NTD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com V(BR)DSS RDS(on) MAX Applications • CPU Power Delivery • DC−DC Converters • Low Side Switching ID MAX 9.0 mW @ 10 V 30 V 58 A 12.5 mW @ 4.5 V D MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS "20 V ID 11.5 A Continuous Drain Current (RqJA) (Note 1) TA = 25°C Power Dissipation (RqJA) (Note 1) TA = 25°C PD 2.0 W Continuous Drain Current (RqJA) (Note 2) TA = 25°C ID 9.0 A 9.0 TA = 85°C 4 1 2 7.0 PD 1.3 Continuous Drain Current (RqJC) (Note 1) TC = 25°C ID 58 Power Dissipation (RqJC) (Note 1) TC = 25°C PD 52 W TA = 25°C IDM 130 A TA = 25°C IDmaxPkg 45 A Operating Junction and Storage Temperature TJ, Tstg −55 to 175 °C IS 43 A dV/dt 6.0 V/ns Single Pulse Drain−to−Source Avalanche Energy (VDD = 24 V, VGS = 10 V, L = 1.0 mH, IL(pk) = 15 A, RG = 25 W) EAS 112.5 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Pulsed Drain Current tp=10ms Current Limited by Package Source Current (Body Diode) Drain to Source dV/dt 1 3 TA = 25°C TC = 85°C 4 W A 45 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. DPAK CASE 369C (Bent Lead) STYLE 2 2 3 3 IPAK IPAK CASE 369AD CASE 369D (Straight Lead) (Straight Lead DPAK) MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 Drain 4 Drain YWW 48 09NHG Steady State S YWW 48 09NHG Power Dissipation (RqJA) (Note 2) TA = 85°C N−Channel G YWW 48 09NHG Parameter 2 1 2 3 1 Drain 3 Gate Source Gate Drain Source 1 2 3 Gate Drain Source Y = Year WW = Work Week 4809NH= Device Code G = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 3 1 Publication Order Number: NTD4809NH/D NTD4809NH THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction−to−Case (Drain) Parameter RqJC 2.9 °C/W Junction−to−TAB (Drain) RqJC−TAB 3.5 Junction−to−Ambient − Steady State (Note 1) RqJA 74 Junction−to−Ambient − Steady State (Note 2) RqJA 116 1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V 25 VGS = 0 V, VDS = 24 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 IGSS VDS = 0 V, VGS = "20 V VGS(TH) VGS = VDS, ID = 250 mA mA "100 nA 2.5 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance VGS(TH)/TJ RDS(on) gFS 1.5 5.7 VGS = 10 to 11.5 V ID = 30 A 7.0 ID = 15 A 7.0 VGS = 4.5 V ID = 30 A 10.45 ID = 15 A 9.95 VDS = 15 V, ID = 15 A mV/°C 9.0 mW 12.5 9.0 S 1596 pF CHARGES AND CAPACITANCES Input Capacitance Ciss VGS = 0 V, f = 1.0 MHz, VDS = 12 V Output Capacitance Coss Reverse Transfer Capacitance Crss 190 Total Gate Charge QG(TOT) 12.5 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge Total Gate Charge 15 nC VGS = 4.5 V, VDS = 15 V, ID = 30 A 2.4 VGS = 11.5 V, VDS = 15 V, ID = 30 A 29.3 nC 12.0 ns QGD QG(TOT) 331 5.3 5.1 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 20 14 tf 5.0 td(on) 7.0 tr td(off) VGS = 11.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 18 22 3.0 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns NTD4809NH ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit TJ = 25°C 0.95 1.2 V TJ = 125°C 0.83 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD tRR Charge Time ta Discharge Time tb Reverse Recovery Time VGS = 0 V, IS = 30 A 15.6 VGS = 0 V, dIs/dt = 100 A/ms, IS = 30 A ns 10.6 5.0 QRR 7.5 nC Source Inductance LS 2.49 nH Drain Inductance, DPAK LD 0.0164 Drain Inductance, IPAK LD Gate Inductance LG 3.46 Gate Resistance RG 0.75 PACKAGE PARASITIC VALUES TA = 25°C http://onsemi.com 3 1.88 W NTD4809NH TYPICAL PERFORMANCE CURVES ID, DRAIN CURRENT (AMPS) 80 5.5 V to 10 V 90 4.5 V VDS ≥ 10 V TJ = 25°C ID, DRAIN CURRENT (AMPS) 100 80 70 60 4V 50 3.8 V 40 3.6 V 30 3.4 V 20 3.2 V 3V 10 0 50 40 30 TJ = 125°C 20 TJ = 25°C 10 TJ = −55°C 1 4 3 2 5 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.013 0.012 0.011 0.010 0.009 0.008 0.007 1.6 1.5 1.4 5 Figure 2. Transfer Characteristics 0.014 1.8 1.7 4 Figure 1. On−Region Characteristics ID = 30 A TJ = 25°C 3.5 3 