ON NTMS4920N Power mosfet Datasheet

NTMS4920N
Power MOSFET
30 V, 17 A, N−Channel, SO−8
Features
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
V(BR)DSS
Applications
•
•
•
•
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DC−DC Converters
Points of Loads
Power Load Switch
Motor Controls
RDS(ON) MAX
ID MAX
4.3 mW @ 10 V
30 V
17 A
5.7 mW @ 4.5 V
N−Channel
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Symbol
Value
Unit
VDSS
30
V
VGS
±20
V
ID
14.1
A
Continuous Drain
Current RqJA (Note 1)
Steady
State
TA = 25°C
Power Dissipation RqJA
(Note 1)
Steady
State
TA = 25°C
PD
1.46
W
Continuous Drain
Current RqJA (Note 2)
Steady
State
TA = 25°C
ID
10.6
A
TA = 70°C
PD
1
Steady
State
TA = 25°C
PD
2.12
W
Pulsed Drain Current
TA = 25°C, tp = 10 ms
IDM
136
A
TJ,
Tstg
−55 to
150
°C
IS
2.1
A
EAS
162
mJ
TA = 70°C
A
17
13.6
SO−8
CASE 751
STYLE 12
Source
Source
Source
Gate
8
Drain
Drain
Drain
Drain
Top View
Source Current (Body Diode)
4920N = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
TL
°C
260
Device
NTMS4920NR2G
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
1
W
Power Dissipation
RqJA, t v 10 s(Note 1)
TA = 25°C
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
MARKING DIAGRAM/
PIN ASSIGNMENT
4920N
AYWWG
G
ID
0.82
Steady
State
Single Pulse Drain−to−Source Avalanche Energy
(TJ = 25°C, VDD = 30 V, VGS = 10 V,
IL = 18 Apk, L = 1.0 mH, RG = 25 W)
S
8.5
Continuous Drain
Current RqJA, t v 10 s
(Note 1)
Operating Junction and Storage Temperature
G
11.3
TA = 70°C
TA = 25°C
Power Dissipation RqJA
(Note 2)
D
Symbol
Value
Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
85.5
°C/W
Junction−to−Ambient – t v 10 s (Note 1)
RqJA
59
Junction−to−Foot (Drain)
RqJF
25
Junction−to−Ambient – Steady State (Note 2)
RqJA
152
Package
Shipping†
SO−8
(Pb−Free)
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surfacemounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2016
February, 2016 − Rev. 2
1
Publication Order Number:
NTMS4920N/D
NTMS4920N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
12.2
VGS = 0 V, VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
Gate−to−Source Leakage Current
V
±100
mA
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
1.0
2.5
5.4
VGS = 10 V, ID = 7.5 A
gFS
V
mV/°C
3.6
4.3
mW
VGS = 4.5 V, ID = 6.5 A
4.6
5.7
VDS = 1.5 V, ID = 7.5 A
30.8
S
4068
pF
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
41
Total Gate Charge
QG(TOT)
26.3
Threshold Gate Charge
QG(TH)
6.4
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
QG(TOT)
VGS = 0 V, f = 1.0 MHz, VDS = 25 V
VGS = 4.5 V, VDS = 15 V, ID = 7.5 A
1170
nC
10.4
3.8
VGS = 10 V, VDS = 15 V, ID = 7.5 A
58.9
nC
td(on)
15.3
ns
tr
4.7
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(off)
VGS = 10 V, VDS = 15 V,
ID = 1.0 A, RG = 6.0 W
tf
68.6
42.2
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.7
TJ = 125°C
0.53
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V, IS = 2.0 A
1.0
ns
50.3
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 2.0 A
V
25.7
24.6
QRR
65
nC
Source Inductance
LS
0.66
nH
Drain Inductance
LD
0.2
Gate Inductance
LG
Gate Resistance
RG
PACKAGE PARASITIC VALUES
TA = 25°C
1.5
0.4
3. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
1.0
W
NTMS4920N
10V
4.5 V
3.6 V
3.2 V
2.8 V
3V
2.6 V
2.4 V
2V
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
TJ = 25°C
ID, DRAIN CURRENT (AMPS)
34
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
0.5
1.0
2.2 V
1.5
2.0
TJ = 125°C
TJ = 25°C
TJ = −55°C
1
1.5
2
2.5
3
3.5
4
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
TJ = 25°C
ID = 7.5 A
0.045
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
2
4
6
8
10
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TJ = 25°C
VGS = 4.5 V
0.005
0.004
VGS = 10 V
0.003
0.002
5
7.5
10
12.5
15
17.5 20
22.5
25
27.5 30
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10000
1.8
VGS = 0 V
VGS = 10 V
ID = 7.5 A
IDSS, LEAKAGE (nA)
1.6
4.5
0.006
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
VDS ≥ 10 V
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.050
0.000
65
60
55
50
45
40
35
30
25
20
15
10
5
0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (AMPS)
TYPICAL PERFORMANCE CURVES
1.4
1.2
1.0
TJ = 125°C
1000
TJ = 100°C
0.8
0.6
−50
100
−25
0
25
50
75
100
125
150
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
30
NTMS4920N
TYPICAL PERFORMANCE CURVES
TJ = 25°C
VGS = 0 V
4500
4000
C, CAPACITANCE (pF)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
5000
Ciss
3500
3000
2500
2000
Coss
1500
1000
500
0
Crss
15
20
25
5
10
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0
30
10
QT
8
VDS
6
4
QGS
2
VGS = 10 V
ID = 7.5 A
TJ = 25°C
0
0
10
Figure 7. Capacitance Variation
IS, SOURCE CURRENT (AMPS)
td(off)
tf
100
t, TIME (ns)
60
2
VDS = 15 V
ID = 1 A
VGS = 10 V
td(on)
tr
10
1
10
1
0.5
0.55
0.6
0.65
0.7
0.75
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100 ms
10
1 ms
10 ms
1
SINGLE PULSE
TC = 25°C
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
dc
1
10
100
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
10 ms
0.01
0.01
1.5
RG, GATE RESISTANCE (OHMS)
100
0.1
VGS = 0 V
TJ = 25°C
0
0.5
100
1000
ID, DRAIN CURRENT (AMPS)
30
50
20
40
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and
Drain−To−Source Voltage vs. Total Charge
1000
1
QGD
175
150
ID = 18 A
125
100
75
50
25
0
25
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
50
75
100
125
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
0.8
150
NTMS4920N
PACKAGE DIMENSIONS
SOIC−8
CASE 751−07
ISSUE AK
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
−X−
A
8
5
S
B
0.25 (0.010)
M
Y
M
1
4
K
−Y−
G
C
N
X 45 _
DIM
A
B
C
D
G
H
J
K
M
N
S
SEATING
PLANE
−Z−
0.10 (0.004)
H
M
D
0.25 (0.010)
M
Z Y
S
X
J
S
SOLDERING FOOTPRINT*
INCHES
MIN
MAX
0.189
0.197
0.150
0.157
0.053
0.069
0.013
0.020
0.050 BSC
0.004
0.010
0.007
0.010
0.016
0.050
0 _
8 _
0.010
0.020
0.228
0.244
STYLE 12:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
7. DRAIN
8. DRAIN
1.52
0.060
7.0
0.275
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.33
0.51
1.27 BSC
0.10
0.25
0.19
0.25
0.40
1.27
0_
8_
0.25
0.50
5.80
6.20
4.0
0.155
0.6
0.024
1.270
0.050
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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NTMS4920N/D
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