ON NTD4804NT4G Power mosfet 30 v, 117 a, single n--channel, dpak/ipak Datasheet

NTD4804N
Power MOSFET
30 V, 117 A, Single N--Channel, DPAK/IPAK
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb--Free Devices
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V(BR)DSS
Applications
• CPU Power Delivery
• DC--DC Converters
• Low Side Switching
RDS(on) MAX
4.0 mΩ @ 10 V
30 V
D
Value
Unit
VDSS
30
V
VGS
20
V
ID
19
A
Continuous Drain
Current (RθJA) (Note 1)
TA = 25°C
Power Dissipation
(RθJA) (Note 1)
TA = 25°C
PD
2.5
W
Continuous Drain
Current (RθJA) (Note 2)
TA = 25°C
ID
14.5
A
Power Dissipation
(RθJA) (Note 2)
TA = 85°C
Steady
State
TA = 85°C
11
PD
1.43
W
Continuous Drain
Current (RθJC)
(Note 1)
TC = 25°C
ID
117
A
Power Dissipation
(RθJC) (Note 1)
TC = 25°C
TC = 85°C
tp=10ms
Current Limited by Package
91
PD
93.75
TA = 25°C
IDM
230
A
TA = 25°C
IDmaxPkg
45
A
TJ, Tstg
-- 55 to
175
°C
Operating Junction and Storage Temperature
Source Current (Body Diode)
S
15
TA = 25°C
Pulsed Drain Current
N--Channel
G
4
4
1 2
1
3
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
2
3
CASE 369AD
CASE 369D
3 IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
W
IS
78
A
Drain to Source dV/dt
dV/dt
6.0
V/ns
Single Pulse Drain--to--Source Avalanche
Energy (VDD = 24 V, VGS = 10 V,
L = 1.0 mH, IL(pk) = 30 A, RG = 25 Ω)
EAS
450
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
YWW
48
04NG
Gate--to--Source Voltage
Symbol
YWW
48
04NG
Drain--to--Source Voltage
117 A
5.5 mΩ @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
ID MAX
4
Drain
YWW
48
04NG
•
•
•
•
2
1 2 3
1 Drain 3
Gate Source Gate Drain Source 1 2 3
Gate Drain Source
Y
WW
4804N
G
= Year
= Work Week
= Device Code
= Pb--Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
June, 2010 -- Rev. 6
1
Publication Order Number:
NTD4804N/D
NTD4804N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction--to--Case (Drain)
Parameter
RθJC
1.6
°C/W
Junction--to--TAB (Drain)
RθJC--TAB
3.5
Junction--to--Ambient -- Steady State (Note 1)
RθJA
60
Junction--to--Ambient -- Steady State (Note 2)
RθJA
105
1. Surface--mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface--mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
Drain--to--Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain--to--Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate--to--Source Leakage Current
V
26
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 250 mA
100
mA
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain--to--Source On Resistance
RDS(on)
gFS
2.5
7.6
VGS = 10 to 11.5 V
VGS = 4.5 V
Forward Transconductance
1.5
ID = 30 A
3.4
ID = 15 A
3.4
ID = 30 A
4.7
ID = 15 A
4.6
VDS = 15 V, ID = 15 A
V
mV/°C
4.0
mΩ
5.5
23
S
4490
pF
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate--to--Source Charge
QGS
Gate--to--Drain Charge
QGD
Total Gate Charge
QG(TOT)
VGS = 0 V, f = 1.0 MHz,
VDS = 12 V
952
556
30
VGS = 4.5 V, VDS = 15 V,
ID = 30 A
40
nC
5.5
13
13
VGS = 11.5 V, VDS = 15 V,
ID = 30 A
73
nC
18
ns
SWITCHING CHARACTERISTICS (Note 4)
Turn--On Delay Time
Rise Time
Turn--Off Delay Time
Fall Time
Turn--On Delay Time
Rise Time
Turn--Off Delay Time
Fall Time
td(on)
tr
td(off)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 Ω
20
24
tf
8
td(on)
10
tr
td(off)
VGS = 11.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 Ω
tf
19
35
5
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
ns
NTD4804N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
TJ = 25°C
0.81
1.2
V
TJ = 125°C
0.72
DRAIN--SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Time
VGS = 0 V,
IS = 30 A
34
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 30 A
ns
19
15
QRR
30
nC
Source Inductance
LS
2.49
nH
Drain Inductance, DPAK
LD
0.0164
Drain Inductance, IPAK
LD
Gate Inductance
LG
3.46
Gate Resistance
RG
0.6
PACKAGE PARASITIC VALUES
TA = 25°C
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3
1.88
Ω
NTD4804N
TYPICAL PERFORMANCE CURVES
240
TJ = 25°C
ID, DRAIN CURRENT (AMPS)
200
4.5 V
160
4V
120
80
3.6 V
40
3.2 V
0
1
3
2
4
5
TJ = 125°C
TJ = 25°C
40
TJ = --55°C
0
1
2
3
4
6
5
7
Figure 2. Transfer Characteristics
ID = 30 A
TJ = 25°C
0.01
TJ = 25°C
0.0075
0.007
0.006
0.005
VGS = 4.5 V
0.005
VGS = 11.5 V
0.0025
0.004
RDS(on), DRAIN--TO--SOURCE RESISTANCE
(NORMALIZED)
80
Figure 1. On--Region Characteristics
0.008
2
8
6
4
10
0
10
20
30
40
50
60
70
80
90 100
