ON NVR4003NT3G Small signal mosfet Datasheet

NTR4003N, NVR4003N
Small Signal MOSFET
30 V, 0.56 A, Single N−Channel, SOT−23
Features
• Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive Circuit
•
•
•
•
•
•
Design
Low Gate Charge for Fast Switching
ESD Protected Gate
SOT−23 Package Provides Excellent Thermal Performance
Minimum Breakdown Voltage Rating of 30 V
NVR Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
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V(BR)DSS
RDS(on) TYP
ID MAX
1.0 W @ 4.0 V
30 V
0.56 A
1.5 W @ 2.5 V
N−Channel
3
Applications
• Notebooks:
♦
Level Shifters
Logic Switches
♦ Low Side Load Switches
Portable Applications
♦
•
1
2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
TA = 25°C
t < 10 s
Value
Unit
VDSS
30
V
VGS
±20
V
ID
0.5
A
TA = 85°C
Steady State
Continuous Drain
Current (Note 1)
Symbol
TA = 25°C
0.37
Power Dissipation
(Note 1)
Pulsed Drain Current
0.69
W
ID
0.56
A
0.40
t<5s
PD
0.83
W
tp = 10 ms
IDM
1.7
A
TJ,
Tstg
−55 to
150
°C
Operating Junction and Storage Temperature
Source Current (Body Diode)
IS
1.0
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
THERMAL RESISTANCE RATINGS
Symbol
Max
Unit
Junction−to−Ambient − Steady State (Note 1)
RqJA
180
°C/W
Junction−to−Ambient − t < 10 s (Note 1)
RqJA
150
Junction−to−Ambient − Steady State (Note 2)
RqJA
300
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2005
October, 2015 − Rev. 5
3
Drain
2
SOT−23
CASE 318
STYLE 21
TR8
M
G
TR8 M G
G
1
Gate
2
Source
= Specific Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Parameter
3
1
PD
TA = 85°C
MARKING DIAGRAM/
PIN ASSIGNMENT
1
Device
Package
Shipping†
NTR4003NT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
NTR4003NT3G
SOT−23
(Pb−Free)
10,000 / Tape &
Reel
NVR4003NT3G
SOT−23
(Pb−Free)
10,000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTR4003N/D
NTR4003N, NVR4003N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 100 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Units
OFF CHARACTERISTICS
V
40
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 30 V
TJ = 25°C
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±10 V
VGS(TH)
VGS = VDS, ID = 250 mA
mV/°C
1.0
mA
±1.0
mA
1.4
V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold
Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
0.8
3.4
mV/°C
VGS = 4.0 V, ID = 10 mA
1.0
1.5
VGS = 2.5 V, ID = 10 mA
1.5
2.0
VDS = 3.0 V, ID = 10 mA
0.33
W
S
CHARGES AND CAPACITANCES
Ciss
Input Capacitance
VGS = 0 V, f = 1.0 MHz,
VDS = 5.0 V
21
42
Output Capacitance
Coss
19.7
40
Reverse Transfer Capacitance
Crss
8.1
16
Total Gate Charge
QG(TOT)
1.15
Threshold Gate Charge
QG(TH)
VGS = 5.0 V, VDS = 24 V,
ID = 0.1 A
pF
0.15
Gate−to−Source Gate Charge
QGS
Gate−to−Drain Charge
QGD
0.23
td(on)
16.7
nC
0.32
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(off)
VGS = 4.5 V, VDD = 5.0 V,
ID = 0.1 A, RG = 50 W
tf
47.9
ns
65.1
64.2
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 10 mA
Reverse Recovery Time
tRR
VGS = 0 V, dIS/dt = 8A/ms,
IS = 10 mA
TJ = 25°C
0.65
TJ = 125°C
0.45
14
0.7
V
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTR4003N, NVR4003N
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
1.6
1.6
VDS ≥ 10 V
VGS = 10 V to 5 V
0.8
4V
0.4
3.5 V
TJ = 25°C
0.8
TJ = 125°C
0.4
0
1
0
2
0
1
2
3
4
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
10
ID = 0.2 A
8
6
4
2
0
2.4
2.8
3.2
3.6
VGS, GATE−TO−SOURCE VOLTAGE (V)
4
VGS = 10 V
TJ = 125°C
0.8
0.6
TJ = 25°C
0.4
TJ = −55°C
0.2
0
0
0.1
0.2
0.3
0.4
0.5
0.6
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Temperature
1000
1.80
VGS = 0 V
ID = 0.3 A
VGS = 4.5 V
IDSS, LEAKAGE (nA)
1.60
5
1
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
(NORMALIZED)
TJ = −55°C
1.2
2.5 V
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
4.5 V
1.2
1.40
1.20
1.00
TJ = 150°C
100
TJ = 125°C
0.80
0.60
−25
10
−50
0
25
50
75
100
125
150
0
5
10
15
20
25
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
30
NTR4003N, NVR4003N
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
VGS, GATE−TO−SOURCE VOLTAGE (V)
50
40
30
Ciss
20
Coss
10
0
Crss
0
4
8
12
16
5
TJ = 25°C
ID = 0.1 A
4
3
2
1
0
0.4
0
20
DRAIN−TO−SOURCE VOLTAGE (V)
Figure 8. Gate−to−Source & Drain−to−Source
Voltage vs. Total Charge
1
VGS = 0 V
0.1
0.01
0.8
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
IS, SOURCE CURRENT (A)
C, CAPACITANCE (pF)
TJ = 25°C
VGS = 0 V
TJ = 150°C
TJ = 25°C
0.001
0.4
0.6
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
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4
0.8
1.2
NTR4003N, NVR4003N
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
0.25
3
E
1
2
T
HE
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
c
SEE VIEW C
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
3X
0.90
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTR4003N/D