ON NTTFS4943NTAG Power mosfet 30 v, 41 a, single n−channel, î¼8fl Datasheet

NTTFS4943N
Power MOSFET
30 V, 41 A, Single N−Channel, m8FL
Features
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(on) MAX
Applications
•
•
•
•
7.2 mW @ 10 V
30 V
DC−DC Converters
Power Load Switch
Notebook Battery Management
Motor Control
N−Channel MOSFET
Parameter
Symbol
D (5−8)
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
ID
12.7
A
Continuous Drain
Current RqJA (Note 1)
TA = 25°C
Power Dissipation RqJA
(Note 1)
TA = 25°C
PD
2.17
W
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°C
ID
18
A
Continuous Drain
Current RqJA (Note 2)
TA = 85°C
G (4)
S (1,2,3)
9.2
TA = 85°C
Steady
State
41 A
11 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Power Dissipation
RqJA ≤ 10 s (Note 1)
ID MAX
MARKING DIAGRAM
13
TA = 25°C
PD
4.35
W
TA = 25°C
ID
8.0
A
TA = 85°C
5.7
1
S
S
S
G
1
WDFN8
(m8FL)
CASE 511AB
4943
A
Y
WW
G
4943
AYWWG
G
D
D
D
D
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Power Dissipation
RqJA (Note 2)
TA = 25°C
PD
0.84
W
Continuous Drain
Current RqJC (Note 1)
TC = 25°C
ID
41
A
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
22.3
W
TA = 25°C, tp = 10 ms
IDM
125
A
TA = 25°C
IDmaxPkg
65
A
Device
TJ,
Tstg
−55 to
+150
°C
NTTFS4943NTAG
WDFN8 1500/Tape & Reel
(Pb−Free)
IS
25
A
NTTFS4943NTWG
Drain to Source DV/DT
dV/dt
6.0
V/ns
WDFN8 5000/Tape & Reel
(Pb−Free)
Single Pulse Drain−to−Source Avalanche Energy
(TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 25 Apk, L = 0.1 mH, RG = 25 W)
EAS
31
mJ
TL
260
°C
Pulsed Drain Current
TC = 85°C
Current Limited by Pkg.
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
29
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 0
1
Publication Order Number:
NTTFS4943N/D
NTTFS4943N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction−to−Case (Drain)
Parameter
RqJC
5.6
°C/W
Junction−to−Ambient – Steady State (Note 3)
RqJA
57.5
Junction−to−Ambient – Steady State (Note 4)
RqJA
149.2
Junction−to−Ambient – (t ≤ 10 s) (Note 3)
RqJA
28.7
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size (40 mm2, 1 oz. Cu).
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
15
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.2
V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
4.0
VGS = 10 V
VGS = 4.5 V
Forward Transconductance
gFS
1.2
ID = 20 A
5.1
ID = 10 A
5.1
ID = 20 A
7.6
ID = 10 A
7.5
VDS = 1.5 V, ID = 15 A
mV/°C
7.2
mW
11
29.3
S
1386
pF
CHARGES AND CAPACITANCES
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
23
Total Gate Charge
QG(TOT)
9.2
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
QG(TOT)
VGS = 0 V, f = 1.0 MHz, VDS = 15 V
VGS = 4.5 V, VDS = 15 V, ID = 20 A
440
nC
2.3
4.5
1.35
VGS = 10 V, VDS = 15 V, ID = 20 A
20.4
nC
10.6
ns
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
21
17.7
2.96
5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTTFS4943N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
ns
7.6
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
19.5
22
2.6
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.88
TJ = 125°C
0.78
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 20 A
1.2
ns
26.2
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 20 A
V
13.2
13
QRR
17
nC
Source Inductance
LS
0.38
nH
Drain Inductance
LD
Gate Inductance
LG
Gate Resistance
RG
PACKAGE PARASITIC VALUES
TA = 25°C
0.054
1.3
1.1
5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
2.0
W
NTTFS4943N
TYPICAL CHARACTERISTICS
70
4.5 V
4.0 V
10 V
3.4 V
40
3.2 V
30
3.0 V
20
2.8 V
10
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
