 25C)
Symbol
Max
Unit
Collector-Emitter Voltage
VCEO
30
V
Collector-Base Voltage
VCBO
50
V
Emitter-Base Voltage
VEBO
5.0
V
IC
2.0
A
ICM
3.0
A
Symbol
Max
Unit
535
4.3
mW
mW/C
Rating
Collector Current − Continuous
Collector Current − Peak
3
BASE
4
EMITTER
DEVICE MARKING
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
TA = 25C
Derate above 25C
PD (Note 1)
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 1)
Total Device Dissipation
TA = 25C
Derate above 25C
PD (Note 2)
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2)
Thermal Resistance,
Junction−to−Lead #1
RqJL (Note 1)
RqJL (Note 2)
Total Device Dissipation
(Single Pulse < 10 s)
PDsingle
(Notes 2 and 3)
1.75
TJ, Tstg
−55 to +150
Junction and Storage
Temperature Range
C/W
234
1.180
9.4
W
mW/C
C/W
106
110
50
C/W
C/W
W
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 with 1 oz and 3.9 mm2 of copper area.
2. FR−4 with 1 oz and 645 mm2 of copper area.
3. Refer to Figure 8.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 8
N2 M G
G
1
N2
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
ORDERING INFORMATION
Package
Shipping†
NST489AMT1
TSSOP−6
3,000 /
Tape & Reel
NST489AMT1G
TSSOP−6
(Pb−Free)
3,000 /
Tape & Reel
NSVT489AMT1G
TSSOP−6
(Pb−Free)
3,000 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NST489AMT1/D
NST489AMT1, NSVT489AMT1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector −Emitter Breakdown Voltage (IC = 10 mA, IB = 0)
V(BR)CEO
30
−
−
V
Collector−Base Breakdown Voltage (IC = 0.1 mA, IE = 0)
V(BR)CBO
50
−
−
V
Emitter −Base Breakdown Voltage (IE = 0.1 mA, IC = 0)
V(BR)EBO
5.0
−
−
V
Collector Cutoff Current (VCB = 30 V, IE = 0)
ICBO
−
−
0.1
mA
Collector−Emitter Cutoff Current (VCES = 30 V)
ICES
−
−
0.1
mA
Emitter Cutoff Current (VEB = 4.0 V)
IEBO
−
−
0.1
mA
hFE
300
300
200
−
500
−
−
900
−
VCE(sat)
−
−
−
0.10
0.06
0.05
0.200
0.125
0.075
V
Base −Emitter Saturation Voltage (Note 4) (IC = 1.0 A, IB = 0.1 A)
VBE(sat)
−
−
1.1
V
Base −Emitter Turn−on Voltage (Note 4) (IC = 1.0 A, VCE = 2.0 V)
VBE(on)
−
−
1.1
V
fT
200
300
−
MHz
Cobo
−
−
15
pF
Characteristic
OFF CHARACTERISTICS
ON CHARACTERISTICS
(IC = 1.0 mA, VCE = 5.0 V)
(IC = 0.5 A, VCE = 5.0 V)
(IC = 1.0 A, VCE = 5.0 V)
DC Current Gain (Note 4)
Collector −Emitter Saturation Voltage (Note 4)
(IC = 1.0 A, IB = 100 mA)
(IC = 0.5 A, IB = 50 mA)
(IC = 0.1 A, IB = 1.0 mA)
Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz
Output Capacitance (f = 1.0 MHz)
4. Pulsed Condition: Pulse Width  300 msec, Duty Cycle  2%.
1.0
0.9
IC = 2 A
0.8
0.7
0.8
0.7
IC = 1 A
0.6
VCE(sat) (V)
VCE(sat) (V)
1.0
0.9
0.5
0.4
0.3
0
0.5
Ic/Ib = 100
0.4
0.3
IC = 500 mA
0.2
0.1
0.6
Ic/Ib = 10
0.2
0.1
IC = 100 mA
0.001
0.01
Ib (A)
0.1
0
0.2
0.001
700
600
1
2
Figure 2. VCE (sat) versus Ic
1.2
VCE = 5 V
+125C
VCE = 5 V
1.0
+25C
hFE
VBE(on) (V)
500
400
300
0.1
Ic (A)
Figure 1. VCE (sat) versus Ib
800
0.01
−55C
0.8
0.6
0.4
−55C
+25C
+125C
200
0.2
100
0
0.001
0.01
Ic (A)
0.1
1
0
2
0.001
Figure 3. hFE versus Ic
0.01
Ic (A)
0.1
Figure 4. VBE(on) versus Ic
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2
1
2
NST489AMT1, NSVT489AMT1G
1.2
VBE (sat) (V)
1.0
IC COLLECTOR CURRENT (A)
10.00
Ic/Ib = 10
0.8
Ic/Ib = 100
0.6
0.4
0.2
0
0.001
0.01
1
0.1
2
Ic (A)
3.0
1.00
1 ms
10 ms
100 ms
0.10
1s
SINGLE PULSE Tamb = 25C
0.01
0.10
1.00
10.00
VCE(sat) (V)
Figure 5. VBE(sat) versus Ic
dc
100.00
Figure 6. Safe Operating Area
fT, CURRENT−GAIN BANDWIDTH
PRODUCT (MHz)
1000
100
10
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
r(t), NORMALIZED TRANSIENT THERMAL
RESISTANCE
Figure 7. fT (MHZ) versus IC (mA) VCE = 5.0 V
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (sec)
1.0
Figure 8. Normalized Thermal Response
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3
10
100
1000
NST489AMT1, NSVT489AMT1G
PACKAGE DIMENSIONS
TSOP−6
CASE 318G−02
ISSUE U
D
H
6
5
ÉÉ
E1
1
NOTE 5
2
L2
4
GAUGE
PLANE
E
3
L
b
DETAIL Z
e
0.05
M
A
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM
LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR
GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D
AND E1 ARE DETERMINED AT DATUM H.
5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE.
SEATING
PLANE
DIM
A
A1
b
c
D
E
E1
e
L
L2
M
c
A1
DETAIL Z
MIN
0.90
0.01
0.25
0.10
2.90
2.50
1.30
0.85
0.20
0
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.38
0.50
0.18
0.26
3.00
3.10
2.75
3.00
1.50
1.70
0.95
1.05
0.40
0.60
0.25 BSC
10
−
STYLE 6:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
RECOMMENDED
SOLDERING FOOTPRINT*
6X
0.60
6X
3.20
0.95
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NST489AMT1/D
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