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 0.015 0.006 2 1 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 4.5 5.5 6.5 7.5 8.5 9.5 10.5 11.5 0.020 TJ = 25°C 0.018 0.016 0.014 VGS = 4.5 V 0.012 0.010 0.008 VGS = 11.5 V 0.006 0.004 0.002 0 10 15 20 25 30 35 40 45 50 55 60 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10000 VGS = 0 V ID = 30 A VGS = 10 V IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 60 0 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 70 1.3 1.2 1.1 1.0 0.9 0.8 1000 TJ = 150°C 100 TJ = 125°C 10 1 0.7 0.6 −50 −25 TJ = 25°C 0.1 0 25 50 75 100 125 150 175 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Drain Voltage http://onsemi.com 4 30 NTD4809NH TYPICAL PERFORMANCE CURVES VGS , GATE−TO−SOURCE VOLTAGE (VOLTS) 2000 C, CAPACITANCE (pF) TJ = 25°C Ciss 1500 1000 500 Coss Crss 0 0 5 10 15 20 25 30 DRAIN−TO−SOURCE VOLTAGE (VOLTS) 12 QT 10 VGS 8 6 Qgs 4 VDD = 15 V 0 V ≤ VGS ≤ 11.5 V ID = 30 A TJ = 25°C 2 0 0 Figure 7. Capacitance Variation 10 15 20 25 Qg, TOTAL GATE CHARGE (nC) 30 30 IS, SOURCE CURRENT (AMPS) t, TIME (ns) 5 Figure 8. Gate−to−Source Voltage vs. Total Charge 100 tr td(off) 10 td(on) tf VDD = 15 V ID = 30 A VGS = 11.5 V 1 10 RG, GATE RESISTANCE (OHMS) VGS = 0 V 25 100 15 10 5 Figure 9. Resistive Switching Time Variation vs. Gate Resistance 10 ms 100 ms 1 ms RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 10 ms dc 1 0.1 10 1 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 100 EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) VGS = 20 V SINGLE PULSE TC = 25°C 10 0.6 0.7 0.8 0.9 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) 1.0 Figure 10. Diode Forward Voltage vs. Current 1000 100 TJ = 25°C 20 0 0.5 1 I D, DRAIN CURRENT (AMPS) Qgd 120 ID = 15 A 100 80 60 40 20 0 25 Figure 11. Maximum Rated Forward Biased Safe Operating Area 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 175 NTD4809NH TYPICAL PERFORMANCE CURVES I D, DRAIN CURRENT (AMPS) 100 25°C 100°C 125°C 10 1 1 10 100 PULSE WIDTH (ms) 1000 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 13. Avalanche Characteristics 1.0 D = 0.5 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 SINGLE PULSE 0.01 1.0E−05 1.0E−04 t1 t2 DUTY CYCLE, D = t1/t2 1.0E−03 1.0E−02 t, TIME (ms) RqJC(t) = r(t) RqJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RqJC(t) 1.0E−01 1.0E+00 1.0E+01 Figure 14. Thermal Response ORDERING INFORMATION Package Shipping † NTD4809NHT4G DPAK (Pb−Free) 2500 / Tape & Reel NTD4809NH−1G IPAK (Pb−Free) 75 Units / Rail NTD4809NH−35G IPAK Trimmed Lead (3.5 ± 0.15 mm) (Pb−Free) 75 Units / Rail Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 NTD4809NH PACKAGE DIMENSIONS IPAK (STRAIGHT LEAD DPAK) CASE 369D−01 ISSUE B B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C E R 4 DIM A B C D E F G H J K R S V Z Z A S 1 2 3 −T− SEATING PLANE K J F H D M T 3.5 MM IPAK, STRAIGHT LEAD CASE 369AD−01 ISSUE O A E E3 L2 E2 A1 D2 D L1 L T SEATING PLANE A1 b1 2X e A2 3X b 0.13 M MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 3 PL 0.13 (0.005) G INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− E2 T D2 OPTIONAL CONSTRUCTION http://onsemi.com 7 NOTES: 1.. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2.. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30mm FROM TERMINAL TIP. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD GATE OR MOLD FLASH. DIM A A1 A2 b b1 D D2 E E2 E3 e L L1 L2 MILLIMETERS MIN MAX 2.19 2.38 0.46 0.60 0.87 1.10 0.69 0.89 0.77 1.10 5.97 6.22 4.80 −−− 6.35 6.73 4.70 −−− 4.45 5.46 2.28 BSC 3.40 3.60 −−− 2.10 0.89 1.27 NTD4809NH PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C−01 ISSUE O C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE −T− E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D 2 PL G 0.13 (0.005) M T MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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