ON NTD70N03R Power mosfet 72 a, 25 v, n-channel dpak Datasheet

NTD70N03R
Power MOSFET
72 A, 25 V, N-Channel DPAK
Features
•Planar HD3e Process for Fast Switching Performance
•Low RDS(on) to Minimize Conduction Loss
•Low CISS to Minimize Driver Loss
•Low Gate Charge
•Pb-Free Packages are Available
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V(BR)DSS
RDS(on) TYP
ID MAX
25 V
5.6 mW
72 A
N-Channel
D
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Value
Unit
Drain-to-Source Voltage
VDSS
25
Vdc
Gate-to-Source Voltage - Continuous
VGS
±20
Vdc
Thermal Resistance - Junction-to-Case
Total Power Dissipation @ TC = 25°C
Drain Current
- Continuous @ TC = 25°C, Chip
- Continuous @ TC = 25°C, Limited by Package
- Continuous @ TA = 25°C, Limited by Wires
- Single Pulse (tp = 10 ms)
RqJC
PD
2.4
62.5
°C/W
W
ID
ID
ID
IDM
72.0
62.8
32
140
A
A
A
A
Thermal Resistance - Junction-to-Ambient
(Note1)
Total Power Dissipation @ TA = 25°C
Drain Current - Continuous @ TA = 25°C
RqJA
80
°C/W
PD
ID
1.87
12.0
W
A
Thermal Resistance - Junction-to-Ambient
(Note2)
Total Power Dissipation @ TA = 25°C
Drain Current - Continuous @ TA = 25°C
RqJA
110
°C/W
PD
ID
1.36
10.0
W
A
Operating and Storage Temperature Range
TJ, Tstg
-55 to
175
°C
Single Pulse Drain-to-Source Avalanche
Energy - Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 10 Vdc, IL = 12 Apk,
L = 1 mH, RG = 25 W)
EAS
71.7
mJ
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 s
TL
260
°C
G
S
MARKING DIAGRAMS
4
1 2
3
DPAK
CASE 369AA
STYLE 2
4
1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 0.5 sq. in. pad size.
2. When surface mounted to an FR4 board using minimum recommended
pad size.
4
Drain
YWW
T70
N03G
Symbol
2
1
3
Drain
Gate
Source
4
Drain
YWW
T70
N03G
Parameter
2
3
DPAK
CASE 369D
STYLE 2
70N03
Y
WW
G
1 2 3
Gate Drain Source
= Device Code
= Year
= Work Week
= Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2008
March, 2008 - Rev. 10
1
Publication Order Number:
NTD70N03R/D
NTD70N03R
ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified)
Characteristics
Symbol
Min
Typ
Max
25
-
28
20.5
-
-
-
1.5
10
-
-
±100
1.0
-
1.5
4.0
2.0
-
-
8.1
5.6
13
8.0
-
27
-
CISS
-
1333
-
COSS
-
600
-
CRSS
-
218
-
td(on)
-
6.9
-
tr
-
1.3
-
td(off)
-
18.4
-
tf
-
5.5
-
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(br)DSS
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
Gate-Body Leakage Current
(VGS = ±20 Vdc, VDS = 0 Vdc)
IGSS
Vdc
mV/°C
mAdc
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain-to-Source On-Resistance (Note 3)
(VGS = 4.5 Vdc, ID = 20 Adc)
(VGS = 10 Vdc, ID = 20 Adc)
RDS(on)
Forward Transconductance (Note 3)
(VDS = 10 Vdc, ID = 15 Adc)
Vdc
mV/°C
mW
gFS
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 20 Vdc, VGS = 0 V,
f = 1 MHz)
Transfer Capacitance
pF
SWITCHING CHARACTERISTICS (Note 4)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
(VGS = 10 Vdc, VDD = 10 Vdc,
ID = 36 Adc, RG = 3 W)
Fall Time
Gate Charge
(VGS = 5 Vdc, ID = 36 Adc,
VDS = 10 Vdc) (Note 3)
QT
-
13.2
-
QGS
-
3.3
-
QDS
-
6.5
-
-
0.86
0.73
1.2
-
trr
-
27.9
-
ta
-
14.8
-
tb
-
13.1
-
QRR
-
19
-
ns
nC
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
(IS = 20 Adc, VGS = 0 Vdc) (Note 3)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
Reverse Recovery Time
(IS = 36 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 3)
Reverse Recovery Stored
Charge
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
Vdc
ns
nC
NTD70N03R
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
10 V
5V
8V
6V
4.5 V
125
4.2 V
4V
3.8 V
100
75
3.6 V
3.4 V
3.2 V
3V
2.8 V
2.6 V
50
25
2.4 V
0
0
2
4
6
100
75
50
TJ = 25°C
25
10
8
TJ = 175°C
TJ = -55°C
2
0
4
6
8
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
ID = 72 A
TJ = 25°C
0.04
0.03
0.02
0.01
0
2
4
6
8
10
0.016
VGS = 10 V
TJ = 175°C
0.012
0.008
TJ = 25°C
0.004
TJ = -55°C
0
10
30
