ON NVD6828NL Power mosfet 90 v, 20 m , 41 a, single n.channel Datasheet

NVD6828NL
Power MOSFET
90 V, 20 mW, 41 A, Single N−Channel
Features
Low RDS(on) to Minimize Conduction Losses
High Current Capability
Avalanche Energy Specified
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJC (Notes 1 & 3)
Power Dissipation RqJC
(Note 1)
Continuous Drain
Current RqJA (Notes 1,
2 & 3)
Power Dissipation RqJA
(Notes 1 & 2)
Pulsed Drain Current
TC = 25°C
Steady
State
Symbol
Value
Unit
VDSS
90
V
VGS
"20
V
ID
41
A
TC = 100°C
TC = 25°C
PD
TA = 25°C
Steady
State
ID
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VGS = 10 V, IL(pk) = 24.5 A,
L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
D
N−Channel
W
83
S
A
8.7
4
PD
3.8
W
1 2
DPAK
CASE 369C
STYLE 2
1.9
IDM
206
A
TJ, Tstg
−55 to
175
°C
IS
40
A
EAS
90
mJ
TL
260
°C
4
Drain
2
1 Drain 3
Gate Source
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction−to−Case − Steady State (Drain)
RqJC
1.8
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
40
1. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
3
MARKING DIAGRAMS
& PIN ASSIGNMENT
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Parameter
41 A
25 mW @ 4.5 V
6.1
TA = 100°C
TA = 25°C, tp = 10 ms
ID
20 mW @ 10 V
90 V
42
TA = 100°C
TA = 25°C
RDS(on)
V(BR)DSS
G
29
TC = 100°C
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YWW
68
28LG
•
•
•
•
•
Y
WW
6828L
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NVD6828NLT4G
DPAK
(Pb−Free)
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
August, 2012 − Rev. 0
1
Publication Order Number:
NVD6828NL/D
NVD6828NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
90
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
87
IDSS
Gate−to−Source Leakage Current
V
VGS = 0 V,
VDS = 90 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
100
IGSS
VDS = 0 V, VGS = "20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
"100
nA
2.5
V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
1.5
−6.5
mV/°C
VGS = 10 V, ID = 20 A
16.5
20
VGS = 4.5 V, ID = 20 A
19.1
25
mW
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Threshold Gate Charge
QG(TOT)
175
VGS = 4.5 V, VDS = 72 V,
ID = 20 A
32
VGS = 10 V, VDS = 72 V,
ID = 20 A
61
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
pF
2900
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
126
nC
3.3
VGS = 10 V, VDS = 72 V,
ID = 20 A
9.0
16
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
ns
14
VGS = 10 V, VDD = 72 V,
ID = 20 A, RG = 2.5 W
tf
64
28
43
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.84
TJ = 125°C
0.72
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 20 A
35
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 20 A
QRR
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2
V
ns
25
10
49
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
1.2
nC
NVD6828NL
TYPICAL CHARACTERISTICS
VDS ≥ 10 V
3.8 V
TJ = 25°C
60
3.6 V
40
3.4 V
3.2 V
20
3.0 V
2.8 V
0
1
2
3
4
20
TJ = 125°C
TJ = −55°C
2.0
2.5
3.0
3.5
4.0
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
ID = 20 A
TJ = 25°C
0.024
0.022
0.020
0.018
0.016
2
4
6
8
10
0.030
TJ = 25°C
0.025
VGS = 4.5 V
0.020
VGS = 10 V
0.015
0.010
10
20
40
30
50
60
70
80
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100 k
ID = 20 A
VGS = 10 V
2.2
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (Normalized)
TJ = 25°C
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.026
2.8
40
VDS, DRAIN−TO−SOURCE (V)
0.028
0.014
60
0
5
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
80
4.5 V
VGS = 10 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
80
1.6
1.0
0.4
−50 −25
0
25
50
75
100
125
150
175
VGS = 0 V
TJ = 150°C
10 k
TJ = 125°C
1k
10
20
30
40
50
60
70
80
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
90
NVD6828NL
TYPICAL CHARACTERISTICS
VGS = 0 V
TJ = 25°C
Ciss
3000
VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
4000
2000
1000
Coss
0 Crss
0
10
30
50
40
60
70
80
90
8
6
4 Qgs
Qgd
VDS = 72 V
ID = 20 A
TJ = 25°C
2
0
0
10
20
30
40
50
60
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
70
80
IS, SOURCE CURRENT (A)
VDS = 72 V
ID = 20 A
VGS = 10 V
100
tr
tf
td(off)
10
QT
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
td(on)
1
10
VGS = 0 V
TJ = 25°C
60
40
20
0
0.50
100
0.60
0.70
0.80
0.90
1.00
1.10
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10 ms
ID, DRAIN CURRENT (A)
t, TIME (ns)
1000
20
10
100 ms
10
1 ms
10 ms
1
VGS = 10 V
Single Pulse
TC = 25°C
0.1
RDS(on) Limit
Thermal Limit
Package Limit
0.01
0.1
dc
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
100
NVD6828NL
TYPICAL CHARACTERISTICS
RqJC, R(t) (°C/W)
10
1
0.1
0.01
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (sec)
Figure 12. Thermal Response
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5
0.1
1
10
NVD6828NL
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE D
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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