NTTFS4930N Power MOSFET 30 V, 23 A, Single N−Channel, m8FL Features • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V(BR)DSS RDS(on) MAX Applications • • • • DC−DC Converters Power Load Switch Notebook Battery Management Motor Control ID MAX 23 mW @ 10 V 30 V 23 A 30 mW @ 4.5 V N−Channel MOSFET D (5−8) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 7.2 A Continuous Drain Current RqJA (Note 1) TA = 25°C Power Dissipation RqJA (Note 1) TA = 25°C PD 2.06 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID 9.6 A Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain Current RqJA (Note 2) TA = 85°C 6.9 TA = 25°C PD 3.61 W TA = 25°C ID 4.5 A TA = 85°C 3.2 Power Dissipation RqJA (Note 2) TA = 25°C PD 0.79 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID 23 A Power Dissipation RqJC (Note 1) TC = 25°C PD 20.2 W TA = 25°C, tp = 10 ms IDM 92 A TJ, Tstg −55 to +150 °C Pulsed Drain Current TC = 85°C Operating Junction and Storage Temperature Source Current (Body Diode) MARKING DIAGRAM 1 S S S G 1 WDFN8 (m8FL) CASE 511AB 4930 A Y WW G 4930 AYWWG G D D D D = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) 16 IS 25 A Drain to Source dV/dt dV/dt 6.0 V/ns Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 12 Apk, L = 0.1 mH, RG = 25 W) EAS 7.2 mJ TL 260 °C Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) S (1,2,3) 5.2 TA = 85°C Steady State G (4) ORDERING INFORMATION Device Package Shipping† NTTFS4930NTAG WDFN8 1500/Tape & Reel (Pb−Free) NTTFS4930NTWG WDFN8 5000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. © Semiconductor Components Industries, LLC, 2011 April, 2011 − Rev. 0 1 Publication Order Number: NTTFS4930N/D NTTFS4930N THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction−to−Case (Drain) Parameter RqJC 6.2 °C/W Junction−to−Ambient – Steady State (Note 3) RqJA 60.7 Junction−to−Ambient – Steady State (Note 4) RqJA 159 Junction−to−Ambient – (t ≤ 10 s) (Note 3) RqJA 34.6 3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size (40 mm2, 1 oz. Cu). ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 16 VGS = 0 V, VDS = 24 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.2 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) gFS 1.6 3.7 VGS = 10 V VGS = 4.5 V Forward Transconductance 1.2 ID = 6 A 15 ID = 10 A 15 ID = 7 A 22.7 ID = 10 A 22.7 VDS = 1.5 V, ID = 15 A mV/°C 23 mW 30 19 S 476 pF CHARGES AND CAPACITANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 101 Total Gate Charge QG(TOT) 5.5 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge QG(TOT) VGS = 0 V, f = 1.0 MHz, VDS = 15 V VGS = 4.5 V, VDS = 15 V, ID = 20 A 197 nC 0.5 1.5 3.1 VGS = 10 V, VDS = 15 V, ID = 20 A 9.8 nC 8.4 ns SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 26.6 10.4 3.6 5. Pulse Test: pulse width = 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTTFS4930N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) ns 4.6 VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 17.6 13.3 2.5 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.97 TJ = 125°C 0.89 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 20 A 15.3 VGS = 0 V, dIS/dt = 100 A/ms, IS = 20 A 1.2 V ns 7.4 7.9 QRR 4.6 nC Source Inductance LS 0.38 nH Drain Inductance LD Gate Inductance LG Gate Resistance RG PACKAGE PARASITIC VALUES TA = 25°C 0.054 1.3 0.6 5. Pulse Test: pulse width = 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 W NTTFS4930N TYPICAL CHARACTERISTICS 8.5 V 40 40 6.5 V TJ = 25°C 4.4 V VDS = 10 V 4.5 