NTP22N06, NTB22N06 Power MOSFET 22 Amps, 60 Volts N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Typical Applications • • • • 22 AMPERES 60 VOLTS RDS(on) = 60 mΩ Power Supplies Converters Power Motor Controls Bridge Circuits N−Channel D MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 60 Vdc Drain−to−Gate Voltage (RGS = 10 MΩ) VDGR 60 Vdc Rating Gate−to−Source Voltage − Continuous − Non−Repetitive (tpv10 ms) Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tpv10 μs) Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vdc, L = 1.0 mH, VDS = 60 Vdc, IL(pk) = 12 A, RG = 25 Ω) Thermal Resistance − Junction−to−Case − Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds G Vdc VGS VGS "20 "30 ID ID 22 10 66 Adc PD 60 0.4 W W/°C TJ, Tstg −55 to +175 °C 72 mJ IDM EAS RθJC RθJA 2.5 62.5 TL 260 4 S 4 1 2 3 Apk 1 D2PAK CASE 418B STYLE 2 TO−220AB CASE 221A STYLE 5 2 3 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 Drain °C/W NTx22N06 LLYWW NTx22N06 LLYWW °C 1 Gate 3 Source 2 Drain 1 Gate NTx22N06 x LL Y WW 2 Drain 3 Source = Device Code = P or B = Location Code = Year = Work Week ORDERING INFORMATION Device © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 2 1 Package Shipping NTP22N06 TO−220AB 50 Units/Rail NTB22N06 D2PAK 50 Units/Rail NTB22N06T4 D2PAK 800/Tape & Reel Publication Order Number: NTP22N06/D NTP22N06, NTB22N06 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 60 − 71 71 − − − − − − 1.0 10 − − ±100 nAdc 2.0 − 3.09 7.0 4.0 − Vdc mV/°C − 52 60 − − 1.2 1.11 1.6 − gFS − 12 − mhos Ciss − 502 700 pF Coss − 160 225 Crss − 46 65 td(on) − 12 25 tr − 39 80 td(off) − 18 40 tf − 34 70 QT − 15.5 32 Q1 − 3.4 − Q2 − 7.7 − VSD − − 1.07 1.0 1.15 − Vdc trr − 43 − ns ta − 32 − tb − 11 − QRR − 0.071 − OFF CHARACTERISTICS V(BR)DSS Drain−to−Source Breakdown Voltage (Note 1) (VGS = 0 Vdc, ID = 250 μAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C μAdc ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (Note 1) (VDS = VGS, ID = 250 μAdc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−Resistance (Note 1) (VGS = 10 Vdc, ID = 11 Adc) RDS(on) Static Drain−to−Source On−Voltage (Note 1) (VGS = 10 Vdc, ID = 22 Adc) (VGS = 10 Vdc, ID = 11 Adc, TJ = 150°C) VDS(on) Forward Transconductance (Note 1) (VDS = 7.0 Vdc, ID = 11 Adc) mΩ Vdc DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2) Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = 30 Vdc, ID = 22 Adc, VGS = 10 Vdc, RG = 9.1 Ω) (Note 1) Fall Time Gate Charge (VDS = 48 Vdc, ID = 22 Adc, VGS = 10 Vdc) (Note 1) ns nC SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 22 Adc, VGS = 0 Vdc) (Note 1) (IS = 22 Adc, VGS = 0 Vdc, TJ = 150°C) Reverse Recovery Time (IS = 22 Adc, VGS = 0 Vdc, dIS/dt = 100 A/μs) (Note 1) Reverse Recovery Stored Charge 1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 μC NTP22N06, NTB22N06 50 40 40 8V 9V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) VGS = 10 V 7.5 V 7V 30 6.5 V 20 6V 5.5 V 10 0 5V 0 4 5 6 7 2 3 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1 30 20 TJ = 25°C 10 TJ = 100°C 0 8 VDS ≥ 10 V 2 3 4 5 6 7 8 9 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 0.12 TJ = 100°C 0.10 0.08 TJ = 25°C 0.06 0.04 TJ = −55°C 0.02 0 0 20 10 30 40 50 0.16 VGS = 15 V 0.14 0.12 0.10 TJ = 100°C 0.08 TJ = 25°C 0.06 0.04 TJ = −55°C 0.02 0 0 20 10 30 40 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance versus Gate−to−Source Voltage Figure 4. On−Resistance versus Drain Current and Gate Voltage 10000 2 ID = 11 A VGS = 10 V IDSS, LEAKAGE (nA) 1.8 10 Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (Ω) VGS = 10 V 0.14 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN−TO−SOURCE RESISTANCE (Ω) Figure 1. On−Region Characteristics 0.16 TJ = −55°C 1.6 1.4 1.2 1 50 VGS = 0 V TJ = 150°C 1000 100 TJ = 100°C 10 0.8 0.6 −50 −25 0 25 50 75 100 125 150 175 1 0 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 3 60 1600 VGS = 0 V VDS = 0 V TJ = 25°C C, CAPACITANCE (pF) 1400 Ciss 1200 1000 Crss 800 Ciss 600 400 Coss 200 Crss 0 10 5 VGS 0 VDS 5 10 15 20 25 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) NTP22N06, NTB22N06 12 QT 10 VGS 8 Q1 6 4 2 ID = 22 A TJ = 25°C 0 0 4 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1 tr td(off) td(on) 1 10 VGS = 0 V TJ = 25°C 20 16 12 8 4 0 0.6 100 RG, GATE RESISTANCE (Ω) dc 10 10 ms 1 ms 100 μs 1 10 μs RDS(on) Limit Thermal Limit Package Limit 0.1 0.1 1 0.76 0.84 1 0.92 1.08 1.16 10 100 Figure 10. Diode Forward Voltage versus Current EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) ID, DRAIN CURRENT (AMPS) VGS = 20 V SINGLE PULSE TC = 25°C 0.68 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance 100 20 16 Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge IS, SOURCE CURRENT (AMPS) t, TIME (ns) 100 10 12 24 VDS = 30 V ID = 22 A VGS = 10 V tf 8 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 1000 Q2 80 ID = 12 A 60 40 20 0 25 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 50 75 100 125 150 175 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 4 r(t). EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) NTP22N06, NTB22N06 1.0 D = 0.5 0.2 0.1 0.1 0.05 P(pk) 0.01 t1 0.02 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.00001 0.0001 0.001 0.01 t, TIME (μs) RθJC(t) = r(t) RθJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RθJC(t) 0.1 Figure 13. Thermal Response di/dt IS trr ta tb TIME 0.25 IS tp IS Figure 14. Diode Reverse Recovery Waveform http://onsemi.com 5 1 10 NTP22N06, NTB22N06 PACKAGE DIMENSIONS TO−220 THREE−LEAD TO−220AB CASE 221A−09 ISSUE AA SEATING PLANE −T− B F C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 5: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 GATE DRAIN SOURCE DRAIN D2PAK CASE 418B−03 ISSUE D C E −B− V 4 1 2 A S 3 −T− SEATING PLANE K J G D H 3 PL 0.13 (0.005) M T B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E G H J K S V INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.575 0.625 0.045 0.055 STYLE 2: PIN 1. 2. 3. 4. http://onsemi.com 6 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 14.60 15.88 1.14 1.40 NTP22N06, NTB22N06 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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