NTE NTE2969 Mosfet n-channel, enhancement mode high speed switch Datasheet

NTE2969
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
D Avalanche Rugged Technology
D Rugged Gate Oxide Technology
D Low Input Capacitance
D Improved Gate Charge
D Extended Safe Operating Area
D Lower Leakage Current
D Low Static Drain–Source On–State Resistance
Absolute Maximum Ratings:
Drain–Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Drain Current, ID
Continuous
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15.1A
Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Gate Current (Pulsed), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±1.5A
Single Pulsed Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1429mJ
Avalanche Current (Note 1), IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27.8mJ
Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0V/ns
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 278W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.22W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +300°C
Thermal Resistance:
Maximum Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.45°C/W
Typical Case–to–Sink, RthCS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.24°C/W
Maximum Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40°C/W
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. L = 4mH, IAS = 25A, VDD = 50V, RG = 27Ω, Starting TJ = +25°C.
Note 3. ISD ≤ 25A, di/dt ≤ 320A/µs, VDD ≤ BVDSS, Starting TJ = +25°C.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Drain–Source Breakdown Voltage
Symbol
BVDSS
Test Conditions
VGS = 0V, ID = 250µA
Breakdown Voltage Temperature DBV/DTJ ID = 250µA
Coefficient
Gate Threshold Voltage
VGS(th)
VDS = 5V, ID = 250µA
Min
Typ
Max
Unit
400
–
–
V
–
0.20
–
V/°C
2.0
–
4.0
V
Gate–Source Leakage Forward
IGSS
VGS = 30V
–
–
100
nA
Gate–Source Leakage Reverse
IGSS
VGS = –30V
–
–
–100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 400V, VGS = 0
–
–
10
µA
VDS = 320V, TC = +150°C
–
–
100
µA
RDS(on)
VGS = 10V, ID = 12.5A, Note 4
–
–
0.2
Ω
Forward Transconductance
gfs
VDS = 50V, ID = 12.5A, Note 4
–
18.91
–
mhos
Input Capacitance
Ciss
VGS = 0V, VDS = 25V, f = 1MHz
–
3180
4130
pF
Output Capacitance
Coss
–
435
500
pF
Reverse Transfer Capacitance
Crss
–
200
240
pF
Turn–On Delay Time
td(on)
–
22
55
ns
–
22
60
ns
td(off)
–
127
260
ns
tf
–
38
85
ns
–
140
182
nC
–
21
–
nC
–
64.8
–
nC
(Body Diode)
–
–
25
A
Static Drain–Source ON Resistance
Rise Time
Turn–Off Delay Time
Fall Time
tr
Total Gate Charge
Qg
Gate–Source Charge
Qgs
Gate–Drain (“Miller”) Charge
Qgd
VDD = 200V, ID = 25A, RG = 5.3Ω,
Note 4, Note 5
VGS = 10V, ID = 25A, VDS = 320V,
Note 4, Note 5
Source–Drain Diode Ratings and Characteristics
Continuous Source Current
IS
Pulse Source Current
ISM
(Body Diode) Note 1
–
–
100
A
Diode Forward Voltage
VSD
TJ = +25°C, IS = 25A, VGS = 0V, Note 4
–
–
1.5
V
Reverse Recovery Time
trr
TJ = +25°C, IF = 25A, dIF/dt = 100A/µs
–
484
–
ns
Reverse Recovery Charge
Qrr
–
7.6
–
µC
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width ≤ 250µs, Duty Cycle ≤ 2%.
Note 5. Essentially independent of operating temperature.
.190 (4.82)
.615 (15.62)
.787
(20.0)
.591
(15.02)
.126 (3.22) Dia
.787
(20.0)
G
D
S
.215 (5.47)
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