NTE NTE5811 Silicon power rectifier diode, 12 amp, do4 Datasheet

NTE5810 & NTE5811,
NTE5870 thru NTE5891
Silicon Power Rectifier Diode, 12 Amp, DO4
Description:
The NTE5810, NTE5811, and NTE5870 through NTE5891 are low power general purpose rectifier
diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls.
Features:
D High Surge Current Capability
D High Voltage Available
D Designed for a Wide Range of Applications
D Available in Anode−to−Case or Cathode−to−Case Style
Ratings and Characteristics:
Average Forward Current (TC = +144°C Max), IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Maximum Forward Surge Current, IFSM
50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230A
60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240A
Fusing Current, I2t
50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260A2s
60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240A2s
Fusing Current, I2pt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3580A2ps
Maximum Reverse Recovery Voltage Range, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 to 1200V
Voltage Ratings: (TJ = +175°C, Note 1)
Cathode
to Case
Anode
to Case
VRRM−Max
Repetitive Peak
Reverse Volt.
(V)
5870
5871
50
75
50
−
12
5872
5873
100
150
100
−
12
5874
5875
200
275
200
−
12
5876
5877
300
385
300
−
12
5878
5879
400
500
400
500
12
5880
5881
500
613
500
626
12
5882
5883
600
725
600
750
12
5886
5887
800
950
800
950
12
5890
5891
1000
1200
1000
1150
12
5810
5811
1200
1400
1200
1350
12
NTE Type Number
VRSM−Max
Non−Repetitive Peak
Reverse Voltage
(V)
VR−Max.
Direct Reverse
Voltage
(V)
VR(SR)
Minimum Avalanche
Voltage
(V)
IRM−Max
Reverse Current
Rated VRRM
(mA)
Electrical Specifications:
Parameter
Symbol
Maximum Average Forward Current
IF (AV)
Maximum RMS Forward Current
IF(RMS)
Maximum Peak One−Cycle
Non−Repetitive Surge Current
Test Conditions
Unit
12
A
19
A
Sinusoidal Half Wave,
No voltage reapplied
225
A
235
A
100% rated voltage reapplied,
TJ = +175°C
265
A
280
A
100% rated voltage reapplied,
Initial TJ = +175°C
351
A2s
320
A2s
180° sinusoidal condition, TC = +144°C Max
t = 10ms
IFSM
t = 8.3ms
t = 10ms
t = 8.3ms
Maximum I2t for Individual Device
Fusing
Rating
I2t
t = 10ms
t = 8.3ms
Maximum I2pt
I2pt
t = 0.1 to 10ms, No voltage reapplied, Note 1
3511
A2pt
Maximum Peak Forward Voltage
VFM
IFM = 38A, TJ = +25°C
1.26
V
VM (TO)
TJ = +175°C
0.68
V
rt
TJ = +175°C
13.51
mΩ
Maximum Value of Threshold
Voltage
Maximum Value of Forward Slope
Resistance
Note 1. I2t for time tx = I2Ǩt S Ǩtx
Thermal−Mechanical Specifications:
Parameter
Symbol
Maximum Operation Junction Temperature
Maximum Storage Temperature
Test Conditions
Rating
Unit
TJ
−65 to + 175
°C
Tstg
−65 to + 200
°C
Maximum Internal Thermal Resistance
Junction−to−Case
RthJC
DC operation
2.0
K/W
Thermal Resistance, Case−to−Sink
RthCS
Mounting surface flat, smooth and
greased
0.5
K/W
Mounting Torque
T
Approximate Weight
wt
.437
(11.1)
Max
.424 (10.8)
Dia Max
Non−lubricated threads
1.2 − 1.5
m•N
(10.5 − 13.5) (in•lb)
11 (0.25)
.250 (6.35) Max
.175 (4.45) Max
.060 (1.52)
Dia Min
10−32 NF−2A
.405
(10.3)
Max
1.250 (31.75) Max
.453
(11.5)
Max
g (oz)
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