ON NTMS4916N Power mosfet 30 v, 11.6 a, nâ channel, soâ 8 low rds(on) to minimize conduction loss Datasheet

NTMS4916N
Power MOSFET
30 V, 11.6 A, N−Channel, SO−8
Features
•
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Optimized for 5 V, 12 V Gate Drives
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
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V(BR)DSS
RDS(ON) MAX
9 mW @ 10 V
30 V
• DC−DC Converters
• Printers
Drain−to−Source Voltage
Gate−to−Source Voltage
N−Channel
Symbol
Value
Unit
VDSS
30
V
VGS
±20
V
ID
9.4
A
Continuous Drain
Current RqJA (Note 1)
Steady
State
TA = 25°C
Power Dissipation RqJA
(Note 1)
Steady
State
TA = 25°C
PD
1.30
W
Continuous Drain
Current RqJA (Note 2)
Steady
State
TA = 25°C
ID
7.8
A
TA = 70°C
TA = 25°C
Power Dissipation RqJA
(Note 2)
G
S
PD
W
TA = 25°C
Power Dissipation
RqJA, t v 10 s(Note 1)
Steady
State
TA = 25°C
PD
1.98
W
Pulsed Drain Current
TA = 25°C, tp = 10 ms
IDM
145
A
TJ,
Tstg
−55 to
150
°C
TA = 70°C
11.6
A
9.3
Source Current (Body Diode)
IS
2.5
A
EAS
40.5
mJ
TL
260
°C
SO−8
CASE 751
STYLE 12
Source
Source
Source
Gate
1
8
Drain
Drain
Drain
Drain
Top View
4916N = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
1
4916N
AYWWG
G
ID
0.89
Steady
State
Single Pulse Drain−to−Source Avalanche Energy
(TJ = 25°C, VDD = 30 V, VGS = 10 V,
IL = 9 Apk, L = 1.0 mH, RG = 25 W)
MARKING DIAGRAM/
PIN ASSIGNMENT
6.2
Continuous Drain
Current RqJA, t v 10 s
(Note 1)
Operating Junction and Storage Temperature
D
7.5
TA = 70°C
11.6 A
12 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
ID MAX
Symbol
Value
Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
96
°C/W
Junction−to−Ambient – t v 10 s (Note 1)
RqJA
63
Junction−to−Foot (Drain)
RqJF
24.5
Junction−to−Ambient – Steady State (Note 2)
RqJA
141
Device
NTMS4916NR2G
Package
Shipping†
SO−8
(Pb−Free)
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1. Surfacemounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2010
April, 2010 − Rev. 0
1
Publication Order Number:
NTMS4916N/D
NTMS4916N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
16
VGS = 0 V, VDS = 30 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
±100
mA
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
1.0
1.7
2.5
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V, ID = 12 A
6.75
9.0
VGS = 4.5 V, ID = 10 A
9.0
12
gFS
VDS = 1.5 V, ID = 7.5 A
23
S
1376
pF
Forward Transconductance
5
V
Negative Threshold Temperature
Coefficient
mV/°C
mW
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VGS = 0 V, f = 1.0 MHz, VDS = 25 V
401
205
Total Gate Charge
QG(TOT)
15
Threshold Gate Charge
QG(TH)
2.44
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 15 V, ID = 7.5 A
nC
4
6.5
VGS = 10 V, VDS = 15 V, ID = 7.5 A
28
nC
td(on)
9.4
ns
tr
7.4
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(off)
VGS = 10 V, VDS = 15 V,
ID = 1.0 A, RG = 6.0 W
tf
32
15.6
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
VGS = 0 V, IS = 2.0 A
TJ = 25°C
0.740
TJ = 125°C
0.570
tRR
30.7
Charge Time
ta
14.3
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 2.0 A
1.0
V
ns
16.4
QRR
20
nC
LS
0.66
nH
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance
LD
Gate Inductance
LG
Gate Resistance
RG
TA = 25°C
0.2
1.5
0.77
3. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
W
NTMS4916N
TYPICAL PERFORMANCE CURVES
10V
7V
20
50
TJ = 25°C
5V
VDS ≥ 10 V
2.8 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
25
4V
3.0 V
15
2.6 V
10
2.5 V
2.2 V
5
2.4 V
40
30
TJ = 125°C
20
TJ = 25°C
10
2.3 V
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0.015
0.010
0.005
3
3.5
4
4
5
6
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
4.5
0.01
TJ = 25°C
VGS = 4.5 V
0.009
0.008
VGS = 10 V
0.007
0.006
0.005
2
4
6
8
10
12
14
16
18
20
22
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.70
10000
VGS = 0 V
ID = 12 A
VGS = 10 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
2.5
Figure 2. Transfer Characteristics
0.020
1.50
2
Figure 1. On−Region Characteristics
TJ = 25°C
ID = 12 A
1.60
1.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.025
3
1
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.030
0.000
0
5
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
TJ = −55°C
1.40
1.30
1.20
1.10
1.00
0.90
1000
TJ = 150°C
100
TJ = 100°C
0.80
0.70
−50
−25
0
25
50
75
100
125
150
10
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
30
NTMS4916N
TJ = 25°C
VGS = 0 V
Ciss
Coss
Crss
0
5
10
15
20
25
DRAIN−TO−SOURCE VOLTAGE (V)
10
QT
8
VDS
6
4
QGS
QGD
Q2
Q1
ID = 7.5 A
VGS = 10 V
TJ = 25°C
2
0
30
0
5
IS, SOURCE CURRENT (A)
t, TIME (ns)
25
30
2
VDD = 15 V
ID = 1 A
VGS = 10 V
td(off)
100
tf
tr
td(on)
10
1
10
RG, GATE RESISTANCE (W)
100
VGS = 0 V
TJ = 25°C
1.5
1
0.5
0
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
0.5
0.55
0.6
0.65
0.7
0.75
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
0.8
Figure 10. Diode Forward Voltage vs. Current
45
SINGLE PULSE
TC = 25°C
10 ms
100 ms
10
1 ms
10 ms
1
0.1
0.01
0.01
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
dc
0.1
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
1000
ID, DRAIN CURRENT (A)
20
Figure 8. Gate−To−Source and
Drain−To−Source Voltage vs. Total Charge
1000
100
15
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
2000
1900
1800
1700
1600
1500
1400
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
TYPICAL PERFORMANCE CURVES
100
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
40
ID = 9 A
35
30
25
20
15
10
5
0
25
50
75
100
125
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
150
NTMS4916N
PACKAGE DIMENSIONS
SOIC−8 NB
CASE 751−07
ISSUE AK
−X−
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
A
8
5
S
B
0.25 (0.010)
M
Y
M
1
4
−Y−
K
G
C
N
DIM
A
B
C
D
G
H
J
K
M
N
S
X 45 _
SEATING
PLANE
−Z−
0.10 (0.004)
H
D
0.25 (0.010)
M
Z Y
S
X
M
J
S
SOLDERING FOOTPRINT*
1.52
0.060
7.0
0.275
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.33
0.51
1.27 BSC
0.10
0.25
0.19
0.25
0.40
1.27
0_
8_
0.25
0.50
5.80
6.20
INCHES
MIN
MAX
0.189
0.197
0.150
0.157
0.053
0.069
0.013
0.020
0.050 BSC
0.004
0.010
0.007
0.010
0.016
0.050
0 _
8 _
0.010
0.020
0.228
0.244
STYLE 12:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
7. DRAIN
8. DRAIN
4.0
0.155
0.6
0.024
1.270
0.050
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTMS4916N/D
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