ON NTJS3151PT1 Trench power mosfet 12 v, 3.3 a, single p−channel, esd protected sc−88 Datasheet

NTJS3151P
Trench Power MOSFET
12 V, 3.3 A, Single P−Channel,
ESD Protected SC−88
Features
•
•
•
•
Leading Trench Technology for Low RDS(ON) Extending Battery Life
SC−88 Small Outline (2x2 mm, SC70−6 Equivalent)
Gate Diodes for ESD Protection
Pb−Free Packages are Available
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V(BR)DSS
RDS(on) Typ
−12 V
133 mW @ −1.8 V
• High Side Load Switch
• Cell Phones, Computing, Digital Cameras, MP3s and PDAs
SC−88 (SOT−363)
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Symbol
Value
Units
Drain−to−Source Voltage
VDSS
−12
V
Gate−to−Source Voltage
VGS
±12
V
ID
−2.7
A
Continuous Drain
Current (Note 1)
Steady
State
TA = 25 °C
TA = 85 °C
−2.0
t≤5s
TA = 25 °C
−3.3
Steady
State
TA = 25 °C
PD
0.625
W
tp = 10 ms
IDM
−8.0
A
TJ,
TSTG
−55 to
150
°C
Source Current (Body Diode)
IS
−0.8
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
Power Dissipation
(Note 1)
Pulsed Drain Current
Operating Junction and Storage Temperature
D
1
6
D
D
2
5
D
G
3
4
S
Top View
Symbol
Max
Units
Junction−to−Ambient – Steady State
RqJA
200
°C/W
Junction−to−Ambient − t ≤ 5 s
RqJA
141
Junction−to−Lead – Steady State
RqJL
102
3 kW
S
MARKING DIAGRAM &
PIN ASSIGNMENT
D
1
D
TJ
M
G
S
TJ M G
G
SC−88/SOT−363
CASE 419B
STYLE 28
D
6
1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
D
G
THERMAL RESISTANCE RATINGS (Note 1)
Parameter
−3.3 A
67 mW @ −2.5 V
Applications
Parameter
ID Max
45 mW @ −4.5 V
D
G
= Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 2
1
Publication Order Number:
NTJS3151/D
NTJS3151P
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 mA
−12
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
IGSS
V
10
−1.0
mA
VDS = 0 V, VGS = ±4.5 V
±1.5
mA
VDS = 0 V, VGS = ±12 V
±10
mA
VGS = −9.6 V,
VDS = 0 V
TJ = 25°C
mV/°C
TJ = 125°C
−2.5
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(TH)
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
VGS = VDS, ID = 100 mA
−0.40
V
3.4
mV/°C
VGS = −4.5 V, ID = −3.3 A
45
60
VGS = −2.5 V, ID = −2.9 A
67
90
VGS = −1.8 V, ID = −1.0 A
133
160
VGS = −10 V, ID = −3.3 A
15
S
850
pF
mW
CHARGES AND CAPACITANCES
CISS
Input Capacitance
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
VGS = 0 V, f = 1.0 MHz,
VDS = −12 V
QG(TOT)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Gate Resistance
170
110
nC
8.6
VGS = −4.5 V, VDS = −5.0 V,
ID = −3.3 A
1.3
2.2
RG
3000
W
td(ON)
0.86
ms
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = −4.5 V, VDD = −6.0 V,
ID = −1.0 A, RG = 6.0 W
tf
1.5
3.5
3.9
DRAIN−SOURCE DIODE CHARACTERISTICS (Note 2)
Forward Diode Voltage
VSD
VGS = 0 V,
IS = −3.3 A
TJ = 25°C
−0.85
TJ = 125°C
−0.7
2. Pulse Test: pulse width ≤ 300ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
−1.2
V
NTJS3151P
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
8
TJ = 25°C
VGS = −4.5 V
−ID, DRAIN CURRENT (AMPS)
−ID, DRAIN CURRENT (AMPS)
8
VGS = −3.4 V
6
−2 V
−2.4 V
4
2
−1.6 V
0
−1.4 V
−1.2 V
1
0
2
4
3
VDS ≤ −12 V
6
4
125°C
2
25°C
TJ = −55°C
0
5
0
0.5
1
1.5
2
2.5
3
3.5
4 4.5
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.1
VGS = −4.5 V
0.075
TJ = 125°C
0.05
TJ = 25°C
TJ = −55°C
0.025
0
0.5
1.5
2.5
3.5
4.5
5.5
6.5
7.5
−ID, DRAIN CURRENT (AMPS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
0.5
0.4
0.3
0.2
0
0.5
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
−50
−25
0
25
50
75
100
125
1.5
2.5
3.5
4.5
5.5
6.5
7.5
−ID, DRAIN CURRENT (AMPS)
100000
ID = −3.3 A
VGS = −4.5 V
VGS = −4.5 V
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
−IDSS, LEAKAGE CURRENT (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.8
VGS = −2.5 V
0.1
Figure 3. On−Resistance vs. Drain Current and
Temperature
2.0
TJ = 25°C
VGS = −1.8 V
150
VGS = 0 V
10000
TJ = 150°C
1000
TJ = 125°C
100
0
TJ, JUNCTION TEMPERATURE (°C)
2
8
4
6
10
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
12
NTJS3151P
1600
TJ = 25°C
VGS = 0 V
C, CAPACITANCE (pF)
1400
1200
1000
Ciss
800
600
400
Coss
200
0
Crss
0
2
4
6
8
12
10
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
4.5
QT
4
3.5
3
2.5
Q1
2
1.5
1
ID = −3.3 A
TJ = 25°C
0.5
0
0
Figure 7. Capacitance Variation
2
8
4
6
Qg, TOTAL GATE CHARGE (nC)
10
Figure 8. Gate−to−Source Voltage vs. Total
Gate Charge
10000
−IS, SOURCE CURRENT (AMPS)
4
tf
td(off)
t, TIME (ns)
Q2
tr
1000
td(on)
VDD = −6.0 V
ID = −1.0 A
VGS = −4.5 V
100
1
10
VGS = 0 V
TJ = 25°C
3
2
1
0
100
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8 0.9
RG, GATE RESISTANCE (OHMS)
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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4
NTJS3151P
ORDERING INFORMATION
Device
NTJS3151PT1
NTJS3151PT1G
NTJS3151PT2
NTJS3151PT2G
Package
Shipping†
SC−88
3000 Tape & Reel
SC−88
(Pb−Free)
3000 Tape & Reel
SC−88
3000 Tape & Reel
SC−88
(Pb−Free)
3000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTJS3151P
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE W
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
D
e
MILLIMETERS
DIM MIN
NOM MAX
A
0.80
0.95
1.10
A1 0.00
0.05
0.10
A3
0.20 REF
b
0.10
0.21
0.30
C
0.10
0.14
0.25
D
1.80
2.00
2.20
E
1.15
1.25
1.35
e
0.65 BSC
L
0.10
0.20
0.30
HE
2.00
2.10
2.20
STYLE 28:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
A3
6
5
4
HE
C
−E−
1
2
3
L
b 6 PL
0.2 (0.008)
M
E
M
A
INCHES
NOM MAX
0.037 0.043
0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
MIN
0.031
0.000
SOLDERING FOOTPRINT*
A1
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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NTJS3151P/D
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