ON NTD4815N-1G Power mosfet 30 v, 35 a, single n--channel, dpak/ipak Datasheet

NTD4815N
Power MOSFET
30 V, 35 A, Single N--Channel, DPAK/IPAK
Features
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb--Free Devices
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V(BR)DSS
Applications
RDS(ON) MAX
15 mΩ @ 10 V
30 V
• CPU Power Delivery
• DC--DC Converters
• High Side Switching
ID MAX
35 A
25 mΩ @ 4.5 V
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Value
Unit
VDSS
30
V
VGS
±20
V
ID
8.5
A
Continuous Drain
Current RθJA
(Note 1)
TA = 25°C
Power Dissipation
RθJA (Note 1)
TA = 25°C
PD
1.92
W
Continuous Drain
Current RθJA
(Note 2)
TA = 25°C
ID
6.9
A
6.5
1 2
TA = 25°C
PD
1.26
W
Continuous Drain
Current RθJC
(Note 1)
TC = 25°C
ID
35
A
Power Dissipation
RθJC (Note 1)
TC = 25°C
PD
32.6
W
TA = 25°C
IDM
87
A
TA = 25°C
IDmaxPkg
35
A
TJ,
TSTG
--55 to
+175
°C
Pulsed Drain
Current
tp=10ms
Current Limited by Package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
27
IS
27
A
Drain to Source dV/dt
dV/dt
6
V/ns
Single Pulse Drain--to--Source Avalanche
Energy (VDD = 24 V, VGS = 10 V,
IL = 11 Apk, L = 1.0 mH, RG = 25 Ω)
EAS
60.5
mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1
3
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
2 3
1
2
3
CASE 369AC
CASE 369D
3 IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
4
Drain
4815NG
5.3
TC = 85°C
4
YWW
TA = 85°C
4
4
4815NG
Steady
State
S
N--CHANNEL MOSFET
YWW
Power Dissipation
RθJA (Note 2)
TA = 85°C
G
4815NG
Gate--to--Source Voltage
Symbol
YWW
Parameter
Drain--to--Source Voltage
2
1 2 3
1 Drain 3
Gate Source Gate Drain Source 1 2 3
Gate Drain Source
Y
WW
4815N
G
= Year
= Work Week
= Device Code
= Pb--Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
June, 2010 -- Rev. 5
1
Publication Order Number:
NTD4815N/D
NTD4815N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction--to--Case (Drain)
Parameter
RθJC
4.6
°C/W
Junction--to--TAB (Drain)
RθJC--TAB
3.5
Junction--to--Ambient – Steady State (Note 1)
RθJA
78
Junction--to--Ambient – Steady State (Note 2)
RθJA
119
1. Surface--mounted on FR4 board using 1 sq--in pad, 1 oz Cu.
2. Surface--mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Test Condition
Min
Drain--to--Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain--to--Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate--to--Source Leakage Current
IDSS
V
25
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25 °C
1
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.5
V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain--to--Source On Resistance
RDS(on)
Forward Transconductance
1.5
5.6
VGS = 10 V to
11.5 V
ID = 30 A
12
ID = 15 A
11.5
VGS = 4.5 V
ID = 30 A
21
ID = 15 A
18.3
gFS
VDS = 15 V, ID = 10 A
mV/°C
15
25
6.0
mΩ
S
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
108
Total Gate Charge
QG(TOT)
6.0
Threshold Gate Charge
QG(TH)
Gate--to--Source Charge
QGS
Gate--to--Drain Charge
QGD
Total Gate Charge
QG(TOT)
770
VGS = 0 V, f = 1.0 MHz, VDS = 12 V
VGS = 4.5 V, VDS = 15 V; ID = 30 A
181
0.9
2.5
pF
6.6
nC
3.1
VGS = 11.5 V, VDS = 15 V;
ID = 30 A
14.1
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn--On Delay Time
Rise Time
Turn--Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
10.5
VGS = 4.5 V, VDS = 15 V, ID = 15 A,
RG = 3.0 Ω
tf
21.4
11.4
3.5
3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
ns
NTD4815N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 4)
Turn--On Delay Time
Rise Time
Turn--Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
6.3
VGS = 11.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 Ω
tf
17.6
ns
18.4
2.3
DRAIN--SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
1.0
TJ = 125°C
0.92
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 30 A
1.2
V
15.3
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
8.7
ns
6.6
QRR
5.5
nC
Source Inductance
LS
2.49
nH
Drain Inductance, DPAK
LD
0.0164
Drain Inductance, IPAK
LD
Gate Inductance
LG
3.46
Gate Resistance
RG
2.6
PACKAGE PARASITIC VALUES
TA = 25°C
3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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3
1.88
Ω
NTD4815N
TYPICAL PERFORMANCE CURVES
80
5.5 V to 10 V
5V
50
TJ = 25°C
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
60
4.5 V
40
4V
30
3.8 V
3.6 V
20
3.4 V
3.2 V
10
3V
0
1
2
3
5
4
40
30
TJ = 125°C
20
TJ = 25°C
10
TJ = --55°C
0
1
2
3
4
6
5
7
8
9
Figure 1. On--Region Characteristics
Figure 2. Transfer Characteristics
0.020
0.015
0.010
0.005
3
4
5
7
6
8
9
10
12
11
RDS(on), DRAIN--TO--SOURCE RESISTANCE (Ω)