50
70
90
110
130
150
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance versus
Gate-to-Source Voltage
Figure 4. On-Resistance versus Drain Current
and Gate Voltage
1,000,000
2.0
VGS = 0 V
ID = 36 A
VGS = 10 V
100,000
IDSS, LEAKAGE (nA)
1.8
125
0
0.05
RDS(on), DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
VDS ≥ 10 V
ID, DRAIN CURRENT (AMPS)
150
150
TJ = 25°C
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (AMPS)
175
1.6
1.4
1.2
1.0
TJ = 175°C
10,000
1000
TJ = 100°C
100
0.8
0.6
-50 -25
10
0
25
50
75
100
125
150
175
0
5
10
15
20
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with
Temperature
Figure 6. Drain-to-Source Leakage Current
versus Voltage
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3
25
3000
VDS = 0 V
TJ = 25°C
CISS
2500
C, CAPACITANCE (pF)
VGS = 0 V
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
NTD70N03R
CRSS
2000
CISS
1500
1000
COSS
500
CRSS
0
10
5
0
VGS
5
10
15
20
VDS
10
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
IS, SOURCE CURRENT (AMPS)
100
t, TIME (ns)
8
VDD = 10 V
6
QGS
4
QGD
2
ID = 36 A
TJ = 25°C
0
0
10
20
QG, TOTAL GATE CHARGE (nC)
30
Figure 8. Gate-To-Source and Drain-To-Source
Voltage versus Total Charge
80
1000
td(off)
10
td(on)
VDS = 10 V
ID = 36 A
VGS = 10 V
tf
tr
1
1
10
RG, GATE RESISTANCE (OHMS)
VGS = 0 V
TJ = 25°C
70
60
50
40
30
20
10
0
0.4
100
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
0.6
0.8
1.0
1.2
1.4
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
1.6
Figure 10. Diode Forward Voltage versus Current
100
120
10 ms
VGS = 20 V
SINGLE PULSE
TC = 25°C
10
80
100 ms
Ider (%)
I D, DRAIN CURRENT (AMPS)
QT
1 ms
40
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
dc
1
0.1
0
0
1
10
100
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
50
100
Tmb (°C)
150
200
Figure 12. Normalized Continuous Drain Current
as a function of Mounting Base Temperature
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4
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
NTD70N03R
1.0
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
SINGLE PULSE
0.01
1.0E-05
1.0E-04
t1
t2
DUTY CYCLE, D = t1/t2
1.0E-03
1.0E-02
t, TIME (ms)
RqJC(t) = r(t) RqJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
1.0E-01
1.0E+00
1.0E+01
Figure 13. Thermal Response
ORDERING INFORMATION
Package
Shipping†
DPAK-3
75 Units / Rail
NTD70N03RG
DPAK-3
(Pb-Free)
75 Units / Rail
NTD70N03RT4
DPAK-3
2500 / Tape & Reel
DPAK-3
(Pb-Free)
2500 / Tape & Reel
NTD70N03R-1
DPAK-3 Straight Lead
75 Units / Rail
NTD70N03R-1G
DPAK-3 Straight Lead
(Pb-Free)
75 Units / Rail
Order Number
NTD70N03R
NTD70N03RT4G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Spe‐
cifications Brochure, BRD8011/D.
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5
NTD70N03R
PACKAGE DIMENSIONS
DPAK
CASE 369AA-01
ISSUE A
-TC
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
H
J
L
R
S
U
V
Z
H
3
U
F
J
L
D
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
2 PL
0.13 (0.005)
M
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.025 0.035
0.018 0.024
0.030 0.045
0.386 0.410
0.018 0.023
0.090 BSC
0.180 0.215
0.024 0.040
0.020
--0.035 0.050
0.155
---
T
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.101
5.80
0.228
3.0
0.118
1.6
0.063
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.63
0.89
0.46
0.61
0.77
1.14
9.80 10.40
0.46
0.58
2.29 BSC
4.57
5.45
0.60
1.01
0.51
--0.89
1.27
3.93
---
NTD70N03R
PACKAGE DIMENSIONS
DPAK
CASE 369D-01
ISSUE B
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
-TSEATING
PLANE
K
J
F
H
D
G
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
---
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
---
3 PL
0.13 (0.005)
M
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
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NTD70N03R/D
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