VGS, GATE--TO--SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On--Resistance vs. Gate--to--Source
Voltage
Figure 4. On--Resistance vs. Drain Current and
Gate Voltage
1.7
1.5
120
VGS, GATE--TO--SOURCE VOLTAGE (VOLTS)
0.009
1.6
160
VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
0.010
0.003
VDS ≥ 10 V
200
0
RDS(on), DRAIN--TO--SOURCE RESISTANCE (Ω)
0
RDS(on), DRAIN--TO--SOURCE RESISTANCE (Ω)
10 V
6V
100,000
VGS = 0 V
ID = 30 A
VGS = 10 V
IDSS, LEAKAGE (nA)
ID, DRAIN CURRENT (AMPS)
240
1.4
TJ = 175°C
10,000
1.3
1.2
1.1
1.0
1000
TJ = 125°C
0.9
0.8
0.7
--50 --25
0
25
50
75
100
125
150
175
100
0
5
10
15
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
Figure 5. On--Resistance Variation with
Temperature
Figure 6. Drain--to--Source Leakage Current
vs. Drain Voltage
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4
20
NTD4804N
6000
VGS , GATE--TO--SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES
TJ = 25°C
Ciss
C, CAPACITANCE (pF)
5000
4000
Ciss
3000
Crss
2000
Coss
1000
0
15
VDS = 0 V
10
VGS = 0 V
0
5
5
VGS
VDS
Crss
10
15
20
25
30
5
QT
4
2
1
0
IS, SOURCE CURRENT (AMPS)
t, TIME (ns)
tr
td(off)
tf
1
td(on)
1
0
10
RG, GATE RESISTANCE (OHMS)
15
10
5
1 ms
10 ms
dc
10
1
VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
100
EAS, SINGLE PULSE DRAIN--TO--SOURCE
AVALANCHE ENERGY (mJ)
I D, DRAIN CURRENT (AMPS)
100 ms
0.1
0.2
0.4
0.6
0.8
1.0
Figure 10. Diode Forward Voltage vs. Current
100
1
TJ = 25°C
VSD, SOURCE--TO--DRAIN VOLTAGE (VOLTS)
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
30
20
0
0
100
1000
10
10
20
15
25
QG, TOTAL GATE CHARGE (nC)
VGS = 0 V
25
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
VGS = 20 V
SINGLE PULSE
TC = 25°C
5
30
VDD = 15 V
ID = 30 A
VGS = 11.5 V
10
ID = 30 A
TJ = 25°C
Figure 8. Gate--To--Source and Drain--To--Source
Voltage vs. Total Charge
Figure 7. Capacitance Variation
100
Q2
3
GATE--TO--SOURCE OR DRAIN--TO--SOURCE VOLTAGE (VOLTS)
1000
Q1
500
ID = 30 A
400
300
200
100
0
25
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
175
NTD4804N
TYPICAL PERFORMANCE CURVES
I D, DRAIN CURRENT (AMPS)
100
100°C
125°C
25°C
10
1
1
100
10
PULSE WIDTH (ms)
1000
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
Figure 13. Avalanche Characteristics
1.0
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
SINGLE PULSE
0.01
1.0E--05
1.0E--04
t1
t2
DUTY CYCLE, D = t1/t2
1.0E--03
1.0E--02
t, TIME (ms)
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) -- TC = P(pk) RθJC(t)
1.0E--01
1.0E+00
1.0E+01
Figure 14. Thermal Response
ORDERING INFORMATION
Package
Shipping†
NTD4804NT4G
DPAK
(Pb--Free)
2500/Tape & Reel
NTD4804N--1G
IPAK
(Pb--Free)
75 Units/Rail
NTD4804N--35G
IPAK Trimmed Lead
(3.5  0.15 mm)
(Pb--Free)
75 Units/Rail
Order Number
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
NTD4804N
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA--01
ISSUE B
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN
DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
c
b
0.005 (0.13)
M
C
H
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 90° CW
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
------ 0.040
0.155
------
6.17
0.243
SCALE 3:1
mm 
inches
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
-----1.01
3.93
------
NTD4804N
PACKAGE DIMENSIONS
3.5 MM IPAK, STRAIGHT LEAD
CASE 369AD--01
ISSUE O
E
A
E3
L2
E2
A1
D2
D
L1
NOTES:
1.. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2.. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30mm FROM TERMINAL TIP.
4. DIMENSIONS D AND E DO NOT INCLUDE
MOLD GATE OR MOLD FLASH.
DIM
A
A1
A2
b
b1
D
D2
E
E2
E3
e
L
L1
L2
L
T
SEATING
PLANE
A1
b1
2X
e
A2
3X
E2
b
0.13
M
T
D2
MILLIMETERS
MIN
MAX
2.19
2.38
0.46
0.60
0.87
1.10
0.69
0.89
0.77
1.10
5.97
6.22
4.80
-----6.35
6.73
4.70
-----4.45
5.46
2.28 BSC
3.40
3.60
-----2.10
0.89
1.27
OPTIONAL
CONSTRUCTION
IPAK (STRAIGHT LEAD DPAK)
CASE 369D--01
ISSUE B
C
B
V
E
R
4
Z
A
S
1
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3
--T-SEATING
PLANE
K
J
F
D
G
H
M
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
------
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
------
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
3 PL
0.13 (0.005)
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
T
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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NTD4804N/D
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