NTE NTE269 Silicon complementary transistors darlington power amplifier Datasheet

NTE268 (NPN) & NTE269 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202
type package designed for amplifier and driver applications where high gain is an essential requirement, low power lamp and relay drivers and power drivers for high–current applications such as voltage regulators.
Features:
D Low Collector–Emitter Saturation Voltage: VCE(sat) = 1.5V Max @ IC = 1.5A
D TO202 Type Package: 2W Free Air Dissipation @ TA = +25°C
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13V
Colllector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67W
Derate Above 25°C (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.3mW/°C
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75°C/W
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5°C/W
Note 1. The NTE268 is a discontinued device and no longer available.
Note 2. Pulse Width ≤ 25ms, Duty Cycle ≤ 50%.
Note 3. The actual power dissipation capability of the TO202 type package is 2W @ TA = +25°C.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
50
–
–
V
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V(BR)CEO IC = 10mA, Note 4
ICBO
VCB = 50V, IE = 0, TJ = +150°C
–
–
20
µA
ICES
VCE = 50V, VBE = 0
–
–
0.5
µA
IEBO
VEB = 13V, IC = 0
–
–
100
nA
hFE
IC = 200mA, VCE = 5V
10000
–
–
IC = 1.5A, VCE = 5V
1000
–
–
ON Characteristics (Note 4)
DC Current Gain
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 1.5A, IB = 3mA
–
–
1.5
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 1.5A, IB = 3mA
–
–
2.5
V
VCB = 10V, IE = 0, f = 1MHz
–
–
10
pF
–
–
25
pF
1.0
–
–
Dynamic Characteristics
Collector Capacitance
NTE268
Ccb
NTE269
High Frequency Current Gain
|hfe|
IC = 20mA, VCE = 5V, f = 100MHz
Note 4. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
NTE268
C
.380 (9.56)
B
.180 (4.57)
.132 (3.35) Dia
C
E
.500
(12.7)
.325
(9.52)
1.200
(30.48)
Ref
.070 (1.78) x 45°
Chamf
.300
(7.62)
.050 (1.27)
NTE269
C
.400
(10.16)
Min
B
E
E
.100 (2.54)
B
C
.100 (2.54)
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