NTE NTE1862 Integrated circuit tv vertrical deflection circuit Datasheet

NTE347
Silicon NPN Transistor
RF Power Output
PO = 3W @ 175MHz
Description:
The NTE347 is designed for 13.6 volt, VHF large signal power amplifier applications required in military and industrial equipment operating to 240MHz.
Features:
D Low lead inductance stripline package for easier design and increased broadband capability.
D Balanced Emitter Construction for increased Safe Operating Area. The NTE347 is designed
to withstand an Open or Shorted Load at rated Output Power.
D Specified 13.6 volt, 175MHz Characteristics−
Output Power = 3.0 Watts
Minimum Gain = 8.2dB
Efficiency = 50%
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6A
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
V(BR)CEO
IC = 200mA, IB = 0
18
−
−
V
Collector−Emitter Breakdown Voltage
V(BR)CES
IC = 200mA, IB = 0
36
−
−
V
Emitter−Base Breakdown Voltage
V(BR)CBO
IE = 1.0mA, IC = 0
4.0
−
−
V
Collector Cutoff Current
V(BR)CBO
VCB = 15V, IE = 0
−
−
1.0
mA
5.0
−
−
−
−
15
30
pF
ON CHARACTERISTICS
DC Current Gain
hFE
IC = 100mA, VCE = 5.0Vdc
Cob
VCB = 15V, IE = 0, f = 0.1 to 1.0 MHz
DYNAMIC CHARACTERISTICS
Output Capacitance
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
FUNCTIONAL TEST
Power Input
Pin
Common−Emitter Amplifier Power Gain
GPE
−
POUT = 3W, VCE = 13.6V,
f = 175MHz
η
Collector Efficiency
−
−
dB
50
−
−
%
.220
(5.58)
E
.305
(7.75)
.030 (.762)
B
.090 (2.28)
.375 (9.52) Dia
.260 (6.60)
.005 (0.15)
.325 (8.28) Dia
.075
(1.94)
.115 (2.92)
8−32 NC−3A
Wrench Flat
W
8.2
1.065 (27.08) Max
.530
(13.46)
C
E
0.35 0.45
.730
(18.54)
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