NTE NTE183 Silicon complementary transistors general purpose amplifier, switch Datasheet

NTE182 (NPN) & NTE183 (PNP)
Silicon Complementary Transistors
General Purpose Amplifier, Switch
Description:
The NTE182 (NPN) and NTE183 (PNP) are silicon transistors in a TO127 type case designed for use
in general purpose amplifier and switching applications.
Features:
D DC Current Gain Specified to 10A
D High Current Gain–Bandwidth Product: fT = 2MHz (Min) @ IC = 500mA
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.72W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.39°C/W
Electrical Characteristics: (TC =+25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
VCEO(sus) IC = 200mA, IB = 0, Note 1
–
–
V
ICEO
VCE = 30V, IB = 0
–
–
700
µA
ICEX
VCE = 70V, VBE(off) = 1.5V
–
–
1.0
mA
VCE = 70V, VBE(off) = 1.5V,
TC = +150°C
–
–
5.0
mA
VCB = 70V, IE = 0
–
–
1.0
mA
VCB = 70V, IE = 0, TC = +150°C
–
–
10
mA
VBE = 5V, IC = 0
–
–
5.0
mA
ICBO
Emitter Cutoff Current
60
IEBO
Note 1. Pulse Test: Pulse Width ≤ 300µs. Duty Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TC =+25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain
hFE
IC = 4A, VCE = 4V
20
–
100
IC = 10A, VCE = 4V
5.0
–
–
Base–Emitter ON Voltage
VBE(on)
IC = 4A, VCE = 4V
–
–
1.8
V
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 4A, IB = 400mA
–
–
1.1
V
IC = 10A, IB = 3.3A
–
–
8.0
V
2.0
–
–
MHz
Dynamic Characteristics
Current Gain–Bandwidth Product
fT
IC = 500mA, VCE = 10V,
f = 1MHz
Note 1. Pulse Test: Pulse Width ≤ 300µs. Duty Cycle ≤ 2%.
.530 (13.4) Max
.143 (3.65) Dia Thru
.668
(17.0)
Max
E
B
.655
(16.6)
Max
.166 (4.23)
Heat Sink Contact
Area (Bottom)
C (Heat Sink Area)
.150 (3.82) Max
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