ON NTD5406NG Power mosfet 40 v, 70 a, single n−channel, dpak Datasheet

NTD5406N
Power MOSFET
40 V, 70 A, Single N−Channel, DPAK
Features
•
•
•
•
Low RDS(on)
High Current Capability
Low Gate Charge
These are Pb−Free Devices
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Applications
• Electronic Brake Systems
• Electronic Power Steering
• Bridge Circuits
V(BR)DSS
RDS(ON) TYP
ID MAX
(Note 1)
40 V
8.7 mΩ @ 10 V
70 A
N−Channel
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Units
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
ID
70
A
Continuous Drain
Current − RJC (Note 1)
Steady
State
TC = 125°C
Power Dissipation −
RJC (Note 1)
Steady
State
TC = 25°C
Pulsed Drain Current
TC = 25°C
PD
100
W
MARKING
DIAGRAM
4
tp = 10 s
Source Current (Body Diode) Pulsed
Single Pulse Drain−to Source Avalanche
Energy − (VDD = 50 V, VGS = 10 V, IPK = 30 A,
L = 1 mH, RG = 25 )
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IDM
150
A
TJ,
TSTG
−55 to
175
°C
1 2
IS
63.5
A
EAS
450
mJ
DPAK
CASE 369C
STYLE 2
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS (Note 1)
Junction−to−Case (Drain)
S
40
Operating Junction and Storage Temperature
Parameter
G
Symbol
Max
Units
RθJC
1.5
°C/W
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
1
3
Y
WW
5406N
G
YWW
54
06NG
= Year
= Work Week
= Specific Device Code
= Pb−Free Device
ORDERING INFORMATION
Device
Package
Shipping†
NTD5406NG
DPAK
(Pb−Free)
75 Units / Rail
NTD5406NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
May, 2009 − Rev. 2
1
Publication Order Number:
NTD5406N/D
NTD5406N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 A
40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
V
42
IDSS
VGS = 0 V,
VDS = 40 V
mV/°C
TJ = 25°C
1.0
TJ = 100°C
10
IGSS
VDS = 0 V, VGS = ±30 V
VGS(TH)
VGS = VDS, ID = 250 A
±100
A
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Gate Threshold Temperature
Coefficient
Drain−to−Source On Resistance
Forward Transconductance
VGS(TH)/TJ
1.5
3.5
−7.0
RDS(on)
gFS
V
mV/°C
VGS = 10 V, ID = 30 A
8.7
10
VGS = 5.0 V, ID = 10 A
13.2
17
VGS = 10 V, ID = 10 A
19
m
S
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
1375
2500
VGS = 0 V, f = 1.0 MHz,
VDS = 32 V
370
700
160
300
VGS = 10 V, VDS = 32 V,
ID = 30 A
Total Gate Charge
QG(TOT)
45
Threshold Gate Charge
QG(TH)
2.0
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
pF
nC
5.4
20
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
ns
7.2
VGS = 10 V, VDD = 32 V,
ID = 30 A, RG = 2.5 tf
57
30
67
SWITCHING CHARACTERISTICS, VGS = 5 V (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
ns
15
VGS = 5.0 V, VDD = 20 V,
ID = 30 A, RG = 2.5 tf
147
20
29
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
VSD
VGS = 0 V,
IS = 10 A
TJ = 25°C
0.82
TJ = 125°C
0.67
tRR
ta
tb
46
VGS = 0 V, dISD/dt = 100 A/s,
IS = 10 A
QRR
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2
V
ns
24
22
65
2. Pulse Test: pulse width ≤ 300 s, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
1.1
nC
NTD5406N
TYPICAL PERFORMANCE CURVES
VGS = 7 V to 10 V
80
TJ = 25°C
70
6V
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
80
5V
60
4.8 V
50
4.6 V
40
4.4 V
30
4.2 V
20
4V
10
3.8 V
3.6 V
0
0
2
1
3
5
4
6
8
7
9
VDS ≥ 10 V
70
60
50
40
30
TJ = 100°C
20
TJ = 25°C
10
TJ = −55°C
0
10
0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
4
3
5
1
2
6
7
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.03
Figure 2. Transfer Characteristics
ID = 30 A
TJ = 25°C
0.025
0.02
0.015
0.01
0.005
3
5
4
7
6
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
Figure 1. On−Region Characteristics
0.020
0.016
VGS = 5 V
0.014
0.012
0.010
VGS = 10 V
0.008
0.006
0.004
10
20
30
10000
ID = 10 A
VGS = 10 V
1.4
1.2
1
VGS = 0 V
1000
TJ = 175°C
100
10
TJ = 100°C
0.8
−25
0
25
50
75
100
125
150
60
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.6
0.6
−50
50
40
ID, DRAIN CURRENT (AMPS)
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.8
TJ = 25°C
0.018
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2
8
175
1
2
4
6
8
10
12
14
16
18
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
20
NTD5406N
TYPICAL PERFORMANCE CURVES
TJ = 25°C
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
3000
VDS = 0 V VGS = 0 V
Ciss
2400
Crss
1800
Ciss
1200
Coss
600
0
10
Crss
0
5
5
VGS VDS
10
15
20
25
30
35
40
12
36
QT
9
QGS
0
1000
9
ID = 30 A
TJ = 25°C
0
20
40
10
30
QG, TOTAL GATE CHARGE (nC)
IS, SOURCE CURRENT (AMPS)
t, TIME (ns)
td(off)
10
1
td(on)
1
10
RG, GATE RESISTANCE (OHMS)
VGS = 0 V
TJ = 25°C
25
20
15
10
5
0
0.4
100
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
0
50
Figure 8. Gate−To−Source and
Drain−To−Source Voltage vs. Total Charge
30
tf
tr
18
3
Figure 7. Capacitance Variation
100
VGS
QGD
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
VDS = 32 V
ID = 30 A
VGS = 10 V
27
VDS
6
0.5
0.7
0.6
0.8
0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
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4
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
3600
1
NTD5406N
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE B
SEATING
PLANE
−T−
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
3
U
K
F
J
L
H
D
G
2 PL
0.13 (0.005)
M
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.025 0.040
0.020
−−−
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.63
1.01
0.51
−−−
0.89
1.27
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.101
5.80
0.228
3.0
0.118
1.6
0.063
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTD5406N/D
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