45
40
35
30
25
1
2
4
3
15
10
5
0
1.0
5
2.5
2.0
3.0
3.5
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.050
0.040
0.030
0.020
0.010
3
4
5
6
7
8
9
VGS, GATE−TO−SOURCE VOLTAGE (V)
10
TJ = 25°C
0.009
0.008
VGS = 4.5 V
0.007
0.006
VGS = 10 V
0.005
0.004
10
20
30
40
50
60
70
80
90
100
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10,000
IDSS, LEAKAGE (nA)
1.9
1.8 ID = 20 A
1.7 VGS = 10 V
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
−50 −25
0
4.0
0.010
Figure 3. On−Resistance vs. VGS
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.5
TJ = −55°C
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID = 20 A
TJ = 25°C
2
TJ = 125°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.060
0.000
TJ = 25°C
20
2.6 V
2.4 V
0
VDS ≥ 10 V
50
ID, DRAIN CURRENT (A)
3.6 V
50
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
60
60
55
TJ = 25°C
VGS = 0 V
TJ = 150°C
1000
TJ = 125°C
100
TJ = 85°C
25
50
75
100
125
150
10
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
30
NTTFS4943N
TYPICAL CHARACTERISTICS
1600
C, CAPACITANCE (pF)
VGS = 0 V
TJ = 25°C
Ciss
1400
VGS, GATE−TO−SOURCE VOLTAGE (V)
1800
1200
1000
800
Coss
600
400
200
0
Crss
0
5
10
15
20
25
30
8
TJ = 25°C
7
6
5
Qgd
4
Qgs
3
VDD = 15 V
VGS = 10 V
ID = 20 A
2
1
0
0
2
4
8
6
10
12
14
16
18
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
20
30
IS, SOURCE CURRENT (A)
VGS = 0 V
td(off)
100
t, TIME (ns)
9
Qg, TOTAL GATE CHARGE (nC)
VDD = 15 V
ID = 15 A
VGS = 10 V
tf
tr
td(on)
10
1
10
15
10
5
TJ = 25°C
0.5
0.6
0.7
0.8
0.9
1.0
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
10 ms
100 ms
1 ms
10 ms
VGS = 20 V
Single Pulse
TC = 25°C
dc
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
10
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
0.01
0.01
TJ = 125°C
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
10
0.1
20
RG, GATE RESISTANCE (W)
100
1
25
0
0.4
100
1000
ID, DRAIN CURRENT (A)
QT
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
1
11
10
100
40
ID = 25 A
30
20
10
0
25
50
75
100
125
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
150
NTTFS4943N
TYPICAL CHARACTERISTICS
100
Duty Cycle = 50%
R(t) (°C/W)
10
20%
10%
5%
1
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.1
0.01
PULSE TIME (sec)
Figure 13. Thermal Response
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6
1
10
100
1000
NTTFS4943N
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB−01
ISSUE B
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
0.20 C
D
A
D1
B
2X
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
0.20 C
8 7 6 5
4X
E1 E
1 2 3 4
q
c
TOP VIEW
A1
0.10 C
A
0.10 C
e
SIDE VIEW
0.10
8X b
C A B
0.05
c
L
C
6X
DETAIL A
SEATING
PLANE
DETAIL A
INCHES
NOM
0.030
−−−
0.012
0.008
0.130 BSC
0.116
0.120
0.078
0.083
0.130 BSC
0.116
0.120
0.058
0.063
0.026 BSC
0.012
0.016
0.025
−−−
0.012
0.017
0.002
0.005
0.055
0.059
0_
−−−
MIN
0.028
0.000
0.009
0.006
MAX
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.020
−−−
0.022
0.008
0.063
12 _
SOLDERING FOOTPRINT*
8X
0.42
e/2
1
4
E2
0.65
PITCH
PACKAGE
OUTLINE
K
4X
0.66
M
5
8
G
MILLIMETERS
MIN
NOM
MAX
0.70
0.75
0.80
0.00
−−−
0.05
0.23
0.30
0.40
0.15
0.20
0.25
3.30 BSC
2.95
3.05
3.15
1.98
2.11
2.24
3.30 BSC
2.95
3.05
3.15
1.47
1.60
1.73
0.65 BSC
0.30
0.41
0.51
0.64
−−−
−−−
0.30
0.43
0.56
0.06
0.13
0.20
1.40
1.50
1.60
0_
−−−
12 _
D2
L1
3.60
BOTTOM VIEW
0.75
2.30
0.57
0.47
2.37
3.46
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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NTTFS4943N/D
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