NTE NTE5895 Silicon power rectifier diode, 16 amp Datasheet

NTE5892 thru NTE5899
NTE5900 thru NTE5911
Silicon Power Rectifier Diode, 16 Amp
Description and Features:
The NTE5892 through NTE5911 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls.
Features:
D High Surge Current Capability
D High Voltage Available
D Designed for a Wide Range of Applications
D Available in Anode–to–Case or Cathode–to–Case Style
Ratings and Characteristics:
Average Forward Current (TC = +140°C Max), IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Maximum Forward Surge Current, IFSM
50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 295A
60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 310A
Fusing Current, I2t
50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 435A2s
60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 395A2s
Fusing Current, I2pt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6150A2ps
Maximum Reverse Recovery Voltage Range, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 to 1000V
Voltage Ratings: (TJ = +175°C)
Cathode
to Case
Anode
to Case
VRRM–Max
Repetitive Peak
Reverse Volt.
(V)
5892
5893
50
75
50
–
12
5894
5895
100
150
100
–
12
5896
5897
200
275
200
–
12
5898
5899
300
385
300
–
12
5900
5901
400
500
400
500
12
5902
5903
500
613
50
626
12
5904
5905
600
725
600
750
12
5908
5909
800
950
800
950
12
5910
5911
1000
1200
1000
1150
12
NTE Type Number
VRSM–Max
Non–Repetitive Peak
Reverse Voltage
(V)
VR–Max.
Direct Reverse
Voltage
(V)
VR(SR)
Minimum Avalanche
Voltage
(V)
IRM–Max
Reverse Current
Rated VRRM
(mA)
Electrical Specifications:
Parameter
Symbol
Maximum Average Forward Current
IF (AV)
Maximum RMS Forward Current
IF(RMS)
Maximum Peak One–Cycle
Non–Repetitive Surge Current
Test Conditions
Unit
16
A
25
A
Sinusoidal Half Wave,
No voltage reapplied
295
A
310
A
100% rated voltage reapplied,
TJ = +175°C
°
350
A
370
A
100% rated voltage reapplied,
Initial TJ = +175°C
°
612
A2s
560
A2s
180° sinusoidal condition, TC = +140°C Max
t = 10ms
IFSM
t = 8.3ms
t = 10ms
t = 8.3ms
Maximum I2t for Individual Device
Fusing
Rating
I2t
t = 10ms
t = 8.3ms
Maximum I2pt
I2pt
t = 0.1 to 10ms, No voltage reapplied, Note 1
6125
A2pt
Maximum Peak Forward Voltage
VFM
IFM = 50A, TJ = +25°C
1.23
V
VM (TO)
TJ = +175°C
0.78
V
rt
TJ = +175°C
7.55
mΩ
Maximum Value of Threshold
Voltage
Maximum Value of Forward Slope
Resistance
Note 1. I2t for time tx = I2Ǩt S Ǩtx
Thermal–Mechanical Specifications:
Parameter
Symbol
Maximum Operation Junction Temperature
Maximum Storage Temperature
Test Conditions
Rating
Unit
TJ
–65 to + 175
°C
Tstg
–65 to + 200
°C
Maximum Internal Thermal Resistance
Junction–to–Case
RthJC
DC operation
1.6
K/W
Thermal Resistance, Case–to–Sink
RthCS
Mounting surface flat, smooth and
greased
0.5
K/W
Mounting Torque
T
Approximate Weight
wt
.437
(11.1)
Max
Non–lubricated threads
1.2 – 1.5
m•N
(10.5 – 13.5) (in•lb)
11 (0.25)
.250 (6.35) Max
.175 (4.45) Max
.060 (1.52)
Dia Min
10–32 NF–2A
.424 (10.8)
Dia Max
.405
(10.3)
Max
1.250 (31.75) Max
.453
(11.5)
Max
g (oz)
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