V ID, DRAIN CURRENT (A) 10 V 4.2 V 4V 3.8 V 3.6 V 3.4 V 30 20 3.2 V 10 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 30 20 TJ = 125°C 10 TJ = 25°C 0 5 1 TJ = −55°C 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 3.0 V 2.8 V VGS = 2.6 V Figure 2. Transfer Characteristics 0.0340 ID = 10 A TJ = 25°C 0.0300 0.0260 0.0220 0.0180 0.0140 0.0100 3.0 4.0 5.0 6.0 7.0 VGS (V) 8.0 9.0 10.0 Figure 3. On−Resistance vs. VGS RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 50 3.8E−02 T = 25°C 3.4E−02 3.0E−02 VGS = 4.5 V 2.6E−02 2.2E−02 1.8E−02 VGS = 10 V 1.4E−02 1.0E−02 5 10 15 20 25 ID, DRAIN CURRENT (A) Figure 4. On−Resistance vs. Drain Current and Gate Voltage http://onsemi.com 4 30 5 NTTFS4930N TYPICAL CHARACTERISTICS 1.7 1.0E−04 ID = 10 A VGS = 10 V 1.5 VGS = 0 V 1.0E−05 1.4 TJ = 150°C IDSS, LEAKAGE (A) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.6 1.0E−06 1.3 TJ = 125°C 1.0E−07 1.2 1.1 1.0E−08 1 0.9 1.0E−09 0.8 TJ = 25°C 1.0E−10 0.7 0.6 −50 −25 0 25 50 75 100 125 1.0E−11 10 150 TJ, JUNCTION TEMPERATURE (°C) Figure 5. On−Resistance Variation with Temperature VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 600 Ciss 400 Coss 200 Crss 0 5 10 15 20 25 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 30 10 30 QT 9 8 7 6 5 Qgs 4 Qgd TJ = 25°C 3 VGS = 10 V VDD = 15 V ID = 20 A 2 1 0 0 Figure 7. Capacitance Variation 2 4 6 8 Qg, TOTAL GATE CHARGE (nC) 10 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 1000 td(off) 10 tf tr td(on) 1 1 10 IS, SOURCE CURRENT (A) 30 VGS = 10 V VDD = 15 V ID = 15 A 100 t, TIME (ns) 25 11 TJ = 25°C VGS = 0 V 0 20 Figure 6. Drain−to−Source Leakage Current vs. Voltage 800 0 15 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 25 VGS = 0 V TJ = 25°C 20 15 10 5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 5 1.1 NTTFS4930N TYPICAL CHARACTERISTICS 10 0 V < VGS < 20 V Single Pulse TC = 25°C 100 10 ms 100 ms 10 1 ms 10 ms 1 0.1 RDS(on) Limit Thermal Limit Package Limit 0.01 0.1 dc 1 10 EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) ID, DRAIN CURRENT (A) 1000 100 ID = 12 A 9 8 7 6 5 4 3 2 1 0 25 50 75 100 125 150 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature 100 D = 0.5 r(t) (°C/W) 10 0.2 0.1 0.05 0.02 1 0.01 0.1 0.01 0.000001 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) Figure 13. Thermal Response http://onsemi.com 6 1 10 100 1000 NTTFS4930N PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511AB−01 ISSUE B 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A D1 B 2X DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q 0.20 C 8 7 6 5 4X E1 E 1 2 3 4 q c TOP VIEW A1 0.10 C A 0.10 C e SIDE VIEW 0.10 8X b C A B 0.05 c L C 6X DETAIL A SEATING PLANE DETAIL A INCHES NOM 0.030 −−− 0.012 0.008 0.130 BSC 0.116 0.120 0.078 0.083 0.130 BSC 0.116 0.120 0.058 0.063 0.026 BSC 0.012 0.016 0.025 −−− 0.012 0.017 0.002 0.005 0.055 0.059 0_ −−− MIN 0.028 0.000 0.009 0.006 MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.020 −−− 0.022 0.008 0.063 12 _ SOLDERING FOOTPRINT* 8X 0.42 e/2 1 4 E2 0.65 PITCH PACKAGE OUTLINE K 4X 0.66 M 5 8 G MILLIMETERS MIN NOM MAX 0.70 0.75 0.80 0.00 −−− 0.05 0.23 0.30 0.40 0.15 0.20 0.25 3.30 BSC 2.95 3.05 3.15 1.98 2.11 2.24 3.30 BSC 2.95 3.05 3.15 1.47 1.60 1.73 0.65 BSC 0.30 0.41 0.51 0.64 −−− −−− 0.30 0.43 0.56 0.06 0.13 0.20 1.40 1.50 1.60 0_ −−− 12 _ D2 L1 3.60 BOTTOM VIEW 0.75 2.30 0.57 0.47 2.37 3.46 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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