NTE NTE5919 Silicon power rectifier diode, 20 amp Datasheet

NTE5844 & NTE5845,
NTE5912 thru NTE5933
Silicon Power Rectifier Diode, 20 Amp
Description and Features:
The NTE5844, NTE5845, and NTE5912 through NTE5933 are low power general purpose rectifier
diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls.
Features:
D
D
D
D
High Surge Current Capability
High Voltage Available
Designed for a Wide Range of Applications
Available in Anode–to–Case or Cathode–to–Case Style
Ratings and Characteristics:
Average Forward Current (TC = +140°C Max), IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Maximum Forward Surge Current (60Hz), IFSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400A
Fusing Current (60Hz), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 493A2s
Fusing Current, I2pt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7640A2ps
Maximum Reverse Recovery Voltage Range, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 to 1200V
Voltage Ratings: (TJ = +175°C)
Cathode
to Case
Anode
to Case
VRRM–Max
Repetitive Peak
Reverse Volt.
(V)
5912
5913
50
75
50
–
12
5914
5915
100
150
100
–
12
5916
5917
200
275
200
–
12
5918
5919
300
385
300
–
12
5920
5921
400
500
400
500
12
5922
5923
500
613
50
613
12
5924
5925
600
725
600
725
12
5928
5929
800
950
800
950
12
5932
5933
1000
1200
1000
1200
12
5844
5845
1200
1400
1200
1350
12
NTE Type Number
VRSM–Max
Non–Repetitive Peak
Reverse Voltage
(V)
VR–Max.
Direct Reverse
Voltage
(V)
VR(SR)
Minimum Avalanche
Voltage
(V)
IRM–Max
Reverse Current
Rated VRRM
(mA)
Electrical Specifications:
Parameter
Symbol
Maximum Average Forward Current
IF (AV)
Maximum Peak One–Cycle
Non–Repetitive Surge Current
IFSM
Test Conditions
Rating
Unit
180° sinusoidal condition, TC = +150°C Max
20
A
t = 10ms
Sinusoidal Half Wave,
No voltage reapplied
400
A
425
A
100% rated voltage reapplied,
TJ = +175°C
°
437
A
462
A
540
A2s
t = 8.3ms
No voltage reapplied,
Initial TJ = +175°C
°
493
A2s
t = 10ms
100% rated voltage reapplied
765
A2s
t = 8.3ms
700
A2s
t = 8.3ms
t = 10ms
t = 8.3ms
Maximum I2t for Fusing
I2t
t = 10ms
Maximum I2t for Individual Device
Fusing
Maximum I2pt
I2pt
t = 0.1 to 10ms, No voltage reapplied, Note 1
7640
A2pt
Maximum Peak Forward Voltage
VFM
IFM = 63A, TJ = +25°C
1.23
V
VM (TO)
TJ = +175°C
0.78
V
rt
TJ = +175°C
7.55
mΩ
Maximum Value of Threshold
Voltage
Maximum Value of Forward Slope
Resistance
Note 1. I2t for time tx = I2Ǩt S Ǩtx
Thermal–Mechanical Specifications:
Parameter
Symbol
Maximum Operation Junction Temperature
Maximum Storage Temperature
Test Conditions
Rating
Unit
TJ
–65 to + 175
°C
Tstg
–65 to + 200
°C
Maximum Internal Thermal Resistance
Junction–to–Case
RthJC
DC operation
1.6
K/W
Thermal Resistance, Case–to–Sink
RthCS
Mounting surface flat, smooth and
greased
0.25
K/W
Mounting Torque
T
Approximate Weight
wt
.437
(11.1)
Max
Non–lubricated threads
1.2 – 1.5
m•N
(10.5 – 13.5) (in•lb)
11 (0.25)
.250 (6.35) Max
.175 (4.45) Max
.060 (1.52)
Dia Min
10–32 NF–2A
.424 (10.8)
Dia Max
.405
(10.3)
Max
1.250 (31.75) Max
.453
(11.5)
Max
g (oz)
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