VGS, GATE--TO--SOURCE VOLTAGE (VOLTS)
ID = 30 A
TJ = 25°C
2
50
VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
0.025
0
60
0
0.030
10
0.030
TJ = 25°C
0.025
0.020
VGS = 4.5 V
0.015
0.010
VGS = 11.5 V
0.005
0
10
5
15
20
25
30
VGS, GATE--TO--SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On--Resistance vs. Gate--to--Source
Voltage
Figure 4. On--Resistance vs. Drain Current and
Gate Voltage
100,000
2.0
VGS = 0 V
ID = 30 A
VGS = 10 V
TJ = 175°C
10,000
IDSS, LEAKAGE (nA)
RDS(on), DRAIN--TO--SOURCE RESISTANCE
(NORMALIZED)
RDS(on), DRAIN--TO--SOURCE RESISTANCE (Ω)
0
VDS ≥ 10 V
70
1.5
1.0
0.5
--50 --25
1000
TJ = 125°C
100
10
0
25
50
75
100
125
150
175
4
8
12
16
20
24
28
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
Figure 5. On--Resistance Variation with
Temperature
Figure 6. Drain--to--Source Leakage Current
vs. Drain Voltage
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4
32
NTD4815N
C, CAPACITANCE (pF)
TJ = 25°C
Ciss
Coss
15
25
20
30
GATE--TO--SOURCE OR DRAIN--TO--SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
tr
td(off)
10
td(on)
tf
1
1
10
RG, GATE RESISTANCE (OHMS)
QT
Q1
4
6
2
4
1
0
ID = 30 A
TJ = 25°C
0
1
0.1
I D, DRAIN CURRENT (AMPS)
7
6
0
Figure 8. Gate--To--Source and Drain--To--Source
Voltage vs. Total Charge
VGS = 0 V
25
TJ = 25°C
20
15
10
5
0
0.4
1 ms
10 ms
dc
1
10
VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
100
EAS, SINGLE PULSE DRAIN--TO--SOURCE
AVALANCHE ENERGY (mJ)
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
2
3
4
5
QG, TOTAL GATE CHARGE (nC)
2
0.5
0.6
0.7
0.8
0.9
1.0
1.1
Figure 10. Diode Forward Voltage vs. Current
100 ms
1
10
VSD, SOURCE--TO--DRAIN VOLTAGE (VOLTS)
10 ms
VGS = 20 V
SINGLE PULSE
TC = 25°C
12
VGS
8
100
1000
10
Q2
3
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
100
14
VDS
5
30
VDD = 15 V
ID = 30 A
VGS = 11.5 V
100
16
IS, SOURCE CURRENT (AMPS)
t, TIME (ns)
1000
6
VDS, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
1500
VDS = 0 V
VGS = 0 V
1400
1300
1200
1100 Ciss
1000
900
800
700
600
500 Crss
400
300
200
100
Crss
0
5
5
10
0
10
VGS
VDS
VGS, GATE--TO--SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES
70
60
ID = 11 A
50
40
30
20
10
0
25
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
175
NTD4815N
TYPICAL PERFORMANCE CURVES
I D, DRAIN CURRENT (AMPS)
100
10
25°C
100°C
125°C
1
0.1
10
100
PULSE WIDTH (ms)
1
1000
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
Figure 13. Avalanche Characteristics
1.0
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
SINGLE PULSE
0.01
1.0E--05
1.0E--04
t1
t2
DUTY CYCLE, D = t1/t2
1.0E--03
1.0E--02
t, TIME (ms)
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) -- TC = P(pk) RθJC(t)
1.0E--01
1.0E+00
1.0E+01
Figure 14. Thermal Response
ORDERING INFORMATION
Package
Shipping†
NTD4815NT4G
DPAK
(Pb--Free)
2500 / Tape & Reel
NTD4815N--1G
IPAK
(Pb--Free)
75 Units / Rail
NTD4815N--35G
IPAK Trimmed Lead
(3.5  0.15 mm)
(Pb--Free)
75 Units / Rail
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
NTD4815N
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA--01
ISSUE B
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN
DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
c
b
0.005 (0.13)
M
C
H
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 90° CW
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
------ 0.040
0.155
------
6.17
0.243
SCALE 3:1
mm 
inches
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
-----1.01
3.93
------
NTD4815N
PACKAGE DIMENSIONS
3 IPAK, STRAIGHT LEAD
CASE 369AC--01
ISSUE O
B
V
NOTES:
1.. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2.. CONTROLLING DIMENSION: INCH.
3. SEATING PLANE IS ON TOP OF
DAMBAR POSITION.
4. DIMENSION A DOES NOT INCLUDE
DAMBAR POSITION OR MOLD GATE.
C
E
R
DIM
A
B
C
D
E
F
G
H
J
K
R
V
W
A
SEATING PLANE
K
W
F
J
G
D
H
3 PL
0.13 (0.005) W
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.043
0.090 BSC
0.034 0.040
0.018 0.023
0.134 0.142
0.180 0.215
0.035 0.050
0.000 0.010
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.09
2.29 BSC
0.87
1.01
0.46
0.58
3.40
3.60
4.57
5.46
0.89
1.27
0.000
0.25
IPAK (STRAIGHT LEAD DPAK)
CASE 369D--01
ISSUE B
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
--T-SEATING
PLANE
K
J
F
D
G
H
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
------
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
------
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
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NTD4815N/D
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