NTE2588 Silicon NPN Transistor Horizontal Output for HDTV Features: D High Breakdown Voltage: V(BR)CEO = 1200V Min D Isolated TO220 Type Package Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.3°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit – 1 µA 1 µA Collector Cutoff Current ICBO VCB = 1200V, IE = 0 – Emitter Cutoff Current IEBO VEB = 4V, IC = 0 – DC Current Gain hFE VCE = 5V, IC = 1.5A 10 – 60 fT VCE = 10V, IC = 1.5A – 6 – MHz Collector–Emitter Saturation Voltage VCE(sat) IC = 3mA, IB = 0.6mA – – 5 V Base–Emitter Saturation Voltage VBE(sat) IC = 3mA, IB = 0.6mA – – 2 V V(BR)CBO IC = 100µA, IE = 0 1500 – – V Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞ 1200 – – V 5 – – V – 2.0 – pF Gain Bandwidth Product Collector–Base Breakdown Voltage Emitter–Base Breakdown Voltage Output Capacitance V(BR)EBO IE = 100µA, IC = 0 Cob VCB = 100V, f = 1MHz .402 (10.2) Max .173 (4.4) Max .224 (5.7) Max .114 (2.9) Max .122 (3.1) Dia .295 (7.5) .165 (4.2) .669 (17.0) Max B C E .531 (13.5) Min .100 (2.54) .059 (1.5) Max NOTE: Tab is isolated